Bartlomiej Adam KARDASZ

Person

Pleasanton, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Precessional spin current structure with non-magnetic insertion lay...
- Patent number 12,075,706
- Issue date Aug 27, 2024
- Integrated Silicon Solution, (Cayman) Inc.
- Bartlomiej Adam Kardasz
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for manufacturing a magnetic random-access memory device usi...
- Patent number 12,069,957
- Issue date Aug 20, 2024
- Integrated Silicon Solution, (Cayman) Inc.
- Jorge Vasquez
- G11 - INFORMATION STORAGE
Information Patent Grant
High retention storage layer using ultra-low RA MgO process in perp...
- Patent number 11,925,125
- Issue date Mar 5, 2024
- Integrated Silicon Solution, (Cayman) Inc.
- Bartlomiej Adam Kardasz
- G11 - INFORMATION STORAGE
Information Patent Grant
Precessional spin current structure for MRAM
- Patent number 11,355,699
- Issue date Jun 7, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Mustafa Pinarbasi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a magnetic random-access memory device usi...
- Patent number 11,329,217
- Issue date May 10, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Jorge Vasquez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory chip having nvm class and SRAM class MRAM elements...
- Patent number 11,329,099
- Issue date May 10, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Mustafa Pinarbasi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Precessional spin current structure for magnetic random access memo...
- Patent number 11,283,010
- Issue date Mar 22, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Jorge Vasquez
- G11 - INFORMATION STORAGE
Information Patent Grant
Precessional spin current structure with nonmagnetic insertion laye...
- Patent number 11,271,149
- Issue date Mar 8, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Bartlomiej Adam Kardasz
- G11 - INFORMATION STORAGE
Information Patent Grant
High retention storage layer using ultra-low RA MgO process in perp...
- Patent number 11,264,557
- Issue date Mar 1, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Bartlomiej Adam Kardasz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing magnetic memory element with post pillar f...
- Patent number 10,916,696
- Issue date Feb 9, 2021
- Spin Memory, Inc.
- Mustafa Pinarbasi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction memory element with improved reference lay...
- Patent number 10,879,454
- Issue date Dec 29, 2020
- Spin Memory, Inc.
- Bartlomiej Adam Kardasz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular magnetic anisotropy interface tunnel junction devices...
- Patent number 10,840,436
- Issue date Nov 17, 2020
- Spin Memory, Inc.
- Bartlomiej Kardasz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Precessional spin current magnetic tunnel junction devices and meth...
- Patent number 10,784,439
- Issue date Sep 22, 2020
- Spin Memory, Inc.
- Bartlomiej Kardasz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing high annealing temperature perpendicular ma...
- Patent number 10,734,574
- Issue date Aug 4, 2020
- Spin Memory, Inc.
- Bartlomiej Adam Kardasz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Precessional spin current structure with high in-plane magnetizatio...
- Patent number 10,672,976
- Issue date Jun 2, 2020
- Spin Memory, Inc.
- Mustafa Michael Pinarbasi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Precessional spin current structure with non-magnetic insertion lay...
- Patent number 10,665,777
- Issue date May 26, 2020
- Spin Memory, Inc.
- Bartlomiej Adam Kardasz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular magnetic tunnel junction retention and endurance impr...
- Patent number 10,651,370
- Issue date May 12, 2020
- Spin Memory, Inc.
- Mustafa Pinarbasi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin transfer torque structure for MRAM devices having a spin curre...
- Patent number 10,615,335
- Issue date Apr 7, 2020
- Spin Memory, Inc.
- Bartlomiej Adam Kardasz
- G11 - INFORMATION STORAGE
Information Patent Grant
Adjustable stabilizer/polarizer method for MRAM with enhanced stabi...
- Patent number 10,580,827
- Issue date Mar 3, 2020
- Spin Memory, Inc.
- Steven Watts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Precessional spin current structure for MRAM
- Patent number 10,553,787
- Issue date Feb 4, 2020
- Spin Memory, Inc.
