Baofu Zhu

Person

Clifton Park, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Transistors with separately-formed source and drain
- Patent number 11,563,085
- Issue date Jan 24, 2023
- GLOBALFOUNDRIES U.S. INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric source drain structures
- Patent number 11,362,178
- Issue date Jun 14, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial semiconductor material regions for transistor devices and...
- Patent number 11,362,177
- Issue date Jun 14, 2022
- GLOBALFOUNDRIES U.S. INC.
- Arkadiusz Malinowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual trench isolation structures
- Patent number 11,239,315
- Issue date Feb 1, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Shiv Kumar Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with an asymmetrical source and drain
- Patent number 11,239,366
- Issue date Feb 1, 2022
- GLOBALFOUNDRIES U.S. INC.
- Wenjun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial semiconductor material regions for transistor devices and...
- Patent number 11,205,699
- Issue date Dec 21, 2021
- GLOBALFOUNDRIES U.S. INC.
- Arkadiusz Malinowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with a hybrid source or drain
- Patent number 11,177,385
- Issue date Nov 16, 2021
- GLOBALFOUNDRIES U.S. INC.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain regions for transistor devices and methods of forming...
- Patent number 11,094,822
- Issue date Aug 17, 2021
- GLOBALFOUNDRIES U.S. INC.
- Arkadiusz Malinowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with separately-formed source and drain
- Patent number 11,075,268
- Issue date Jul 27, 2021
- GLOBALFOUNDRIES U.S. INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
N-well resistor
- Patent number 10,985,244
- Issue date Apr 20, 2021
- GLOBALFOUNDRIES U.S. INC.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
STI structure with liner along lower portion of longitudinal sides...
- Patent number 10,910,276
- Issue date Feb 2, 2021
- GLOBALFOUNDRIES Inc.
- Yongjun Shi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device with diffusion blocking layer in source/drain region
- Patent number 10,164,099
- Issue date Dec 25, 2018
- GLOBALFOUNDRIES Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage and analog bipolar devices
- Patent number 10,020,386
- Issue date Jul 10, 2018
- GLOBALFOUNDRIES Inc.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sub-fin doping method
- Patent number 10,002,793
- Issue date Jun 19, 2018
- GLOBALFOUNDRIES Inc.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device and method of manufacturing
- Patent number 9,966,313
- Issue date May 8, 2018
- GLOBALFOUNDRIES Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device with diffusion blocking layer in source/drain region
- Patent number 9,947,788
- Issue date Apr 17, 2018
- GLOBALFOUNDRIES Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having controlled final metal critical dimension
- Patent number 8,846,464
- Issue date Sep 30, 2014
- GLOBALFOUNDRIES Inc.
- Bingwu Liu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRANSISTORS WITH SEPARATELY-FORMED SOURCE AND DRAIN
- Publication number 20210249508
- Publication date Aug 12, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL TRENCH ISOLATION STRUCTURES
- Publication number 20210242306
- Publication date Aug 5, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Shiv Kumar MISHRA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH AN ASYMMETRICAL SOURCE AND DRAIN
- Publication number 20210242339
- Publication date Aug 5, 2021
- GLOBALFOUNDRIES U.S, Inc.
- Wenjun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH A HYBRID SOURCE OR DRAIN
- Publication number 20210242344
- Publication date Aug 5, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL SOURCE/DRAIN REGIONS FOR TRANSISTOR DEVICES AND METHODS OF FO...
- Publication number 20210234045
- Publication date Jul 29, 2021
- GLOBALFOUNDRIES U.S, Inc.
- Arkadiusz Malinowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL EPITAXIAL SEMICONDUCTOR MATERIAL REGIONS FOR TRANSISTOR DEVIC...
- Publication number 20210233999
- Publication date Jul 29, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Arkadiusz Malinowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC SOURCE DRAIN STRUCTURES
- Publication number 20210143254
- Publication date May 13, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Jiehui SHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL EPITAXIAL SEMICONDUCTOR MATERIAL REGIONS FOR TRANSISTOR DEVIC...
- Publication number 20210118993
- Publication date Apr 22, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Arkadiusz Malinowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH SEPARATELY-FORMED SOURCE AND DRAIN
- Publication number 20210050419
- Publication date Feb 18, 2021
- GLOBALFOUNDRIES INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE WITH COUNTER DOPING REGION BETWEEN N AND P WELLS UNDER GA...
- Publication number 20210043766
- Publication date Feb 11, 2021
- GLOBALFOUNDRIES INC.
- Baofu Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-WELL RESISTOR
- Publication number 20200411638
- Publication date Dec 31, 2020
- GLOBALFOUNDRIES INC.
- Shesh Mani PANDEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE AND METHOD OF MANUFACTURING
- Publication number 20180233415
- Publication date Aug 16, 2018
- GLOBALFOUNDRIES INC.
- Shesh Mani PANDEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE WITH DIFFUSION BLOCKING LAYER IN SOURCE/DRAIN REGION
- Publication number 20180175198
- Publication date Jun 21, 2018
- GLOBALFOUNDRIES INC.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOTCHED FIN STRUCTURES AND METHODS OF MANUFACTURE
- Publication number 20180108732
- Publication date Apr 19, 2018
- GLOBALFOUNDRIES INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE AND METHOD OF MANUFACTURING
- Publication number 20180040516
- Publication date Feb 8, 2018
- GLOBALFOUNDRIES INC.
- Shesh Mani PANDEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD, APPARATUS, AND SYSTEM FOR INCREASING DRIVE CURRENT OF FINFE...
- Publication number 20170309623
- Publication date Oct 26, 2017
- GLOBALFOUNDRIES INC.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A DOPED REGION IN A FIN USING A VARIABLE THICKNE...
- Publication number 20170288041
- Publication date Oct 5, 2017
- GLOBALFOUNDRIES INC.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE WITH DIFFUSION BLOCKING LAYER IN SOURCE/DRAIN REGION
- Publication number 20170229578
- Publication date Aug 10, 2017
- GLOBALFOUNDRIES INC.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING CONTROLLED FINAL METAL CRITICAL DIMENSION
- Publication number 20140273389
- Publication date Sep 18, 2014
- GLOBALFOUNDRIES INC.
- Bingwu Liu
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Transistors with separately-formed source and drain

