Bor-Yen Mao

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Richardson, TX, US

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Patents Grantslast 30 patents

Information Patent Grant
Epitaxial process for silicon on insulator structure
- Patent number 4,902,642
- Issue date Feb 20, 1990
- Texas Instruments, Incorporated
- Bor-Yen Mao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dram cell and method
- Patent number 4,864,375
- Issue date Sep 5, 1989
- Texas Instruments Incorporated
- Clarence W. Teng
- H01 - BASIC ELECTRIC ELEMENTS