Carl John Radens

Person

LaGrangeville, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Forming N-type and P-type horizontal gate-all-around devices
- Patent number 12,113,067
- Issue date Oct 8, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures with backside gate contacts
- Patent number 12,087,691
- Issue date Sep 10, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuit design watermarking
- Patent number 11,977,614
- Issue date May 7, 2024
- International Business Machines Corporation
- Carl Radens
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Phase change memory cell with an airgap to allow for the expansion...
- Patent number 11,963,469
- Issue date Apr 16, 2024
- International Business Machines Corporation
- Kangguo Cheng
- G11 - INFORMATION STORAGE
Information Patent Grant
Stacked FET SRAM
- Patent number 11,895,818
- Issue date Feb 6, 2024
- International Business Machines Corporation
- Ruilong Xie
- G11 - INFORMATION STORAGE
Information Patent Grant
Nanosheet IC device with single diffusion break
- Patent number 11,791,199
- Issue date Oct 17, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Random number generator using cross-coupled ring oscillators
- Patent number 11,742,836
- Issue date Aug 29, 2023
- International Business Machines Corporation
- Kangguo Cheng
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Hybrid non-volatile memory cell
- Patent number 11,696,518
- Issue date Jul 4, 2023
- International Business Machines Corporation
- Kangguo Cheng
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory cell with an airgap to allow for the expansion...
- Patent number 11,690,305
- Issue date Jun 27, 2023
- International Business Machines Corporation
- Kangguo Cheng
- G11 - INFORMATION STORAGE
Information Patent Grant
Vertical phase change bridge memory cell
- Patent number 11,683,998
- Issue date Jun 20, 2023
- International Business Machines Corporation
- Juntao Li
Information Patent Grant
Nanosheet transistor with asymmetric gate stack
- Patent number 11,652,156
- Issue date May 16, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Distributed memory-augmented neural network architecture
- Patent number 11,645,206
- Issue date May 9, 2023
- International Business Machines Corporation
- Ahmet Serkan Ozcan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Resistive memory with vertical transport transistor
- Patent number 11,588,104
- Issue date Feb 21, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming self-aligned vias and air-gaps in semiconductor fabrication
- Patent number 11,380,583
- Issue date Jul 5, 2022
- TESSERA LLC
- Lawrence A. Clevenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Statistical design with importance sampling reuse
- Patent number 11,372,701
- Issue date Jun 28, 2022
- International Business Machines Corporation
- Rajiv V. Joshi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Self-aligned via interconnect structures
- Patent number 11,348,832
- Issue date May 31, 2022
- International Business Machines Corporation
- Benjamin C. Backes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement gate cross-couple for static random-access memory scaling
- Patent number 11,349,001
- Issue date May 31, 2022
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned top via scheme
- Patent number 11,322,402
- Issue date May 3, 2022
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet transistor with asymmetric gate stack
- Patent number 11,251,288
- Issue date Feb 15, 2022
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimal placement of data structures in a hybrid memory based infer...
- Patent number 11,175,844
- Issue date Nov 16, 2021
- International Business Machines Corporation
- Ashish Ranjan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Distributed memory-augmented neural network architecture
- Patent number 11,176,043
- Issue date Nov 16, 2021
- International Business Machines Corporation
- Ahmet Serkan Ozcan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Buried local interconnect
- Patent number 11,152,307
- Issue date Oct 19, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned repaired top via
- Patent number 11,107,731
- Issue date Aug 31, 2021
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
On-chip security key with phase change memory
- Patent number 11,081,172
- Issue date Aug 3, 2021
- International Business Machines Corporation
- Kangguo Cheng
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Phase change memory cell with a metal layer
- Patent number 11,038,106
- Issue date Jun 15, 2021
- International Business Machines Corporation
- Carl Radens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal replacement vertical interconnections for buried capacitance
- Patent number 11,024,551
- Issue date Jun 1, 2021
- International Business Machines Corporation
- Hsueh-Chung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with local connection
- Patent number 10,985,063
- Issue date Apr 20, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical gate all-around transistor
- Patent number 10,950,722
- Issue date Mar 16, 2021
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming self-aligned vias and air-gaps in semiconductor fabrication
- Patent number 10,930,553
- Issue date Feb 23, 2021
- Tessera, Inc.
- Lawrence A. Clevenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gate isolation with asymmetric cut placement
- Patent number 10,832,916
- Issue date Nov 10, 2020