- Mustafa Michael Pinarbasi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High annealing temperature perpendicular magnetic anisotropy struct...
- Patent number 10,468,590
- Issue date Nov 5, 2019
- Spin Memory, Inc.
- Bartlomiej Adam Kardasz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular magnetic tunnel junction device with skyrmionic enhan...
- Patent number 10,468,588
- Issue date Nov 5, 2019
- Spin Memory, Inc.
- Manfred Ernst Schabes
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Antiferromagnetic exchange coupling enhancement in perpendicular ma...
- Patent number 10,461,242
- Issue date Oct 29, 2019
- Spin Memory, Inc.
- Bartlomiej Adam Kardasz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction (MTJ) memory device having a composite fre...
- Patent number 10,424,357
- Issue date Sep 24, 2019
- SPIN MEMORY, INC.
- Michail Tzoufras
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction devices including an optimization layer
- Patent number 10,424,723
- Issue date Sep 24, 2019
- Spin Memory, Inc.
- Thomas Boone
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory having a pinning synthetic antiferromagnetic struct...
- Patent number 10,388,853
- Issue date Aug 20, 2019
- Spin Memory, Inc.
- Bartlomiej Adam Kardasz
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for manufacturing a magnetic memory device by pre-patterning...
- Patent number 10,374,153
- Issue date Aug 6, 2019
- Spin Memory, Inc.
- Jorge Vasquez
- G11 - INFORMATION STORAGE
Information Patent Grant
Perpendicular magnetic tunnel junction having improved reference la...
- Patent number 10,374,147
- Issue date Aug 6, 2019
- Spin Memory, Inc.
- Mustafa Pinarbasi
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods for manufacturing a perpendicular magnetic tunnel junction...
- Patent number 10,367,136
- Issue date Jul 30, 2019
- Spin Memory, Inc.
- Bartlomiej Adam Kardasz
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of manufacturing magnetic tunnel junction devices
- Patent number 10,367,139
- Issue date Jul 30, 2019
- Spin Memory, Inc.
- Thomas Boone
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR MANUFACTURING A MAGNETIC RANDOM-ACCESS MEMORY DEVICE USI...
- Publication number 20220246842
- Publication date Aug 4, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Jorge Vasquez
- G11 - INFORMATION STORAGE
Information Patent Application
PRECESSIONAL SPIN CURRENT STRUCTURE WITH NON-MAGNETIC INSERTION LAY...
- Publication number 20220165942
- Publication date May 26, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Bartlomiej Adam KARDASZ
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH RETENTION STORAGE LAYER USING ULTRA-LOW RA MgO PROCESS IN PERP...
- Publication number 20220149267
- Publication date May 12, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Bartlomiej Adam Kardasz
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS OF MANUFACTURE PRECESSIONAL SPIN CURRENT MAGNETIC TUNNEL JU...
- Publication number 20200411752
- Publication date Dec 31, 2020
- Spin Memory, Inc.
- Bartlomiej KARDASZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING MAGNETIC MEMORY ELEMENT WITH POST PILLAR F...
- Publication number 20200350493
- Publication date Nov 5, 2020
- Spin Memory, Inc.
- Mustafa Pinarbasi
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR MANUFACTURING A MAGNETIC RANDOM-ACCESS MEMORY DEVICE USI...
- Publication number 20200243757
- Publication date Jul 30, 2020
- Spin Memory, Inc.
- Jorge Vasquez
- G11 - INFORMATION STORAGE
Information Patent Application
Precessional Spin Current Structure for MRAM
- Publication number 20200220070
- Publication date Jul 9, 2020
- Spin Memory, Inc.
- Mustafa PINARBASI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRECESSIONAL SPIN CURRENT STRUCTURE WITH NON-MAGNETIC INSERTION LAY...
- Publication number 20200220074
- Publication date Jul 9, 2020
- Spin Memory, Inc.
- Bartlomiej Adam KARDASZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRECESSIONAL SPIN CURRENT STRUCTURE FOR MAGNETIC RANDOM ACCESS MEMO...
- Publication number 20200083442
- Publication date Mar 12, 2020
- Spin Memory, Inc.
- Jorge Vasquez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION MEMORY ELEMENT WITH IMPROVED REFERENCE LAY...
- Publication number 20200052034
- Publication date Feb 13, 2020
- Spin Transfer Technologies, Inc.
- Bartlomiej Adam Kardasz
- G11 - INFORMATION STORAGE
Information Patent Application
Method of Manufacturing High Annealing Temperature Perpendicular Ma...
