Chia-Ching Lin

Person

West Lafayette, IN, US

People

Patents Grantslast 30 patents

Information Patent Grant
Transition metal dichalcogenide nanosheet transistors and methods o...
- Patent number 12,266,712
- Issue date Apr 1, 2025
- Intel Corporation
- Ashish Verma Penumatcha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with monocrystalline metal chalcogenide channel materials
- Patent number 12,266,720
- Issue date Apr 1, 2025
- Intel Corporation
- Carl Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitors with built-in electric fields
- Patent number 12,224,309
- Issue date Feb 11, 2025
- Intel Corporation
- Sou-Chi Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transition metal dichalcogenide nanowires and methods of fabrication
- Patent number 12,176,388
- Issue date Dec 24, 2024
- Intel Corporation
- Kevin O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Piezo-resistive transistor based resonator with anti-ferroelectric...
- Patent number 12,125,893
- Issue date Oct 22, 2024
- Intel Corporation
- Tanay Gosavi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transition metal dichalcogenide (TMD) layer stack for transistor ap...
- Patent number 12,125,895
- Issue date Oct 22, 2024
- Intel Corporation
- Chelsey Dorow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Piezo-resistive transistor based resonator with ferroelectric gate...
- Patent number 12,113,117
- Issue date Oct 8, 2024
- Intel Corporation
- Tanay Gosavi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystalline bottom electrode for perovskite capacitors and methods...
- Patent number 12,100,731
- Issue date Sep 24, 2024
- Intel Corporation
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric or anti-ferroelectric trench capacitor with spacers f...
- Patent number 12,040,378
- Issue date Jul 16, 2024
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transition metal dichalcogenide based spin orbit torque memory device
- Patent number 12,009,018
- Issue date Jun 11, 2024
- Intel Corporation
- Chia-Ching Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cells with ferroelectric capacitors separate from transistor...
- Patent number 11,980,037
- Issue date May 7, 2024
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
TMD inverted nanowire integration
- Patent number 11,935,956
- Issue date Mar 19, 2024
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MFM capacitor and process for forming such
- Patent number 11,901,400
- Issue date Feb 13, 2024
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nano-rod spin orbit coupling based magnetic random access memory wi...
- Patent number 11,818,963
- Issue date Nov 14, 2023
- Intel Corporation
- Sasikanth Manipatruni
- G11 - INFORMATION STORAGE
Information Patent Grant
MFM capacitor with multilayered oxides and metals and processes for...
- Patent number 11,769,789
- Issue date Sep 26, 2023
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer high-k gate dielectric for a high performance logic tran...
- Patent number 11,742,407
- Issue date Aug 29, 2023
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transition metal dichalcogenide based magnetoelectric memory device
- Patent number 11,696,514
- Issue date Jul 4, 2023
- Intel Corporation
- Chia-Ching Lin
Information Patent Grant
Spin orbit coupling memory device with top spin orbit coupling elec...
- Patent number 11,665,975
- Issue date May 30, 2023
- Intel Corporation
- Tanay Gosavi
- G11 - INFORMATION STORAGE
Information Patent Grant
Piezo-resistive transistor based resonator with anti-ferroelectric...
- Patent number 11,646,356
- Issue date May 9, 2023
- Intel Corporation
- Tanay Gosavi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device with (anti)ferroelectric spacer structures
- Patent number 11,640,984
- Issue date May 2, 2023
- Intel Corporation
- Jack Kavalieros
