Chi Chang

Person

Redwood City, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Flash memory cells having trenched storage elements
- Patent number 9,917,211
- Issue date Mar 13, 2018
- Cypress Semiconductor Corporation
- Wei Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual storage node memory
- Patent number 9,461,151
- Issue date Oct 4, 2016
- Cyress Semiconductor Corporation
- Fred T. K. Cheung
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for fabricating memory cells having split charge storage nodes
- Patent number 9,159,568
- Issue date Oct 13, 2015
- Cypress Semiconductor Corporation
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell system using silicon-rich nitride
- Patent number 8,803,216
- Issue date Aug 12, 2014
- Spansion, LLC
- Meng Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory cells having trenched storage elements
- Patent number 8,742,486
- Issue date Jun 3, 2014
- Spansion, LLC
- Wei Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual storage node memory
- Patent number 8,564,042
- Issue date Oct 22, 2013
- Spansion LLC
- Fred Cheung
- G11 - INFORMATION STORAGE
Information Patent Grant
Gate replacement with top oxide regrowth for the top oxide improvement
- Patent number 8,455,268
- Issue date Jun 4, 2013
- Spansion LLC
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual charge storage node memory device and methods for fabricating...
- Patent number 8,183,623
- Issue date May 22, 2012
- Spansion LLC
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory comprising dual charge storage nodes and metho...
- Patent number 8,076,712
- Issue date Dec 13, 2011
- Spansion LLC
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual charge storage node memory device and methods for fabricating...
- Patent number 7,915,123
- Issue date Mar 29, 2011
- Spansion LLC
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual storage node memory devices and methods for fabricating the same
- Patent number 7,785,965
- Issue date Aug 31, 2010
- Spansion LLC
- Unsoon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory comprising dual charge storage nodes and metho...
- Patent number 7,767,517
- Issue date Aug 3, 2010
- Spansion LLC
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-channel NAND in isolated N-well
- Patent number 7,671,403
- Issue date Mar 2, 2010
- Spansion LLC
- Wei Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory with buried bit lines
- Patent number 7,288,809
- Issue date Oct 30, 2007
- Spansion LLC
- Richard M. Fastow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device having a P+ gate and thin bottom oxide and method of...
- Patent number 6,995,423
- Issue date Feb 7, 2006
- Advanced Micro Devices, Inc.
- Wei Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming nitrogen-rich regions in non-volatile semicondu...
- Patent number 6,989,319
- Issue date Jan 24, 2006
- Advanced Micro Devices, Inc.
- Mark Ramsbey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for forming dual gate structures in a nonvolatile...
- Patent number 6,974,995
- Issue date Dec 13, 2005
- Advanced Micro Devices, Inc.
- Angela Hui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device for programming cells in a memory array in a narr...
- Patent number 6,961,267
- Issue date Nov 1, 2005
- Advanced Micro Devices, Inc.
- Richard M. Fastow
- G11 - INFORMATION STORAGE
Information Patent Grant
PCI and MII compatible home phoneline networking alliance (HPNA) in...
- Patent number 6,947,438
- Issue date Sep 20, 2005
- Advanced Micro Devices, Inc.
- Chi-Sheng Chang
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Method and system for erasing a nitride memory device
- Patent number 6,906,959
- Issue date Jun 14, 2005
- Advanced Micro Devices, Inc.
- Mark W. Randolph
- G11 - INFORMATION STORAGE
Information Patent Grant
Flash memory cell programming method and system
- Patent number 6,894,925
- Issue date May 17, 2005
- Advanced Micro Devices, Inc.
- Sheunghee Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device having A P+ gate and thin bottom oxide and method of...
- Patent number 6,885,590
- Issue date Apr 26, 2005
- Advanced Micro Devices, Inc.
- Wei Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PCI and MII compatible home phoneline networking alliance (HPNA) in...
- Patent number 6,853,645
- Issue date Feb 8, 2005
- Advanced Micro Devices, Inc.
- Chi-Sheng Chang
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Method for protecting gate edges from charge gain/loss in semicondu...
- Patent number 6,808,996
- Issue date Oct 26, 2004
- Advanced Micro Devices, Inc.
- Tuan D. Pham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for scaling nonvolatile memory cells
- Patent number 6,806,155
- Issue date Oct 19, 2004
- Advanced Micro Devices, Inc.
- Kelwin Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitridated tunnel oxide barriers for flash memory technology circuitry
- Patent number 6,787,840
- Issue date Sep 7, 2004
- Advanced Micro Devices, Inc.
- Tuan Duc Pham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for providing a contact hole in a semiconductor d...
- Patent number 6,764,929
- Issue date Jul 20, 2004
- Advanced Micro Devices, Inc.
- Angela Hui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench side wall charge trapping dielectric flash memory device
- Patent number 6,754,105
- Issue date Jun 22, 2004
- Advanced Micro Devices, Inc.
- Chi Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory cell with a nitridated oxide layer
- Patent number 6,750,157
- Issue date Jun 15, 2004
- Advanced Micro Devices, Inc.
- Richard M. Fastow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory array with dual function control lines and asymmetrica...
- Patent number 6,744,668
- Issue date Jun 1, 2004
- Advanced Micro Devices, Inc.
- Michael A. Van Buskirk
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FLASH MEMORY CELLS HAVING TRENCHED STORAGE ELEMENTS
- Publication number 20140225177
- Publication date Aug 14, 2014
- SPANSION LLC
- Wei ZHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL STORAGE NODE MEMORY
- Publication number 20140024190
- Publication date Jan 23, 2014
- SPANSION LLC
- Fred CHEUNG
- G11 - INFORMATION STORAGE
Information Patent Application
DUAL CHARGE STORAGE NODE MEMORY DEVICE AND METHODS FOR FABRICATING...
- Publication number 20110175158
- Publication date Jul 21, 2011
- Chungho LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY COMPRISING DUAL CHARGE STORAGE NODES AND METHO...
- Publication number 20100283100
- Publication date Nov 11, 2010
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE REPLACEMENT WITH TOP OXIDE REGROWTH FOR THE TOP OXIDE IMPROVEMENT
- Publication number 20090061631
- Publication date Mar 5, 2009
- SPANSION LLC
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY COMPRISING DUAL CHARGE STORAGE NODES AND METHO...
- Publication number 20080149999
- Publication date Jun 26, 2008
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory cells having split charge storage nodes and methods for fabr...
- Publication number 20080142875
- Publication date Jun 19, 2008
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-CHANNEL NAND IN ISOLATED N-WELL
- Publication number 20080135918
- Publication date Jun 12, 2008
- SPANSION LLC
- Wei Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL STORAGE NODE MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME
- Publication number 20080064165
- Publication date Mar 13, 2008
- Unsoon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual charge storage node with undercut gate oxide for deep sub-micr...
- Publication number 20080061359
- Publication date Mar 13, 2008
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL SYSTEM USING SILICON-RICH NITRIDE
- Publication number 20070215932
- Publication date Sep 20, 2007
- SPANSION LLC
- Meng Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Flash memory cells having trenched storage elements
- Publication number 20070205455
- Publication date Sep 6, 2007
- Wei Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual storage node memory
- Publication number 20070205454
- Publication date Sep 6, 2007
- Fred Cheung
- G11 - INFORMATION STORAGE
Information Patent Application
Memory device having a P+ gate and thin bottom oxide and method of...
- Publication number 20040232470
- Publication date Nov 25, 2004
- Wei Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and system for erasing a nitride memory device
- Publication number 20040169218
- Publication date Sep 2, 2004
- Mark W. Randolph
- G11 - INFORMATION STORAGE
Information Patent Application
SALICIDED GATE FOR VIRTUAL GROUND ARRAYS
- Publication number 20030085417
- Publication date May 8, 2003
- Mark T. Ramsbey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming nitridated tunnel oxide barriers for flash memory...
- Publication number 20030073288
- Publication date Apr 17, 2003
- Tuan Duc Pham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tungsten gate MOS transistor and memory cell and method of making same
- Publication number 20020137284
- Publication date Sep 26, 2002
- Advanced Micro Devices, Inc.
- Chi Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lowered channel doping with source side boron implant for deep sub...
- Publication number 20020106852
- Publication date Aug 8, 2002
- Yue-Song He
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Flash memory cells having trenched storage elements

