Dan Mocuta

Person

LaGrangeville, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
FinFET with constrained source-drain epitaxial region
- Patent number 9,673,197
- Issue date Jun 6, 2017
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with constrained source-drain epitaxial region
- Patent number 9,536,879
- Issue date Jan 3, 2017
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned laterally extended strap for a dynamic random access m...
- Patent number 9,461,050
- Issue date Oct 4, 2016
- GLOBALFOUNDRIES Inc.
- Byeong Y. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with constrained source-drain epitaxial region
- Patent number 9,443,854
- Issue date Sep 13, 2016
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Constrained epitaxial source/drain regions on semiconductor-on-insu...
- Patent number 9,299,780
- Issue date Mar 29, 2016
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Constrained epitaxial source/drain regions on semiconductor-on-insu...
- Patent number 9,252,215
- Issue date Feb 2, 2016
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-height multi-composition semiconductor fins
- Patent number 9,093,275
- Issue date Jul 28, 2015
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-K and metal filled trench-type EDRAM capacitor with electrode...
- Patent number 9,059,194
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Colin J. Brodsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pseudomorphic Si/SiGe/Si body device with embedded SiGe source/drain
- Patent number 8,168,971
- Issue date May 1, 2012
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with super-steep retrograded island
- Patent number 7,723,750
- Issue date May 25, 2010
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pseudomorphic Si/SiGe/Si body device with embedded SiGe source/drain
- Patent number 7,691,698
- Issue date Apr 6, 2010
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming thin SGOI wafers with high relaxation and low sta...
- Patent number 7,550,370
- Issue date Jun 23, 2009
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for manufacturing device with ultra thin SOI a...
- Patent number 7,528,027
- Issue date May 5, 2009
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protecting silicon germanium sidewall with silicon for strained sil...
- Patent number 7,498,602
- Issue date Mar 3, 2009
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for manufacturing MOSFET with super-steep retr...
- Patent number 7,268,049
- Issue date Sep 11, 2007
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protecting silicon germanium sidewall with silicon for strained sil...
- Patent number 7,202,132
- Issue date Apr 10, 2007
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chemical treatment to retard diffusion in a semiconductor overlayer
- Patent number 7,071,103
- Issue date Jul 4, 2006
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of preventing surface roughening during hydrogen prebake of...
- Patent number 6,958,286
- Issue date Oct 25, 2005
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance CMOS device structure with mid-gap metal gate
- Patent number 6,916,698
- Issue date Jul 12, 2005
- International Business Machines Corporation
- Anda C. Mocuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance CMOS device structure with mid-gap metal gate
- Patent number 6,762,469
- Issue date Jul 13, 2004
- International Business Machines Corporation
- Anda C. Mocuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improving CVD film quality utilizing polysilicon getterer
- Patent number 6,749,684
- Issue date Jun 15, 2004
- International Business Machines Corporation
- Huajie Chen
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
FINFET WITH CONSTRAINED SOURCE-DRAIN EPITAXIAL REGION
- Publication number 20160329428
- Publication date Nov 10, 2016
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH CONSTRAINED SOURCE-DRAIN EPITAXIAL REGION
- Publication number 20160043082
- Publication date Feb 11, 2016
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH CONSTRAINED SOURCE-DRAIN EPITAXIAL REGION
- Publication number 20160013185
- Publication date Jan 14, 2016
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONSTRAINED EPITAXIAL SOURCE/DRAIN REGIONS ON SEMICONDUCTOR-ON-INSU...
- Publication number 20150357412
- Publication date Dec 10, 2015
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-HEIGHT MULTI-COMPOSITION SEMICONDUCTOR FINS
- Publication number 20150333087
- Publication date Nov 19, 2015
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONSTRAINED EPITAXIAL SOURCE/DRAIN REGIONS ON SEMICONDUCTOR-ON-INSU...
- Publication number 20150279958
- Publication date Oct 1, 2015
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED LATERALLY EXTENDED STRAP FOR A DYNAMIC RANDOM ACCESS M...
- Publication number 20150162336
- Publication date Jun 11, 2015
- International Business Machines Corporation
- Byeong Y. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-HEIGHT MULTI-COMPOSITION SEMICONDUCTOR FINS
- Publication number 20150108616
- Publication date Apr 23, 2015
- International Business Machines Corporation
- Brian J. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K AND METAL FILLED TRENCH-TYPE EDRAM CAPACITOR WITH ELECTRODE...
- Publication number 20150102463
- Publication date Apr 16, 2015
- International Business Machines Corporation
- Colin J. Brodsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-K and Metal Filled Trench-Type EDRAM Capacitor with Electrode...
- Publication number 20140191366
- Publication date Jul 10, 2014
- International Business Machines Corporation
- Colin J. Brodsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PSEUDOMORPHIC SI/SIGE/SI BODY DEVICE WITH EMBEDDED SIGE SOURCE/DRAIN
- Publication number 20080179680
- Publication date Jul 31, 2008
- International Business Machines Corporation
- Dureseti CHIDAMBARRAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-FETS WITH TENSILELY STRAINED SEMICONDUCTOR CHANNELS, AND METHOD F...
- Publication number 20080179636
- Publication date Jul 31, 2008
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR MANUFACTURING MOSFET WITH SUPER-STEEP RETR...
- Publication number 20070252203
- Publication date Nov 1, 2007
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFERENTIAL SPACER FORMATION FOR A FIELD EFFECT TRANSISTOR
- Publication number 20070249112
- Publication date Oct 25, 2007
- International Business Machines Corporation
- Brian Joseph Geene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Pseudomorphic Si/SiGe/Si body device with embedded SiGe source/drain
- Publication number 20070196987
- Publication date Aug 23, 2007
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming thin sgoi wafers with high relaxation and low sta...
- Publication number 20070128840
- Publication date Jun 7, 2007
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROTECTING SILICON GERMANIUM SIDEWALL WITH SILICON FOR STRAINED SIL...
- Publication number 20060163608
- Publication date Jul 27, 2006
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and method for manufacturing MOSFET with super-steep retr...
- Publication number 20060068555
- Publication date Mar 30, 2006
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHEMICAL TREATMENT TO RETARD DIFFUSION IN A SEMICONDUCTOR OVERLAYER
- Publication number 20060024934
- Publication date Feb 2, 2006
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Protecting Silicon Germanium Sidewall with Silicon for Strained Sil...
- Publication number 20050156154
- Publication date Jul 21, 2005
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of preventing surface roughening during hydrogen prebake of...
- Publication number 20050148161
- Publication date Jul 7, 2005
- Huajie Chen
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of preventing surface roughening during hydrogen pre-bake of...
- Publication number 20050148162
- Publication date Jul 7, 2005
- Huajie Chen
- C30 - CRYSTAL GROWTH
Information Patent Application
High performance CMOS device structure with mid-gap metal gate
- Publication number 20040171205
- Publication date Sep 2, 2004
- International Business Machines Corporation
- Anda C. Mocuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High performance CMOS device structure with mid-gap metal gate
- Publication number 20030197230
- Publication date Oct 23, 2003
- International Business Machines Corporation
- Anda C. Mocuta
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