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Piezo-resistive transistor based resonator with ferroelectric gate...
- Patent number 11,637,191
- Issue date Apr 25, 2023
- Intel Corporation
- Tanay Gosavi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory device with ruthenium diffusion barrier
- Patent number 11,626,451
- Issue date Apr 11, 2023
- Intel Corporation
- Emily Walker
- G11 - INFORMATION STORAGE
Information Patent Grant
Trench capacitor with extended dielectric layer
- Patent number 11,626,475
- Issue date Apr 11, 2023
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Antiferromagnet based spin orbit torque memory device
- Patent number 11,621,391
- Issue date Apr 4, 2023
- Intel Corporation
- Chia-Ching Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Transistor device with variously conformal gate dielectric layers
- Patent number 11,616,130
- Issue date Mar 28, 2023
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric resonator
- Patent number 11,605,624
- Issue date Mar 14, 2023
- Intel Corporation
- Tanay Gosavi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular spin injection via spatial modulation of spin orbit c...
- Patent number 11,594,270
- Issue date Feb 28, 2023
- Intel Corporation
- Tanay Gosavi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structures formed with 2DEG at complex oxide interfaces
- Patent number 11,594,624
- Issue date Feb 28, 2023
- Intel Corporation
- Sasikanth Manipatruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin orbit torque memory devices and methods of fabrication
- Patent number 11,574,666
- Issue date Feb 7, 2023
- Intel Corporation
- Tanay Gosavi
- G11 - INFORMATION STORAGE
Information Patent Grant
Insertion layer between spin hall effect or spin orbit torque elect...
- Patent number 11,575,083
- Issue date Feb 7, 2023
- Intel Corporation
- Tanay Gosavi
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CIRCUIT STRUCTURE WITH DEEP VIA BAR WIDTH TUNING
- Publication number 20250112120
- Publication date Apr 3, 2025
- Intel Corporation
- Tao CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE POWER GATING
- Publication number 20250112122
- Publication date Apr 3, 2025
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A 2D CHANNEL TRANSISTOR BY EMPLOYING SELECTIV...
- Publication number 20250113572
- Publication date Apr 3, 2025
- Intel Corporation
- Mahmut Sami Kavrik
Information Patent Application
TRANSITION METAL DICHALCOGENIDE MONOLAYER TRANSFER USING LOW STRAIN...
- Publication number 20250113573
- Publication date Apr 3, 2025
- Intel Corporation
- Andrey Vyatskikh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES WITH INTERNAL SPACERS FOR 2D CHANNEL...
- Publication number 20250113547
- Publication date Apr 3, 2025
- Intel Corporation
- Chia-Ching LIN
Information Patent Application
TRANSISTOR COMPRISING A COMPOSITE GATE DIELECTRIC STRUCTURE AND MET...
- Publication number 20250113540
- Publication date Apr 3, 2025
- Intel Corporation
- Carl H. Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH CONTACT STRUCTURE WITH ETCH-STOP LAYER
- Publication number 20250113559
- Publication date Apr 3, 2025
- Intel Corporation
- Guowei XU
Information Patent Application
MULTIPLE VOLTAGE THRESHOLD INTEGRATED CIRCUIT STRUCTURE WITH LOCAL...
- Publication number 20250113595
- Publication date Apr 3, 2025
- Intel Corporation
- Tao CHU
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING REDUCED LOCAL LAYOUT EFFECTS
- Publication number 20250107175
- Publication date Mar 27, 2025
- Intel Corporation
- Tao CHU
Information Patent Application
DIELECTRIC ISOLATION BETWEEN EPITAXIAL REGIONS AND SUBFIN REGIONS
- Publication number 20250107156
- Publication date Mar 27, 2025
- Intel Corporation
- Chiao-Ti Huang
Information Patent Application
CAPACITORS FOR USE WITH INTEGRATED CIRCUIT PACKAGES
- Publication number 20250105136
- Publication date Mar 27, 2025
