Da Yang

Person

San Diego, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Cell circuits formed in circuit cells employing offset gate cut are...
- Patent number 11,152,347
- Issue date Oct 19, 2021
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned quadruple patterning process for Fin pitch below 20nm
- Patent number 10,559,501
- Issue date Feb 11, 2020
- QUALCOMM Incorporated
- Stanley Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-oxide semiconductor (MOS) standard cells employing electrical...
- Patent number 10,497,702
- Issue date Dec 3, 2019
- QUALCOMM Incorporated
- John Jianhong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Layout effect mitigation in FinFET
- Patent number 10,181,403
- Issue date Jan 15, 2019
- QUALCOMM Incorporated
- Da Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Standard cell circuits employing high aspect ratio voltage rails fo...
- Patent number 10,090,244
- Issue date Oct 2, 2018
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor device having a gap defined therein
- Patent number 10,079,293
- Issue date Sep 18, 2018
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertically stacked nanowire field effect transistors
- Patent number 10,043,796
- Issue date Aug 7, 2018
- QUALCOMM Incorporated
- Vladimir Machkaoutsan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire channel structures of continuously stacked nanowires for c...
- Patent number 10,032,678
- Issue date Jul 24, 2018
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for mitigating layout effect in FINFET
- Patent number 9,997,360
- Issue date Jun 12, 2018
- QUALCOMM Incorporated
- Da Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Minimum track standard cell circuits for reduced area
- Patent number 9,985,014
- Issue date May 29, 2018
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Contact wrap around structure
- Patent number 9,953,979
- Issue date Apr 24, 2018
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a gap defined therein
- Patent number 9,871,121
- Issue date Jan 16, 2018
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits having reduced dimensions between components
- Patent number 9,859,210
- Issue date Jan 2, 2018
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned structure
- Patent number 9,799,560
- Issue date Oct 24, 2017
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Middle-of-line integration methods and semiconductor devices
- Patent number 9,653,399
- Issue date May 16, 2017
- QUALCOMM Incorporated
- John Jianhong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Middle-of-line (MOL) manufactured integrated circuits (ICs) employi...
- Patent number 9,620,454
- Issue date Apr 11, 2017
- QUALCOMM Incorporated
- John Jianhong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electron-beam (E-beam) based semiconductor device features
- Patent number 9,502,283
- Issue date Nov 22, 2016
- QUALCOMM Incorporated
- Stanley Seungchul Song
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Combining cut mask lithography and conventional lithography to achi...
- Patent number 9,263,279
- Issue date Feb 16, 2016
- QUALCOMM Incorporated
- John J. Zhu
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Semiconductor device having high mobility channel
- Patent number 9,245,971
- Issue date Jan 26, 2016
- QUALCOMM Incorporated
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELF-ALIGNED QUADRUPLE PATTERNING PROCESS FOR FIN PITCH BELOW 20nm
- Publication number 20200161189
- Publication date May 21, 2020
- QUALCOMM Incorporated
- Stanley SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CELL CIRCUITS FORMED IN CIRCUIT CELLS EMPLOYING OFFSET GATE CUT ARE...
- Publication number 20190319022
- Publication date Oct 17, 2019
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID METAL INTERCONNECT STRUCTURES FOR ADVANCED PROCESS NODES
- Publication number 20190304919
- Publication date Oct 3, 2019
- QUALCOMM Incorporated
- John ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHODS FOR DUMMY GATE TIE-OFFS IN A SELF-ALIGNED GATE...
- Publication number 20190296126
- Publication date Sep 26, 2019
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-OXIDE SEMICONDUCTOR (MOS) STANDARD CELLS EMPLOYING ELECTRICAL...
- Publication number 20180301447
- Publication date Oct 18, 2018
- QUALCOMM Incorporated
- John Jianhong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYOUT EFFECT MITIGATION IN FINFET
- Publication number 20180197743
- Publication date Jul 12, 2018
- QUALCOMM Incorporated
