Cheng-Hao Hou

Person

Hsinchu City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated circuit device with improved reliability
- Patent number 12,074,206
- Issue date Aug 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Incorporating nitrogen in dipole engineering for multi-threshold vo...
- Patent number 12,040,365
- Issue date Jul 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Pei Ying Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-k gate dielectric and method forming same
- Patent number 12,020,991
- Issue date Jun 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Cheng-Hao Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Triple layer high-k gate dielectric stack for workfunction engineering
- Patent number 12,015,066
- Issue date Jun 18, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Yuan Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structures in semiconductor devices
- Patent number 11,915,979
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Pei Ying Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structures in semiconductor devices
- Patent number 11,756,832
- Issue date Sep 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Pei Ying Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 11,462,626
- Issue date Oct 4, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming semiconductor devices and FinFET devices having...
- Patent number 11,107,897
- Issue date Aug 31, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Che-Hao Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivator for gate dielectric
- Patent number 10,964,543
- Issue date Mar 30, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsung-Da Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivator for gate dielectric
- Patent number 10,468,258
- Issue date Nov 5, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsung-Da Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buffer layer on semiconductor devices
- Patent number 10,374,055
- Issue date Aug 6, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Hao Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and FinFET devices having shielding layers
- Patent number 10,367,078
- Issue date Jul 30, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Yuan Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET doping methods and structures thereof
- Patent number 10,276,399
- Issue date Apr 30, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Hao Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device comprising titanium silico...
- Patent number 10,032,625
- Issue date Jul 24, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Hao Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET doping methods and structures thereof
- Patent number 9,960,053
- Issue date May 1, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Hao Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a gate dielectric for high-k metal gate devices
- Patent number 9,711,373
- Issue date Jul 18, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Che-Hao Chang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming metal gate electrode
- Patent number 9,449,828
- Issue date Sep 20, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Hao Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate electrode of a field effect transistor
- Patent number 9,196,691
- Issue date Nov 24, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Hao Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device comprising titanium silico...
- Patent number 9,165,826
- Issue date Oct 20, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Hao Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a buffer layer
- Patent number 8,765,603
- Issue date Jul 1, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Hao Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Digital power on reset controller
- Patent number 8,618,849
- Issue date Dec 31, 2013
- Broadcom Corporation
- Jiunn-Ming Ju
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Method for fabricating a gate dielectric layer
- Patent number 8,580,698
- Issue date Nov 12, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Yang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate electrode of a field effect transistor
- Patent number 8,546,885
- Issue date Oct 1, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Hao Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Digital power-on reset controller
- Patent number 8,395,426
- Issue date Mar 12, 2013
- Broadcom Corporation
- Jiunn-Ming Ju
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
System and method for linking list transmit queue management
- Patent number 8,184,652
- Issue date May 22, 2012
- Broadcom Corporation
- Cheng-Liang (Andrew) Hou
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Switch with error checking and correcting
- Patent number 7,900,116
- Issue date Mar 1, 2011
- Broadcom Corporation
- Cheng-Liang Hou
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
System and method for variable data transmission rate resolution
- Patent number 7,804,776
- Issue date Sep 28, 2010
- Broadcom Corporation
- Cheng-Liang Hou
- H04 - ELECTRIC COMMUNICATION TECHNIQUE

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CIRCUIT DEVICE WITH IMPROVED RELIABILITY
- Publication number 20240413221
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR GATE STRUCTURES
- Publication number 20240379798
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co, LTD.
- Cheng-Hao Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Incorporating Nitrogen in Dipole Engineering for Multi-Threshold Vo...
- Publication number 20240347606
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Pei Ying Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Aluminum Nitride Dipole Dopant Film for Tuning Multi-VT Devices
- Publication number 20240332004
- Publication date Oct 3, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chi On Chui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THRESHOLD VOLTAGE TUNING OF NFET VIA IMPLEMENTATION OF AN ALUMINUM-...
- Publication number 20240322040
- Publication date Sep 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Pei Ying Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THRESHOLD VOLTAGE TUNING USING A MULTIPLE DIPOLE LOOP PROCESS FOR C...
- Publication number 20240321646
- Publication date Sep 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Ho Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Treatment of Electrodes of MIM Capacitors
- Publication number 20240313044
- Publication date Sep 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shin-Hung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Treatment of Electrodes of MIM Capacitors
- Publication number 20240313041
- Publication date Sep 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shin-Hung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-K Gate Dielectric and Method Forming Same
- Publication number 20240297084
- Publication date Sep 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Hao Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Incorporating Nitrogen in Dipole Engineering for Multi-Threshold Vo...
- Publication number 20240290630
- Publication date Aug 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Pei Ying Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Structures in Semiconductor Devices
- Publication number 20240153823
- Publication date May 9, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Pei Ying Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal-Insulator-Metal Capacitors And Methods Of Forming The Same
- Publication number 20240088204
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Li Chung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method for Forming the Same
- Publication number 20240021667
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Hao Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRIPLE LAYER HIGH-K GATE DIELECTRIC STACK FOR WORKFUNCTION ENGINEERING
- Publication number 20230378294
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Yuan Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method for Forming the Same
- Publication number 20230343818
- Publication date Oct 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shin-Hung Tsai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
CAPACITOR DEVICE WITH MULTI-LAYER DIELECTRIC STRUCTURE
- Publication number 20230154972
- Publication date May 18, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-En JENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Gate Structures and Methods of Forming the Same
- Publication number 20230139258
- Publication date May 4, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Hao Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K GATE DIELECTRIC AND METHOD FORMING SAME
- Publication number 20230069187
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Hao Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE WITH IMPROVED RELIABILITY
- Publication number 20230063857
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Manufacture
- Publication number 20220376077
- Publication date Nov 24, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURES IN SEMICONDUCTOR DEVICES
- Publication number 20220367279
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Pei Ying Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Triple Layer High-K Gate Dielectric Stack for Workfunction Engineering
- Publication number 20210399104
- Publication date Dec 23, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Yuan Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Manufacture
- Publication number 20210126105
- Publication date Apr 29, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURES IN SEMICONDUCTOR DEVICES
- Publication number 20210098303
- Publication date Apr 1, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Pei Ying Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING SEMICONDUCTOR DEVICES AND FINFET DEVICES
- Publication number 20210028285
- Publication date Jan 28, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Che-Hao Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Passivator for Gate Dielectric
- Publication number 20200066535
- Publication date Feb 27, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Da Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES, FINFET DEVICES AND METHODS OF FORMING THE SAME
- Publication number 20190140082
- Publication date May 9, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Yuan Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DOPING METHODS AND STRUCTURES THEREOF
- Publication number 20180247829
- Publication date Aug 30, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Hao Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DOPING METHODS AND STRUCTURES THEREOF
- Publication number 20170170027
- Publication date Jun 15, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Hao Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING METAL GATE ELECTRODE
- Publication number 20160064223
- Publication date Mar 3, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Hao HOU
- H01 - BASIC ELECTRIC ELEMENTS

