Christy M.-C. Woo

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Copper interconnects with improved electromigration lifetime
- Patent number 8,723,321
- Issue date May 13, 2014
- GLOBALFOUNDIES Inc.
- Christy Woo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a metal gate structure with tuning of work functi...
- Patent number 7,071,086
- Issue date Jul 4, 2006
- Advanced Micro Devices, Inc.
- Christy Woo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with metal gate and high-k tantalum oxide or t...
- Patent number 7,060,571
- Issue date Jun 13, 2006
- Advanced Micro Devices, Inc.
- Minh Van Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Engineered metal gate electrode
- Patent number 7,033,888
- Issue date Apr 25, 2006
- Advanced Micro Devices, Inc.
- James N. Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for preventing an increase in contact hole width during cont...
- Patent number 7,005,387
- Issue date Feb 28, 2006
- Advanced Micro Devices, Inc.
- Dawn Hopper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual damascene integration scheme for preventing copper contaminati...
- Patent number 6,939,793
- Issue date Sep 6, 2005
- Advanced Micro Devices, Inc.
- Lu You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protection of low-k ILD during damascene processing with thin liner
- Patent number 6,836,017
- Issue date Dec 28, 2004
- Advanced Micro Devices, Inc.
- Minh Van Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate dielectric quality for replacement metal gate transistors
- Patent number 6,830,998
- Issue date Dec 14, 2004
- Advanced Micro Devices, Inc.
- James Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Physical vapor deposition of nickel
- Patent number 6,806,172
- Issue date Oct 19, 2004
- Advanced Micro Devices, Inc.
- Christy Mei-Chu Woo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Titanium barrier for nickel silicidation of a gate electrode
- Patent number 6,730,587
- Issue date May 4, 2004
- Advanced Micro Devices, Inc.
- Jacques J. Bertrand
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Engineered metal gate electrode
- Patent number 6,727,560
- Issue date Apr 27, 2004
- Advanced Micro Devices, Inc.
- James N. Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Copper interconnect with improved barrier layer
- Patent number 6,727,592
- Issue date Apr 27, 2004
- Advanced Micro Devices, Inc.
- Christy Mei-Chu Woo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nickel silicide process using non-reactive spacer
- Patent number 6,724,051
- Issue date Apr 20, 2004
- Advanced Micro Devices, Inc.
- Christy Mei-Chu Woo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protection low-k ILD during damascene processing with thin liner
- Patent number 6,723,635
- Issue date Apr 20, 2004
- Advanced Micro Devices, Inc.
- Minh Van Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reactive pre-clean using reducing gas during nickel silicide process
- Patent number 6,720,225
- Issue date Apr 13, 2004
- Advanced Micro Devices, Inc.
- Christy Mei-Chu Woo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitrogen oxide plasma treatment for reduced nickel silicide bridging
- Patent number 6,713,392
- Issue date Mar 30, 2004
- Advanced Micro Devices, Inc.
- Minh Van Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of ta/tan for preventing copper contamination of low-k dielectr...
- Patent number 6,663,787
- Issue date Dec 16, 2003
- Advanced Micro Devices, Inc.
- Lu You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitrogen-plasma treatment for reduced nickel silicide bridging
- Patent number 6,661,067
- Issue date Dec 9, 2003
- Advanced Micro Devices, Inc.
- Minh Van Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conformal barrier liner in an integrated circuit interconnect
- Patent number 6,657,304
- Issue date Dec 2, 2003
- Advanced Micro Devices, Inc.
- Christy Mei-Chu Woo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Barrier layer integrity test
- Patent number 6,633,083
- Issue date Oct 14, 2003
- Advanced Micro Devices Inc.
- Christy Mei-Chu Woo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
METHOD OF DETERMINING BARRIER LAYER EFFECTIVENESS FOR PREVENTING ME...
- Patent number 6,617,176
- Issue date Sep 9, 2003
- Advanced Micro Devices, Inc.
- John E. Sanchez
- G01 - MEASURING TESTING
Information Patent Grant
Method of forming nickel silicide using a one-step rapid thermal an...
- Patent number 6,605,513
- Issue date Aug 12, 2003
- Advanced Micro Devices, Inc.
- Eric N. Paton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Testing dielectric and barrier layers for integrated circuit interc...
- Patent number 6,599,835
- Issue date Jul 29, 2003
- Advanced Micro Devices, Inc.
- Amit P. Marathe
- G01 - MEASURING TESTING
Information Patent Grant
Method for manufacturing a low dielectric constant stop layer for i...
- Patent number 6,593,237
- Issue date Jul 15, 2003
- Advanced Micro Devices, Inc.
- Minh Van Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective deposition in integrated circuit interconnects
- Patent number 6,590,288
- Issue date Jul 8, 2003
- Advanced Micro Devices, Inc.
- Christy Mei-Chu Woo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual damascene integration scheme for preventing copper contaminati...
- Patent number 6,586,842
- Issue date Jul 1, 2003
- Advanced Micro Devices, Inc.
- Lu You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated plasma treatment and nickel deposition and tool for perf...
- Patent number 6,586,333
- Issue date Jul 1, 2003
- Advanced Micro Devices, Inc.
- Christy Mei-Chu Woo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming fully silicided gates
- Patent number 6,562,718
- Issue date May 13, 2003
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having multiple thickness nickel silicide layers
- Patent number 6,562,717
- Issue date May 13, 2003
- Advanced Micro Devices, Inc.
- Christy Mei-Chu Woo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully nickel silicided metal gate with shallow junction formed
- Patent number 6,555,453
- Issue date Apr 29, 2003
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF FORMING VIAS IN A SEMICONDUCTOR DEVICE
- Publication number 20080182407
- Publication date Jul 31, 2008
- Advanced Micro Devices, Inc.
- Jun Zhai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Copper interconnects with improved electromigration lifetime
- Publication number 20070284748
- Publication date Dec 13, 2007
- Advanced Micro Devices, Inc.
- Christy Woo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual-level stacked flash memory cell with a MOSFET storage transistor
- Publication number 20050232051
- Publication date Oct 20, 2005
- James Pan
- G11 - INFORMATION STORAGE
Information Patent Application
CU INTERCONNECTS WITH COMPOSITE BARRIER LAYERS FOR WAFER-TO-WAFER U...
- Publication number 20050224979
- Publication date Oct 13, 2005
- Advanced Micro Devices, Inc.
- Amit P. Marathe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for preventing an increase in contact hole width during cont...
- Publication number 20050101148
- Publication date May 12, 2005
- Advanced Micro Devices, Inc.
- Dawn Hopper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a metal gate structure with tuning of work functi...
- Publication number 20040214416
- Publication date Oct 28, 2004
- Advanced Micro Devices, Inc.
- Christy Woo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Engineered metal gate electrode
- Publication number 20040175910
- Publication date Sep 9, 2004
- Advanced Micro Devices, Inc.
- James N. Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Protection of low-k ILD during damascene processing with thin liner
- Publication number 20040147117
- Publication date Jul 29, 2004
- Advanced Micro Devices, Inc.
- Minh Van Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming conductor reservoir volume for integrated circui...
- Publication number 20020195714
- Publication date Dec 26, 2002
- Amit P. Marathe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Barrier layer integrity test
- Publication number 20020151093
- Publication date Oct 17, 2002
- Christy Mei-Chu Woo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Conductor reservoir volume for integrated circuit interconnects
- Publication number 20020093057
- Publication date Jul 18, 2002
- Amit P. Marathe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING NICKEL SILICIDE USING A ONE-STEP RAPID THERMAL AN...
- Publication number 20020068408
- Publication date Jun 6, 2002
- Advanced Micro Devices, Inc.
- Eric N. Paton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual layer silicide formation using an aluminum barrier to reduce s...
- Publication number 20020068444
- Publication date Jun 6, 2002
- Jacques Bertrand
- H01 - BASIC ELECTRIC ELEMENTS

