Chienfan Yu

Person

Highland Mills, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
High-K and metal filled trench-type EDRAM capacitor with electrode...
- Patent number 9,059,194
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Colin J. Brodsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of reducing erosion of a nitride gate cap layer during react...
- Patent number 6,960,523
- Issue date Nov 1, 2005
- Infineon Technolgies AG
- Michael Maldei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced cap layer erosion for borderless contacts
- Patent number 6,890,815
- Issue date May 10, 2005
- Infineon Technologies AG
- Johnathan Faltermeier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vapor phase etch trim structure with top etch blocking layer
- Patent number 6,884,734
- Issue date Apr 26, 2005
- International Business Machines Corporation
- Frederick W. Buehrer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate linewidth tailoring and critical dimension control for sub-100...
- Patent number 6,864,041
- Issue date Mar 8, 2005
- International Business Machines Corporation
- Jeffrey J. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective nitride: oxide anisotropic etch process
- Patent number 6,656,375
- Issue date Dec 2, 2003
- International Business Machines Corporation
- Michael D. Armacost
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wet etch reduction of gate widths
- Patent number 6,617,085
- Issue date Sep 9, 2003
- International Business Machines Corporation
- Babar A. Kanh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to controllably form notched polysilicon gate structures
- Patent number 6,541,320
- Issue date Apr 1, 2003
- International Business Machines Corporation
- Jeffrey Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual layer hard mask for eDRAM gate etch process
- Patent number 6,518,151
- Issue date Feb 11, 2003
- International Business Machines Corporation
- David Mark Dobuzinsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of notched gates by passivating partially etched gate s...
- Patent number 6,509,219
- Issue date Jan 21, 2003
- International Business Machines Corporation
- Len Y. Tsou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual mask process for semiconductor devices
- Patent number 6,429,067
- Issue date Aug 6, 2002
- International Business Machines Corporation
- Joyce C. Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Endpoint detection by chemical reaction
- Patent number 6,419,785
- Issue date Jul 16, 2002
- International Business Machines Corporation
- Leping Li
- B24 - GRINDING POLISHING
Information Patent Grant
Selective dry etch of a dielectric film
- Patent number 6,294,102
- Issue date Sep 25, 2001
- International Business Machines Corporation
- Delores A. Bennett
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Endpoint detection by chemical reaction and photoionization
- Patent number 6,228,769
- Issue date May 8, 2001
- International Business Machines Corporation
- Leping Li
- B24 - GRINDING POLISHING
Information Patent Grant
Endpoint detection by chemical reaction
- Patent number 6,180,422
- Issue date Jan 30, 2001
- International Business Machines Corporation
- Leping Li
- B24 - GRINDING POLISHING
Information Patent Grant
Vapor phase etching of oxide masked by resist or masking material
- Patent number 6,074,951
- Issue date Jun 13, 2000
- International Business Machines Corporation
- Richard L. Kleinhenz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of patterning sidewalls of a trench in integrated circuit ma...
- Patent number 6,071,815
- Issue date Jun 6, 2000
- International Business Machines Corporation
- Richard L. Kleinhenz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Indirect endpoint detection by chemical reaction
- Patent number 6,066,564
- Issue date May 23, 2000
- International Business Machines Corporation
- Leping Li
- B24 - GRINDING POLISHING
Information Patent Grant
Method for cleaning the surface of a dielectric
- Patent number 6,054,328
- Issue date Apr 25, 2000
- International Business Machines Corporation
- Peter R. Duncombe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide layer patterned by vapor phase etching
- Patent number 5,876,879
- Issue date Mar 2, 1999
- International Business Machines Corporation
- Richard L. Kleinhenz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench sidewall patterned by vapor phase etching
- Patent number 5,838,055
- Issue date Nov 17, 1998
- International Business Machines Corporation
- Richard L. Kleinhenz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Film removal by chemical transformation and aerosol clean
- Patent number 5,792,275
- Issue date Aug 11, 1998
- International Business Machines Corporation
- Wesley Charles Natzle
- B08 - CLEANING
Information Patent Grant
Oxide strip that improves planarity
- Patent number 5,766,971
- Issue date Jun 16, 1998
- International Business Machines Corporation
- David C. Ahlgren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sealed chamber with heating lamps provided within transparent tubes
- Patent number 5,636,320
- Issue date Jun 3, 1997
- International Business Machines Corporation
- Chienfan Yu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Supersonic molecular beam etching of surfaces
- Patent number 5,423,940
- Issue date Jun 13, 1995
- International Business Machines Corporation
- Lee Chen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Supersonic molecular beam etching of surfaces
- Patent number 5,286,331
- Issue date Feb 15, 1994
- International Business Machines Corporation
- Lee Chen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Device and method for accurate etching and removal of thin film
- Patent number 5,282,925
- Issue date Feb 1, 1994
- International Business Machines Corporation
- Shwu-Jen Jeng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH-K AND METAL FILLED TRENCH-TYPE EDRAM CAPACITOR WITH ELECTRODE...
- Publication number 20150102463
- Publication date Apr 16, 2015
- International Business Machines Corporation
- Colin J. Brodsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-K and Metal Filled Trench-Type EDRAM Capacitor with Electrode...
- Publication number 20140191366
- Publication date Jul 10, 2014
- International Business Machines Corporation
- Colin J. Brodsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A GATE STRUCTURE
- Publication number 20090311855
- Publication date Dec 17, 2009
- Richard A. Bruff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ADVANCED CORRELATION AND PROCESS WINDOW EVALUATION APPLICATION
- Publication number 20090119357
- Publication date May 7, 2009
- International Business Machines Corporation
- James P. Rice
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHOD OF FABRICATING A GATE STRUCTURE AND THE STRUCTURE THEREOF
- Publication number 20090101980
- Publication date Apr 23, 2009
- International Business Machines Corporation
- Richard A. Bruff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED CAP LAYER EROSION FOR BORDERLESS CONTACTS
- Publication number 20050051839
- Publication date Mar 10, 2005
- Johnathan Faltermeier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vapor phase etch trim structure with top etch blocking layer
- Publication number 20040198030
- Publication date Oct 7, 2004
- International Business Machines Corporation
- Frederick W. Buehrer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of reducing erosion of a nitride gate cap layer during react...
- Publication number 20040195607
- Publication date Oct 7, 2004
- Infineon Technologies North America Corp.
- Michael Maldei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL LAYER HARD MASK FOR EDRAM GATE ETCH PROCESS
- Publication number 20030032269
- Publication date Feb 13, 2003
- International Business Machines Corporation
- David Mark Dobuzinsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO CONTROLLABLY FORM NOTCHED POLYSILICON GATE STRUCTURES
- Publication number 20030032225
- Publication date Feb 13, 2003
- International Business Machines Corporation
- Jeffery Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate linewidth tailoring and critical dimension control for sub-100...
- Publication number 20020164546
- Publication date Nov 7, 2002
- International Business Machines Corporation
- Jeffrey J. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication of notched gates by passivating partially etched gate s...
- Publication number 20020132437
- Publication date Sep 19, 2002
- International Business Machines Corporation
- Len Y. Tsou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL MASK PROCESS FOR SEMICONDUCTOR DEVICES
- Publication number 20020094637
- Publication date Jul 18, 2002
- International Business Machines Corporation
- Joyce C. Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for preparing the surface of a dielectric
- Publication number 20010016226
- Publication date Aug 23, 2001
- International Business Machines Corporation
- Wesley Natzle
- H01 - BASIC ELECTRIC ELEMENTS

