Bharat KRISHNAN

Person

Clifton Park, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Fin-type field effect transistor with reduced fin bulge and method
- Patent number 11,264,382
- Issue date Mar 1, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple threshold voltage devices
- Patent number 11,094,598
- Issue date Aug 17, 2021
- GLOBALFOUNDRIES U.S. INC.
- Bharat V. Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device with highly active acceptor doping and method of production...
- Patent number 10,886,178
- Issue date Jan 5, 2021
- GLOBALFOUNDRIES Inc.
- Tek Po Rinus Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-type field effect transistor with reduced fin bulge and method
- Patent number 10,811,411
- Issue date Oct 20, 2020
- GLOBALFOUNDRIES Inc.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protected trench isolation for fin-type field-effect transistors
- Patent number 10,312,150
- Issue date Jun 4, 2019
- GLOBALFOUNDRIES Inc.
- Fuad Al-Amoody
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Microwave annealing of flowable oxides with trap layers
- Patent number 10,211,045
- Issue date Feb 19, 2019
- GLOBALFOUNDRIES Inc.
- Rishikesh Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFETs with strained channels and reduced on state resistance
- Patent number 10,134,876
- Issue date Nov 20, 2018
- GLOBALFOUNDRIES Inc.
- Bharat V. Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure including two-dimensional and three-dimensi...
- Patent number 10,121,706
- Issue date Nov 6, 2018
- GLOBALFOUNDRIES Inc.
- Rinus T. P. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors with reduced parasitic resistances and method
- Patent number 10,062,692
- Issue date Aug 28, 2018
- GLOBALFOUNDRIES Inc.
- Shishir K. Ray
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Siloxane and organic-based MOL contact patterning
- Patent number 10,056,458
- Issue date Aug 21, 2018
- GLOBALFOUNDRIES Inc.
- Chang Ho Maeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming defect-free relaxed SiGe fins
- Patent number 9,882,052
- Issue date Jan 30, 2018
- GLOBALFOUNDRIES Inc.
- Robert Judson Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits and methods for their fabrication
- Patent number 9,640,423
- Issue date May 2, 2017
- GLOBALFOUNDRIES, INC.
- Bharat Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating transistors having resurfaced source/drain regions with...
- Patent number 9,559,166
- Issue date Jan 31, 2017
- GLOBALFOUNDRIES Inc.
- Shishir Ray
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating integrated circuits
- Patent number 9,472,465
- Issue date Oct 18, 2016
- GLOBALFOUNDRIES, INC.
- Bongki Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits having finFETs with improved doped channel regi...
- Patent number 9,287,180
- Issue date Mar 15, 2016
- GLOBALFOUNDRIES, INC.
- Jinping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with increased space and volume between sha...
- Patent number 9,165,767
- Issue date Oct 20, 2015
- GLOBALFOUNDRIES Inc.
- Bharat Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits having FinFETs with improved doped channel regi...
- Patent number 9,093,476
- Issue date Jul 28, 2015
- GLOBALFOUNDRIES, INC.
- Jinping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing gate expansion after source and drain implant in gate last...
- Patent number 9,059,218
- Issue date Jun 16, 2015
- GLOBALFOUNDRIES Inc.
- Bharat Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for adjusting threshold voltage in a replaceme...
- Patent number 8,912,085
- Issue date Dec 16, 2014
- GLOBALFOUNDRIES Inc.
- Bongki Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of reverse shallow trench isolation structures with sup...
- Patent number 8,815,699
- Issue date Aug 26, 2014
- GLOBALFOUNDRIES Inc.
- Tong Weihua
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING BARRIER LAYER BETWEEN ELECTRODE L...
- Publication number 20230422639
- Publication date Dec 28, 2023
- Intel Corporation
- Shafaat Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARBON-NITRIDE-CARBON HARDMASK LAYER
- Publication number 20230260788
- Publication date Aug 17, 2023
- Intel Corporation
- Huy Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE THRESHOLD VOLTAGE DEVICES
- Publication number 20210013109
- Publication date Jan 14, 2021
- GLOBALFOUNDRIES INC.
- Bharat V. KRISHNAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-TYPE FIELD EFFECT TRANSISTOR WITH REDUCED FIN BULGE AND METHOD
- Publication number 20210005601
- Publication date Jan 7, 2021
- GLOBALFOUNDRIES INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A BARRIER LAYER MADE OF TWO DIMENSIONAL...
- Publication number 20200312775
- Publication date Oct 1, 2020
- GLOBALFOUNDRIES INC.
- RINUS TEK PO LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE WITH HIGHLY ACTIVE ACCEPTOR DOPING AND METHOD OF PRODUCTION...