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
IRREGULAR-SHAPED POWER RAIL IN CELL POWER DISTRIBUTION
- Publication number 20240321748
- Publication date Sep 26, 2024
- International Business Machines Corporation
- Lawrence A. Clevenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFUSION BREAK STRUCTURE FOR TRANSISTORS
- Publication number 20240204042
- Publication date Jun 20, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED AND NON-STACKED TRANSISTORS WITH DOUBLE-SIDED INTERCONNECTS
- Publication number 20240196586
- Publication date Jun 13, 2024
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SECURE ONE-TIME WAFER IDENTIFICATION IN SPLIT MANUFACTURING
- Publication number 20240170313
- Publication date May 23, 2024
- International Business Machines Corporation
- Carl Radens
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Stacked Layer Memory Suitable for SRAM and Having a Long Cell.
- Publication number 20240172408
- Publication date May 23, 2024
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE PROGRAMMABLE MEMORY
- Publication number 20240164089
- Publication date May 16, 2024
- International Business Machines Corporation
- Albert M. Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE PROGRAMMABLE GATE ARRAY
- Publication number 20240162231
- Publication date May 16, 2024
- International Business Machines Corporation
- Albert M. Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DENSITY STATIC RANDOM-ACCESS MEMORY
- Publication number 20240155822
- Publication date May 9, 2024
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY CELL SIDEWALL HEATER
- Publication number 20240107900
- Publication date Mar 28, 2024
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFERENT DIMENSIONS ACROSS ACTIVE REGION FOR STRONGER VIA TO BACKS...
- Publication number 20240088146
- Publication date Mar 14, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED RANDOM-ACCESS-MEMORY WITH COMPLEMENTARY ADJACENT CELLS
- Publication number 20240081037
- Publication date Mar 7, 2024
- International Business Machines Corporation
- Brent A. Anderson
- G11 - INFORMATION STORAGE
Information Patent Application
LOCAL ENLARGED VIA-TO-BACKSIDE POWER RAIL
- Publication number 20240079316
- Publication date Mar 7, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK SIDE PHASE CHANGE MEMORY
- Publication number 20240074333
- Publication date Feb 29, 2024
- International Business Machines Corporation
- Carl Radens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL PHASE CHANGE MEMORY DEVICE
- Publication number 20240065119
- Publication date Feb 22, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SRAM WITH STAGGERED STACKED FET
- Publication number 20240064951
- Publication date Feb 22, 2024
- International Business Machines Corporation
- Albert M. Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FET SRAM
- Publication number 20240008242
- Publication date Jan 4, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FIELD EFFECT TRANSISTOR CELL WITH CROSS-COUPLING
- Publication number 20230420371
- Publication date Dec 28, 2023
- International Business Machines Corporation
- Carl Radens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FET SRAM
- Publication number 20230345690
- Publication date Oct 26, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SRAM WITH BACKSIDE CROSS-COUPLE
- Publication number 20230345691
- Publication date Oct 26, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET PULL-UP TRANSISTOR IN SRAM
- Publication number 20230320056
- Publication date Oct 5, 2023
- International Business Machines Corporation
- HUIMEI ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY WITH MULTI-LEVEL PROGRAMMING
- Publication number 20230301207
- Publication date Sep 21, 2023
- International Business Machines Corporation
- Ching-Tzu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY CELL WITH AN AIRGAP TO ALLOW FOR THE EXPANSION...
- Publication number 20230284542
- Publication date Sep 7, 2023
- International Business Machines Corporation
- Kangguo Cheng
- G11 - INFORMATION STORAGE
Information Patent Application
HYBRID GATE CUT FOR STACKED TRANSISTORS
- Publication number 20230197814
- Publication date Jun 22, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BRIDGE CELL PHASE CHANGE MEMORY
- Publication number 20230200266
- Publication date Jun 22, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICES WITH A LOW DIELECTRIC CONSTANT
- Publication number 20230197603
- Publication date Jun 22, 2023
- International Business Machines Corporation
- Hsueh-Chung CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LEVEL PROGRAMMING OF PHASE CHANGE MEMORY DEVICE
- Publication number 20230189667
- Publication date Jun 15, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED CROSS-POINT PHASE CHANGE MEMORY
- Publication number 20230180640
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED INPUT OUTPUT AND LOGIC DEVICE FOR NANOSHEET TECHNOLOGY
- Publication number 20230178547
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Maruf Amin BHUIYAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL WITH COMB-SHAPED ELECTRODES
- Publication number 20230133058
- Publication date May 4, 2023
- International Business Machines Corporation
- JUNTAO LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CFET WITH INDEPENDENT GATE CONTROL AND LOW PARASITIC CAPACITANCE
- Publication number 20230125316
- Publication date Apr 27, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS

Carl John Radens

Person

Patents Grantslast 30 patents

Forming N-type and P-type horizontal gate-all-around devices

Semiconductor structures with backside gate contacts

Circuit design watermarking

Phase change memory cell with an airgap to allow for the expansion...

Stacked FET SRAM

Nanosheet IC device with single diffusion break

Random number generator using cross-coupled ring oscillators

Hybrid non-volatile memory cell

Phase change memory cell with an airgap to allow for the expansion...

Vertical phase change bridge memory cell

Nanosheet transistor with asymmetric gate stack

Distributed memory-augmented neural network architecture

Resistive memory with vertical transport transistor

Forming self-aligned vias and air-gaps in semiconductor fabrication

Statistical design with importance sampling reuse

Self-aligned via interconnect structures

Replacement gate cross-couple for static random-access memory scaling

Self-aligned top via scheme

Nanosheet transistor with asymmetric gate stack

Optimal placement of data structures in a hybrid memory based infer...

Distributed memory-augmented neural network architecture

Buried local interconnect

Self-aligned repaired top via

On-chip security key with phase change memory

Phase change memory cell with a metal layer

Metal replacement vertical interconnections for buried capacitance

Semiconductor device with local connection

Vertical gate all-around transistor

Forming self-aligned vias and air-gaps in semiconductor fabrication

Self-aligned gate isolation with asymmetric cut placement

Patents Applicationslast 30 patents

IRREGULAR-SHAPED POWER RAIL IN CELL POWER DISTRIBUTION

DIFFUSION BREAK STRUCTURE FOR TRANSISTORS

STACKED AND NON-STACKED TRANSISTORS WITH DOUBLE-SIDED INTERCONNECTS

SECURE ONE-TIME WAFER IDENTIFICATION IN SPLIT MANUFACTURING

Stacked Layer Memory Suitable for SRAM and Having a Long Cell.

BACKSIDE PROGRAMMABLE MEMORY

BACKSIDE PROGRAMMABLE GATE ARRAY

HIGH DENSITY STATIC RANDOM-ACCESS MEMORY

PHASE CHANGE MEMORY CELL SIDEWALL HEATER

DIFFERENT DIMENSIONS ACROSS ACTIVE REGION FOR STRONGER VIA TO BACKS...

STACKED RANDOM-ACCESS-MEMORY WITH COMPLEMENTARY ADJACENT CELLS

LOCAL ENLARGED VIA-TO-BACKSIDE POWER RAIL

BACK SIDE PHASE CHANGE MEMORY

VERTICAL PHASE CHANGE MEMORY DEVICE

SRAM WITH STAGGERED STACKED FET

STACKED FET SRAM

STACKED FIELD EFFECT TRANSISTOR CELL WITH CROSS-COUPLING

STACKED FET SRAM

SRAM WITH BACKSIDE CROSS-COUPLE

NANOSHEET PULL-UP TRANSISTOR IN SRAM

PHASE CHANGE MEMORY WITH MULTI-LEVEL PROGRAMMING

PHASE CHANGE MEMORY CELL WITH AN AIRGAP TO ALLOW FOR THE EXPANSION...

HYBRID GATE CUT FOR STACKED TRANSISTORS

BRIDGE CELL PHASE CHANGE MEMORY

ELECTRONIC DEVICES WITH A LOW DIELECTRIC CONSTANT

MULTI-LEVEL PROGRAMMING OF PHASE CHANGE MEMORY DEVICE

STACKED CROSS-POINT PHASE CHANGE MEMORY

INTEGRATED INPUT OUTPUT AND LOGIC DEVICE FOR NANOSHEET TECHNOLOGY

MEMORY CELL WITH COMB-SHAPED ELECTRODES

CFET WITH INDEPENDENT GATE CONTROL AND LOW PARASITIC CAPACITANCE