Christopher Boguslaw Kocon

Person

Mountain Top, PA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor on insulator on wide band-gap semiconductor
- Patent number 12,009,421
- Issue date Jun 11, 2024
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Drain extended transistor with trench gate
- Patent number 11,621,347
- Issue date Apr 4, 2023
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor on insulator on wide band-gap semiconductor
- Patent number 11,569,378
- Issue date Jan 31, 2023
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid semiconductor device
- Patent number 11,557,673
- Issue date Jan 17, 2023
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated channel diode
- Patent number 11,444,191
- Issue date Sep 13, 2022
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Active monolithic snubber design
- Patent number 11,239,744
- Issue date Feb 1, 2022
- Texas Instruments Incorporated
- Christopher Kocon
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Transistor with integrated capacitor
- Patent number 11,177,253
- Issue date Nov 16, 2021
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ESD protection device with breakdown voltage stabilization
- Patent number 11,049,853
- Issue date Jun 29, 2021
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Breakdown uniformity for ESD protection device
- Patent number 11,011,510
- Issue date May 18, 2021
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Medium high voltage MOSFET device
- Patent number 10,811,533
- Issue date Oct 20, 2020
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Drain extended transistor with trench gate
- Patent number 10,770,584
- Issue date Sep 8, 2020
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated channel diode
- Patent number 10,741,684
- Issue date Aug 11, 2020
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power transistor with terminal trenches in terminal resurf regions
- Patent number 10,672,901
- Issue date Jun 2, 2020
- Texas Instruments Incorporated
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical high-voltage MOS transistor
- Patent number 10,573,718
- Issue date Feb 25, 2020
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Medium voltage MOSFET device
- Patent number 10,553,717
- Issue date Feb 4, 2020
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple shielding trench gate FET
- Patent number 10,541,326
- Issue date Jan 21, 2020
- Texas Instruments Incorporated
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power transistor with terminal trenches in terminal resurf regions
- Patent number 10,256,337
- Issue date Apr 9, 2019
- Texas Instruments Incorporated
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split-gate lateral extended drain MOS transistor structure and process
- Patent number 9,905,428
- Issue date Feb 27, 2018
- Texas Instruments Incorporated
- Andrew D Strachan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon epitaxy for high aspect ratio, substantially perpendicular...
- Patent number 9,905,638
- Issue date Feb 27, 2018
- Texas Instruments Incorporated
- Tatsuya Tominari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET having dual-gate cells with an integrated channel diode
- Patent number 9,881,995
- Issue date Jan 30, 2018
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple shielding trench gate FET
- Patent number 9,711,639
- Issue date Jul 18, 2017
- Texas Instruments Incorporated
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated termination for multiple trench field plate
- Patent number 9,673,317
- Issue date Jun 6, 2017
- Texas Instruments Incorporated
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench having thick dielectric selectively on bottom portion
- Patent number 9,653,342
- Issue date May 16, 2017
- Texas Instruments Incorporated
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET having dual-gate cells with an integrated channel diode
- Patent number 9,601,612
- Issue date Mar 21, 2017
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET having reduced gate charge
- Patent number 9,583,611
- Issue date Feb 28, 2017
- Texas Instruments Incorporated
- Thomas Eugene Grebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical high-voltage MOS transistor and method of forming the same
- Patent number 9,525,035
- Issue date Dec 20, 2016
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET having reduced gate charge
- Patent number 9,496,388
- Issue date Nov 15, 2016
- Texas Instruments Incorporated
- Thomas Eugene Grebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated channel diode
- Patent number 9,484,450
- Issue date Nov 1, 2016
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated termination for multiple trench field plate
- Patent number 9,450,082
- Issue date Sep 20, 2016
- Texas Instruments Incorporated
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithically integrated active snubber
- Patent number 9,385,216
- Issue date Jul 5, 2016
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICES WITH HIGH CURRENT CAPABILITY FOR ELECTROSTATI...
- Publication number 20230223393
- Publication date Jul 13, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Christopher Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC DISCHARGE PROTECTION DEVICES WITH HIGH CURRENT CAPABI...
- Publication number 20230223395
- Publication date Jul 13, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Sunglyong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ON INSULATOR ON WIDE BAND-GAP SEMICONDUCTOR
