Bhaskar Srinivasan

Person

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated circuits including composite dielectric layer
- Patent number 12,170,310
- Issue date Dec 17, 2024
- Texas Instruments Incorporated
- Guruvayurappan S. Mathur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Carbon and/or oxygen doped polysilicon resistor
- Patent number 12,027,515
- Issue date Jul 2, 2024
- Texas Instruments Incorporated
- Yanbiao Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits having dielectric layers including an anti-refl...
- Patent number 12,002,846
- Issue date Jun 4, 2024
- Texas Instruments Incorporated
- Poornika Fernandes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor comprising a bismuth metal oxide-based lead titanate thin...
- Patent number 11,849,590
- Issue date Dec 19, 2023
- Texas Instruments Incorporated
- Carl Sebastian Morandi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon resistor using reduced grain size polysilicon
- Patent number 11,817,454
- Issue date Nov 14, 2023
- Texas Instruments Incorporated
- Yanbiao Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC having trench-based metal-insulator-metal capacitor
- Patent number 11,616,011
- Issue date Mar 28, 2023
- Texas Instruments Incorporated
- Mona M. Eissa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for etching metal interconnect layers
- Patent number 11,605,587
- Issue date Mar 14, 2023
- Texas Instruments Incorporated
- Poornika Fernandes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits having dielectric layers including an anti-refl...
- Patent number 11,171,200
- Issue date Nov 9, 2021
- Texas Instruments Incorporated
- Poornika Fernandes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor comprising a bismuth metal oxide-based lead titanate thin...
- Patent number 11,158,642
- Issue date Oct 26, 2021
- Texas Instruments Incorporated
- Carl Sebastian Morandi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC having trench-based metal-insulator-metal capacitor
- Patent number 11,075,157
- Issue date Jul 27, 2021
- Texas Instruments Incorporated
- Mona M. Eissa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC with ion milled thin-film resistors
- Patent number 10,680,056
- Issue date Jun 9, 2020
- Texas Instruments Incorporated
- Bhaskar Srinivasan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC with top side capacitor having lateral regions with thinned capa...
- Patent number 10,665,663
- Issue date May 26, 2020
- Texas Instruments Incorporated
- Poornika Fernandes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Analog capacitor on submicron pitch metal level
- Patent number 10,608,075
- Issue date Mar 31, 2020
- Texas Instruments Incorporated
- Bhaskar Srinivasan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Analog capacitor on submicron pitch metal level
- Patent number 10,177,215
- Issue date Jan 8, 2019
- Texas Instruments Incorporated
- Bhaskar Srinivasan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor with improved voltage coefficients
- Patent number 10,157,915
- Issue date Dec 18, 2018
- Texas Instruments Incorporated
- Bhaskar Srinivasan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In-situ doped polysilicon filler for trenches
- Patent number 9,691,751
- Issue date Jun 27, 2017
- Texas Instruments Incorporated
- Bhaskar Srinivasan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a non-volatile resistive oxide memory cell and m...
- Patent number 9,666,801
- Issue date May 30, 2017
- Micron Technology, Inc.
- Nishant Sinha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process to enable ferroelectric layers on large area substrates
- Patent number 9,583,336
- Issue date Feb 28, 2017
- Texas Instruments Incorporated
- Bhaskar Srinivasan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile resistive oxide memory cells and methods of forming no...
- Patent number 9,577,186
- Issue date Feb 21, 2017
- Micron Technology, Inc.
- Bhaskar Srinivasan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory cells with two discrete layers of programmable mat...
- Patent number 9,406,878
- Issue date Aug 2, 2016
- Micron Technology, Inc.
- Roy E. Meade
- G11 - INFORMATION STORAGE
Information Patent Grant
Select devices for memory cell applications
- Patent number 9,349,445
- Issue date May 24, 2016