FinFET with constrained source-drain epitaxial region

FinFET with constrained source-drain epitaxial region

Self-aligned laterally extended strap for a dynamic random access m...

FinFET with constrained source-drain epitaxial region

Constrained epitaxial source/drain regions on semiconductor-on-insu...

Constrained epitaxial source/drain regions on semiconductor-on-insu...

Multi-height multi-composition semiconductor fins

High-K and metal filled trench-type EDRAM capacitor with electrode...

Pseudomorphic Si/SiGe/Si body device with embedded SiGe source/drain

MOSFET with super-steep retrograded island

Pseudomorphic Si/SiGe/Si body device with embedded SiGe source/drain

Method of forming thin SGOI wafers with high relaxation and low sta...

Structure and method for manufacturing device with ultra thin SOI a...

Protecting silicon germanium sidewall with silicon for strained sil...

Structure and method for manufacturing MOSFET with super-steep retr...

Protecting silicon germanium sidewall with silicon for strained sil...

Chemical treatment to retard diffusion in a semiconductor overlayer

Method of preventing surface roughening during hydrogen prebake of...

High performance CMOS device structure with mid-gap metal gate

High performance CMOS device structure with mid-gap metal gate

Method for improving CVD film quality utilizing polysilicon getterer

Patents Applicationslast 30 patents

FINFET WITH CONSTRAINED SOURCE-DRAIN EPITAXIAL REGION

FINFET WITH CONSTRAINED SOURCE-DRAIN EPITAXIAL REGION

FINFET WITH CONSTRAINED SOURCE-DRAIN EPITAXIAL REGION

CONSTRAINED EPITAXIAL SOURCE/DRAIN REGIONS ON SEMICONDUCTOR-ON-INSU...

MULTI-HEIGHT MULTI-COMPOSITION SEMICONDUCTOR FINS

CONSTRAINED EPITAXIAL SOURCE/DRAIN REGIONS ON SEMICONDUCTOR-ON-INSU...

SELF-ALIGNED LATERALLY EXTENDED STRAP FOR A DYNAMIC RANDOM ACCESS M...

MULTI-HEIGHT MULTI-COMPOSITION SEMICONDUCTOR FINS

HIGH-K AND METAL FILLED TRENCH-TYPE EDRAM CAPACITOR WITH ELECTRODE...

High-K and Metal Filled Trench-Type EDRAM Capacitor with Electrode...

PSEUDOMORPHIC SI/SIGE/SI BODY DEVICE WITH EMBEDDED SIGE SOURCE/DRAIN

N-FETS WITH TENSILELY STRAINED SEMICONDUCTOR CHANNELS, AND METHOD F...

STRUCTURE AND METHOD FOR MANUFACTURING MOSFET WITH SUPER-STEEP RETR...

DIFFERENTIAL SPACER FORMATION FOR A FIELD EFFECT TRANSISTOR

Pseudomorphic Si/SiGe/Si body device with embedded SiGe source/drain

Method of forming thin sgoi wafers with high relaxation and low sta...

PROTECTING SILICON GERMANIUM SIDEWALL WITH SILICON FOR STRAINED SIL...

Structure and method for manufacturing MOSFET with super-steep retr...

CHEMICAL TREATMENT TO RETARD DIFFUSION IN A SEMICONDUCTOR OVERLAYER

Protecting Silicon Germanium Sidewall with Silicon for Strained Sil...

Method of preventing surface roughening during hydrogen prebake of...

Method of preventing surface roughening during hydrogen pre-bake of...

High performance CMOS device structure with mid-gap metal gate

High performance CMOS device structure with mid-gap metal gate