Byoung Hun Lee

Person

Austin, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Dual metal gates using one metal to alter work function of another...
- Patent number 8,236,686
- Issue date Aug 7, 2012
- International Business Machines Corporation
- Byoung H. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS devices with different metals in gate electrodes using spin on...
- Patent number 7,943,453
- Issue date May 17, 2011
- International Business Machines Corporation
- Bernd Ernst Eduard Kastenmeier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for measuring capacitance
- Patent number 7,548,067
- Issue date Jun 16, 2009
- Sematech, Inc.
- Kin P. Cheung
- G01 - MEASURING TESTING
Information Patent Grant
Forming gate oxides having multiple thicknesses
- Patent number 7,160,771
- Issue date Jan 9, 2007
- International Business Machines Corporation
- Anthony I-Chih Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS device on ultrathin SOI with a deposited raised source/drain,...
- Patent number 6,891,228
- Issue date May 10, 2005
- International Business Machines Corporation
- Heemyong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS device on ultrathin SOI with a deposited raised source/drain,...
- Patent number 6,828,630
- Issue date Dec 7, 2004
- International Business Machines Corporation
- Heemyong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Triple layer hard mask for gate patterning to fabricate scaled CMOS...
- Patent number 6,800,530
- Issue date Oct 5, 2004
- International Business Machines Corporation
- Byoung Hun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming asymmetric extension mosfet using a drain side sp...
- Patent number 6,746,924
- Issue date Jun 8, 2004
- International Business Machines Corporation
- Byoung H. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of dual workfunction metal gate CMOS devices
- Patent number 6,653,698
- Issue date Nov 25, 2003
- International Business Machines Corporation
- Byoung H. Lee
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DUAL METAL GATES USING ONE METAL TO ALTER WORK FUNCTION OF ANOTHER...
- Publication number 20120256270
- Publication date Oct 11, 2012
- International Business Machines Corporation
- Byoung H. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL METAL GATES USING ONE METAL TO ALTER WORK FUNCTION OF ANOTHER...
- Publication number 20090294867
- Publication date Dec 3, 2009
- Byoung H. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS DEVICES WITH DIFFERENT METALS IN GATE ELECTRODES USING SPIN ON...
- Publication number 20090159991
- Publication date Jun 25, 2009
- Bernd Ernst Eduard Kastenmeier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET WITH METAL GATE ELECTRODE
- Publication number 20090039441
- Publication date Feb 12, 2009
- Hongfa Luna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETERO-BONDED SEMICONDUCTOR-ON-INSULATOR SUBSTRATE WITH AN UNPINNIN...
- Publication number 20080251814
- Publication date Oct 16, 2008
- International Business Machines Corporation
- Byoung H. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Measuring Capacitance
- Publication number 20080100283
- Publication date May 1, 2008
- Kin P. Cheung
- G01 - MEASURING TESTING
Information Patent Application
Methods for dual metal gate CMOS integration
- Publication number 20070048920
- Publication date Mar 1, 2007
- SEMATECH
- Seung-Chul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming gate oxides having multiple thicknesses
- Publication number 20050118764
- Publication date Jun 2, 2005
- Anthony I-Chih Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO PRODUCE TRANSISTOR HAVING REDUCED GATE HEIGHT
- Publication number 20050048732
- Publication date Mar 3, 2005
- International Business Machines Corporation
- Heemyoung Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS device on ultrathin SOI with a deposited raised source/drain,...
- Publication number 20050040465
- Publication date Feb 24, 2005
- Heemyong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Triple layer hard mask for gate patterning to fabricate scaled CMOS...
- Publication number 20040259303
- Publication date Dec 23, 2004
- International Business Machines Corporation
- Byoung Hun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRIPLE LAYER HARD MASK FOR GATE PATTERNING TO FABRICATE SCALED CMOS...
- Publication number 20040137672
- Publication date Jul 15, 2004
- International Business Machines Corporation
- Byoung Hun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS device on ultrathin SOI with a deposited raised source/drain,...
- Publication number 20040129979
- Publication date Jul 8, 2004
- International Business Machines Corporation
- Heemyong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integration of dual workfunction metal gate CMOS devices
- Publication number 20030119292
- Publication date Jun 26, 2003
- International Business Machines Corporation
- Byoung H. Lee
- H01 - BASIC ELECTRIC ELEMENTS

Byoung Hun Lee

Person

Patents Grantslast 30 patents

Dual metal gates using one metal to alter work function of another...

CMOS devices with different metals in gate electrodes using spin on...

Methods for measuring capacitance

Forming gate oxides having multiple thicknesses

CMOS device on ultrathin SOI with a deposited raised source/drain,...

CMOS device on ultrathin SOI with a deposited raised source/drain,...

Triple layer hard mask for gate patterning to fabricate scaled CMOS...

Method of forming asymmetric extension mosfet using a drain side sp...

Integration of dual workfunction metal gate CMOS devices

Patents Applicationslast 30 patents

DUAL METAL GATES USING ONE METAL TO ALTER WORK FUNCTION OF ANOTHER...

DUAL METAL GATES USING ONE METAL TO ALTER WORK FUNCTION OF ANOTHER...

CMOS DEVICES WITH DIFFERENT METALS IN GATE ELECTRODES USING SPIN ON...

MOSFET WITH METAL GATE ELECTRODE

HETERO-BONDED SEMICONDUCTOR-ON-INSULATOR SUBSTRATE WITH AN UNPINNIN...

Methods for Measuring Capacitance

Methods for dual metal gate CMOS integration

Forming gate oxides having multiple thicknesses

METHOD TO PRODUCE TRANSISTOR HAVING REDUCED GATE HEIGHT

CMOS device on ultrathin SOI with a deposited raised source/drain,...

Triple layer hard mask for gate patterning to fabricate scaled CMOS...

TRIPLE LAYER HARD MASK FOR GATE PATTERNING TO FABRICATE SCALED CMOS...

CMOS device on ultrathin SOI with a deposited raised source/drain,...

Integration of dual workfunction metal gate CMOS devices