Chia-Ching Lin

Person

West Lafayette, IN, US

People

Patents Grantslast 30 patents

Information Patent Grant
Piezo-resistive transistor based resonator with anti-ferroelectric...
- Patent number 12,125,893
- Issue date Oct 22, 2024
- Intel Corporation
- Tanay Gosavi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transition metal dichalcogenide (TMD) layer stack for transistor ap...
- Patent number 12,125,895
- Issue date Oct 22, 2024
- Intel Corporation
- Chelsey Dorow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Piezo-resistive transistor based resonator with ferroelectric gate...
- Patent number 12,113,117
- Issue date Oct 8, 2024
- Intel Corporation
- Tanay Gosavi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystalline bottom electrode for perovskite capacitors and methods...
- Patent number 12,100,731
- Issue date Sep 24, 2024
- Intel Corporation
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric or anti-ferroelectric trench capacitor with spacers f...
- Patent number 12,040,378
- Issue date Jul 16, 2024
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transition metal dichalcogenide based spin orbit torque memory device
- Patent number 12,009,018
- Issue date Jun 11, 2024
- Intel Corporation
- Chia-Ching Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cells with ferroelectric capacitors separate from transistor...
- Patent number 11,980,037
- Issue date May 7, 2024
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
TMD inverted nanowire integration
- Patent number 11,935,956
- Issue date Mar 19, 2024
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MFM capacitor and process for forming such
- Patent number 11,901,400
- Issue date Feb 13, 2024
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nano-rod spin orbit coupling based magnetic random access memory wi...
- Patent number 11,818,963
- Issue date Nov 14, 2023
- Intel Corporation
- Sasikanth Manipatruni
- G11 - INFORMATION STORAGE
Information Patent Grant
MFM capacitor with multilayered oxides and metals and processes for...
- Patent number 11,769,789
- Issue date Sep 26, 2023
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer high-k gate dielectric for a high performance logic tran...
- Patent number 11,742,407
- Issue date Aug 29, 2023
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transition metal dichalcogenide based magnetoelectric memory device
- Patent number 11,696,514
- Issue date Jul 4, 2023
- Intel Corporation
- Chia-Ching Lin
Information Patent Grant
Spin orbit coupling memory device with top spin orbit coupling elec...
- Patent number 11,665,975
- Issue date May 30, 2023
- Intel Corporation
- Tanay Gosavi
- G11 - INFORMATION STORAGE
Information Patent Grant
Piezo-resistive transistor based resonator with anti-ferroelectric...
- Patent number 11,646,356
- Issue date May 9, 2023
- Intel Corporation
- Tanay Gosavi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device with (anti)ferroelectric spacer structures
- Patent number 11,640,984
- Issue date May 2, 2023
- Intel Corporation
- Jack Kavalieros
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Piezo-resistive transistor based resonator with ferroelectric gate...
- Patent number 11,637,191
- Issue date Apr 25, 2023
- Intel Corporation
- Tanay Gosavi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory device with ruthenium diffusion barrier
- Patent number 11,626,451
- Issue date Apr 11, 2023
- Intel Corporation
- Emily Walker
- G11 - INFORMATION STORAGE
Information Patent Grant
Trench capacitor with extended dielectric layer
- Patent number 11,626,475
- Issue date Apr 11, 2023
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Antiferromagnet based spin orbit torque memory device
- Patent number 11,621,391
- Issue date Apr 4, 2023
- Intel Corporation
- Chia-Ching Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Transistor device with variously conformal gate dielectric layers
- Patent number 11,616,130