- Micron Technology, Inc.
- David H. Wells
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of forming a non-volatile resistive oxide memory cell and m...
- Patent number 9,343,665
- Issue date May 17, 2016
- Micron Technology, Inc.
- Nishant Sinha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Adhesion of ferroelectric material to underlying conductive capacit...
- Patent number 9,305,998
- Issue date Apr 5, 2016
- Texas Instruments Incorporated
- Bhaskar Srinivasan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Memory cells, non-volatile memory arrays, methods of operating memo...
- Patent number 9,275,728
- Issue date Mar 1, 2016
- Micron Technology, Inc.
- Bhaskar Srinivasan
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cells containing metal oxides
- Patent number 9,142,766
- Issue date Sep 22, 2015
- Micron Technology, Inc.
- Gurtej S. Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of reading and using memristor memory cells with a short re...
- Patent number 9,135,995
- Issue date Sep 15, 2015
- Micron Technology, Inc.
- Bhaskar Srinivasan
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of forming capacitors having dielectric regions that includ...
- Patent number 8,993,044
- Issue date Mar 31, 2015
- Micron Technology, Inc.
- Rishikesh Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming memory cells
- Patent number 8,962,387
- Issue date Feb 24, 2015
- Micron Technology, Inc.
- Gurtej S. Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-step deposition of ferroelectric dielectric material
- Patent number 8,962,350
- Issue date Feb 24, 2015
- Texas Instruments Incorporated
- Bhaskar Srinivasan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Select devices including an open volume, and related methods, memor...
- Patent number 8,957,403
- Issue date Feb 17, 2015
- Micron Technology, Inc.
- Bhaskar Srinivasan
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE WITH NITROGEN DOPED FIELD RELIEF DIELECTRIC LAYER
- Publication number 20250006836
- Publication date Jan 2, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Jackson Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Carbon and/or Oxygen Doped Polysilicon Resistor
- Publication number 20240312984
- Publication date Sep 19, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Yanbiao Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reducing Defects In a Polysilicon Overlaid Fin Structure
- Publication number 20240290785
- Publication date Aug 29, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Abbas Ali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC SILICON NITRIDE BARRIER DEPOSITION PROCESS FOR IMPROVED...
- Publication number 20230386907
- Publication date Nov 30, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Qi-Zhong Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SMALL GRAIN SIZE POLYSILICON ENGINEERING FOR THRESHOLD VOLTAGE MISM...
- Publication number 20230245891
- Publication date Aug 3, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Bhaskar Srinivasan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR SEMICONDUCTOR DEVICE AND METHOD OF FORM...
- Publication number 20230178372
- Publication date Jun 8, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Bhaskar Srinivasan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL RESISTOR INTEGRATION
- Publication number 20230154915
- Publication date May 18, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Bhaskar Srinivasan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Carbon and/or Oxygen Doped Polysilicon Resistor
- Publication number 20230112644
- Publication date Apr 13, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Yanbiao Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLYSILICON RESISTOR USING REDUCED GRAIN SIZE POLYSILICON
- Publication number 20220238516
- Publication date Jul 28, 2022
- Yanbiao Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS HAVING DIELECTRIC LAYERS INCLUDING AN ANTI-REFL...
- Publication number 20220069067
- Publication date Mar 3, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Poornika FERNANDES
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR COMPRISING A BISMUTH METAL OXIDE-BASED LEAD TITANATE THIN...
- Publication number 20220005814
