Atsushi Ogura

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method for manufacturing same
- Patent number 7,701,018
- Issue date Apr 20, 2010
- NEC Corporation
- Shigeharu Yamagami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a conductive portion below an interlaye...
- Patent number 7,612,416
- Issue date Nov 3, 2009
- NEC Corporation
- Kiyoshi Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate manufacturing method and semiconductor devi...
- Patent number 7,605,443
- Issue date Oct 20, 2009
- NEC Corporation
- Atsushi Ogura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Film forming method
- Patent number 7,312,140
- Issue date Dec 25, 2007
- Tri Chemical Laboratories Inc.
- Hideaki Machida
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
SOI MOSFET
- Patent number 6,933,569
- Issue date Aug 23, 2005
- NEC Corporation
- Risho Koh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI substrate and method for manufacturing the same
- Patent number 6,548,379
- Issue date Apr 15, 2003
- NEC Corporation
- Atsushi Ogura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming an SOI substrate by use of a plasma ion irradiation
- Patent number 6,506,662
- Issue date Jan 14, 2003
- Atsushi Ogura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-on-insulator (SOI) substrate
- Patent number 6,489,654
- Issue date Dec 3, 2002
- NEC Corporation
- Atsushi Ogura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Production process of SOI substrate
- Patent number 6,316,337
- Issue date Nov 13, 2001
- NEC Corporation
- Atsushi Ogura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-on-insulator (SOI) substrate and method of fabricating the...
- Patent number 6,211,041
- Issue date Apr 3, 2001
- NEC Corporation
- Atsushi Ogura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating SOI substrate
- Patent number 6,074,928
- Issue date Jun 13, 2000
- NEC Corporation
- Atsushi Ogura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating SOI substrate
- Patent number 5,888,297
- Issue date Mar 30, 1999
- NEC Corporation
- Atsushi Ogura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing a semiconductor on insulating substrate, and a...
- Patent number 5,668,046
- Issue date Sep 16, 1997
- NEC Corporation
- Risho Koh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for thinning a semiconductor film on an insulating film
- Patent number 5,650,042
- Issue date Jul 22, 1997
- NEC Corporation
- Atsushi Ogura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for thinning a semiconductor film on an insulating film
- Patent number 5,556,503
- Issue date Sep 17, 1996
- NEC Corporation
- Atsushi Ogura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a semiconductor on insulating substrate, and a...
- Patent number 5,427,976
- Issue date Jun 27, 1995
- NEC Corporation
- Risho Koh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 4,643,950
- Issue date Feb 17, 1987
- Agency of Industrial Science and Technology
- Atsushi Ogura
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor Device and Method for Manufacturing Same
- Publication number 20080251849
- Publication date Oct 16, 2008
- Shigeharu Yamagami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having fin-type effect transistor
- Publication number 20070187682
- Publication date Aug 16, 2007
- NEC Corporation
- Kiyoshi Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for producing the same
- Publication number 20070132009
- Publication date Jun 14, 2007
- Kiyoshi Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing process therefor
- Publication number 20070075372
- Publication date Apr 5, 2007
- NEC Corporation
- Koichi Terashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Film forming method
- Publication number 20060068101
- Publication date Mar 30, 2006
- Tri Chemical Laboratories Inc.
- Hideaki Machida
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Film forming method
- Publication number 20060067230
- Publication date Mar 30, 2006
- Tri Chemical Laboratories Inc.
- Hideaki Machida
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Film forming method
- Publication number 20060068103
- Publication date Mar 30, 2006
- Tri Chemical Laboratories Inc.
- Hideaki Machida
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Film forming method
- Publication number 20060068100
- Publication date Mar 30, 2006
- Tri Chemical Laboratories Inc.
- Hideaki Machida
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Film forming method
- Publication number 20060030161
- Publication date Feb 9, 2006
- Tri Chemical Laboratories Inc.
- Hideaki Machida
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Semiconductor substrate manufacturing method and semiconductor devi...
- Publication number 20050176222
- Publication date Aug 11, 2005
- Atsushi Ogura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for manufacturing the same
- Publication number 20040129975
- Publication date Jul 8, 2004
- NEC Corporation
- Risho Koh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-ON-INSULATOR(SOI)SUBSTRATE
- Publication number 20020153563
- Publication date Oct 24, 2002
- Atsushi Ogura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING AN SOI SUBSTRATE BY USE OF PLASMA ION IRRADIATION
- Publication number 20020155679
- Publication date Oct 24, 2002
- Atsushi Ogura
- H01 - BASIC ELECTRIC ELEMENTS

Atsushi Ogura

Person

Patents Grantslast 30 patents

Semiconductor device and method for manufacturing same

Semiconductor device having a conductive portion below an interlaye...

Semiconductor substrate manufacturing method and semiconductor devi...

Film forming method

SOI MOSFET

SOI substrate and method for manufacturing the same

Method for forming an SOI substrate by use of a plasma ion irradiation

Silicon-on-insulator (SOI) substrate

Production process of SOI substrate

Silicon-on-insulator (SOI) substrate and method of fabricating the...

Method of fabricating SOI substrate

Method of fabricating SOI substrate

Method of producing a semiconductor on insulating substrate, and a...

Method for thinning a semiconductor film on an insulating film

Apparatus for thinning a semiconductor film on an insulating film

Method of producing a semiconductor on insulating substrate, and a...

Semiconductor device

Patents Applicationslast 30 patents

Semiconductor Device and Method for Manufacturing Same

Semiconductor device having fin-type effect transistor

Semiconductor device and method for producing the same

Semiconductor device and manufacturing process therefor

Film forming method

Film forming method

Film forming method

Film forming method

Film forming method

Semiconductor substrate manufacturing method and semiconductor devi...

Semiconductor device and method for manufacturing the same

SILICON-ON-INSULATOR(SOI)SUBSTRATE

METHOD FOR FORMING AN SOI SUBSTRATE BY USE OF PLASMA ION IRRADIATION