Chan-Syun David Yang

Person

Taipei, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Gate structures for semiconductor devices
- Patent number 12,027,583
- Issue date Jul 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chansyun David Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors with negative capacitance layers
- Patent number 12,027,605
- Issue date Jul 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chansyun David Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and equipment for forming gaps in a material layer
- Patent number 12,014,954
- Issue date Jun 18, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chan-Syun David Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with inner spacer layer and method f...
- Patent number 11,973,129
- Issue date Apr 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Han-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Grid structures of ion beam etching (IBE) systems
- Patent number 11,961,706
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chansyun David Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laser interference fringe control for higher EUV light source and E...
- Patent number 11,960,210
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chansyun David Yang
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Independent control of stacked semiconductor device
- Patent number 11,916,145
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chansyun David Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory devices, semiconductor devices, and methods of operating a m...
- Patent number 11,903,188
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Grant
Nanostructured channel regions for semiconductor devices
- Patent number 11,869,954
- Issue date Jan 9, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chansyun David Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power rails for stacked semiconductor device
- Patent number 11,854,910
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chansyun David Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inner spacer formation in multi-gate transistors
- Patent number 11,830,928
- Issue date Nov 28, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Han-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor spacer structures
- Patent number 11,830,931
- Issue date Nov 28, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chansyun David Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with negative capacitance dielectric struct...
- Patent number 11,791,397
- Issue date Oct 17, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chansyun David Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors with negative capacitance layers
- Patent number 11,769,818
- Issue date Sep 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chansyun David Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for directional etch with micron zone beam and...
- Patent number 11,707,803
- Issue date Jul 25, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chansyun David Yang
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Semiconductor device structure with inner spacer layer
- Patent number 11,605,728
- Issue date Mar 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Han-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with negative capacitance dielectric struct...
- Patent number 11,594,616
- Issue date Feb 28, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chansyun David Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laser interference fringe control for higher EUV light source and E...
- Patent number 11,592,749
- Issue date Feb 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chansyun David Yang
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Method of forming semiconductor structure having layer with re-entr...
- Patent number 11,551,966
- Issue date Jan 10, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Shan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Independent control of stacked semiconductor device
- Patent number 11,502,199
- Issue date Nov 15, 2022
- Taiwan Semiconductor Manufacturing Co, Ltd.
- Chansyun David Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors with negative capacitance layers
- Patent number 11,437,371
- Issue date Sep 6, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chansyun David Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for directional etch with micron zone beam and...
- Patent number 11,351,635
- Issue date Jun 7, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chansyun David Yang
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Power rails for stacked semiconductor device
- Patent number 11,335,606
- Issue date May 17, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chansyun David Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma-assisted etching of metal oxides
- Patent number 11,282,711
- Issue date Mar 22, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chansyun David Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radical-activated etching of metal oxides
- Patent number 11,276,604
- Issue date Mar 15, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chansyun David Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and equipment for forming gaps in a material layer
- Patent number 11,244,856
- Issue date Feb 8, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chan-Syun David Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire stack GAA device and methods for producing the same
- Patent number 11,201,243
- Issue date Dec 14, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chansyun David Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and formation method of semiconductor device with metal g...
- Patent number 11,201,229
- Issue date Dec 14, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chansyun David Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laser interference fringe control for higher EUV light source and E...
- Patent number 11,150,559
- Issue date Oct 19, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chansyun David Yang
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Method for forming semiconductor device structure with inner spacer...
- Patent number 11,152,491
- Issue date Oct 19, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Han-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NANOSTRUCTURED CHANNEL REGIONS FOR SEMICONDUCTOR DEVICES
- Publication number 20240387673
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chansyun David YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Structures For Semiconductor Devices
- Publication number 20240290836
- Publication date Aug 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chansyun David YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING INTEGRATED CIRCUIT
- Publication number 20240248406
- Publication date Jul 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chansyun David YANG
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH INNER SPACER LAYER
- Publication number 20240234549
- Publication date Jul 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Han-Yu LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Grid Structures Of Ion Beam Etching (IBE) Systems
- Publication number 20240222071
- Publication date Jul 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chansyun David YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INDEPENDENT CONTROL OF STACKED SEMICONDUCTOR DEVICE
- Publication number 20240162347
- Publication date May 16, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chansyun David YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICES, SEMICONDUCTOR DEVICES, AND METHODS OF OPERATIONS A...
- Publication number 20240147711
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- PERNG-FEI YUH
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240088234
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- CHANSYUN DAVID YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF
- Publication number 20240072157
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- CHANSYUN DAVID YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR SELECTIVELY REMOVING PREDETERMINED PART OF SELECTED ELEM...
- Publication number 20240021432
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chansyun David YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH NEGATIVE CAPACITANCE DIELECTRIC STRUCT...
- Publication number 20240021705
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chansyun David YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH TUNABLE THRESHOLD VOLTAGE AND METHOD FOR...
- Publication number 20240021709
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chansyun David YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Rails For Stacked Semiconductor Device
- Publication number 20230395437
- Publication date Dec 7, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chansyun David YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Plasma-Assisted Etching Of Metal Oxides
- Publication number 20230386854
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chansyun David YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR SPACER STRUCTURES
- Publication number 20230387257
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chansyun David Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS WITH NEGATIVE CAPACITANCE LAYERS
- Publication number 20230378317
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chansyun David YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESSING APPARATUS AND METHOD OF MANUFACTURE
- Publication number 20230326705
- Publication date Oct 12, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Chansyun David YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICES, SEMICONDUCTOR DEVICES, AND METHODS OF OPERATING A...
- Publication number 20230262969
- Publication date Aug 17, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- PERNG-FEI YUH
- G11 - INFORMATION STORAGE
Information Patent Application
LASER INTERFERENCE FRINGE CONTROL FOR HIGHER EUV LIGHT SOURCE AND E...
- Publication number 20230236511
- Publication date Jul 27, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chansyun David YANG
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
FIELD EFFECT TRANSISTOR WITH NEGATIVE CAPACITANCE DIELECTRIC STRUCT...
- Publication number 20230223460
- Publication date Jul 13, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chansyun David YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH INNER SPACER LAYER AND METHOD F...
- Publication number 20230215936
- Publication date Jul 6, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Han-Yu LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Inner Spacer Formation in Multi-Gate Transistors
- Publication number 20230118700
- Publication date Apr 20, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- Han-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230067715
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Perng-Fei YUH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Voltage Control for Etching Systems
- Publication number 20230031722
- Publication date Feb 2, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chansyun David YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSTRUCTURED CHANNEL REGIONS FOR SEMICONDUCTOR DEVICES
- Publication number 20220384599
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chansyun David YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INDEPENDENT CONTROL OF STACKED SEMICONDUCTOR DEVICE
- Publication number 20220367702
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chansyun David YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURES FOR SEMICONDUCTOR DEVICES
- Publication number 20220367627
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chansyun David YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS WITH NEGATIVE CAPACITANCE LAYERS
- Publication number 20220359503
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chansyun David YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRID STRUCTURES OF ION BEAM ETCHING (IBE) SYSTEMS
- Publication number 20220351939
- Publication date Nov 3, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chansyun David YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERFEROMETER SYSTEMS AND METHODS FOR REAL TIME ETCH PROCESS COMPE...
- Publication number 20220336294
- Publication date Oct 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chansyun Yang
- H01 - BASIC ELECTRIC ELEMENTS