- Issue date Mar 28, 2023
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric resonator
- Patent number 11,605,624
- Issue date Mar 14, 2023
- Intel Corporation
- Tanay Gosavi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular spin injection via spatial modulation of spin orbit c...
- Patent number 11,594,270
- Issue date Feb 28, 2023
- Intel Corporation
- Tanay Gosavi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structures formed with 2DEG at complex oxide interfaces
- Patent number 11,594,624
- Issue date Feb 28, 2023
- Intel Corporation
- Sasikanth Manipatruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin orbit torque memory devices and methods of fabrication
- Patent number 11,574,666
- Issue date Feb 7, 2023
- Intel Corporation
- Tanay Gosavi
- G11 - INFORMATION STORAGE
Information Patent Grant
Insertion layer between spin hall effect or spin orbit torque elect...
- Patent number 11,575,083
- Issue date Feb 7, 2023
- Intel Corporation
- Tanay Gosavi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Transition metal dichalcogenide based spin orbit torque memory devi...
- Patent number 11,557,717
- Issue date Jan 17, 2023
- Intel Corporation
- Chia-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-dense ferroelectric memory with self-aligned patterning
- Patent number 11,532,439
- Issue date Dec 20, 2022
- Intel Corporation
- Chia-Ching Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus and method for boosting signal in magnetoelectric spin or...
- Patent number 11,502,188
- Issue date Nov 15, 2022
- Intel Corporation
- Chia-Ching Lin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Multilayer free magnetic layer structure for spin-based magnetic me...
- Patent number 11,430,942
- Issue date Aug 30, 2022
- Intel Corporation
- Kaan Oguz
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
LONG CHANNEL FIN TRANSISTORS IN NANORIBBON-BASED DEVICES
- Publication number 20240321987
- Publication date Sep 26, 2024
- Intel Corporation
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEEDED GROWTH FOR 2D NANORIBBON TRANSISTORS
- Publication number 20240222428
- Publication date Jul 4, 2024
- Intel Corporation
- Chelsey Dorow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BEOL CONTACT METALS FOR 2D TRANSISTORS
- Publication number 20240222461
- Publication date Jul 4, 2024
- Intel Corporation
- Ande Kitamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH CHANNEL MATERIAL IN A STACK WITH INSULATOR MATERIAL...
- Publication number 20240222484
- Publication date Jul 4, 2024
- Intel Corporation
- Chia-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVATION OF CRYSTALLINE SUBSTRATE FOR METAL CHALCOGEN MATERIAL S...
- Publication number 20240222113
- Publication date Jul 4, 2024
- Intel Corporation
- Carl H. Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE GATE OXIDE FORMATION ON 2D MATERIAL BASED TRANSISTOR DEVICES
- Publication number 20240222441
- Publication date Jul 4, 2024
- Intel Corporation
- Mahmut Sami Kavrik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
2D NANORIBBONS UTILIZING SILICON SCAFFOLDING
- Publication number 20240222483
- Publication date Jul 4, 2024
- Intel Corporation
- Carl H. Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSFER-FREE 2D FET AND FEFET DEVICE FABRICATION BY 2D MATERIAL GR...
- Publication number 20240222485
- Publication date Jul 4, 2024
- Intel Corporation
- Mahmut Sami Kavrik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROBABILISTIC AND DETERMINISTIC LOGIC DEVICES WITH REDUCED SYMMETRY...
- Publication number 20240206348
- Publication date Jun 20, 2024
- Intel Corporation
- Punyashloka Debashis
- G11 - INFORMATION STORAGE
Information Patent Application
TMD INVERTED NANOWIRE INTEGRATION
- Publication number 20240186416
- Publication date Jun 6, 2024
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETOELECTRIC LOGIC WITH MAGNETIC TUNNEL JUNCTIONS
- Publication number 20240147867
