Bruce D. Marchant

Person

Murray, UT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods related to power semiconductor devices with thick bottom ox...
- Patent number 8,936,985
- Issue date Jan 20, 2015
- Fairchild Semiconductor Corporation
- Ashok Challa
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Trench-gate field effect transistor
- Patent number 8,884,365
- Issue date Nov 11, 2014
- Fairchild Semiconductor Corporation
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a dual-trench field effect transistor
- Patent number 8,829,641
- Issue date Sep 9, 2014
- Fairchild Semiconductor Corporation
- Bruce D. Marchant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a topside contact to a backside terminal of a sem...
- Patent number 8,536,042
- Issue date Sep 17, 2013
- Fairchild Semiconductor Corporation
- John T. Andrews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS with self aligned vertical LDD backside drain
- Patent number 8,450,177
- Issue date May 28, 2013
- Fairchild Semiconductor Corporation
- Bruce D. Marchant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for forming trench-gate field effect transisto...
- Patent number 8,441,069
- Issue date May 14, 2013
- Fairchild Semiconductor Corporation
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of making power semiconductor devices with thick bottom oxi...
- Patent number 8,143,124
- Issue date Mar 27, 2012
- Fairchild Semiconductor Corporation
- Ashok Challa
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Method of forming trench-gate field effect transistors
- Patent number 8,043,913
- Issue date Oct 25, 2011
- Fairchild Semiconductor Corporation
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral drain MOSFET with improved clamping voltage control
- Patent number 7,998,819
- Issue date Aug 16, 2011
- Fairchild Semiconductor Corporation
- Bruce D. Marchant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS with self aligned vertical LDD backside drain
- Patent number 7,936,007
- Issue date May 3, 2011
- Fairchild Semiconductor Corporation
- Bruce D. Marchant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-gate field effect transistor with channel enhancement region...
- Patent number 7,923,776
- Issue date Apr 12, 2011
- Fairchild Semiconductor Corporation
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming active and gate runner trenches
- Patent number 7,902,071
- Issue date Mar 8, 2011
- Fairchild Semiconductor Corporation
- Bruce Douglas Marchant
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Structure and method of forming a topside contact to a backside ter...
- Patent number 7,884,390
- Issue date Feb 8, 2011
- Fairchild Semiconductor Corporation
- John T. Andrews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral drain MOSFET with improved clamping voltage control
- Patent number 7,781,835
- Issue date Aug 24, 2010
- Fairchild Semiconductor Corporation
- Bruce D. Marchant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power trench gate FET with active gate trenches that are contiguous...
- Patent number 7,772,642
- Issue date Aug 10, 2010
- Fairchild Semiconductor Corporation
- Bruce Douglas Marchant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming high density trench FET with integrated Schottky...
- Patent number 7,713,822
- Issue date May 11, 2010
- Fairchild Semiconductor Corporation
- Paul Thorup
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-gate field effect transistors and methods of forming the same
- Patent number 7,504,303
- Issue date Mar 17, 2009
- Fairchild Semiconductor Corporation
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming trench gate FETs with reduced gate to drain charge
- Patent number 7,485,532
- Issue date Feb 3, 2009
- Fairchild Semiconductor Corporation
- Bruce D. Marchant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-gated FET for power device with active gate trenches and gat...
- Patent number 7,449,354
- Issue date Nov 11, 2008
- Fairchild Semiconductor Corporation
- Bruce Douglas Marchant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density trench FET with integrated Schottky diode and method o...
- Patent number 7,446,374
- Issue date Nov 4, 2008
- Fairchild Semiconductor Corporation
- Paul Thorup
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench gate FETs with reduced gate to drain charge
- Patent number 7,382,019
- Issue date Jun 3, 2008
- Fairchild Semiconductor Corporation
- Bruce D. Marchant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned trench MOSFETs and methods for making the same
- Patent number 7,078,296
- Issue date Jul 18, 2006
- Fairchild Semiconductor Corporation
- Duc Chau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a field effect transistor having a lateral deplet...
- Patent number 6,818,513
- Issue date Nov 16, 2004
- Fairchild Semiconductor Corporation
- Bruce D. Marchant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having a lateral depletion structure
- Patent number 6,713,813
- Issue date Mar 30, 2004
- Fairchild Semiconductor Corporation
- Bruce D. Marchant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate and method of making same
- Patent number 6,033,489
- Issue date Mar 7, 2000
- Fairchild Semiconductor Corp.
- Bruce Douglas Marchant
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STRUCTURE AND METHOD FOR FORMING TRENCH-GATE FIELD EFFECT TRANSISTOR
- Publication number 20130248991
- Publication date Sep 26, 2013
- Fairchild Semiconductor Corporation
- Hamza YILMAZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF MAKING POWER SEMICONDUCTOR DEVICES WITH THICK BOTTOM OXI...