Christy M.-C. Woo

Person

Patents Grantslast 30 patents

Copper interconnects with improved electromigration lifetime

Method of forming a metal gate structure with tuning of work functi...

Semiconductor device with metal gate and high-k tantalum oxide or t...

Engineered metal gate electrode

Method for preventing an increase in contact hole width during cont...

Dual damascene integration scheme for preventing copper contaminati...

Protection of low-k ILD during damascene processing with thin liner

Gate dielectric quality for replacement metal gate transistors

Physical vapor deposition of nickel

Titanium barrier for nickel silicidation of a gate electrode

Engineered metal gate electrode

Copper interconnect with improved barrier layer

Nickel silicide process using non-reactive spacer

Protection low-k ILD during damascene processing with thin liner

Reactive pre-clean using reducing gas during nickel silicide process

Nitrogen oxide plasma treatment for reduced nickel silicide bridging

Use of ta/tan for preventing copper contamination of low-k dielectr...

Nitrogen-plasma treatment for reduced nickel silicide bridging

Conformal barrier liner in an integrated circuit interconnect

Barrier layer integrity test

METHOD OF DETERMINING BARRIER LAYER EFFECTIVENESS FOR PREVENTING ME...

Method of forming nickel silicide using a one-step rapid thermal an...

Testing dielectric and barrier layers for integrated circuit interc...

Method for manufacturing a low dielectric constant stop layer for i...

Selective deposition in integrated circuit interconnects

Dual damascene integration scheme for preventing copper contaminati...

Integrated plasma treatment and nickel deposition and tool for perf...

Process for forming fully silicided gates

Semiconductor device having multiple thickness nickel silicide layers

Fully nickel silicided metal gate with shallow junction formed

Patents Applicationslast 30 patents

METHOD OF FORMING VIAS IN A SEMICONDUCTOR DEVICE

Copper interconnects with improved electromigration lifetime

Dual-level stacked flash memory cell with a MOSFET storage transistor

CU INTERCONNECTS WITH COMPOSITE BARRIER LAYERS FOR WAFER-TO-WAFER U...

Method for preventing an increase in contact hole width during cont...

Method of forming a metal gate structure with tuning of work functi...

Engineered metal gate electrode

Protection of low-k ILD during damascene processing with thin liner

Method for forming conductor reservoir volume for integrated circui...

Barrier layer integrity test

Conductor reservoir volume for integrated circuit interconnects

METHOD OF FORMING NICKEL SILICIDE USING A ONE-STEP RAPID THERMAL AN...

Dual layer silicide formation using an aluminum barrier to reduce s...