Patent Application
20060068103
The present invention relates to a forming method and a forming material of tungsten films (or tungsten silicide films, or tungsten nitride films). Further, the present invention relates to a film formed by employing said material. Also, the present invention relates to elements such as semiconductor elements comprising said films.
At the present moment, the progress in the semiconductor fields is remarkable, and LSIs are being converted into ULSIs. And, so as to improve a signal processing speed, forming a fine-grained structure is being developed. Also, copper having a low resistance is selected as wiring conductor materials, and the spacing between wiring conductors is filled with materials having a very low dielectric constant. Moreover, A trend of extremely thinning a film goes up steadily. A conversion of a gate oxide film, which is currently made of SiO2, into a metal oxide film such as HfO2 has been also studied.
By the way, the resistance of the gate electrode also has been perceived as problems. Accordingly, it has been long wanted to develop new materials.
In order to overcome such problems, it has been studied to configure the gate electrode of tungsten (W), being conductive metal.
By the way, the W thin film can be easily formed with a sputtering technique.
However, employing the sputtering to form a film of the gate electrode causes the semiconductor elements to be damaged physically.
For that reason, formation of the tungsten thin films (wiring conductor films) with a chemical vapor deposition (CVD) process was intended in the semiconductor fields. That is, formation of the tungsten thin film with the CVD process employing WF6 was intended.
This WF6, of which a vapor pressure is high, is comparatively easy to supply to a reaction chamber.
However, there is anxiety that fluorine to be contained in raw materials might exert a bad influence.
Thus, a first problem to be solved by the present invention is to provide a technology of forming tungsten films (or tungsten silicide films, or tungsten nitride films) by employing the CVD process that hardly does a thermal damage to the semiconductor elements.
A second problem to be solved by the present invention is to provide a technology of employing materials having no halogen, which has a high possibility of exerting a bad influence upon the semiconductor elements, thereby to form tungsten films (or tungsten silicide films, or tungsten nitride films)
A third problem to be solved by the present invention is to provide a technology capable of forming tungsten films (or tungsten silicide films, or tungsten nitride films) of which purity is high.
A fourth problem to be solved by the present invention is to provide a technology capable of easily forming tungsten films (or tungsten silicide films or tungsten nitride films) at a low temperature.
In the course of going aggressively with a research for solving the above-mentioned problems, the present inventor et al. noticed that it was very important to specify what should be employed as configuration materials of the tungsten films (or the tungsten silicide films, or the tungsten nitride films).
And, as a result of further having continued the research, it has been found out that a chemical compound represented with the following general formula [I] is very preferably employed as a W source.
General formula [I]:
where R1, R2, R3, R4, or R5 is H or a hydrocarbon group respectively, each which has the same type or a different type.
Moreover, in addition hereto, it has been also found out that employing chemical compounds represented with SixH(2x+2), where X is an integer of 1 or more, allows more preferable silicide films to be produced.
Also, in addition hereto, it has been also found out that employing ammonia allows more preferable nitride films to be produced.
The present invention has been achieved based upon such knowledge.
That is, in order to solve the above-mentioned problems, a method is applied of forming a film containing tungsten, comprising:
General formula [I]:
where R1, R2, R3, R4, or R5 is H or a hydrocarbon group respectively, each which has the same type or a different type.
Said W chemical compound is, particularly, one or more chemical compounds selected from the group consisting of a biscyclopentadienyltungsten dihydride, a bismethylcyclopentadienyltungsten dihydride, a bisethylcyclopentadienyltungsten dihydride, and a bisisopropylcyclopentadienyltungsten dihydride.
The method of the present invention is, particularly, a method of forming a film with a CVD process. And, said decomposition is a decomposition employing at least any one of the techniques selected from the group consisting of heat, light, and a hot filament.
The present invention is particularly employed in a case of forming a gate electrode film.
In particular, the present invention further comprises a reducing agent supply step of supplying a reducing agent (particularly, hydrogen).
In a case where said film is a tungsten silicide film, the present invention further comprises:
Said Si chemical compound is, particularly, one or more chemical compounds selected from the group consisting of SiH4, Si2H6, and Si3H8.
Said W chemical compound and said Si chemical compound are supplied simultaneously or separately. And, they are decomposed simultaneously or separately.
In a case where said film is a tungsten nitride film, the present invention further comprises:
Said N chemical compound is, particularly, ammonia.
Said W chemical compound and said N chemical compound are supplied simultaneously or separately. And, they are decomposed simultaneously or separately.
The present invention provides a film containing tungsten, said film being obtained through:
Said W chemical compound is, particularly, one or more chemical compounds selected from the group consisting of a biscyclopentadienyltungsten dihydride, a bismethylcyclopentadienyltungsten dihydride, a bisethylcyclopentadienyltungsten dihydride, and a bisisopropylcyclopentadienyltungsten dihydride.