Dual storage node memory

Method for fabricating memory cells having split charge storage nodes

Memory cell system using silicon-rich nitride

Flash memory cells having trenched storage elements

Dual storage node memory

Gate replacement with top oxide regrowth for the top oxide improvement

Dual charge storage node memory device and methods for fabricating...

Semiconductor memory comprising dual charge storage nodes and metho...

Dual charge storage node memory device and methods for fabricating...

Dual storage node memory devices and methods for fabricating the same

Semiconductor memory comprising dual charge storage nodes and metho...

P-channel NAND in isolated N-well

Flash memory with buried bit lines

Memory device having a P+ gate and thin bottom oxide and method of...

Methods for forming nitrogen-rich regions in non-volatile semicondu...

Method and system for forming dual gate structures in a nonvolatile...

Method and device for programming cells in a memory array in a narr...

PCI and MII compatible home phoneline networking alliance (HPNA) in...

Method and system for erasing a nitride memory device

Flash memory cell programming method and system

Memory device having A P+ gate and thin bottom oxide and method of...

PCI and MII compatible home phoneline networking alliance (HPNA) in...

Method for protecting gate edges from charge gain/loss in semicondu...

Method and system for scaling nonvolatile memory cells

Nitridated tunnel oxide barriers for flash memory technology circuitry

Method and system for providing a contact hole in a semiconductor d...

Trench side wall charge trapping dielectric flash memory device

Nonvolatile memory cell with a nitridated oxide layer

Flash memory array with dual function control lines and asymmetrica...

Patents Applicationslast 30 patents

FLASH MEMORY CELLS HAVING TRENCHED STORAGE ELEMENTS

DUAL STORAGE NODE MEMORY

DUAL CHARGE STORAGE NODE MEMORY DEVICE AND METHODS FOR FABRICATING...

SEMICONDUCTOR MEMORY COMPRISING DUAL CHARGE STORAGE NODES AND METHO...

GATE REPLACEMENT WITH TOP OXIDE REGROWTH FOR THE TOP OXIDE IMPROVEMENT

SEMICONDUCTOR MEMORY COMPRISING DUAL CHARGE STORAGE NODES AND METHO...

Memory cells having split charge storage nodes and methods for fabr...

P-CHANNEL NAND IN ISOLATED N-WELL

DUAL STORAGE NODE MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME

Dual charge storage node with undercut gate oxide for deep sub-micr...

MEMORY CELL SYSTEM USING SILICON-RICH NITRIDE

Flash memory cells having trenched storage elements

Dual storage node memory

Memory device having a P+ gate and thin bottom oxide and method of...

Method and system for erasing a nitride memory device

SALICIDED GATE FOR VIRTUAL GROUND ARRAYS

Method of forming nitridated tunnel oxide barriers for flash memory...

Tungsten gate MOS transistor and memory cell and method of making same

Lowered channel doping with source side boron implant for deep sub...