Asymmetric source drain structures

Epitaxial semiconductor material regions for transistor devices and...

Dual trench isolation structures

Transistors with an asymmetrical source and drain

Epitaxial semiconductor material regions for transistor devices and...

Transistors with a hybrid source or drain

Source/drain regions for transistor devices and methods of forming...

Transistors with separately-formed source and drain

N-well resistor

STI structure with liner along lower portion of longitudinal sides...

Device with diffusion blocking layer in source/drain region

High-voltage and analog bipolar devices

Sub-fin doping method

FinFET device and method of manufacturing

Device with diffusion blocking layer in source/drain region

Semiconductor device having controlled final metal critical dimension

Patents Applicationslast 30 patents

TRANSISTORS WITH SEPARATELY-FORMED SOURCE AND DRAIN

DUAL TRENCH ISOLATION STRUCTURES

TRANSISTORS WITH AN ASYMMETRICAL SOURCE AND DRAIN

TRANSISTORS WITH A HYBRID SOURCE OR DRAIN

NOVEL SOURCE/DRAIN REGIONS FOR TRANSISTOR DEVICES AND METHODS OF FO...

NOVEL EPITAXIAL SEMICONDUCTOR MATERIAL REGIONS FOR TRANSISTOR DEVIC...

ASYMMETRIC SOURCE DRAIN STRUCTURES

NOVEL EPITAXIAL SEMICONDUCTOR MATERIAL REGIONS FOR TRANSISTOR DEVIC...

TRANSISTORS WITH SEPARATELY-FORMED SOURCE AND DRAIN

STRUCTURE WITH COUNTER DOPING REGION BETWEEN N AND P WELLS UNDER GA...

N-WELL RESISTOR

FINFET DEVICE AND METHOD OF MANUFACTURING

DEVICE WITH DIFFUSION BLOCKING LAYER IN SOURCE/DRAIN REGION

NOTCHED FIN STRUCTURES AND METHODS OF MANUFACTURE

FINFET DEVICE AND METHOD OF MANUFACTURING

METHOD, APPARATUS, AND SYSTEM FOR INCREASING DRIVE CURRENT OF FINFE...

METHOD FOR FORMING A DOPED REGION IN A FIN USING A VARIABLE THICKNE...

DEVICE WITH DIFFUSION BLOCKING LAYER IN SOURCE/DRAIN REGION

SEMICONDUCTOR DEVICE HAVING CONTROLLED FINAL METAL CRITICAL DIMENSION