Byoung W. Min

Person

Hopewell Junction, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Selective gate oxide properties adjustment using fluorine
- Patent number 9,299,856
- Issue date Mar 29, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Byoung W. Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated split gate non-volatile memory cell and logic structure
- Patent number 9,082,650
- Issue date Jul 14, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Asanga H. Perera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement-gate-compatible programmable electrical antifuse
- Patent number 9,059,006
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Satya N. Chakravarti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective gate oxide properties adjustment using fluorine
- Patent number 8,975,143
- Issue date Mar 10, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Byoung W. Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory (NVM) and high-K and metal gate integration usi...
- Patent number 8,901,632
- Issue date Dec 2, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Asanga H. Perera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple device types including an inverted-T channel transistor an...
- Patent number 8,643,066
- Issue date Feb 4, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Byoung L. Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Effective eFuse structure
- Patent number 8,294,239
- Issue date Oct 23, 2012
- FREESCALE SEMICONDUCTOR, INC.
- Byoung W. Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement-gate-compatible programmable electrical antifuse
- Patent number 8,237,457
- Issue date Aug 7, 2012
- International Business Machines Corporation
- Satya N. Chakravarti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit using FinFETs and having a static random access...
- Patent number 8,088,657
- Issue date Jan 3, 2012
- FREESCALE SEMICONDUCTOR, INC.
- James D. Burnett
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI semiconductor device with body contact and method thereof
- Patent number 7,927,934
- Issue date Apr 19, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Byoung W. Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a transistor having multiple types of Schottky ju...
- Patent number 7,858,505
- Issue date Dec 28, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Byoung W. Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Efficient body contact field effect transistor with reduced body re...
- Patent number 7,820,530
- Issue date Oct 26, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Byoung W. Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit using FinFETs and having a static random access...
- Patent number 7,754,560
- Issue date Jul 13, 2010
- FREESCALE SEMICONDUCTOR, INC.
- James D. Burnett
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming an electronic device including a fin-type struc...
- Patent number 7,709,303
- Issue date May 4, 2010
- FREESCALE SEMICONDUCTOR, INC.
- James D. Burnett
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with integrated resistive element and method o...
- Patent number 7,648,884
- Issue date Jan 19, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Byoung W. Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Area diode formation in SOI application
- Patent number 7,517,742
- Issue date Apr 14, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Byoung W. Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple device types including an inverted-T channel transistor an...
- Patent number 7,452,768
- Issue date Nov 18, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Byoung W. Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methodology to reduce SOI floating-body effect
- Patent number 7,410,876
- Issue date Aug 12, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Byoung W. Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical diode formation in SOI application
- Patent number 7,186,596
- Issue date Mar 6, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Byoung W. Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device and structure thereof
- Patent number 7,144,784
- Issue date Dec 5, 2006
- FREESCALE SEMICONDUCTOR, INC.
- Byoung W. Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a transistor and a capacitor having...
- Patent number 7,122,421
- Issue date Oct 17, 2006
- FREESCALE SEMICONDUCTOR, INC.
- Hector Sanchez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Separately strained N-channel and P-channel transistors
- Patent number 7,041,576
- Issue date May 9, 2006
- FREESCALE SEMICONDUCTOR, INC.
- Scott K. Pozder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for converting a planar transistor design to a vertical doub...
- Patent number 7,013,447
- Issue date Mar 14, 2006
- FREESCALE SEMICONDUCTOR, INC.
- Leo Mathew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having electrical contact from opposite sides...
- Patent number 6,921,961
- Issue date Jul 26, 2005
- FREESCALE SEMICONDUCTOR, INC.
- Hector Sanchez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate contact in SOI and method therefor
- Patent number 6,844,224
- Issue date Jan 18, 2005
- FREESCALE SEMICONDUCTOR, INC.
- Byoung W. Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a semiconductor device having electrical contact...
- Patent number 6,838,332
- Issue date Jan 4, 2005
- FREESCALE SEMICONDUCTOR, INC.
- Hector Sanchez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Body-tied silicon on insulator semiconductor device and method ther...
