Bin Yang

Person

Chappaqua, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods of forming group III-V semiconductor materials on group IV...
- Patent number 9,275,861
- Issue date Mar 1, 2016
- GLOBALFOUNDRIES Inc.
- Li Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multigate structure formed with electroless metal deposition
- Patent number 9,099,327
- Issue date Aug 4, 2015
- International Business Machines Corporation
- Wilfried Haensch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form silicide contact in trenches
- Patent number 9,059,096
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Michael A. Guillorn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device fabrication method for improved isolation regi...
- Patent number 8,987,110
- Issue date Mar 24, 2015
- GLOBALFOUNDRIES, INC.
- Man Fai Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to control metal semiconductor micro-structure
- Patent number 8,987,135
- Issue date Mar 24, 2015
- International Business Machines Corporation
- Christian Lavoie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual work function FinFET structures and methods for fabricating th...
- Patent number 8,975,141
- Issue date Mar 10, 2015
- GLOBALFOUNDRIES, INC.
- Andy C. Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation extension
- Patent number 8,956,948
- Issue date Feb 17, 2015
- GLOBALFOUNDRIES Inc.
- Yanxiang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multigate structure formed with electroless metal deposition
- Patent number 8,936,978
- Issue date Jan 20, 2015
- International Business Machines Corporation
- Wilfried Haensch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circular transmission line methods compatible with combinatorial pr...
- Patent number 8,854,067
- Issue date Oct 7, 2014
- Intermolecular, Inc.
- Amol Joshi
- G01 - MEASURING TESTING
Information Patent Grant
Metal gate fill by optimizing etch in sacrificial gate profile
- Patent number 8,765,537
- Issue date Jul 1, 2014
- GLOBALFOUNDRIES Inc.
- Man Fai Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of band edge gate metals as source drain contacts
- Patent number 8,741,753
- Issue date Jun 3, 2014
- International Business Machines Corporation
- Kisik Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming barrier regions within regions of insulating ma...
- Patent number 8,680,624
- Issue date Mar 25, 2014
- GLOBALFOUNDRIES, INC.
- Man Fai Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having stressor regions and related fabricati...
- Patent number 8,674,438
- Issue date Mar 18, 2014
- GLOBALFOUNDRIES, INC.
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating an epitaxial Ni silicide film
- Patent number 8,658,530
- Issue date Feb 25, 2014
- International Business Machines Corporation
- Marwan H. Khater
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET integrated circuit with uniformly thin silicide layer and me...
- Patent number 8,652,963
- Issue date Feb 18, 2014
- GLOBALFOUNDRIES, INC.
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ETSOI with reduced extension resistance
- Patent number 8,518,758
- Issue date Aug 27, 2013
- GLOBALFOUNDRIES Inc.
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form uniform silicide by selective implantation
- Patent number 8,492,275
- Issue date Jul 23, 2013
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI schottky source/drain device structure to control encroachment...
- Patent number 8,482,084
- Issue date Jul 9, 2013
- International Business Machines Corporation
- Marwan H. Khater
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to control metal semiconductor micro-structure
- Patent number 8,456,011
- Issue date Jun 4, 2013
- International Business Machines Corporation
- Christian Lavoie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Short channel semiconductor devices with reduced halo diffusion
- Patent number 8,445,342
- Issue date May 21, 2013
- GLOBALFOUNDRIES Inc.
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of epitaxial Ni silicide
- Patent number 8,415,748