- Intel Corporation
- Kimin Jun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ARCHITECTURES AND METHODS TO MODULATE CONTACT RESISTANCE IN 2D MATE...
- Publication number 20250107147
- Publication date Mar 27, 2025
- Intel Corporation
- Mahmut Sami Kavrik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIRGAP SPACER BETWEEN GATE ELECTRODE AND SOURCE OR DRAIN CONTACT
- Publication number 20250107212
- Publication date Mar 27, 2025
- Intel Corporation
- Yang Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VIA STRUCTURE WITH IMPROVED SUBSTRATE GROUNDING
- Publication number 20250096114
- Publication date Mar 20, 2025
- Intel Corporation
- Robin Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES WITH PATCH SPACERS
- Publication number 20250098260
- Publication date Mar 20, 2025
- Intel Corporation
- Guowei XU
Information Patent Application
THROUGH-GATE STRUCTURE WITH AN AIRGAP SPACER IN A SEMICONDUCTOR DEVICE
- Publication number 20250089310
- Publication date Mar 13, 2025
- Intel Corporation
- Ting-Hsiang Hung
Information Patent Application
FERROELECTRIC CAPACITOR WITH INSULATING THIN FILM
- Publication number 20250006434
- Publication date Jan 2, 2025
- Intel Corporation
- Chia-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERFORMANCE OPTIMIZATION OF TRANSISTORS SHARING CHANNEL STRUCTURES...
- Publication number 20250006734
- Publication date Jan 2, 2025
- Intel Corporation
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LONG CHANNEL FIN TRANSISTORS IN NANORIBBON-BASED DEVICES
- Publication number 20240321987
- Publication date Sep 26, 2024
- Intel Corporation
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEEDED GROWTH FOR 2D NANORIBBON TRANSISTORS
- Publication number 20240222428
- Publication date Jul 4, 2024
- Intel Corporation
- Chelsey Dorow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BEOL CONTACT METALS FOR 2D TRANSISTORS
- Publication number 20240222461
- Publication date Jul 4, 2024
- Intel Corporation
- Ande Kitamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH CHANNEL MATERIAL IN A STACK WITH INSULATOR MATERIAL...
- Publication number 20240222484
- Publication date Jul 4, 2024
- Intel Corporation
- Chia-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVATION OF CRYSTALLINE SUBSTRATE FOR METAL CHALCOGEN MATERIAL S...
- Publication number 20240222113
- Publication date Jul 4, 2024
- Intel Corporation
- Carl H. Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
2D NANORIBBONS UTILIZING SILICON SCAFFOLDING
- Publication number 20240222483
- Publication date Jul 4, 2024
- Intel Corporation
- Carl H. Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSFER-FREE 2D FET AND FEFET DEVICE FABRICATION BY 2D MATERIAL GR...
- Publication number 20240222485
- Publication date Jul 4, 2024
- Intel Corporation
- Mahmut Sami Kavrik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE GATE OXIDE FORMATION ON 2D MATERIAL BASED TRANSISTOR DEVICES
- Publication number 20240222441
- Publication date Jul 4, 2024
- Intel Corporation
- Mahmut Sami Kavrik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROBABILISTIC AND DETERMINISTIC LOGIC DEVICES WITH REDUCED SYMMETRY...
- Publication number 20240206348
- Publication date Jun 20, 2024
- Intel Corporation
- Punyashloka Debashis
- G11 - INFORMATION STORAGE
Information Patent Application
TMD INVERTED NANOWIRE INTEGRATION
- Publication number 20240186416
- Publication date Jun 6, 2024
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETOELECTRIC LOGIC WITH MAGNETIC TUNNEL JUNCTIONS
- Publication number 20240147867
- Publication date May 2, 2024
- Intel Corporation
- Punyashloka Debashis
- G11 - INFORMATION STORAGE
Information Patent Application
DEVICE, METHOD AND SYSTEM TO PROVIDE A RANDOM ACCESS MEMORY WITH A...
- Publication number 20240112730
- Publication date Apr 4, 2024
- Intel Corporation
- Sou-Chi Chang
- G11 - INFORMATION STORAGE