- Publication date May 2, 2024
- Intel Corporation
- Punyashloka Debashis
- G11 - INFORMATION STORAGE
Information Patent Application
DEVICE, METHOD AND SYSTEM TO PROVIDE A RANDOM ACCESS MEMORY WITH A...
- Publication number 20240112730
- Publication date Apr 4, 2024
- Intel Corporation
- Sou-Chi Chang
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY ARRAY COMPRISING A FERROELECTRIC DATA STORAGE ELEMENT
- Publication number 20240112731
- Publication date Apr 4, 2024
- Intel Corporation
- Sou-Chi Chang
- G11 - INFORMATION STORAGE
Information Patent Application
NECKED RIBBON FOR BETTER N WORKFUNCTION FILLING AND DEVICE PERFORMANCE
- Publication number 20240105770
- Publication date Mar 28, 2024
- Intel Corporation
- Tao CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES WITH PROTECTION LINER BETWEEN DOPED SEMI...
- Publication number 20240105718
- Publication date Mar 28, 2024
- Intel Corporation
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BARRIER LAYER FOR DIELECTRIC RECESS MITIGATION
- Publication number 20240088217
- Publication date Mar 14, 2024
- Intel Corporation
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL REGIONS EXTENDING BETWEEN INNER GATE SPACERS
- Publication number 20240088265
- Publication date Mar 14, 2024
- Intel Corporation
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN TRIM PLUG STRUCTURES WITH METAL FOR IMPARTING CHANNEL STRESS
- Publication number 20240088292
- Publication date Mar 14, 2024
- Intel Corporation
- Tao CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK-END-OF-LINE 2D TRANSISTOR
- Publication number 20240006521
- Publication date Jan 4, 2024
- Intel Corporation
- Chia-Ching LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT ARCHITECTURE FOR 2D STACKED NANORIBBON TRANSISTOR
- Publication number 20240006484
- Publication date Jan 4, 2024
- Intel Corporation
- Ashish Verma PENUMATCHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ALTERNATING SACRIFICIAL LAYER MATERIALS FOR MECHANICALLY STABLE 2D...
- Publication number 20240006481
- Publication date Jan 4, 2024
- Intel Corporation
- Chelsey DOROW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK-END-OF-LINE 2D MEMORY CELL
- Publication number 20240008290
- Publication date Jan 4, 2024
- Intel Corporation
- Chia-Ching LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ASSEMBLED MONOLAYER ON A DIELECTRIC FOR TRANSITION METAL DICHA...
- Publication number 20230420510
- Publication date Dec 28, 2023
- Intel Corporation
- Carl H. NAYLOR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
2D LAYERED GATE OXIDE
- Publication number 20230420514
- Publication date Dec 28, 2023
- Intel Corporation
- Chelsey DOROW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED SINGLE CRYSTAL TRANSITION-METAL DICHALCOGENIDE USING SEEDED...
- Publication number 20230420511
- Publication date Dec 28, 2023
- Intel Corporation
- Carl H. NAYLOR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL INSULATOR METAL (MIM) CAPACITOR ARCHITECTURES
- Publication number 20230411443
- Publication date Dec 21, 2023
- Intel Corporation
- Kaan OGUZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL INSULATOR METAL (MIM) CAPACITOR ARCHITECTURES
- Publication number 20230411278
- Publication date Dec 21, 2023
- Intel Corporation
- Chia-Ching LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VALLEYTRONIC LOGIC DEVICES COMPRISING MONOCHALCOGENIDES
- Publication number 20230413684
- Publication date Dec 21, 2023
- Intel Corporation
- Punyashloka Debashis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PEROVSKITE-BASED MAGNETOELECTRIC SPIN-ORBIT LOGIC DEVICES
- Publication number 20230353157
- Publication date Nov 2, 2023
- Tanay A. Gosavi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR TRANSISTORS WITH A FERROELECTRIC GATE DIELECTRIC
- Publication number 20230352584
- Publication date Nov 2, 2023
- Dmitri Evgenievich Nikonov
- H01 - BASIC ELECTRIC ELEMENTS