- Issue date Apr 9, 2013
- International Business Machines Corporation
- Marwan H. Khater
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicide contact formation
- Patent number 8,404,589
- Issue date Mar 26, 2013
- International Business Machines Corporation
- Andrew J. Kellock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having stressor regions and related fabricati...
- Patent number 8,394,691
- Issue date Mar 12, 2013
- GLOBALFOUNDRIES, INC.
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor transistor device structure with back side source/dra...
- Patent number 8,373,228
- Issue date Feb 12, 2013
- GLOBALFOUNDRIES, INC.
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with reduced junction leakage and an associate...
- Patent number 8,349,716
- Issue date Jan 8, 2013
- International Business Machines Corporation
- Ming Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
eFUSE enablement with thin polysilicon or amorphous-silicon gate-st...
- Patent number 8,329,515
- Issue date Dec 11, 2012
- GLOBALFOUNDRIES Inc.
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor transistor device structure with back side gate conta...
- Patent number 8,294,211
- Issue date Oct 23, 2012
- GLOBALFOUNDRIES, INC.
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-semiconductor intermixed regions
- Patent number 8,278,200
- Issue date Oct 2, 2012
- International Business Machines Corpration
- Christian Lavoie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming silicides of different thicknesses on different...
- Patent number 8,236,693
- Issue date Aug 7, 2012
- Advanced Micro Devices, Inc.
- Wen Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming barrier regions within regions of insulating ma...
- Patent number 8,222,093
- Issue date Jul 17, 2012
- GLOBALFOUNDRIES, INC.
- Man Fai Ng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ETSOI WITH REDUCED EXTENSION RESISTANCE
- Publication number 20160260841
- Publication date Sep 8, 2016
- GLOBALFOUNDRIES INC.
- Bin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal-insulator-semiconductor (MIS) contact with controlled defect...
- Publication number 20150380309
- Publication date Dec 31, 2015
- INTERMOLECULAR INC.
- Salil Mujumdar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR DEPOSITING AN ALUMINUM OXIDE LAYER OVER GERMANIUM SUSBT...
- Publication number 20150093914
- Publication date Apr 2, 2015
- Intermolecular
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR REMOVING A NATIVE OXIDE LAYER FROM GERMANIUM SUSBTRATES...
- Publication number 20150093889
- Publication date Apr 2, 2015
- Intermolecular
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR REMOVING A NATIVE OXIDE LAYER FROM GERMANIUM SUSBTRATES...
- Publication number 20150093887
- Publication date Apr 2, 2015
- GLOBALFOUNDRIES, Inc.
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING GROUP III-V SEMICONDUCTOR MATERIALS ON GROUP IV...
- Publication number 20150001587
- Publication date Jan 1, 2015
- GLOBALFOUNDRES Inc.
- Li Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCULAR TRANSMISSION LINE METHODS COMPATIBLE WITH COMBINATORIAL PR...
- Publication number 20140055152
- Publication date Feb 27, 2014
- GLOBALFOUNDRIES, INC.
- Amol Joshi
- G01 - MEASURING TESTING
Information Patent Application
DUAL WORK FUNCTION FINFET STRUCTURES AND METHODS FOR FABRICATING TH...
- Publication number 20140038402
- Publication date Feb 6, 2014
- GLOBALFOUNDRIES INC.
- Andy C. Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETSOI WITH REDUCED EXTENSION RESISTANCE
- Publication number 20130320447
- Publication date Dec 5, 2013
- GLOBALFOUNDERIES Inc.
- Bin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO CONTROL METAL SEMICONDUCTOR MICRO-STRUCTURE
- Publication number 20130267090
- Publication date Oct 10, 2013
- Christian Lavoie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHORT CHANNEL SEMICONDUCTOR DEVICES WITH REDUCED HALO DIFFUSION
- Publication number 20130249000
- Publication date Sep 26, 2013
- GLOBALFOUNDRIES INC.