Cheng-Hao Hou

Person

Patents Grantslast 30 patents

Integrated circuit device with improved reliability

Incorporating nitrogen in dipole engineering for multi-threshold vo...

High-k gate dielectric and method forming same

Triple layer high-k gate dielectric stack for workfunction engineering

Gate structures in semiconductor devices

Gate structures in semiconductor devices

Semiconductor device and method of manufacture

Methods of forming semiconductor devices and FinFET devices having...

Passivator for gate dielectric

Passivator for gate dielectric

Buffer layer on semiconductor devices

Semiconductor devices and FinFET devices having shielding layers

FinFET doping methods and structures thereof

Method of forming a semiconductor device comprising titanium silico...

FinFET doping methods and structures thereof

Method of fabricating a gate dielectric for high-k metal gate devices

Method of forming metal gate electrode

Metal gate electrode of a field effect transistor

Method of forming a semiconductor device comprising titanium silico...

Method of forming a buffer layer

Digital power on reset controller

Method for fabricating a gate dielectric layer

Metal gate electrode of a field effect transistor

Digital power-on reset controller

System and method for linking list transmit queue management

Switch with error checking and correcting

System and method for variable data transmission rate resolution

Patents Applicationslast 30 patents

INTEGRATED CIRCUIT DEVICE WITH IMPROVED RELIABILITY

TRANSISTOR GATE STRUCTURES

Incorporating Nitrogen in Dipole Engineering for Multi-Threshold Vo...

Aluminum Nitride Dipole Dopant Film for Tuning Multi-VT Devices

THRESHOLD VOLTAGE TUNING OF NFET VIA IMPLEMENTATION OF AN ALUMINUM-...

THRESHOLD VOLTAGE TUNING USING A MULTIPLE DIPOLE LOOP PROCESS FOR C...

Treatment of Electrodes of MIM Capacitors

Treatment of Electrodes of MIM Capacitors

High-K Gate Dielectric and Method Forming Same

Incorporating Nitrogen in Dipole Engineering for Multi-Threshold Vo...

Gate Structures in Semiconductor Devices

Metal-Insulator-Metal Capacitors And Methods Of Forming The Same

Semiconductor Device and Method for Forming the Same

TRIPLE LAYER HIGH-K GATE DIELECTRIC STACK FOR WORKFUNCTION ENGINEERING

Semiconductor Device and Method for Forming the Same

CAPACITOR DEVICE WITH MULTI-LAYER DIELECTRIC STRUCTURE

Transistor Gate Structures and Methods of Forming the Same

HIGH-K GATE DIELECTRIC AND METHOD FORMING SAME

INTEGRATED CIRCUIT DEVICE WITH IMPROVED RELIABILITY

Semiconductor Device and Method of Manufacture

GATE STRUCTURES IN SEMICONDUCTOR DEVICES

Triple Layer High-K Gate Dielectric Stack for Workfunction Engineering

Semiconductor Device and Method of Manufacture

GATE STRUCTURES IN SEMICONDUCTOR DEVICES

METHODS OF FORMING SEMICONDUCTOR DEVICES AND FINFET DEVICES

Passivator for Gate Dielectric

SEMICONDUCTOR DEVICES, FINFET DEVICES AND METHODS OF FORMING THE SAME

FINFET DOPING METHODS AND STRUCTURES THEREOF

FINFET DOPING METHODS AND STRUCTURES THEREOF

METHOD OF FORMING METAL GATE ELECTRODE