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Charles Edward Weitzel
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Dayton, NJ, US
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last 30 patents
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Patent Grant
Use of silicide to bridge unwanted polycrystalline silicon P-N junc...
Patent number
4,333,099
Issue date
Jun 1, 1982
RCA Corporation
Donald J. Tanguay
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Planar semiconductor devices and method of making the same
Patent number
4,263,709
Issue date
Apr 28, 1981
RCA Corporation
Charles E. Weitzel
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Insulated gate field effect silicon-on-sapphire transistor and meth...
Patent number
4,199,773
Issue date
Apr 22, 1980
RCA Corporation
Alvin M. Goodman
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Planar semiconductor devices and method of making the same
Patent number
4,160,260
Issue date
Jul 3, 1979
RCA Corp.
Charles E. Weitzel
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of making silicon on sapphire field effect transistors with...
Patent number
4,131,496
Issue date
Dec 26, 1978
RCA Corp.
Charles E. Weitzel
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for adjusting the leakage current of silicon-on-sapphire ins...
Patent number
4,091,527
Issue date
May 30, 1978
RCA Corporation
Alvin Malcolm Goodman
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of etching sapphire utilizing sulfur hexafluoride
Patent number
4,052,251
Issue date
Oct 4, 1977
RCA Corporation
Charles Edward Weitzel
C30 - CRYSTAL GROWTH