- Da YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A GAP DEFINED THEREIN
- Publication number 20180114848
- Publication date Apr 26, 2018
- Qualcomm Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYOUT EFFECT MITIGATION IN FINFET
- Publication number 20180082846
- Publication date Mar 22, 2018
- QUALCOMM Incorporated
- Da YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL SELF-ALIGNED QUADRUPLE PATTERNING PROCESS FOR FIN PITCH BELOW...
- Publication number 20180082906
- Publication date Mar 22, 2018
- QUALCOMM Incorporated
- Stanley SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MINIMUM TRACK STANDARD CELL CIRCUITS FOR REDUCED AREA
- Publication number 20180076189
- Publication date Mar 15, 2018
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
STANDARD CELL CIRCUITS EMPLOYING HIGH ASPECT RATIO VOLTAGE RAILS FO...
- Publication number 20180033729
- Publication date Feb 1, 2018
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROGENEOUS CELL ARRAY
- Publication number 20170338215
- Publication date Nov 23, 2017
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICALLY STACKED NANOWIRE FIELD EFFECT TRANSISTORS
- Publication number 20170221884
- Publication date Aug 3, 2017
- QUALCOMM Incorporated
- Vladimir Machkaoutsan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE METAL-OXIDE SEMICONDUCTOR (MOS) FIELD-EFFECT TRANSISTORS (...
- Publication number 20170207313
- Publication date Jul 20, 2017
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE CHANNEL STRUCTURES OF CONTINUOUSLY STACKED NANOWIRES FOR C...
- Publication number 20170110374
- Publication date Apr 20, 2017
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE CHANNEL STRUCTURES OF CONTINUOUSLY STACKED HETEROGENEOUS N...
- Publication number 20170110541
- Publication date Apr 20, 2017
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-CELL TRANSISTOR DEVICE AND METHOD OF MAKING SAME WITH CUT POL...
- Publication number 20170077090
- Publication date Mar 16, 2017
- QUALCOMM Incorporated
- Stanley Seungchul SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS HAVING REDUCED DIMENSIONS BETWEEN COMPONENTS
- Publication number 20160372414
- Publication date Dec 22, 2016
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED STRUCTURE
- Publication number 20160293485
- Publication date Oct 6, 2016
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRON-BEAM (E-BEAM) BASED SEMICONDUCTOR DEVICE FEATURES
- Publication number 20160247714
- Publication date Aug 25, 2016
- QUALCOMM Incorporated
- Stanley Seungchul Song
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MIDDLE-OF-LINE INTEGRATION METHODS AND SEMICONDUCTOR DEVICES
- Publication number 20160240485
- Publication date Aug 18, 2016
- QUALCOMM Incorporated
- John Jianhong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE INCLUDING MULTIPLE VIA CONNECTORS AND A M...
- Publication number 20160233159
- Publication date Aug 11, 2016
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT WRAP AROUND STRUCTURE
- Publication number 20160148936
- Publication date May 26, 2016
- QUALCOMM Incorporated
- Jeffrey Junhao XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BARRIER STRUCTURE
- Publication number 20160141250
- Publication date May 19, 2016
- QUALCOMM Incorporated
- Junjing Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMBINING CUT MASK LITHOGRAPHY AND CONVENTIONAL LITHOGRAPHY TO ACHI...
- Publication number 20160126137
- Publication date May 5, 2016
- QUALCOMM Incorporated
- John J. ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIGATE TRANSISTOR DEVICE AND METHOD OF ISOLATING ADJACENT TRANSI...
- Publication number 20160093511
- Publication date Mar 31, 2016
- QUALCOMM Incorporated
- Samit SENGUPTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIDDLE-OF-LINE (MOL) MANUFACTURED INTEGRATED CIRCUITS (ICs) EMPLOYI...
- Publication number 20160079175
- Publication date Mar 17, 2016
- QUALCOMM Incorporated
- John Jianhong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A GAP DEFINED THEREIN
- Publication number 20150255571
- Publication date Sep 10, 2015
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING HIGH MOBILITY CHANNEL
- Publication number 20150091060
- Publication date Apr 2, 2015
- QUALCOMM Incorporated
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMBINING CUT MASK LITHOGRAPHY AND CONVENTIONAL LITHOGRAPHY TO ACHI...
- Publication number 20140312500
- Publication date Oct 23, 2014
- QUALCOMM Incorporated
- John J. Zhu
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Cell circuits formed in circuit cells employing offset gate cut are...