The film of the present invention is, particularly, a film formed with a CVD process. Particularly, it is a gate electrode film.
In the present invention, in a case where said film is a tungsten silicide film, said film is obtained by further going through: an Si source supply step of supplying SixH(2x+2), where X is an integer of 1 or more, as an Si source of said tungsten silicide film; and a decomposition step of decomposing the Si chemical compounds supplied in said Si source supply step.
Said Si chemical compound is, particularly, one or more chemical compounds selected from the group consisting of SiH4, Si2H6, and si3H8.
In the present invention, in a case where said film is a tungsten nitride film, said film is obtained by further going through: an N source supply step of supplying one or more N chemical compounds selected from the group of ammonia and ammonia producing chemical compounds as an N source of said tungsten nitride film; and a decomposition step of decomposing the N chemical compounds supplied in said N source supply step.
Said N chemical compound is, particularly, ammonia.
Also, the present invention provides a film forming material for forming a film containing tungsten, wherein a W source of said film is one or more W chemical compounds selected from the group of the following general formula [I].
In a case where said film is a tungsten silicide film, the present invention provide a film forming material, wherein a W source of said film is one or more W chemical compounds selected from the group of the following general formula [I], and wherein an Si source of said film is one or more Si chemical compounds selected from the group consisting of SixH(2x+2), where X is an integer of 1 or more.
In a case where said film is a tungsten nitride film, the present invention provides a film forming material, wherein a W source of said film is one or more W chemical compounds selected from the group of the following general formula [I], and where an N source of said film is one or more N chemical compounds selected from the group of ammonia and ammonia producing chemical compounds.
General formula [I]:
where R1, R2, R3, R4, or R5 is H or a hydrocarbon group respectively, each which has the same type or a different type.
Said W chemical compound is, particularly, one or more chemical compounds selected from the group consisting of a biscyclopentadienyltungsten dihydride, a bismethylcyclopentadienyltungsten dihydride, a bisethylcyclopentadienyltungsten dihydride, and a bisisopropylcyclopentadienyltungsten dihydride.
Said Si chemical compound is, particularly, one or more chemical compounds selected from the group consisting of SiH4, Si2H6, and si3H8.
Said N chemical compound is, particularly, ammonia.
The film forming material of the present invention is a material for forming a film with a CVD process. In particularly, it is a material for forming a gate electrode film. In particular, it is a material for forming the gate electrode film in the semiconductor elements such as MOSFETs. Above all, it is a tungsten silicide film. Or, it is a tungsten nitride film.
Also, in order to solve the above-mentioned problems, the present invention provides a semiconductor element comprising tungsten films, tungsten silicide films, or tungsten nitride films, wherein one or more W chemical compounds selected from the group of the following general formula [I] are supplied as a W source, and W of said film is configured by decomposing said supplied W chemical compounds.
General formula [I]:
where R1, R2, R3, R4, or R5 is H or a hydrocarbon group respectively, each which has the same type or a different type.
In accordance with the present invention, the tungsten films, the tungsten silicide films, or the tungsten nitride films are obtained with the CVD process of hardly doing a thermal damage.
In addition hereto, this film has no halogen in raw materials, whereby it hardly exerts a bad influence upon the semiconductor elements. And yet, the purity of the film is high. Moreover, it is excellent in film conductivity. That is, it is preferred as a gate electrode.
And, the raw material to be employed for the present invention, particularly, the W raw material has a relative high vapor pressure. Accordingly, this material is easy to supply in performing the CVD process, and the film forming is easy.
This and other objects, features and advantages of the present invention will become apparent upon a reading of the following detailed description and a drawing, in which:
The present invention relates to a method of forming a film containing tungsten. Said method comprises: a W source supply step of supplying one or more W chemical compounds selected from the group of the above-mentioned general formula [I] (Additionally, in the general formula [I], in a case where R1, R2, R3, R4 or R5 is a hydrocarbon group, a carbon number thereof is preferably 1 to 25. Moreover, a carbon number is 1 to 10. The hydrocarbon group is, particularly, an alkyl group.) as a W source of said film; and a decomposition step of decomposing the W chemical compounds supplied in said W source supply step. Said W chemical compound is, particularly, one or more chemical compounds selected from the group consisting of a biscyclopentadienyltungsten dihydride, a bismethylcyclopentadienyltungsten dihydride, a bisethylcyclopentadienyltungsten dihydride, and a bisisopropylcyclopentadienyltungsten dihydride. The present invention, particularly, relates to a method of forming a film with the CVD process. The decomposition in the CVD process is a decomposition employing at least any one of the techniques selected from the group consisting of heat, light, and a hot filament. In particularly, the present invention further comprises a reducing agent supply step of supplying a reducing agent (particularly, hydrogen).