- Publication number 20200035914
- Publication date Jan 30, 2020
- Spin Memory, Inc.
- Bartlomiej Adam KARDASZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY ELEMENT HAVING MgO ISOLATION LAYER
- Publication number 20190392879
- Publication date Dec 26, 2019
- Spin Memory, Inc.
- Jorge Vasquez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Perpendicular Magnetic Anisotropy Interface Tunnel Junction Devices
- Publication number 20190237664
- Publication date Aug 1, 2019
- Bartlomiej KARDASZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERPENDICULAR MAGNETIC TUNNEL JUNCTION DEVICE WITH SKYRMIONIC ENHAN...
- Publication number 20190214548
- Publication date Jul 11, 2019
- Spin Memory, Inc.
- Manfred Ernst Schabes
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETIC MEMORY CHIP HAVING NVM CLASS AND SRAM CLASS MRAM ELEMENTS...
- Publication number 20190206929
- Publication date Jul 4, 2019
- Spin Memory, Inc.
- Mustafa Pinarbasi
- G11 - INFORMATION STORAGE
Information Patent Application
PERPENDICULAR MAGNETIC TUNNEL JUNCTION DEVICE WITH PRECESSIONAL SPI...
- Publication number 20190207088
- Publication date Jul 4, 2019
- Spin Memory, Inc.
- Manfred Ernst Schabes
- G11 - INFORMATION STORAGE
Information Patent Application
Methods for Manufacturing a Perpendicular Magnetic Tunnel Junction...
- Publication number 20190207086
- Publication date Jul 4, 2019
- Spin Transfer Technologies, Inc.
- Bartlomiej Adam Kardasz
- G11 - INFORMATION STORAGE
Information Patent Application
Method for Manufacturing a Magnetic Memory Device by Pre-Patterning...
- Publication number 20190207104
- Publication date Jul 4, 2019
- Jorge Vasquez
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS OF MANUFACTURING MAGNETIC TUNNEL JUNCTION DEVICES
- Publication number 20190207105
- Publication date Jul 4, 2019
- Spin Transfer Technologies, Inc.
- Thomas BOONE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERPENDICULAR MAGNETIC TUNNEL JUNCTION RETENTION AND ENDURANCE IMPR...
- Publication number 20190207096
- Publication date Jul 4, 2019
- Spin Memory, Inc.
- Mustafa Pinarbasi
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Memory having a Pinning Synthetic Antiferromagnetic Struct...
- Publication number 20190207085
- Publication date Jul 4, 2019
- Spin Memory, Inc.
- Bartlomiej Adam Kardasz
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION DEVICES INCLUDING AN OPTIMIZATION LAYER
- Publication number 20190207087
- Publication date Jul 4, 2019
- Spin Transfer Technologies, Inc.
- Thomas BOONE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANTIFERROMAGNETIC EXCHANGE COUPLING ENHANCEMENT IN PERPENDICULAR MA...
- Publication number 20190207089
- Publication date Jul 4, 2019
- Spin Memory, Inc.
- Bartlomiej Adam Kardasz
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH RETENTION STORAGE LAYER USING ULTRA-LOW RA MgO PROCESS IN PERP...
- Publication number 20190207091
- Publication date Jul 4, 2019
- Spin Memory, Inc.
- Bartlomiej Adam Kardasz
- G11 - INFORMATION STORAGE
Information Patent Application
PERPENDICULAR MAGNETIC TUNNEL JUNCTION HAVING IMPROVED REFERENCE LA...
- Publication number 20190207092
- Publication date Jul 4, 2019
- Spin Memory, Inc.
- Mustafa Pinarbasi
- G11 - INFORMATION STORAGE
Information Patent Application
PERPENDICULAR MAGNETIC ANISOTROPY INTERFACE TUNNEL JUNCTION DEVICES...
- Publication number 20190207095
- Publication date Jul 4, 2019
- Spin Transfer Technologies, Inc.
- Bartlomiej KARDASZ
- G11 - INFORMATION STORAGE
Information Patent Application
Multi-Layer Magnetic Memory Devices
- Publication number 20190206464
- Publication date Jul 4, 2019
- Spin Transfer Technologies
- Michail Tzoufras
- G11 - INFORMATION STORAGE
Information Patent Application
PERPENDICULAR MAGNETIC TUNNEL JUNCTION DEVICE WITH SKYRMIONIC ASSIS...
- Publication number 20190206466
- Publication date Jul 4, 2019
- Spin Memory, Inc.
- Manfred Ernst Schabes
- G11 - INFORMATION STORAGE
Information Patent Application
PRECESSIONAL SPIN CURRENT MAGNETIC TUNNEL JUNCTION DEVICES AND METH...
- Publication number 20190207097
- Publication date Jul 4, 2019
- Spin Transfer Technologies, Inc.
- Bartlomiej KARDASZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Spin Transfer Torque Structure for MRAM Devices Having a Spin Curre...
- Publication number 20190109278
- Publication date Apr 11, 2019
- Spin Memory, Inc.
- Bartlomiej Adam KARDASZ
- G11 - INFORMATION STORAGE