- Publication number 20230178649
- Publication date Jun 8, 2023
- TEXAS INSTRUMENTS INCORPORATED
- CHRISTOPHER BOGUSLAW KOCON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID SEMICONDUCTOR DEVICE
- Publication number 20230115019
- Publication date Apr 13, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Christopher Boguslaw KOCON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID COMPONENT WITH SILICON AND WIDE BANDGAP SEMCONDUCTOR MATERIAL
- Publication number 20220271158
- Publication date Aug 25, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID COMPONENT WITH SILICON AND WIDE BANDGAP SEMCONDUCTOR MATERIA...
- Publication number 20220271128
- Publication date Aug 25, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID COMPONENT WITH SILICON AND WIDE BANDGAP SEMCONDUCTOR MATERIA...
- Publication number 20220271159
- Publication date Aug 25, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID SEMICONDUCTOR DEVICE
- Publication number 20220209007
- Publication date Jun 30, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Christopher Boguslaw KOCON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ON INSULATOR ON WIDE BAND-GAP SEMICONDUCTOR
- Publication number 20220199826
- Publication date Jun 23, 2022
- TEXAS INSTRUMENTS INCORPORATED
- CHRISTOPHER BOGUSLAW KOCON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ACTIVE MONOLITHIC SNUBBER DESIGN
- Publication number 20210320583
- Publication date Oct 14, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Christopher Kocon
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
ESD PROTECTION DEVICE WITH BREAKDOWN VOLTAGE STABILIZATION
- Publication number 20210104514
- Publication date Apr 8, 2021
- TEXAS INSTRUMENTS INCORPORATED
- CHRISTOPHER BOGUSLAW KOCON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BREAKDOWN UNIFORMITY FOR ESD PROTECTION DEVICE
- Publication number 20210104513
- Publication date Apr 8, 2021
- TEXAS INSTRUMENTS INCORPORATED
- CHRISTOPHER BOGUSLAW KOCON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CHANNEL DIODE
- Publication number 20200373424
- Publication date Nov 26, 2020
- TEXAS INSTRUMENTS INCORPORATED
- CHRISTOPHER BOGUSLAW KOCON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAIN EXTENDED TRANSISTOR WITH TRENCH GATE
- Publication number 20200365727
- Publication date Nov 19, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAIN EXTENDED TRANSISTOR WITH TRENCH GATE
- Publication number 20200152788
- Publication date May 14, 2020
- TEXAS INSTRUMENTS INCORPORATED
- CHRISTOPHER BOGUSLAW KOCON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH INTEGRATED CAPACITOR
- Publication number 20200152623
- Publication date May 14, 2020
- TEXAS INSTRUMENTS INCORPORATED
- CHRISTOPHER BOGUSLAW KOCON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER TRANSISTOR WITH TERMINAL TRENCHES IN TERMINAL RESURF REGIONS
- Publication number 20190259868
- Publication date Aug 22, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER TRANSISTOR WITH TERMINAL TRENCHES IN TERMINAL RESURF REGIONS
- Publication number 20180226502
- Publication date Aug 9, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multiple Shielding Trench Gate FET
- Publication number 20170288052
- Publication date Oct 5, 2017
- TEXAS INSTRUMENTS INCORPORATED
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH HAVING THICK DIELECTRIC SELECTIVELY ON BOTTOM PORTION
- Publication number 20170222041
- Publication date Aug 3, 2017
- TEXAS INSTRUMENTS INCORPORATED
- HIDEAKI KAWAHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET HAVING DUAL-GATE CELLS WITH AN INTEGRATED CHANNEL DIODE
- Publication number 20170148871
- Publication date May 25, 2017
- TEXAS INSTRUMENTS INCORPORATED
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT-GATE LATERAL EXTENDED DRAIN MOS TRANSISTOR STRUCTURE AND PROCESS
- Publication number 20170125252
- Publication date May 4, 2017
- TEXAS INSTRUMENTS INCORPORATED
- Andrew D. Strachan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL HIGH-VOLTAGE MOS TRANSISTOR
- Publication number 20170062573
- Publication date Mar 2, 2017
- TEXAS INSTRUMENTS INCORPORATED
- CHRISTOPHER BOGUSLAW KOCON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CHANNEL DIODE
- Publication number 20170025525
- Publication date Jan 26, 2017
- TEXAS INSTRUMENTS INCORPORATED
- CHRISTOPHER BOGUSLAW KOCON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED TERMINATION FOR MULTIPLE TRENCH FIELD PLATE
- Publication number 20160359039
- Publication date Dec 8, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Hideaki KAWAHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multiple Shielding Trench Gate FET
- Publication number 20160329423
- Publication date Nov 10, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Medium High Voltage MOSFET Device
- Publication number 20160240653
- Publication date Aug 18, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Christopher Boguslaw KOCON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Medium High Voltage MOSFET Device
- Publication number 20160240667
- Publication date Aug 18, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET Having Dual-Gate Cells with an Integrated Channel Diode
- Publication number 20160204249
- Publication date Jul 14, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench MOSFET Having Reduced Gate Charge
- Publication number 20160197177
- Publication date Jul 7, 2016
- TEXAS INSTRUMENTS INCORPORATED
- THOMAS EUGENE GREBS
- H01 - BASIC ELECTRIC ELEMENTS