Chia-Ching Lin

Person

Patents Grantslast 30 patents

Piezo-resistive transistor based resonator with anti-ferroelectric...

Transition metal dichalcogenide (TMD) layer stack for transistor ap...

Piezo-resistive transistor based resonator with ferroelectric gate...

Crystalline bottom electrode for perovskite capacitors and methods...

Ferroelectric or anti-ferroelectric trench capacitor with spacers f...

Transition metal dichalcogenide based spin orbit torque memory device

Memory cells with ferroelectric capacitors separate from transistor...

TMD inverted nanowire integration

MFM capacitor and process for forming such

Nano-rod spin orbit coupling based magnetic random access memory wi...

MFM capacitor with multilayered oxides and metals and processes for...

Multilayer high-k gate dielectric for a high performance logic tran...

Transition metal dichalcogenide based magnetoelectric memory device

Spin orbit coupling memory device with top spin orbit coupling elec...

Piezo-resistive transistor based resonator with anti-ferroelectric...

Transistor device with (anti)ferroelectric spacer structures

Piezo-resistive transistor based resonator with ferroelectric gate...

Magnetic memory device with ruthenium diffusion barrier

Trench capacitor with extended dielectric layer

Antiferromagnet based spin orbit torque memory device

Transistor device with variously conformal gate dielectric layers

Ferroelectric resonator

Perpendicular spin injection via spatial modulation of spin orbit c...

Transistor structures formed with 2DEG at complex oxide interfaces

Spin orbit torque memory devices and methods of fabrication

Insertion layer between spin hall effect or spin orbit torque elect...

Transition metal dichalcogenide based spin orbit torque memory devi...

Ultra-dense ferroelectric memory with self-aligned patterning

Apparatus and method for boosting signal in magnetoelectric spin or...

Multilayer free magnetic layer structure for spin-based magnetic me...

Patents Applicationslast 30 patents

LONG CHANNEL FIN TRANSISTORS IN NANORIBBON-BASED DEVICES

SEEDED GROWTH FOR 2D NANORIBBON TRANSISTORS

BEOL CONTACT METALS FOR 2D TRANSISTORS

TRANSISTOR WITH CHANNEL MATERIAL IN A STACK WITH INSULATOR MATERIAL...

PASSIVATION OF CRYSTALLINE SUBSTRATE FOR METAL CHALCOGEN MATERIAL S...

SELECTIVE GATE OXIDE FORMATION ON 2D MATERIAL BASED TRANSISTOR DEVICES

2D NANORIBBONS UTILIZING SILICON SCAFFOLDING

TRANSFER-FREE 2D FET AND FEFET DEVICE FABRICATION BY 2D MATERIAL GR...

PROBABILISTIC AND DETERMINISTIC LOGIC DEVICES WITH REDUCED SYMMETRY...

TMD INVERTED NANOWIRE INTEGRATION

MAGNETOELECTRIC LOGIC WITH MAGNETIC TUNNEL JUNCTIONS

DEVICE, METHOD AND SYSTEM TO PROVIDE A RANDOM ACCESS MEMORY WITH A...

MEMORY ARRAY COMPRISING A FERROELECTRIC DATA STORAGE ELEMENT

NECKED RIBBON FOR BETTER N WORKFUNCTION FILLING AND DEVICE PERFORMANCE

INTEGRATED CIRCUIT DEVICES WITH PROTECTION LINER BETWEEN DOPED SEMI...

BARRIER LAYER FOR DIELECTRIC RECESS MITIGATION

EPITAXIAL REGIONS EXTENDING BETWEEN INNER GATE SPACERS

FIN TRIM PLUG STRUCTURES WITH METAL FOR IMPARTING CHANNEL STRESS

BACK-END-OF-LINE 2D TRANSISTOR

CONTACT ARCHITECTURE FOR 2D STACKED NANORIBBON TRANSISTOR

ALTERNATING SACRIFICIAL LAYER MATERIALS FOR MECHANICALLY STABLE 2D...

BACK-END-OF-LINE 2D MEMORY CELL

SELF-ASSEMBLED MONOLAYER ON A DIELECTRIC FOR TRANSITION METAL DICHA...

2D LAYERED GATE OXIDE

STACKED SINGLE CRYSTAL TRANSITION-METAL DICHALCOGENIDE USING SEEDED...

METAL INSULATOR METAL (MIM) CAPACITOR ARCHITECTURES

METAL INSULATOR METAL (MIM) CAPACITOR ARCHITECTURES

VALLEYTRONIC LOGIC DEVICES COMPRISING MONOCHALCOGENIDES

PEROVSKITE-BASED MAGNETOELECTRIC SPIN-ORBIT LOGIC DEVICES

TECHNOLOGIES FOR TRANSISTORS WITH A FERROELECTRIC GATE DIELECTRIC