Chit Hwei Ng

Person

Singapore, SG

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated circuit system with hierarchical capacitor and method of...
- Patent number 8,021,954
- Issue date Sep 20, 2011
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Shao-fu Sanford Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form both high and low-k materials over the same dielectr...
- Patent number 7,323,736
- Issue date Jan 29, 2008
- Chartered Semiconductor Manufacturing Ltd.
- Pradeep Yelehanka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process to reduce substrate effects by forming channels under induc...
- Patent number 7,250,669
- Issue date Jul 31, 2007
- Chartered Semiconductor Manufacturing Ltd.
- Lap Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Adjustable 3D capacitor
- Patent number 7,067,869
- Issue date Jun 27, 2006
- Chartered Semiconductor Manufacturing Ltd.
- Wei Hua Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form both high and low-k materials over the same dielectr...
- Patent number 7,060,193
- Issue date Jun 13, 2006
- Chartered Semiconductor Manufacturing Ltd.
- Pradeep Yelehanka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and process for a capacitor and other devices
- Patent number 6,902,981
- Issue date Jun 7, 2005
- Chartered Semiconductor Manufacturing Ltd.
- Chit Hwei Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to fill a trench and tunnel by using ALD seed layer and elec...
- Patent number 6,903,013
- Issue date Jun 7, 2005
- Chartered Semiconductor Manufacturing Ltd.
- Lap Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process to reduce substrate effects by forming channels under induc...
- Patent number 6,869,884
- Issue date Mar 22, 2005
- Chartered Semiconductor Manufacturing Ltd.
- Lap Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an inductor with continuous metal deposition
- Patent number 6,852,605
- Issue date Feb 8, 2005
- Chartered Semiconductor Manufacturing Ltd.
- Chit Hwei Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of blocking nitrogen from thick gate oxide during dual gate CMP
- Patent number 6,821,904
- Issue date Nov 23, 2004
- Chartered Semiconductor Manufacturing Ltd.
- Yelehanka Ramachandramurthy Pradeep
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MIM and metal resistor formation at CU beol using only one extra mask
- Patent number 6,730,573
- Issue date May 4, 2004
- Chartered Semiconductor Manufacturing Ltd.
- Chit Hwei Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a surface coating layer within an opening within...
- Patent number 6,716,693
- Issue date Apr 6, 2004
- Chartered Semiconductor Manufacturing Ltd.
- Lap Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a metal-insulator-metal (MIM) capacitor and metal...
- Patent number 6,709,918
- Issue date Mar 23, 2004
- Chartered Semiconductor Manufacturing Ltd.
- Chit Hwei Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Adjustable 3D capacitor
- Patent number 6,689,643
- Issue date Feb 10, 2004
- Chartered Semiconductor Manufacturing Ltd.
- Wei Hua Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for an advanced MIM capacitor
- Patent number 6,670,237
- Issue date Dec 30, 2003
- Chartered Semiconductor Manufacturing Ltd.
- Wye Boon Loh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to fabricate MIM capacitor using damascene process
- Patent number 6,645,810
- Issue date Nov 11, 2003
- Chartered Semiconductors Manufacturing Limited
- Chit Hwei Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-integrated vertical MIM capacitor in the dual damascene process
- Patent number 6,624,040
- Issue date Sep 23, 2003
- Chartered Semiconductor Manufacturing Ltd.
- Chit Hwei Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device for reducing capacitive and magnetic effects from...
- Patent number 6,608,362
- Issue date Aug 19, 2003
- Chartered Semiconductor Manufacturing Ltd.
- Shao Kai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to fabricate MIM capacitor with a curvillnear surface using...
- Patent number 6,548,367
- Issue date Apr 15, 2003
- Chartered Semiconductor Manufacturing Limited
- Chit Hwei Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Damascene MIM capacitor with a curvilinear surface structure
- Patent number 6,528,838
- Issue date Mar 4, 2003
- Chartered Semiconductors Manufacturing Limited
- Chit Hwei Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to fabricate dual-metal CMOS transistors for sub-0.1 &#x03BC...
- Patent number 6,410,376
- Issue date Jun 25, 2002
- Chartered Semiconductor Manufacturing Ltd.
- Chit Hwei Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form fuse using polymeric films
- Patent number 6,375,857
- Issue date Apr 23, 2002
- Chartered Semiconductor Manufacturing Ltd.
- Chit Hwei Ng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CIRCUIT SYSTEM WITH HIERARCHICAL CAPACITOR AND METHOD OF...
- Publication number 20100295153
- Publication date Nov 25, 2010
- Chartered Semiconductor Manufacturing LTD.
- Shao-fu Sanford Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MODULAR & SCALABLE INTRA-METAL CAPACITORS
- Publication number 20100038752
- Publication date Feb 18, 2010
- CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.
- Chit Hwei NG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating circular or angular spiral MIM capacitors
- Publication number 20050086780
- Publication date Apr 28, 2005
- Chartered Semiconductor Manufacturing Ltd.
- Kai Shao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process to reduce substrate effects by forming channels under induc...
- Publication number 20050009357
- Publication date Jan 13, 2005
- Chartered Semiconductor Manufacturing Ltd.
- Lap Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming an inductor with continuous metal deposition
- Publication number 20040217440
- Publication date Nov 4, 2004
- Chartered Semiconductor Manufacturing Ltd.
- Chit Hwei Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Adjustable 3D capacitor
- Publication number 20040147087
- Publication date Jul 29, 2004
- Chartered Semiconductor Manufacturing Ltd.
- Wei Hua Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIM AND METAL RESISTOR FORMATION AT CU BEOL USING ONLY ONE EXTRA MASK
- Publication number 20040087098
- Publication date May 6, 2004
- Chartered Semiconductor Manufacturing Ltd.
- Chit Hwei Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and process for a capacitor and other devices
- Publication number 20040072406
- Publication date Apr 15, 2004
- Chit Hwei Ng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process to reduce substrate effects by forming channels under induc...
- Publication number 20040038542
- Publication date Feb 26, 2004
- Chartered Semiconductor Manufacturing Ltd.
- Lap Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of blocking nitrogen from thick gate oxide during dual gate CMP
- Publication number 20040023506
- Publication date Feb 5, 2004
- Chartered Semiconductor Manufacturing Ltd.
- Yelehanka Ramachandramurthy Pradeep
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Adjustable 3D capacitor
- Publication number 20030201476
- Publication date Oct 30, 2003
- Chartered Semiconductor Manufacturing Ltd.
- Wei Hua Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to fabricate NIM capacitor using damascene process
- Publication number 20030092259
- Publication date May 15, 2003
- CHARTERED SEMICONDUCTORS MANUFACTURED LIMITED
- Chit Hwei Ng
- H01 - BASIC ELECTRIC ELEMENTS