- Patent number 6,724,048
- Issue date Apr 20, 2004
- Motorola, Inc.
- Byoung W. Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming body-tied silicon on insulator semiconductor device
- Patent number 6,620,656
- Issue date Sep 16, 2003
- Motorola, Inc.
- Byoung W. Min
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELECTIVE GATE OXIDE PROPERTIES ADJUSTMENT USING FLUORINE
- Publication number 20150179821
- Publication date Jun 25, 2015
- FREESCALE SEMICONDUCTOR, INC.
- BYOUNG W. MIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED SPLIT GATE NON-VOLATILE MEMORY CELL AND LOGIC STRUCTURE
- Publication number 20150054049
- Publication date Feb 26, 2015
- Asanga H. PERERA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE GATE OXIDE PROPERTIES ADJUSTMENT USING FLUORINE
- Publication number 20140319596
- Publication date Oct 30, 2014
- Byoung W. Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT-GATE-COMPATIBLE PROGRAMMABLE ELECTRICAL ANTIFUSE
- Publication number 20120249160
- Publication date Oct 4, 2012
- FREESCALE SEMICONDUCTOR, INC.
- Satya N. Chakravarti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT-GATE-COMPATIBLE PROGRAMMABLE ELECTRICAL ANTIFUSE
- Publication number 20110012629
- Publication date Jan 20, 2011
- International Business Machines Corporation
- Satya N. Chakravarti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT USING FINFETS AND HAVING A STATIC RANDOM ACCESS...
- Publication number 20100230762
- Publication date Sep 16, 2010
- FREESCALE SEMICONDUCTOR, INC.
- James D. Burnett
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Efficient Body Contact Field Effect Transistor with Reduced Body Re...
- Publication number 20100081239
- Publication date Apr 1, 2010
- Byoung W. Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
eFuse and Resistor Structures and Method for Forming Same in Active...
- Publication number 20100078727
- Publication date Apr 1, 2010
- Byoung W. Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EFFECTIVE EFUSE STRUCTURE
- Publication number 20100072571
- Publication date Mar 25, 2010
- Byoung W. Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE DEVICE TYPES INCLUDING AN INVERTED-T CHANNEL TRANSISTOR AN...
- Publication number 20090039418
- Publication date Feb 12, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Byoung W. Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A TRANSISTOR HAVING MULTIPLE TYPES OF SCHOTTKY JU...
- Publication number 20080274601
- Publication date Nov 6, 2008
- Byoung W. Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI SEMICONDUCTOR DEVICE WITH BODY CONTACT AND METHOD THEREOF
- Publication number 20080254586
- Publication date Oct 16, 2008
- Byoung W. Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH INTEGRATED RESISTIVE ELEMENT AND METHOD O...
- Publication number 20080206939
- Publication date Aug 28, 2008
- Byoung W. Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for forming an electronic device including a fin-type struc...
- Publication number 20070161171
- Publication date Jul 12, 2007
- FREESCALE SEMICONDUCTOR, INC.
- James D. Burnett
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated circuit using FinFETs and having a static random access...
- Publication number 20070158730
- Publication date Jul 12, 2007
- James D. Burnett
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multiple device types including an inverted-T channel transistor an...
- Publication number 20070093054
- Publication date Apr 26, 2007
- Byoung W. Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical diode formation in SOI application
- Publication number 20060284260
- Publication date Dec 21, 2006
- Freescale Semiconductor, Inc.
- Byoung W. Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Area diode formation in SOI application
- Publication number 20060284278
- Publication date Dec 21, 2006
- Freescale Semiconductor, Inc.
- Byoung W. Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a semiconductor device and structure thereof
- Publication number 20060024893
- Publication date Feb 2, 2006
- Byoung W. Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Backside body contact
- Publication number 20050280088
- Publication date Dec 22, 2005
- Byoung W. Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Separately strained N-channel and P-channel transistors
- Publication number 20050275017
- Publication date Dec 15, 2005
- Scott K. Pozder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having an aligned transistor and capacitive el...
- Publication number 20050167782
- Publication date Aug 4, 2005
- Hector Sanchez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having electrical contact from opposite sides
- Publication number 20050042867
- Publication date Feb 24, 2005
- Hector Sanchez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for converting a planar transistor design to a vertical doub...
- Publication number 20050020015
- Publication date Jan 27, 2005
- Leo Mathew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Body-tied silicon on insulator semiconductor device and method ther...
- Publication number 20030211663
- Publication date Nov 13, 2003
- Byoung W. Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BODY-TIED SILICON ON INSULATOR SEMICONDUCTOR DEVICE AND METHOD THER...
- Publication number 20030113959
- Publication date Jun 19, 2003
- Byoung W. Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Substrate contact in SOI and method therefor
- Publication number 20030089948
- Publication date May 15, 2003
- Byoung W. Min
- H01 - BASIC ELECTRIC ELEMENTS