- Publication number 20200066593
- Publication date Feb 27, 2020
- GLOBALFOUNDRIES INC.
- Tek Po Rinus LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFETs WITH STRAINED CHANNELS AND REDUCED ON STATE RESISTANCE
- Publication number 20180286982
- Publication date Oct 4, 2018
- GLOBALFOUNDRIES INC.
- Bharat V. KRISHNAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS WITH REDUCED PARASITIC RESISTANCES AND METHOD
- Publication number 20180247936
- Publication date Aug 30, 2018
- GLOBALFOUNDRIES INC.
- SHISHIR K. RAY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING TWO-DIMENSIONAL AND THREE-DIMENSI...
- Publication number 20180151449
- Publication date May 31, 2018
- GLOBALFOUNDRIES INC.
- Rinus T. P. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF BAND-EDGE CONTACTS
- Publication number 20180138177
- Publication date May 17, 2018
- GLOBALFOUNDRIES INC.
- Tek Po Rinus LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING DEFECT-FREE RELAXED SiGe FINS
- Publication number 20180130656
- Publication date May 10, 2018
- GLOBALFOUNDRIES INC.
- Judson Robert Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING DEFECT-FREE RELAXED SIGE FINS
- Publication number 20180006155
- Publication date Jan 4, 2018
- GLOBALFOUNDRIES INC.
- Robert Judson HOLT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILOXANE AND ORGANIC-BASED MOL CONTACT PATTERNING
- Publication number 20170200792
- Publication date Jul 13, 2017
- GLOBALFOUNDRIES INC.
- Chang Ho MAENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS AND METHODS FOR THEIR FABRICATION
- Publication number 20170033178
- Publication date Feb 2, 2017
- GLOBALFOUNDRIES, Inc.
- Bharat Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING REPLACEMENT FINS COMPRISED OF MULTIPLE LAYERS OF...
- Publication number 20170033181
- Publication date Feb 2, 2017
- GLOBALFOUNDRIES INC.
- Timothy J. McArdle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATING TRANSISTORS HAVING RESURFACED SOURCE/DRAIN REGIONS WITH...
- Publication number 20160225852
- Publication date Aug 4, 2016
- GLOBALFOUNDRIES INC.
- Shishir RAY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH INCREASED SPACE AND VOLUME BETWEEN SHA...
- Publication number 20160005657
- Publication date Jan 7, 2016
- GLOBALFOUNDRIES INC.
- Bharat KRISHNAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FABRICATING INTEGRATED CIRCUITS
- Publication number 20150325681
- Publication date Nov 12, 2015
- Bongki Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS HAVING FINFETS WITH IMPROVED DOPED CHANNEL REGI...
- Publication number 20150294915
- Publication date Oct 15, 2015
- GLOBALFOUNDRIES, Inc.
- Jinping LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH STRESSED SEMICONDUCTOR SUBSTRATES AND PROC...
- Publication number 20150287824
- Publication date Oct 8, 2015
- GLOBALFOUNDRIES, Inc.
- Shishir Ray
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING EPITAXIAL SEMICONDUCTOR MATERIAL ON SOURCE/DRAIN...
- Publication number 20150214369
- Publication date Jul 30, 2015
- GLOBALFOUNDRIES Inc.
- Jody A. Fronheiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPANT DIFFUSION BARRIER TO FORM ISOLATED SOURCE/DRAINS IN A SEMICO...
- Publication number 20150214345
- Publication date Jul 30, 2015
- GLOBALFOUNDRIES INC.
- Jing Wan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED FIN STRUCTURES AND METHODS OF FABRICATION
- Publication number 20150194307
- Publication date Jul 9, 2015
- GLOBALFOUNDRIES INC.
- Churamani GAIRE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INCREASED SPACE BETWEEN EPITAXY ON ADJACENT FINS OF FINFET
- Publication number 20150123146
- Publication date May 7, 2015
- GLOBALFOUNDRIES INC.
- Bharat KRISHNAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH SIGMA CAVITY WITH MULTIPLE EPITAXIAL MATERIAL REGIONS
- Publication number 20150097197
- Publication date Apr 9, 2015
- GLOBALFOUNDRIES INC.
- Michael Ganz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING GATE EXPANSION AFTER SOURCE AND DRAIN IMPLANT IN GATE LAST...
- Publication number 20150076622
- Publication date Mar 19, 2015
- Bharat Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS HAVING FINFETS WITH IMPROVED DOPED CHANNEL REGI...
- Publication number 20150035062
- Publication date Feb 5, 2015
- GLOBALFOUNDRIES, Inc.
- Jinping LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF REVERSE SHALLOW TRENCH ISOLATION STRUCTURES WITH SUP...
- Publication number 20140124794
- Publication date May 8, 2014
- GLOBALFOUNDRIES INC.
- Tong Weihua
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF TAILORING SILICON TRENCH PROFILE FOR SUPER STEEP RETROGRA...
- Publication number 20140070358
- Publication date Mar 13, 2014
- GLOBALFOUNDRIES INC.
- Yi Qi
- H01 - BASIC ELECTRIC ELEMENTS