Chit Hwei Ng

Person

Patents Grantslast 30 patents

Integrated circuit system with hierarchical capacitor and method of...

Method to form both high and low-k materials over the same dielectr...

Process to reduce substrate effects by forming channels under induc...

Adjustable 3D capacitor

Method to form both high and low-k materials over the same dielectr...

Structure and process for a capacitor and other devices

Method to fill a trench and tunnel by using ALD seed layer and elec...

Process to reduce substrate effects by forming channels under induc...

Method of forming an inductor with continuous metal deposition

Method of blocking nitrogen from thick gate oxide during dual gate CMP

MIM and metal resistor formation at CU beol using only one extra mask

Method of forming a surface coating layer within an opening within...

Method for making a metal-insulator-metal (MIM) capacitor and metal...

Adjustable 3D capacitor

Method for an advanced MIM capacitor

Method to fabricate MIM capacitor using damascene process

Self-integrated vertical MIM capacitor in the dual damascene process

Method and device for reducing capacitive and magnetic effects from...

Method to fabricate MIM capacitor with a curvillnear surface using...

Damascene MIM capacitor with a curvilinear surface structure

Method to fabricate dual-metal CMOS transistors for sub-0.1 &#x03BC...

Method to form fuse using polymeric films

Patents Applicationslast 30 patents

INTEGRATED CIRCUIT SYSTEM WITH HIERARCHICAL CAPACITOR AND METHOD OF...

MODULAR & SCALABLE INTRA-METAL CAPACITORS

Method of fabricating circular or angular spiral MIM capacitors

Process to reduce substrate effects by forming channels under induc...

Method of forming an inductor with continuous metal deposition

Adjustable 3D capacitor

MIM AND METAL RESISTOR FORMATION AT CU BEOL USING ONLY ONE EXTRA MASK

Structure and process for a capacitor and other devices

Process to reduce substrate effects by forming channels under induc...

Method of blocking nitrogen from thick gate oxide during dual gate CMP

Adjustable 3D capacitor

Method to fabricate NIM capacitor using damascene process