- Publication date Jan 6, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Carl Sebastian MORANDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IC HAVING TRENCH-BASED METAL-INSULATOR-METAL CAPACITOR
- Publication number 20210327802
- Publication date Oct 21, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Mona M. Eissa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS HAVING DIELECTRIC LAYERS INCLUDING AN ANTI-REFL...
- Publication number 20210098565
- Publication date Apr 1, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Poornika FERNANDES
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IC HAVING TRENCH-BASED METAL-INSULATOR-METAL CAPACITOR
- Publication number 20210074630
- Publication date Mar 11, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Mona M. Eissa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS INCLUDING COMPOSITE DIELECTRIC LAYER
- Publication number 20200411633
- Publication date Dec 31, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Guruvayurappan S. MATHUR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR ETCHING METAL INTERCONNECT LAYERS
- Publication number 20200328149
- Publication date Oct 15, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Poornika FERNANDES
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IC WITH ION MILLED THIN-FILM RESISTORS
- Publication number 20200212167
- Publication date Jul 2, 2020
- TEXAS INSTRUMENTS INCORPORATED
- BHASKAR SRINIVASAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IC WITH TOP SIDE CAPACITOR HAVING LATERAL REGIONS WITH THINNED CAPA...
- Publication number 20200161414
- Publication date May 21, 2020
- TEXAS INSTRUMENTS INCORPORATED
- POORNIKA FERNANDES
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANALOG CAPACITOR ON SUBMICRON PITCH METAL LEVEL
- Publication number 20190157379
- Publication date May 23, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Bhaskar Srinivasan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR COMPRISING A BISMUTH METAL OXIDE-BASED LEAD TITANATE THIN...
- Publication number 20180226418
- Publication date Aug 9, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Carl Sebastian MORANDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN-SITU DOPED THEN UNDOPED POLYSILICON FILLER FOR TRENCHES
- Publication number 20170221983
- Publication date Aug 3, 2017
- TEXAS INSTRUMENTS INCORPORATED
- BHASKAR SRINIVASAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming a Non-Volatile Resistive Oxide Memory Cell and M...
- Publication number 20160260899
- Publication date Sep 8, 2016
- Micron Technology, Inc.
- Nishant Sinha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN-SITU DOPED POLYSILICON FILLER FOR TRENCHES
- Publication number 20160172235
- Publication date Jun 16, 2016
- TEXAS INSTRUMENTS INCORPORATED
- BHASKAR SRINIVASAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS TO IMPROVE THE CRYSTALLINITY OF PbZrTiO3 AND Pt FILMS FOR M...
- Publication number 20150380635
- Publication date Dec 31, 2015
- TEXAS INSTRUMENTS INCORPORATED
- Bhaskar Srinivasan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Memory Cells and Methods of Forming Memory Cells
- Publication number 20150137065
- Publication date May 21, 2015
- Micron Technology, Inc.
- Gurtej S. Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING INSULATIVE ELEMENTS
- Publication number 20150140773
- Publication date May 21, 2015
- Micron Technology, Inc.
- Vassil Antonov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Capacitors Having Dielectric Regions that Include Multiple Metal Ox...
- Publication number 20150001674
- Publication date Jan 1, 2015
- Micron Technology, Inc.
- Rishikesh Krishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Cells, Methods of Programming Memory Cells, and Methods of F...
- Publication number 20140332751
- Publication date Nov 13, 2014
- Roy E. Meade
- G11 - INFORMATION STORAGE
Information Patent Application
Multi-Step Deposition of Ferroelectric Dielectric Material
- Publication number 20140225226
- Publication date Aug 14, 2014
- TEXAS INSTRUMENTS INCORPORATED
- Bhaskar Srinivasan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Adhesion of Ferroelectric Material to Underlying Conductive Capacit...
- Publication number 20140227805
- Publication date Aug 14, 2014
- TEXAS INSTRUMENTS INCORPORATED
- Bhaskar Srinivasan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Bhaskar Srinivasan