Bartlomiej Adam KARDASZ

Person

Patents Grantslast 30 patents

Precessional spin current structure with non-magnetic insertion lay...

Method for manufacturing a magnetic random-access memory device usi...

High retention storage layer using ultra-low RA MgO process in perp...

Precessional spin current structure for MRAM

Method for manufacturing a magnetic random-access memory device usi...

Magnetic memory chip having nvm class and SRAM class MRAM elements...

Precessional spin current structure for magnetic random access memo...

Precessional spin current structure with nonmagnetic insertion laye...

High retention storage layer using ultra-low RA MgO process in perp...

Method for manufacturing magnetic memory element with post pillar f...

Magnetic tunnel junction memory element with improved reference lay...

Perpendicular magnetic anisotropy interface tunnel junction devices...

Precessional spin current magnetic tunnel junction devices and meth...

Method of manufacturing high annealing temperature perpendicular ma...

Precessional spin current structure with high in-plane magnetizatio...

Precessional spin current structure with non-magnetic insertion lay...

Perpendicular magnetic tunnel junction retention and endurance impr...

Spin transfer torque structure for MRAM devices having a spin curre...

Adjustable stabilizer/polarizer method for MRAM with enhanced stabi...

Precessional spin current structure for MRAM

High annealing temperature perpendicular magnetic anisotropy struct...

Perpendicular magnetic tunnel junction device with skyrmionic enhan...

Antiferromagnetic exchange coupling enhancement in perpendicular ma...

Magnetic tunnel junction (MTJ) memory device having a composite fre...

Magnetic tunnel junction devices including an optimization layer

Magnetic memory having a pinning synthetic antiferromagnetic struct...

Method for manufacturing a magnetic memory device by pre-patterning...

Perpendicular magnetic tunnel junction having improved reference la...

Methods for manufacturing a perpendicular magnetic tunnel junction...

Methods of manufacturing magnetic tunnel junction devices

Patents Applicationslast 30 patents

METHOD FOR MANUFACTURING A MAGNETIC RANDOM-ACCESS MEMORY DEVICE USI...

PRECESSIONAL SPIN CURRENT STRUCTURE WITH NON-MAGNETIC INSERTION LAY...

HIGH RETENTION STORAGE LAYER USING ULTRA-LOW RA MgO PROCESS IN PERP...

METHODS OF MANUFACTURE PRECESSIONAL SPIN CURRENT MAGNETIC TUNNEL JU...

METHOD FOR MANUFACTURING MAGNETIC MEMORY ELEMENT WITH POST PILLAR F...

METHOD FOR MANUFACTURING A MAGNETIC RANDOM-ACCESS MEMORY DEVICE USI...

Precessional Spin Current Structure for MRAM

PRECESSIONAL SPIN CURRENT STRUCTURE WITH NON-MAGNETIC INSERTION LAY...

PRECESSIONAL SPIN CURRENT STRUCTURE FOR MAGNETIC RANDOM ACCESS MEMO...

MAGNETIC TUNNEL JUNCTION MEMORY ELEMENT WITH IMPROVED REFERENCE LAY...

Method of Manufacturing High Annealing Temperature Perpendicular Ma...

MAGNETIC MEMORY ELEMENT HAVING MgO ISOLATION LAYER

Perpendicular Magnetic Anisotropy Interface Tunnel Junction Devices

PERPENDICULAR MAGNETIC TUNNEL JUNCTION DEVICE WITH SKYRMIONIC ENHAN...

MAGNETIC MEMORY CHIP HAVING NVM CLASS AND SRAM CLASS MRAM ELEMENTS...

PERPENDICULAR MAGNETIC TUNNEL JUNCTION DEVICE WITH PRECESSIONAL SPI...

Methods for Manufacturing a Perpendicular Magnetic Tunnel Junction...

Method for Manufacturing a Magnetic Memory Device by Pre-Patterning...

METHODS OF MANUFACTURING MAGNETIC TUNNEL JUNCTION DEVICES

PERPENDICULAR MAGNETIC TUNNEL JUNCTION RETENTION AND ENDURANCE IMPR...

Magnetic Memory having a Pinning Synthetic Antiferromagnetic Struct...

MAGNETIC TUNNEL JUNCTION DEVICES INCLUDING AN OPTIMIZATION LAYER

ANTIFERROMAGNETIC EXCHANGE COUPLING ENHANCEMENT IN PERPENDICULAR MA...

HIGH RETENTION STORAGE LAYER USING ULTRA-LOW RA MgO PROCESS IN PERP...

PERPENDICULAR MAGNETIC TUNNEL JUNCTION HAVING IMPROVED REFERENCE LA...

PERPENDICULAR MAGNETIC ANISOTROPY INTERFACE TUNNEL JUNCTION DEVICES...

Multi-Layer Magnetic Memory Devices

PERPENDICULAR MAGNETIC TUNNEL JUNCTION DEVICE WITH SKYRMIONIC ASSIS...

PRECESSIONAL SPIN CURRENT MAGNETIC TUNNEL JUNCTION DEVICES AND METH...

Spin Transfer Torque Structure for MRAM Devices Having a Spin Curre...