Christopher Boguslaw Kocon

Person

Patents Grantslast 30 patents

Semiconductor on insulator on wide band-gap semiconductor

Drain extended transistor with trench gate

Semiconductor on insulator on wide band-gap semiconductor

Hybrid semiconductor device

Integrated channel diode

Active monolithic snubber design

Transistor with integrated capacitor

ESD protection device with breakdown voltage stabilization

Breakdown uniformity for ESD protection device

Medium high voltage MOSFET device

Drain extended transistor with trench gate

Integrated channel diode

Power transistor with terminal trenches in terminal resurf regions

Vertical high-voltage MOS transistor

Medium voltage MOSFET device

Multiple shielding trench gate FET

Power transistor with terminal trenches in terminal resurf regions

Split-gate lateral extended drain MOS transistor structure and process

Silicon epitaxy for high aspect ratio, substantially perpendicular...

MOSFET having dual-gate cells with an integrated channel diode

Multiple shielding trench gate FET

Integrated termination for multiple trench field plate

Trench having thick dielectric selectively on bottom portion

MOSFET having dual-gate cells with an integrated channel diode

Trench MOSFET having reduced gate charge

Vertical high-voltage MOS transistor and method of forming the same

Trench MOSFET having reduced gate charge

Integrated channel diode

Integrated termination for multiple trench field plate

Monolithically integrated active snubber

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICES WITH HIGH CURRENT CAPABILITY FOR ELECTROSTATI...

ELECTROSTATIC DISCHARGE PROTECTION DEVICES WITH HIGH CURRENT CAPABI...

SEMICONDUCTOR ON INSULATOR ON WIDE BAND-GAP SEMICONDUCTOR

HYBRID SEMICONDUCTOR DEVICE

HYBRID COMPONENT WITH SILICON AND WIDE BANDGAP SEMCONDUCTOR MATERIAL

HYBRID COMPONENT WITH SILICON AND WIDE BANDGAP SEMCONDUCTOR MATERIA...

HYBRID COMPONENT WITH SILICON AND WIDE BANDGAP SEMCONDUCTOR MATERIA...

HYBRID SEMICONDUCTOR DEVICE

SEMICONDUCTOR ON INSULATOR ON WIDE BAND-GAP SEMICONDUCTOR

ACTIVE MONOLITHIC SNUBBER DESIGN

ESD PROTECTION DEVICE WITH BREAKDOWN VOLTAGE STABILIZATION

BREAKDOWN UNIFORMITY FOR ESD PROTECTION DEVICE

INTEGRATED CHANNEL DIODE

DRAIN EXTENDED TRANSISTOR WITH TRENCH GATE

DRAIN EXTENDED TRANSISTOR WITH TRENCH GATE

TRANSISTOR WITH INTEGRATED CAPACITOR

POWER TRANSISTOR WITH TERMINAL TRENCHES IN TERMINAL RESURF REGIONS

POWER TRANSISTOR WITH TERMINAL TRENCHES IN TERMINAL RESURF REGIONS

Multiple Shielding Trench Gate FET

TRENCH HAVING THICK DIELECTRIC SELECTIVELY ON BOTTOM PORTION

MOSFET HAVING DUAL-GATE CELLS WITH AN INTEGRATED CHANNEL DIODE

SPLIT-GATE LATERAL EXTENDED DRAIN MOS TRANSISTOR STRUCTURE AND PROCESS

VERTICAL HIGH-VOLTAGE MOS TRANSISTOR

INTEGRATED CHANNEL DIODE

INTEGRATED TERMINATION FOR MULTIPLE TRENCH FIELD PLATE

Multiple Shielding Trench Gate FET

Medium High Voltage MOSFET Device

Medium High Voltage MOSFET Device

MOSFET Having Dual-Gate Cells with an Integrated Channel Diode

Trench MOSFET Having Reduced Gate Charge