Chienfan Yu

Person

Patents Grantslast 30 patents

High-K and metal filled trench-type EDRAM capacitor with electrode...

Method of reducing erosion of a nitride gate cap layer during react...

Reduced cap layer erosion for borderless contacts

Vapor phase etch trim structure with top etch blocking layer

Gate linewidth tailoring and critical dimension control for sub-100...

Selective nitride: oxide anisotropic etch process

Wet etch reduction of gate widths

Method to controllably form notched polysilicon gate structures

Dual layer hard mask for eDRAM gate etch process

Fabrication of notched gates by passivating partially etched gate s...

Dual mask process for semiconductor devices

Endpoint detection by chemical reaction

Selective dry etch of a dielectric film

Endpoint detection by chemical reaction and photoionization

Endpoint detection by chemical reaction

Vapor phase etching of oxide masked by resist or masking material

Method of patterning sidewalls of a trench in integrated circuit ma...

Indirect endpoint detection by chemical reaction

Method for cleaning the surface of a dielectric

Oxide layer patterned by vapor phase etching

Trench sidewall patterned by vapor phase etching

Film removal by chemical transformation and aerosol clean

Oxide strip that improves planarity

Sealed chamber with heating lamps provided within transparent tubes

Supersonic molecular beam etching of surfaces

Supersonic molecular beam etching of surfaces

Device and method for accurate etching and removal of thin film

Patents Applicationslast 30 patents

HIGH-K AND METAL FILLED TRENCH-TYPE EDRAM CAPACITOR WITH ELECTRODE...

High-K and Metal Filled Trench-Type EDRAM Capacitor with Electrode...

METHOD OF FABRICATING A GATE STRUCTURE

ADVANCED CORRELATION AND PROCESS WINDOW EVALUATION APPLICATION

METHOD OF FABRICATING A GATE STRUCTURE AND THE STRUCTURE THEREOF

REDUCED CAP LAYER EROSION FOR BORDERLESS CONTACTS

Vapor phase etch trim structure with top etch blocking layer

Method of reducing erosion of a nitride gate cap layer during react...

DUAL LAYER HARD MASK FOR EDRAM GATE ETCH PROCESS

METHOD TO CONTROLLABLY FORM NOTCHED POLYSILICON GATE STRUCTURES

Gate linewidth tailoring and critical dimension control for sub-100...

Fabrication of notched gates by passivating partially etched gate s...

DUAL MASK PROCESS FOR SEMICONDUCTOR DEVICES

Method for preparing the surface of a dielectric