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USE OF BAND EDGE GATE METALS AS SOURCE DRAIN CONTACTS
- Publication number 20130241007
- Publication date Sep 19, 2013
- International Business Machines Corporation
- Kisik Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Use of Band Edge Gate Metals as Source Drain Contacts
- Publication number 20130241008
- Publication date Sep 19, 2013
- International Business Machines Corporation
- Kisik Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO FORM SILICIDE CONTACT IN TRENCHES
- Publication number 20130187171
- Publication date Jul 25, 2013
- GLOBALFOUNDRIES INC.
- Michael A. GUILLORN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO FORM SILICIDE CONTACT IN TRENCHES
- Publication number 20130189839
- Publication date Jul 25, 2013
- GLOBALFOUNDRIES INC.
- Michael A. GUILLORN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES HAVING STRESSOR REGIONS AND RELATED FABRICATI...
- Publication number 20130153927
- Publication date Jun 20, 2013
- GLOBALFOUNDRIES, Inc.
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET INTEGRATED CIRCUIT WITH UNIFORMLY THIN SILICIDE LAYER AND ME...
- Publication number 20130069124
- Publication date Mar 21, 2013
- International Business Machines Corporation
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICIDATION OF DEVICE CONTACTS USING PRE-AMORPHIZATION IMPLANT OF...
- Publication number 20130049199
- Publication date Feb 28, 2013
- International Business Machines Corporation
- Paul R. Besser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICIDATION OF DEVICE CONTACTS USING PRE-AMORPHIZATION IMPLANT OF...
- Publication number 20130049200
- Publication date Feb 28, 2013
- International Business Machines Corporation
- Paul R. Besser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO FORM UNIFORM SILICIDE BY SELECTIVE IMPLANTATION
- Publication number 20130020705
- Publication date Jan 24, 2013
- GLOBALFOUNDRIES, Inc.
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USE OF EPITAXIAL NI SILICIDE
- Publication number 20130012020
- Publication date Jan 10, 2013
- GLOBALFOUNDRIES INC.
- Marwan H. Khater
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE FILL BY OPTIMIZING ETCH IN SACRIFICIAL GATE PROFILE
- Publication number 20130005128
- Publication date Jan 3, 2013
- GLOBALFOUNDRIES INC.
- Man Fai Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Defect Free Si:C Epitaxial Growth
- Publication number 20120305940
- Publication date Dec 6, 2012
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIGATE STRUCTURE FORMED WITH ELECTROLESS METAL DEPOSITION
- Publication number 20120298965
- Publication date Nov 29, 2012
- GLOBALFOUNDRIES Inc.
- Wilfried Haensch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal-Semiconductor Intermixed Regions
- Publication number 20120295439
- Publication date Nov 22, 2012
- International Business Machines Corporation
- Christian Lavoie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING BARRIER REGIONS WITHIN REGIONS OF INSULATING MA...
- Publication number 20120235237
- Publication date Sep 20, 2012
- GLOBALFOUNDRIES INC.
- Man Fai Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE FABRICATION METHOD FOR IMPROVED ISOLATION REGI...
- Publication number 20120220095
- Publication date Aug 30, 2012
- GLOBALFOUNDRIES INC.
- Man Fai Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal-Semiconductor Intermixed Regions
- Publication number 20120190192
- Publication date Jul 26, 2012
- International Business Machines Corporation
- Christian Lavoie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO CONTROL METAL SEMICONDUCTOR MICRO-STRUCTURE
- Publication number 20120181697
- Publication date Jul 19, 2012
- GLOBALFOUNDRIES INC.
- Christian Lavoie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIGATE STRUCTURE FORMED WITH ELECTROLESS METAL DEPOSITION
- Publication number 20120132989
- Publication date May 31, 2012
- GLOBALFOUNDRIES Inc.
- Wilfried Haensch
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Methods of forming group III-V semiconductor materials on group IV...