Chan-Syun David Yang

Person

Patents Grantslast 30 patents

Gate structures for semiconductor devices

Field effect transistors with negative capacitance layers

Method and equipment for forming gaps in a material layer

Semiconductor device structure with inner spacer layer and method f...

Grid structures of ion beam etching (IBE) systems

Laser interference fringe control for higher EUV light source and E...

Independent control of stacked semiconductor device

Memory devices, semiconductor devices, and methods of operating a m...

Nanostructured channel regions for semiconductor devices

Power rails for stacked semiconductor device

Inner spacer formation in multi-gate transistors

Transistor spacer structures

Field effect transistor with negative capacitance dielectric struct...

Field effect transistors with negative capacitance layers

Apparatus and method for directional etch with micron zone beam and...

Semiconductor device structure with inner spacer layer

Field effect transistor with negative capacitance dielectric struct...

Laser interference fringe control for higher EUV light source and E...

Method of forming semiconductor structure having layer with re-entr...

Independent control of stacked semiconductor device

Field effect transistors with negative capacitance layers

Apparatus and method for directional etch with micron zone beam and...

Power rails for stacked semiconductor device

Plasma-assisted etching of metal oxides

Radical-activated etching of metal oxides

Method and equipment for forming gaps in a material layer

Nanowire stack GAA device and methods for producing the same

Structure and formation method of semiconductor device with metal g...

Laser interference fringe control for higher EUV light source and E...

Method for forming semiconductor device structure with inner spacer...

Patents Applicationslast 30 patents

NANOSTRUCTURED CHANNEL REGIONS FOR SEMICONDUCTOR DEVICES

Gate Structures For Semiconductor Devices

METHOD OF MANUFACTURING INTEGRATED CIRCUIT

SEMICONDUCTOR DEVICE STRUCTURE WITH INNER SPACER LAYER

Grid Structures Of Ion Beam Etching (IBE) Systems

INDEPENDENT CONTROL OF STACKED SEMICONDUCTOR DEVICE

MEMORY DEVICES, SEMICONDUCTOR DEVICES, AND METHODS OF OPERATIONS A...

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF

METHOD FOR SELECTIVELY REMOVING PREDETERMINED PART OF SELECTED ELEM...

FIELD EFFECT TRANSISTOR WITH NEGATIVE CAPACITANCE DIELECTRIC STRUCT...

SEMICONDUCTOR DEVICE WITH TUNABLE THRESHOLD VOLTAGE AND METHOD FOR...

Power Rails For Stacked Semiconductor Device

Plasma-Assisted Etching Of Metal Oxides

TRANSISTOR SPACER STRUCTURES

FIELD EFFECT TRANSISTORS WITH NEGATIVE CAPACITANCE LAYERS

PROCESSING APPARATUS AND METHOD OF MANUFACTURE

MEMORY DEVICES, SEMICONDUCTOR DEVICES, AND METHODS OF OPERATING A...

LASER INTERFERENCE FRINGE CONTROL FOR HIGHER EUV LIGHT SOURCE AND E...

FIELD EFFECT TRANSISTOR WITH NEGATIVE CAPACITANCE DIELECTRIC STRUCT...

SEMICONDUCTOR DEVICE STRUCTURE WITH INNER SPACER LAYER AND METHOD F...

Inner Spacer Formation in Multi-Gate Transistors

INTEGRATED CIRCUIT DEVICE AND METHOD FOR FABRICATING THE SAME

Voltage Control for Etching Systems

NANOSTRUCTURED CHANNEL REGIONS FOR SEMICONDUCTOR DEVICES

INDEPENDENT CONTROL OF STACKED SEMICONDUCTOR DEVICE

GATE STRUCTURES FOR SEMICONDUCTOR DEVICES

FIELD EFFECT TRANSISTORS WITH NEGATIVE CAPACITANCE LAYERS

GRID STRUCTURES OF ION BEAM ETCHING (IBE) SYSTEMS

INTERFEROMETER SYSTEMS AND METHODS FOR REAL TIME ETCH PROCESS COMPE...