In a case where said film is a tungsten silicide film, the present invention further comprises: an Si source supply step of supplying SixH(2x+2), where X is an integer of 1 or more, preferably, an integer of 10 or less, as an Si source of said tungsten silicide film; and a decomposition step of decomposing the Si chemical compounds supplied in said Si source supply step. Said Si chemical compound is, particularly, one or more chemical compounds selected from the group consisting of SiH4, Si2H6, and Si3H8. Said W chemical compound and said Si chemical compound are supplied simultaneously or separately. And, they are decomposed simultaneously or separately.
In a case where said film is a tungsten nitride film, the present invention further comprises an N source supply step of supplying one or more N chemical compounds selected from the group of ammonia and ammonia producing chemical compounds (chemical compounds from which ammonia is produced by decomposition) as an N source of said tungsten nitride film; and a decomposition step of decomposing the N chemical compounds supplied in said N source supply step. Said N chemical compound is, particularly, ammonia. Said W chemical compound and said N chemical compound are supplied simultaneously or separately. And, they are decomposed simultaneously or separately.
The film of the present invention is a film obtained with the above-mentioned methods.
The present invention provides a material for forming a film containing tungsten. Said material is one or more W chemical compounds selected from the group of the above-mentioned general formula [I]. In particular, it is a W chemical compound explained in said method. Above all, the chemical compound, which most preferably configures the gate electrode, is a bisisopropylcyclopentadienyltungsten dihydride.
In the present invention, in a case where said film is a tungsten silicide film, an Si source of said tungsten silicide film is SixH(2x+2), where X is an integer of 1 or more, and in addition, X is preferably an integer of 10 or less. In particular, it is an Si chemical compound explained in said method.
In the present invention, in a case where said film is a tungsten nitride film, an N source of said tungsten nitride film is one or more N chemical compounds selected from the group of ammonia and ammonia producing chemical compounds. In particular, it is an N chemical compound explained in said method.
The film forming material of the present invention is a material for forming a film with the CVD process. In particular, it is a material for forming a gate electrode film. In particular, it is a material for forming a gate electrode film in the semiconductor elements such as MOSFETs. Above all, it is a material for forming a tungsten silicide film.
The semiconductor element of the present invention is a semiconductor element comprising the tungsten film, the tungsten silicide film, or the tungsten nitride film. One or more W chemical compounds selected from the group of said general formula [I] are supplied as a W source, and W of said film is configured by decomposing said supplied W chemical compounds. In a case of the tungsten silicide film, or the tungsten nitride film, the chemical compounds mentioned before are supplied, and these films are configured by decomposing the above chemical compounds.
Specific embodiments will be described below.
A bisisopropylcyclopentadienyltungsten dihydride (i-PrCp2WH2) was placed in the container 1, and was maintained at 120° C. The decomposition reactor 3 was evacuated in vacuum. The substrate 4 was heated at 150-450° C.,
And, the needle valve 12 was released. This caused the vaporized i-PrCp2WH2 to be introduced into the decomposition reactor 3.
As a result, the film was formed on the substrate 4. This film was investigated with an XPS (X-ray photoelectron spectroscopy). As a result, existence of W was confirmed. Also, it was investigated with an X-ray. As a result, it was confirmed that this film was a W film. Also, observing SEM (Scanning Electron Microscope) photographs and TEM (Transmission Electron Microscope) photographs of the section demonstrated that an interface was extremely flat. That is, it was founded out that no reaction occurred in the interface (Si) and the excellent interface was obtained. This film was preferred for the gate electrode of the next generation semiconductor elements.
The embodiment 2 was carried out similarly to the embodiment 1 with the exception that a biscyclopentadienyltungsten dihydride was employed instead of i-PrCp2WH2.
As a result, the similar W film was formed. This film was preferred for the gate electrode of the next generation semiconductor elements.
The embodiment 3 was carried out similarly to the embodiment 1 with the exception that a bismethylcyclopentadienyltungsten dihydride was employed instead of i-PrCp2WH2.
As a result, the similar W film was formed. This film was preferred for the gate electrode of the next generation semiconductor elements.
The embodiment 4 was carried out similarly to the embodiment 1 with the exception that a bisethylcyclopentadienyltungsten dihydride was employed instead of i-PrCP2WH2.
As a result, the similar W film was formed. This film was preferred for the gate electrode of the next generation semiconductor elements.
The embodiment 5 was carried out similarly to the embodiment 1 with the exception that i-PrCP2WH2 and SiH4 were simultaneously introduced into the decomposition reactor 3 instead of introduction of only i-PrCp2WH2.
As a result, the film was formed on the substrate 4.