Chia-Ching Lin

Person

Patents Grantslast 30 patents

Transition metal dichalcogenide nanosheet transistors and methods o...

Transistors with monocrystalline metal chalcogenide channel materials

Capacitors with built-in electric fields

Transition metal dichalcogenide nanowires and methods of fabrication

Piezo-resistive transistor based resonator with anti-ferroelectric...

Transition metal dichalcogenide (TMD) layer stack for transistor ap...

Piezo-resistive transistor based resonator with ferroelectric gate...

Crystalline bottom electrode for perovskite capacitors and methods...

Ferroelectric or anti-ferroelectric trench capacitor with spacers f...

Transition metal dichalcogenide based spin orbit torque memory device

Memory cells with ferroelectric capacitors separate from transistor...

TMD inverted nanowire integration

MFM capacitor and process for forming such

Nano-rod spin orbit coupling based magnetic random access memory wi...

MFM capacitor with multilayered oxides and metals and processes for...

Multilayer high-k gate dielectric for a high performance logic tran...

Transition metal dichalcogenide based magnetoelectric memory device

Spin orbit coupling memory device with top spin orbit coupling elec...

Piezo-resistive transistor based resonator with anti-ferroelectric...

Transistor device with (anti)ferroelectric spacer structures

Piezo-resistive transistor based resonator with ferroelectric gate...

Magnetic memory device with ruthenium diffusion barrier

Trench capacitor with extended dielectric layer

Antiferromagnet based spin orbit torque memory device

Transistor device with variously conformal gate dielectric layers

Ferroelectric resonator

Perpendicular spin injection via spatial modulation of spin orbit c...

Transistor structures formed with 2DEG at complex oxide interfaces

Spin orbit torque memory devices and methods of fabrication

Insertion layer between spin hall effect or spin orbit torque elect...

Patents Applicationslast 30 patents

INTEGRATED CIRCUIT STRUCTURE WITH DEEP VIA BAR WIDTH TUNING

BACKSIDE POWER GATING

METHOD OF FABRICATING A 2D CHANNEL TRANSISTOR BY EMPLOYING SELECTIV...

TRANSITION METAL DICHALCOGENIDE MONOLAYER TRANSFER USING LOW STRAIN...

INTEGRATED CIRCUIT STRUCTURES WITH INTERNAL SPACERS FOR 2D CHANNEL...

TRANSISTOR COMPRISING A COMPOSITE GATE DIELECTRIC STRUCTURE AND MET...

TRENCH CONTACT STRUCTURE WITH ETCH-STOP LAYER

MULTIPLE VOLTAGE THRESHOLD INTEGRATED CIRCUIT STRUCTURE WITH LOCAL...

INTEGRATED CIRCUIT STRUCTURES HAVING REDUCED LOCAL LAYOUT EFFECTS

DIELECTRIC ISOLATION BETWEEN EPITAXIAL REGIONS AND SUBFIN REGIONS

CAPACITORS FOR USE WITH INTEGRATED CIRCUIT PACKAGES

ARCHITECTURES AND METHODS TO MODULATE CONTACT RESISTANCE IN 2D MATE...

AIRGAP SPACER BETWEEN GATE ELECTRODE AND SOURCE OR DRAIN CONTACT

VIA STRUCTURE WITH IMPROVED SUBSTRATE GROUNDING

INTEGRATED CIRCUIT STRUCTURES WITH PATCH SPACERS

THROUGH-GATE STRUCTURE WITH AN AIRGAP SPACER IN A SEMICONDUCTOR DEVICE

FERROELECTRIC CAPACITOR WITH INSULATING THIN FILM

PERFORMANCE OPTIMIZATION OF TRANSISTORS SHARING CHANNEL STRUCTURES...

LONG CHANNEL FIN TRANSISTORS IN NANORIBBON-BASED DEVICES

SEEDED GROWTH FOR 2D NANORIBBON TRANSISTORS

BEOL CONTACT METALS FOR 2D TRANSISTORS

TRANSISTOR WITH CHANNEL MATERIAL IN A STACK WITH INSULATOR MATERIAL...

PASSIVATION OF CRYSTALLINE SUBSTRATE FOR METAL CHALCOGEN MATERIAL S...

2D NANORIBBONS UTILIZING SILICON SCAFFOLDING

TRANSFER-FREE 2D FET AND FEFET DEVICE FABRICATION BY 2D MATERIAL GR...

SELECTIVE GATE OXIDE FORMATION ON 2D MATERIAL BASED TRANSISTOR DEVICES

PROBABILISTIC AND DETERMINISTIC LOGIC DEVICES WITH REDUCED SYMMETRY...

TMD INVERTED NANOWIRE INTEGRATION

MAGNETOELECTRIC LOGIC WITH MAGNETIC TUNNEL JUNCTIONS

DEVICE, METHOD AND SYSTEM TO PROVIDE A RANDOM ACCESS MEMORY WITH A...