Byoung W. Min

Person

Patents Grantslast 30 patents

Selective gate oxide properties adjustment using fluorine

Integrated split gate non-volatile memory cell and logic structure

Replacement-gate-compatible programmable electrical antifuse

Selective gate oxide properties adjustment using fluorine

Non-volatile memory (NVM) and high-K and metal gate integration usi...

Multiple device types including an inverted-T channel transistor an...

Effective eFuse structure

Replacement-gate-compatible programmable electrical antifuse

Integrated circuit using FinFETs and having a static random access...

SOI semiconductor device with body contact and method thereof

Method of forming a transistor having multiple types of Schottky ju...

Efficient body contact field effect transistor with reduced body re...

Integrated circuit using FinFETs and having a static random access...

Process for forming an electronic device including a fin-type struc...

Semiconductor device with integrated resistive element and method o...

Area diode formation in SOI application

Multiple device types including an inverted-T channel transistor an...

Methodology to reduce SOI floating-body effect

Vertical diode formation in SOI application

Method of forming a semiconductor device and structure thereof

Semiconductor device including a transistor and a capacitor having...

Separately strained N-channel and P-channel transistors

Method for converting a planar transistor design to a vertical doub...

Semiconductor device having electrical contact from opposite sides...

Substrate contact in SOI and method therefor

Method for forming a semiconductor device having electrical contact...

Body-tied silicon on insulator semiconductor device and method ther...

Method of forming body-tied silicon on insulator semiconductor device

Patents Applicationslast 30 patents

SELECTIVE GATE OXIDE PROPERTIES ADJUSTMENT USING FLUORINE

INTEGRATED SPLIT GATE NON-VOLATILE MEMORY CELL AND LOGIC STRUCTURE

SELECTIVE GATE OXIDE PROPERTIES ADJUSTMENT USING FLUORINE

REPLACEMENT-GATE-COMPATIBLE PROGRAMMABLE ELECTRICAL ANTIFUSE

REPLACEMENT-GATE-COMPATIBLE PROGRAMMABLE ELECTRICAL ANTIFUSE

INTEGRATED CIRCUIT USING FINFETS AND HAVING A STATIC RANDOM ACCESS...

Efficient Body Contact Field Effect Transistor with Reduced Body Re...

eFuse and Resistor Structures and Method for Forming Same in Active...

EFFECTIVE EFUSE STRUCTURE

MULTIPLE DEVICE TYPES INCLUDING AN INVERTED-T CHANNEL TRANSISTOR AN...

METHOD OF FORMING A TRANSISTOR HAVING MULTIPLE TYPES OF SCHOTTKY JU...

SOI SEMICONDUCTOR DEVICE WITH BODY CONTACT AND METHOD THEREOF

SEMICONDUCTOR DEVICE WITH INTEGRATED RESISTIVE ELEMENT AND METHOD O...

Process for forming an electronic device including a fin-type struc...

Integrated circuit using FinFETs and having a static random access...

Multiple device types including an inverted-T channel transistor an...

Vertical diode formation in SOI application

Area diode formation in SOI application

Method of forming a semiconductor device and structure thereof

Backside body contact

Separately strained N-channel and P-channel transistors

Semiconductor device having an aligned transistor and capacitive el...

Semiconductor device having electrical contact from opposite sides

Method for converting a planar transistor design to a vertical doub...

Body-tied silicon on insulator semiconductor device and method ther...

BODY-TIED SILICON ON INSULATOR SEMICONDUCTOR DEVICE AND METHOD THER...

Substrate contact in SOI and method therefor