Chakrapani G. Jambotkar

Person

Hopewell Junction, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Bipolar transistor integrated circuit technology
- Patent number 5,064,772
- Issue date Nov 12, 1991
- International Business Machines Corporation
- Chakrapani G. Jambotkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating complementary vertical transistor memory cell
- Patent number 4,981,807
- Issue date Jan 1, 1991
- International Business Machines Corporation
- Chakrapani G. Jambotkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor integrated circuit technology
- Patent number 4,967,253
- Issue date Oct 30, 1990
- International Business Machines Corporation
- Chakrapani G. Jambotkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making heterojunction bipolar transistors
- Patent number 4,954,457
- Issue date Sep 4, 1990
- International Business Machines Corporation
- Chakrapani G. Jambotkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistors
- Patent number 4,935,797
- Issue date Jun 19, 1990
- International Business Machines Corporation
- Chakrapani G. Jambotkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of laser mirror facets and integration of optoelectronics
- Patent number 4,933,302
- Issue date Jun 12, 1990
- International Business Machines Corporation
- Gregory Costrini
- G02 - OPTICS
Information Patent Grant
Fabrication of insulated gate gallium arsenide FET with self-aligne...
- Patent number 4,689,869
- Issue date Sep 1, 1987
- International Business Machines Corporation
- Chakrapani G. Jambotkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improving the planarity and passivation in a semiconduct...
- Patent number 4,663,832
- Issue date May 12, 1987
- International Business Machines Corporation
- Chakrapani G. Jambotkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
One mask technique for substrate contacting in integrated circuits...
- Patent number 4,584,763
- Issue date Apr 29, 1986
- International Business Machines Corporation
- Chakrapani G. Jambotkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned metal field effect transistor integrated circuits usin...
- Patent number 4,488,162
- Issue date Dec 11, 1984
- International Business Machines Corporation
- Chakrapani G. Jambotkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned metal process for field effect transistor integrated c...
- Patent number 4,471,522
- Issue date Sep 18, 1984
- International Business Machines Corporation
- Chakrapani G. Jambotkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned metal process for field effect transistor integrated c...
- Patent number 4,378,627
- Issue date Apr 5, 1983
- International Business Machines Corporation
- Chakrapani G. Jambotkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making high performance bipolar transistor with polysilic...
- Patent number 4,319,932
- Issue date Mar 16, 1982
- International Business Machines Corporation
- Chakrapani G. Jambotkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Making a short-channel FET
- Patent number 4,294,002
- Issue date Oct 13, 1981
- International Business Machines Corp.
- Chakrapani G. Jambotkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Constant voltage threshold device
- Patent number 4,264,857
- Issue date Apr 28, 1981
- International Business Machines Corporation
- Chakrapani G. Jambotkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar dual-channel charge-coupled device
- Patent number 4,223,329
- Issue date Sep 16, 1980
- International Business Machines Corporation
- Chakrapani G. Jambotkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating integrated circuits incorporating high-performance bipo...
- Patent number 4,195,307
- Issue date Mar 25, 1980
- International Business Machines Corporation
- Chakrapani G. Jambotkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Redundant charge-coupled device and method
- Patent number 4,155,121
- Issue date May 15, 1979
- International Business Machines Corporation
- Chakrapani G. Jambotkar
- G11 - INFORMATION STORAGE
Information Patent Grant
Power field effect transistors
- Patent number 4,145,700
- Issue date Mar 20, 1979
- International Business Machines Corporation
- Chakrapani G. Jambotkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming self-aligned field effect device by ion implanta...
- Patent number 4,128,439
- Issue date Dec 5, 1978
- International Business Machines Corporation
- Chakrapani G. Jambotkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating integrated circuits incorporating high-performance bipo...
- Patent number 4,099,987
- Issue date Jul 11, 1978
- International Business Machines Corporation
- Chakrapani Gajanan Jambotkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-phase charge coupled device structure
- Patent number 4,087,832
- Issue date May 2, 1978
- International Business Machines Corporation
- Chakrapani G. Jambotkar
- G11 - INFORMATION STORAGE
Information Patent Grant
Fabrication of power field effect transistors and the resulting str...
- Patent number 4,055,884
- Issue date Nov 1, 1977
- International Business Machines Corporation
- Chakrapani Gajanan Jambotkar
- H01 - BASIC ELECTRIC ELEMENTS

Chakrapani G. Jambotkar

Person

Patents Grantslast 30 patents

Bipolar transistor integrated circuit technology

Process for fabricating complementary vertical transistor memory cell

Bipolar transistor integrated circuit technology

Method of making heterojunction bipolar transistors

Heterojunction bipolar transistors

Formation of laser mirror facets and integration of optoelectronics

Fabrication of insulated gate gallium arsenide FET with self-aligne...

Method for improving the planarity and passivation in a semiconduct...

One mask technique for substrate contacting in integrated circuits...

Self-aligned metal field effect transistor integrated circuits usin...

Self-aligned metal process for field effect transistor integrated c...

Self-aligned metal process for field effect transistor integrated c...

Method of making high performance bipolar transistor with polysilic...

Making a short-channel FET

Constant voltage threshold device

Bipolar dual-channel charge-coupled device

Fabricating integrated circuits incorporating high-performance bipo...

Redundant charge-coupled device and method

Power field effect transistors

Method for forming self-aligned field effect device by ion implanta...

Fabricating integrated circuits incorporating high-performance bipo...

Two-phase charge coupled device structure

Fabrication of power field effect transistors and the resulting str...