This film was investigated with the XPS. As a result, W and Si were confirmed. Also, it was investigated with an X-ray. As a result, it was confirmed that this film was a tungsten silicide film. Also, observing the SEM photographs and the TEM photographs of the section demonstrated that an interface was extremely flat. That is, it was founded out that no reaction occurred in the interface (Si) and the excellent interface was obtained.
This film was preferred for the gate electrode of the next generation semiconductor elements.
The embodiment 6 was carried out similarly to the embodiment 5 with the exception that a biscyclopentadienyltungsten dihydride was employed instead of i-PrCp2WH2.
As a result, the tungsten silicide film similar to that of the embodiment 5 was formed. This film was preferred for the gate electrode of the next generation semiconductor elements.
The embodiment 7 was carried out similarly to the embodiment 5 with the exception that a bismethylcyclopentadienyltungsten dihydride was employed instead of i-PrCp2WH2.
As a result, the tungsten silicide film similar to that of the embodiment 5 was formed. This film was preferred for the gate electrode of the next generation semiconductor elements.
The embodiment 8 was carried out similarly to the embodiment 5 with the exception that a bisethylcyclopentadienyltungsten dihydride was employed instead of i-PrCp2WH2.
As a result, the tungsten silicide film similar to that of the embodiment 5 was formed. This film was preferred for the gate electrode of the next generation semiconductor elements.
The embodiment 9 was carried out similarly to the embodiment 5 with the exception that Si2H6 was employed instead of SiH4.
As a result, the tungsten silicide film similar to that of the embodiment 5 was formed. This film was preferred for the gate electrode of the next generation semiconductor elements.
The embodiment 10 was carried out similarly to the embodiment 5 with the exception that Si3H8 was employed instead of SiH4.
As a result, the tungsten silicide film similar to that of the embodiment 5 was formed. This film was preferred for the gate electrode of the next generation semiconductor elements.
The embodiment 11 was carried out similarly to the embodiment 1 with the exception that i-PrCp2WH2 and ammonia (NH3) were simultaneously introduced into the decomposition reactor 3 instead of introduction of only i-PrCp2WH2.
As a result, the film was formed on the substrate 4.
This film was investigated with the XPS. As a result, W and N were confirmed. Also, it was investigated with the X-ray. As a result, it was confirmed that this film was a tungsten nitride film. Also, observing the SEM photographs and the TEM photcgraphs of the section demonstrated that an interface was extremely flat. That is, it was founded out that no reaction occurred in the interface (Si) and the excellent interface was obtained.
This film was preferred for the gate electrode of the next generation semiconductor elements.
The embodiment 12 was carried out similarly to the embodiment 11 with the exception that a biscyclopentadienyltungsten dihydride was employed instead of i-PrCp2WH2.
As a result, the tungsten nitride film similar to that of the embodiment 11 was formed. This film was preferred for the gate electrode of the next generation semiconductor elements.
The embodiment 13 was carried out similarly to the embodiment 11 with the exception that a bismethylcyclopentadienyltungsten dihydride was employed instead of i-PrCp2WH2.
As a result, the tungsten nitride film similar to that of the embodiment 11 was formed. This film was preferred for the gate electrode of the next generation semiconductor elements.
The embodiment 14 was carried out similarly to the embodiment 11 with the exception that a bisethylcyclopentadienyltungsten dihydride was employed instead of i-PrCp2WH2.
As a result, the tungsten nitride film similar to that of the embodiment 11 was formed. This film was preferred for the gate electrode of the next generation semiconductor elements.
In the embodiment 1, the decomposition of the chemical compounds was made with the heating means.
The embodiment 15 was carried out similarly to the embodiment 1 with the exception that the photo-irradiation means was employed instead of this heating means.
As a result, the similar W film was formed. This film was preferred for the gate electrode of the next generation semiconductor elements.
In the embodiment 1, the decomposition of the chemical compounds was made with the heating means.
The embodiment 16 was carried out similarly to the embodiment 1 with the exception that the laser-irradiation means was employed instead of this heating means.
As a result, the similar W film was formed. This film was preferred for the gate electrode of the next generation semiconductor elements.
In the embodiment 1, the decomposition of the chemical compounds was made with the heating means.
The embodiment 17 was carried out similarly to the embodiment 1 with the exception that the decomposition was made with i—PrCp2WH2 brought into contact with the hot filament 10 heated at 800° C. or more on the way to the Si substrate 4 instead of this heating means for decomposition.
As a result, the similar W film was formed. This film was preferred for the gate electrode of the next generation semiconductor elements.
Particularly, the present invention can be usefully applied in the semiconductor fields.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2004-285718 | Sep 2004 | JP | national |
| 2005-154085 | May 2005 | JP | national |
