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Atsushi Nakagawa
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Kawanishi, JP
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last 30 patents
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Patent Grant
Method of manufacturing an heterojunction bipolar transistor
Patent number
5,429,957
Issue date
Jul 4, 1995
Matsushita Electric Industrial Co., Ltd.
Toshinobu Matsuno
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Heterojunction bipolar transistor with base layer having graded ban...
Patent number
5,371,389
Issue date
Dec 6, 1994
Matsushita Electric Industrial Co., Ltd.
Toshinobu Matsuno
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Heterojunction bipolar transistor including collector region of InP...
Patent number
5,345,097
Issue date
Sep 6, 1994
Matsushita Electric Industrial, Co., Ltd.
Atsushi Nakagawa
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Heterojunction bipolar transistor and its integration method
Patent number
5,329,145
Issue date
Jul 12, 1994
Matsushita Electric Industrial Co., Ltd.
Atsushi Nakagawa
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of producing a bipolar transistor
Patent number
5,166,081
Issue date
Nov 24, 1992
Matsushita Electric Industrial Co., Ltd.
Masanori Inada
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Bipolar transistor and method of producing the same
Patent number
4,965,650
Issue date
Oct 23, 1990
Matsushita Electric Industrial Co., Ltd.
Masanori Inada
H01 - BASIC ELECTRIC ELEMENTS