Bharat KRISHNAN

Person

Patents Grantslast 30 patents

Fin-type field effect transistor with reduced fin bulge and method

Multiple threshold voltage devices

Device with highly active acceptor doping and method of production...

Fin-type field effect transistor with reduced fin bulge and method

Protected trench isolation for fin-type field-effect transistors

Microwave annealing of flowable oxides with trap layers

FinFETs with strained channels and reduced on state resistance

Semiconductor structure including two-dimensional and three-dimensi...

Field effect transistors with reduced parasitic resistances and method

Siloxane and organic-based MOL contact patterning

Forming defect-free relaxed SiGe fins

Integrated circuits and methods for their fabrication

Fabricating transistors having resurfaced source/drain regions with...

Methods of fabricating integrated circuits

Integrated circuits having finFETs with improved doped channel regi...

Semiconductor structure with increased space and volume between sha...

Integrated circuits having FinFETs with improved doped channel regi...

Reducing gate expansion after source and drain implant in gate last...

Method and apparatus for adjusting threshold voltage in a replaceme...

Fabrication of reverse shallow trench isolation structures with sup...

Patents Applicationslast 30 patents

SEMICONDUCTOR STRUCTURE INCLUDING BARRIER LAYER BETWEEN ELECTRODE L...

CARBON-NITRIDE-CARBON HARDMASK LAYER

MULTIPLE THRESHOLD VOLTAGE DEVICES

FIN-TYPE FIELD EFFECT TRANSISTOR WITH REDUCED FIN BULGE AND METHOD

SEMICONDUCTOR DEVICE HAVING A BARRIER LAYER MADE OF TWO DIMENSIONAL...

DEVICE WITH HIGHLY ACTIVE ACCEPTOR DOPING AND METHOD OF PRODUCTION...

FINFETs WITH STRAINED CHANNELS AND REDUCED ON STATE RESISTANCE

FIELD EFFECT TRANSISTORS WITH REDUCED PARASITIC RESISTANCES AND METHOD

SEMICONDUCTOR STRUCTURE INCLUDING TWO-DIMENSIONAL AND THREE-DIMENSI...

FORMATION OF BAND-EDGE CONTACTS

FORMING DEFECT-FREE RELAXED SiGe FINS

FORMING DEFECT-FREE RELAXED SIGE FINS

SILOXANE AND ORGANIC-BASED MOL CONTACT PATTERNING

INTEGRATED CIRCUITS AND METHODS FOR THEIR FABRICATION

METHODS OF FORMING REPLACEMENT FINS COMPRISED OF MULTIPLE LAYERS OF...

FABRICATING TRANSISTORS HAVING RESURFACED SOURCE/DRAIN REGIONS WITH...

SEMICONDUCTOR STRUCTURE WITH INCREASED SPACE AND VOLUME BETWEEN SHA...

METHODS OF FABRICATING INTEGRATED CIRCUITS

INTEGRATED CIRCUITS HAVING FINFETS WITH IMPROVED DOPED CHANNEL REGI...

INTEGRATED CIRCUITS WITH STRESSED SEMICONDUCTOR SUBSTRATES AND PROC...

METHODS OF FORMING EPITAXIAL SEMICONDUCTOR MATERIAL ON SOURCE/DRAIN...

DOPANT DIFFUSION BARRIER TO FORM ISOLATED SOURCE/DRAINS IN A SEMICO...

STRAINED FIN STRUCTURES AND METHODS OF FABRICATION

INCREASED SPACE BETWEEN EPITAXY ON ADJACENT FINS OF FINFET

FINFET WITH SIGMA CAVITY WITH MULTIPLE EPITAXIAL MATERIAL REGIONS

REDUCING GATE EXPANSION AFTER SOURCE AND DRAIN IMPLANT IN GATE LAST...

INTEGRATED CIRCUITS HAVING FINFETS WITH IMPROVED DOPED CHANNEL REGI...

FABRICATION OF REVERSE SHALLOW TRENCH ISOLATION STRUCTURES WITH SUP...

METHOD OF TAILORING SILICON TRENCH PROFILE FOR SUPER STEEP RETROGRA...