Multigate structure formed with electroless metal deposition

Method to form silicide contact in trenches

Semiconductor device fabrication method for improved isolation regi...

Method to control metal semiconductor micro-structure

Dual work function FinFET structures and methods for fabricating th...

Shallow trench isolation extension

Multigate structure formed with electroless metal deposition

Circular transmission line methods compatible with combinatorial pr...

Metal gate fill by optimizing etch in sacrificial gate profile

Use of band edge gate metals as source drain contacts

Methods for forming barrier regions within regions of insulating ma...

Semiconductor devices having stressor regions and related fabricati...

Method of fabricating an epitaxial Ni silicide film

MOSFET integrated circuit with uniformly thin silicide layer and me...

ETSOI with reduced extension resistance

Method to form uniform silicide by selective implantation

SOI schottky source/drain device structure to control encroachment...

Method to control metal semiconductor micro-structure

Short channel semiconductor devices with reduced halo diffusion

Use of epitaxial Ni silicide

Silicide contact formation

Semiconductor devices having stressor regions and related fabricati...

Semiconductor transistor device structure with back side source/dra...

Semiconductor device with reduced junction leakage and an associate...

eFUSE enablement with thin polysilicon or amorphous-silicon gate-st...

Semiconductor transistor device structure with back side gate conta...

Metal-semiconductor intermixed regions

Methods of forming silicides of different thicknesses on different...

Methods for forming barrier regions within regions of insulating ma...

Patents Applicationslast 30 patents

ETSOI WITH REDUCED EXTENSION RESISTANCE

Metal-insulator-semiconductor (MIS) contact with controlled defect...

METHODS FOR DEPOSITING AN ALUMINUM OXIDE LAYER OVER GERMANIUM SUSBT...

METHODS FOR REMOVING A NATIVE OXIDE LAYER FROM GERMANIUM SUSBTRATES...

METHODS FOR REMOVING A NATIVE OXIDE LAYER FROM GERMANIUM SUSBTRATES...

METHODS OF FORMING GROUP III-V SEMICONDUCTOR MATERIALS ON GROUP IV...

CIRCULAR TRANSMISSION LINE METHODS COMPATIBLE WITH COMBINATORIAL PR...

DUAL WORK FUNCTION FINFET STRUCTURES AND METHODS FOR FABRICATING TH...

ETSOI WITH REDUCED EXTENSION RESISTANCE

METHOD TO CONTROL METAL SEMICONDUCTOR MICRO-STRUCTURE

SHORT CHANNEL SEMICONDUCTOR DEVICES WITH REDUCED HALO DIFFUSION

USE OF BAND EDGE GATE METALS AS SOURCE DRAIN CONTACTS

Use of Band Edge Gate Metals as Source Drain Contacts

METHOD TO FORM SILICIDE CONTACT IN TRENCHES

METHOD TO FORM SILICIDE CONTACT IN TRENCHES

SEMICONDUCTOR DEVICES HAVING STRESSOR REGIONS AND RELATED FABRICATI...

MOSFET INTEGRATED CIRCUIT WITH UNIFORMLY THIN SILICIDE LAYER AND ME...

SILICIDATION OF DEVICE CONTACTS USING PRE-AMORPHIZATION IMPLANT OF...

SILICIDATION OF DEVICE CONTACTS USING PRE-AMORPHIZATION IMPLANT OF...

METHOD TO FORM UNIFORM SILICIDE BY SELECTIVE IMPLANTATION

USE OF EPITAXIAL NI SILICIDE

METAL GATE FILL BY OPTIMIZING ETCH IN SACRIFICIAL GATE PROFILE

Defect Free Si:C Epitaxial Growth

MULTIGATE STRUCTURE FORMED WITH ELECTROLESS METAL DEPOSITION

Metal-Semiconductor Intermixed Regions

METHODS FOR FORMING BARRIER REGIONS WITHIN REGIONS OF INSULATING MA...

SEMICONDUCTOR DEVICE FABRICATION METHOD FOR IMPROVED ISOLATION REGI...

Metal-Semiconductor Intermixed Regions

METHOD TO CONTROL METAL SEMICONDUCTOR MICRO-STRUCTURE

MULTIGATE STRUCTURE FORMED WITH ELECTROLESS METAL DEPOSITION