- Publication number 20120220091
- Publication date Aug 30, 2012
- Ashok Challa
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Trench-Gate Field Effect Transistors and Methods of Forming the Same
- Publication number 20120104490
- Publication date May 3, 2012
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming Shielded Gate Power Transistor Utilizing Chemical...
- Publication number 20120058615
- Publication date Mar 8, 2012
- Bruce Douglas Marchant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming Trench-Gate Field Effect Transistors
- Publication number 20110177662
- Publication date Jul 21, 2011
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS WITH SELF ALIGNED VERTICAL LDD BACKSIDE DRAIN
- Publication number 20110171798
- Publication date Jul 14, 2011
- BRUCE D. MARCHANT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming a Topside Contact to a Backside Terminal of a Sem...
- Publication number 20110097894
- Publication date Apr 28, 2011
- John T. Andrews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A DUAL-TRENCH FIELD EFFECT TRANSISTOR
- Publication number 20110014764
- Publication date Jan 20, 2011
- Bruce D. Marchant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL DRAIN MOSFET WITH IMPROVED CLAMPING VOLTAGE CONTROL
- Publication number 20100317168
- Publication date Dec 16, 2010
- Bruce D. Marchant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming Active and Gate Runner Trenches
- Publication number 20100311216
- Publication date Dec 9, 2010
- Bruce Douglas Marchant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS WITH SELF ALIGNED VERTICAL LDD BACKSIDE DRAIN
- Publication number 20100264490
- Publication date Oct 21, 2010
- BRUCE D. MARCHANT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH-GATE FIELD EFFECT TRANSISTOR WITH CHANNEL ENHANCEMENT REGION...
- Publication number 20100258862
- Publication date Oct 14, 2010
- Fairchild Semiconductor Corporation
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL DRAIN MOSFET WITH IMPROVED CLAMPING VOLTAGE CONTROL
- Publication number 20100176452
- Publication date Jul 15, 2010
- Bruce D. Marchant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench-Gate Field Effect Transistors and Methods of Forming the Same
- Publication number 20090230465
- Publication date Sep 17, 2009
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and Method of Forming a Topside Contact to a Backside Ter...
- Publication number 20090173993
- Publication date Jul 9, 2009
- John T. Andrews
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming High Density Trench FET with Integrated Schottky...
- Publication number 20090035900
- Publication date Feb 5, 2009
- Paul Thorup
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming Power Device Utilizing Chemical Mechanical Planar...
- Publication number 20090020810
- Publication date Jan 22, 2009
- Bruce Douglas Marchant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming Trench Gate FETs with Reduced Gate to Drain Charge
- Publication number 20080166846
- Publication date Jul 10, 2008
- Fairchild Semiconductor Corporation
- Bruce D. Marchant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trenched Shield Gate Power Semiconductor Devices and Methods of Man...
- Publication number 20080150020
- Publication date Jun 26, 2008
- Ashok Challa
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Methods of Making Power Semiconductor Devices with Thick Bottom Oxi...
- Publication number 20080138953
- Publication date Jun 12, 2008
- Ashok Challa
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Power Semiconductor Devices Having Termination Structures and Metho...
- Publication number 20080135931
- Publication date Jun 12, 2008
- Ashok Challa
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
High density trench FET with integrated Schottky diode and method o...
- Publication number 20070221952
- Publication date Sep 27, 2007
- Paul Thorup
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power device utilizing chemical mechanical planarization
- Publication number 20070155104
- Publication date Jul 5, 2007
- Bruce Douglas Marchant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench-gate field effect transistors and methods of forming the same
- Publication number 20060273386
- Publication date Dec 7, 2006
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and method for forming trench gate FETs with reduced gate...
- Publication number 20060237781
- Publication date Oct 26, 2006
- Bruce D. Marchant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power semiconductor devices and methods of manufacture
- Publication number 20060214221
- Publication date Sep 28, 2006
- Ashok Challa
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Power semiconductor devices and methods of manufacture
- Publication number 20060214222
- Publication date Sep 28, 2006
- Ashok Challa
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Power semiconductor devices and methods of manufacture
- Publication number 20050167742
- Publication date Aug 4, 2005
- Fairchild Semiconductor Corp.
- Ashok Challa
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Structure and method of forming a dual-trench field effect transistor
- Publication number 20050029618
- Publication date Feb 10, 2005
- Bruce D. Marchant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-aligned trench mosfets and methods for making the same
- Publication number 20030132480
- Publication date Jul 17, 2003
- Duc Chau
- H01 - BASIC ELECTRIC ELEMENTS