Self-aligned quadruple patterning process for Fin pitch below 20nm

Metal-oxide semiconductor (MOS) standard cells employing electrical...

Layout effect mitigation in FinFET

Standard cell circuits employing high aspect ratio voltage rails fo...

Semiconductor device having a gap defined therein

Vertically stacked nanowire field effect transistors

Nanowire channel structures of continuously stacked nanowires for c...

Method for mitigating layout effect in FINFET

Minimum track standard cell circuits for reduced area

Contact wrap around structure

Semiconductor device having a gap defined therein

Integrated circuits having reduced dimensions between components

Self-aligned structure

Middle-of-line integration methods and semiconductor devices

Middle-of-line (MOL) manufactured integrated circuits (ICs) employi...

Electron-beam (E-beam) based semiconductor device features

Combining cut mask lithography and conventional lithography to achi...

Semiconductor device having high mobility channel

Patents Applicationslast 30 patents

SELF-ALIGNED QUADRUPLE PATTERNING PROCESS FOR FIN PITCH BELOW 20nm

CELL CIRCUITS FORMED IN CIRCUIT CELLS EMPLOYING OFFSET GATE CUT ARE...

HYBRID METAL INTERCONNECT STRUCTURES FOR ADVANCED PROCESS NODES

SYSTEMS AND METHODS FOR DUMMY GATE TIE-OFFS IN A SELF-ALIGNED GATE...

METAL-OXIDE SEMICONDUCTOR (MOS) STANDARD CELLS EMPLOYING ELECTRICAL...

LAYOUT EFFECT MITIGATION IN FINFET

SEMICONDUCTOR DEVICE HAVING A GAP DEFINED THEREIN

LAYOUT EFFECT MITIGATION IN FINFET

NOVEL SELF-ALIGNED QUADRUPLE PATTERNING PROCESS FOR FIN PITCH BELOW...

MINIMUM TRACK STANDARD CELL CIRCUITS FOR REDUCED AREA

STANDARD CELL CIRCUITS EMPLOYING HIGH ASPECT RATIO VOLTAGE RAILS FO...

HETEROGENEOUS CELL ARRAY

VERTICALLY STACKED NANOWIRE FIELD EFFECT TRANSISTORS

NANOWIRE METAL-OXIDE SEMICONDUCTOR (MOS) FIELD-EFFECT TRANSISTORS (...

NANOWIRE CHANNEL STRUCTURES OF CONTINUOUSLY STACKED NANOWIRES FOR C...

NANOWIRE CHANNEL STRUCTURES OF CONTINUOUSLY STACKED HETEROGENEOUS N...

MULTI-CELL TRANSISTOR DEVICE AND METHOD OF MAKING SAME WITH CUT POL...

INTEGRATED CIRCUITS HAVING REDUCED DIMENSIONS BETWEEN COMPONENTS

SELF-ALIGNED STRUCTURE

ELECTRON-BEAM (E-BEAM) BASED SEMICONDUCTOR DEVICE FEATURES

MIDDLE-OF-LINE INTEGRATION METHODS AND SEMICONDUCTOR DEVICES

INTEGRATED CIRCUIT DEVICE INCLUDING MULTIPLE VIA CONNECTORS AND A M...

CONTACT WRAP AROUND STRUCTURE

BARRIER STRUCTURE

COMBINING CUT MASK LITHOGRAPHY AND CONVENTIONAL LITHOGRAPHY TO ACHI...

MULTIGATE TRANSISTOR DEVICE AND METHOD OF ISOLATING ADJACENT TRANSI...

MIDDLE-OF-LINE (MOL) MANUFACTURED INTEGRATED CIRCUITS (ICs) EMPLOYI...

SEMICONDUCTOR DEVICE HAVING A GAP DEFINED THEREIN

SEMICONDUCTOR DEVICE HAVING HIGH MOBILITY CHANNEL

COMBINING CUT MASK LITHOGRAPHY AND CONVENTIONAL LITHOGRAPHY TO ACHI...