Person

Patents Grantslast 30 patents

Integrated circuits including composite dielectric layer

Carbon and/or oxygen doped polysilicon resistor

Integrated circuits having dielectric layers including an anti-refl...

Capacitor comprising a bismuth metal oxide-based lead titanate thin...

Polysilicon resistor using reduced grain size polysilicon

IC having trench-based metal-insulator-metal capacitor

Methods for etching metal interconnect layers

Integrated circuits having dielectric layers including an anti-refl...

Capacitor comprising a bismuth metal oxide-based lead titanate thin...

IC having trench-based metal-insulator-metal capacitor

IC with ion milled thin-film resistors

IC with top side capacitor having lateral regions with thinned capa...

Analog capacitor on submicron pitch metal level

Analog capacitor on submicron pitch metal level

Capacitor with improved voltage coefficients

In-situ doped polysilicon filler for trenches

Methods of forming a non-volatile resistive oxide memory cell and m...

Process to enable ferroelectric layers on large area substrates

Non-volatile resistive oxide memory cells and methods of forming no...

Resistive memory cells with two discrete layers of programmable mat...

Select devices for memory cell applications

Methods of forming a non-volatile resistive oxide memory cell and m...

Adhesion of ferroelectric material to underlying conductive capacit...

Memory cells, non-volatile memory arrays, methods of operating memo...

Memory cells containing metal oxides

Methods of reading and using memristor memory cells with a short re...

Methods of forming capacitors having dielectric regions that includ...

Methods of forming memory cells

Multi-step deposition of ferroelectric dielectric material

Select devices including an open volume, and related methods, memor...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE WITH NITROGEN DOPED FIELD RELIEF DIELECTRIC LAYER

Carbon and/or Oxygen Doped Polysilicon Resistor

Reducing Defects In a Polysilicon Overlaid Fin Structure

DIELECTRIC SILICON NITRIDE BARRIER DEPOSITION PROCESS FOR IMPROVED...

SMALL GRAIN SIZE POLYSILICON ENGINEERING FOR THRESHOLD VOLTAGE MISM...

FIN FIELD-EFFECT TRANSISTOR SEMICONDUCTOR DEVICE AND METHOD OF FORM...

DUAL RESISTOR INTEGRATION

Carbon and/or Oxygen Doped Polysilicon Resistor

POLYSILICON RESISTOR USING REDUCED GRAIN SIZE POLYSILICON

INTEGRATED CIRCUITS HAVING DIELECTRIC LAYERS INCLUDING AN ANTI-REFL...

CAPACITOR COMPRISING A BISMUTH METAL OXIDE-BASED LEAD TITANATE THIN...

IC HAVING TRENCH-BASED METAL-INSULATOR-METAL CAPACITOR

INTEGRATED CIRCUITS HAVING DIELECTRIC LAYERS INCLUDING AN ANTI-REFL...

IC HAVING TRENCH-BASED METAL-INSULATOR-METAL CAPACITOR

INTEGRATED CIRCUITS INCLUDING COMPOSITE DIELECTRIC LAYER

METHODS FOR ETCHING METAL INTERCONNECT LAYERS

IC WITH ION MILLED THIN-FILM RESISTORS

IC WITH TOP SIDE CAPACITOR HAVING LATERAL REGIONS WITH THINNED CAPA...

ANALOG CAPACITOR ON SUBMICRON PITCH METAL LEVEL

CAPACITOR COMPRISING A BISMUTH METAL OXIDE-BASED LEAD TITANATE THIN...

IN-SITU DOPED THEN UNDOPED POLYSILICON FILLER FOR TRENCHES

Methods of Forming a Non-Volatile Resistive Oxide Memory Cell and M...

IN-SITU DOPED POLYSILICON FILLER FOR TRENCHES

METHODS TO IMPROVE THE CRYSTALLINITY OF PbZrTiO3 AND Pt FILMS FOR M...

Memory Cells and Methods of Forming Memory Cells

METHODS OF FORMING INSULATIVE ELEMENTS

Capacitors Having Dielectric Regions that Include Multiple Metal Ox...

Memory Cells, Methods of Programming Memory Cells, and Methods of F...

Multi-Step Deposition of Ferroelectric Dielectric Material

Adhesion of Ferroelectric Material to Underlying Conductive Capacit...