Bruce D. Marchant

Person

Patents Grantslast 30 patents

Methods related to power semiconductor devices with thick bottom ox...

Trench-gate field effect transistor

Method of forming a dual-trench field effect transistor

Method of forming a topside contact to a backside terminal of a sem...

LDMOS with self aligned vertical LDD backside drain

Structure and method for forming trench-gate field effect transisto...

Methods of making power semiconductor devices with thick bottom oxi...

Method of forming trench-gate field effect transistors

Lateral drain MOSFET with improved clamping voltage control

LDMOS with self aligned vertical LDD backside drain

Trench-gate field effect transistor with channel enhancement region...

Method for forming active and gate runner trenches

Structure and method of forming a topside contact to a backside ter...

Lateral drain MOSFET with improved clamping voltage control

Power trench gate FET with active gate trenches that are contiguous...

Method of forming high density trench FET with integrated Schottky...

Trench-gate field effect transistors and methods of forming the same

Method of forming trench gate FETs with reduced gate to drain charge

Trench-gated FET for power device with active gate trenches and gat...

High density trench FET with integrated Schottky diode and method o...

Trench gate FETs with reduced gate to drain charge

Self-aligned trench MOSFETs and methods for making the same

Method of forming a field effect transistor having a lateral deplet...

Field effect transistor having a lateral depletion structure

Semiconductor substrate and method of making same

Patents Applicationslast 30 patents

STRUCTURE AND METHOD FOR FORMING TRENCH-GATE FIELD EFFECT TRANSISTOR

METHODS OF MAKING POWER SEMICONDUCTOR DEVICES WITH THICK BOTTOM OXI...

Trench-Gate Field Effect Transistors and Methods of Forming the Same

Method of Forming Shielded Gate Power Transistor Utilizing Chemical...

Method of Forming Trench-Gate Field Effect Transistors

LDMOS WITH SELF ALIGNED VERTICAL LDD BACKSIDE DRAIN

Method of Forming a Topside Contact to a Backside Terminal of a Sem...

METHOD OF FORMING A DUAL-TRENCH FIELD EFFECT TRANSISTOR

LATERAL DRAIN MOSFET WITH IMPROVED CLAMPING VOLTAGE CONTROL

Method for Forming Active and Gate Runner Trenches

LDMOS WITH SELF ALIGNED VERTICAL LDD BACKSIDE DRAIN

TRENCH-GATE FIELD EFFECT TRANSISTOR WITH CHANNEL ENHANCEMENT REGION...

LATERAL DRAIN MOSFET WITH IMPROVED CLAMPING VOLTAGE CONTROL

Trench-Gate Field Effect Transistors and Methods of Forming the Same

Structure and Method of Forming a Topside Contact to a Backside Ter...

Method of Forming High Density Trench FET with Integrated Schottky...

Method of Forming Power Device Utilizing Chemical Mechanical Planar...

Method of Forming Trench Gate FETs with Reduced Gate to Drain Charge

Trenched Shield Gate Power Semiconductor Devices and Methods of Man...

Methods of Making Power Semiconductor Devices with Thick Bottom Oxi...

Power Semiconductor Devices Having Termination Structures and Metho...

High density trench FET with integrated Schottky diode and method o...

Power device utilizing chemical mechanical planarization

Trench-gate field effect transistors and methods of forming the same

Structure and method for forming trench gate FETs with reduced gate...

Power semiconductor devices and methods of manufacture

Power semiconductor devices and methods of manufacture

Power semiconductor devices and methods of manufacture

Structure and method of forming a dual-trench field effect transistor

Self-aligned trench mosfets and methods for making the same