Daniel Xu

Person

Mountain View, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Reducing leakage currents in memories with phase-change material
- Patent number 7,906,391
- Issue date Mar 15, 2011
- Ovonyx, Inc.
- Daniel Xu
- G11 - INFORMATION STORAGE
Information Patent Grant
Forming tapered lower electrode phase-change memories
- Patent number 7,422,917
- Issue date Sep 9, 2008
- Ovonyx, Inc.
- Daniel Xu
- G11 - INFORMATION STORAGE
Information Patent Grant
Reducing shunts in memories with phase-change material
- Patent number 7,161,225
- Issue date Jan 9, 2007
- Intel Corporation
- Daniel Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Barrier material encapsulation of programmable material
- Patent number 7,064,344
- Issue date Jun 20, 2006
- Intel Corporation
- Daniel Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing leakage currents in memories with phase-change material
- Patent number 6,992,365
- Issue date Jan 31, 2006
- Ovonyx, Inc.
- Daniel Xu
- G11 - INFORMATION STORAGE
Information Patent Grant
Forming tapered lower electrode phase-change memories
- Patent number 6,933,516
- Issue date Aug 23, 2005
- Ovonyx, Inc.
- Daniel Xu
- G11 - INFORMATION STORAGE
Information Patent Grant
Compositionally modified resistive electrode
- Patent number 6,878,618
- Issue date Apr 12, 2005
- Ovonyx, Inc.
- Tyler A. Lowrey
- G11 - INFORMATION STORAGE
Information Patent Grant
Carbon-containing interfacial layer for phase-change memory
- Patent number 6,869,841
- Issue date Mar 22, 2005
- Ovonyx, Inc.
- Daniel Xu
- G11 - INFORMATION STORAGE
Information Patent Grant
Reducing shunts in memories with phase-change material
- Patent number 6,861,267
- Issue date Mar 1, 2005
- Intel Corporation
- Daniel Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming tapered lower electrode phase-change memories
- Patent number 6,800,563
- Issue date Oct 5, 2004
- Ovonyx, Inc.
- Daniel Xu
- G11 - INFORMATION STORAGE
Information Patent Grant
Reduced area intersection between electrode and programming element
- Patent number 6,673,700
- Issue date Jan 6, 2004
- Ovonyx, Inc.
- Charles H. Dennison
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and apparatus to operate a memory cell
- Patent number 6,667,900
- Issue date Dec 23, 2003
- Ovonyx, Inc.
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Grant
Barrier material encapsulation of programmable material
- Patent number 6,642,102
- Issue date Nov 4, 2003
- Intel Corporation
- Daniel Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Carbon-containing interfacial layer for phase-change memory
- Patent number 6,566,700
- Issue date May 20, 2003
- Ovonyx, Inc.
- Daniel Xu
- G11 - INFORMATION STORAGE
Information Patent Grant
Compositionally modified resistive electrode
- Patent number 6,563,164
- Issue date May 13, 2003
- Ovonyx, Inc.
- Tyler A. Lowrey
- G11 - INFORMATION STORAGE
Information Patent Grant
Trench sidewall profile for device isolation
- Patent number 6,514,805
- Issue date Feb 4, 2003
- Intel Corporation
- Daniel Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Biasing scheme of floating unselected wordlines and bitlines of a d...
- Patent number 6,462,984
- Issue date Oct 8, 2002
- Intel Corporation
- Daniel Xu
- G11 - INFORMATION STORAGE
Information Patent Grant
Dual trench isolation for a phase-change memory cell and method of...
- Patent number 6,437,383
- Issue date Aug 20, 2002
- Intel Corporation
- Daniel Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compositionally modified resistive electrode
- Patent number 6,404,665
- Issue date Jun 11, 2002
- Intel Corporation
- Tyler A. Lowrey
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of fabrication of a novel flash integrated circuit
- Patent number 6,265,292
- Issue date Jul 24, 2001
- Intel Corporation
- Krishna Parat
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Forming planarized semiconductor structures
- Publication number 20060098524
- Publication date May 11, 2006
- Daniel Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reducing leakage currents in memories with phase-change material
- Publication number 20060063297
- Publication date Mar 23, 2006
- Daniel Xu
- G11 - INFORMATION STORAGE
Information Patent Application
Forming tapered lower electrode phase-change memories
- Publication number 20050180191
- Publication date Aug 18, 2005
- Daniel Xu
- G11 - INFORMATION STORAGE
Information Patent Application
Reducing shunts in memories with phase-change material
- Publication number 20050136557
- Publication date Jun 23, 2005
- Daniel Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming planarized semiconductor structures
- Publication number 20050032269
- Publication date Feb 10, 2005
- Daniel Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming tapered lower electrode phase-change memories
- Publication number 20040209478
- Publication date Oct 21, 2004
- Daniel Xu
- G11 - INFORMATION STORAGE
Information Patent Application
Reduced area intersection between electrode and programming element
- Publication number 20040087076
- Publication date May 6, 2004
- Charles H. Dennison
- G11 - INFORMATION STORAGE
Information Patent Application
Compositionally modified resistive electrode
- Publication number 20040069982
- Publication date Apr 15, 2004
- Tyler A. Lowrey
- G11 - INFORMATION STORAGE
Information Patent Application
Barrier material encapsulation of programmable material
- Publication number 20030205809
- Publication date Nov 6, 2003
- Daniel Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Carbon-containing interfacial layer for phase-change memory
- Publication number 20030164515
- Publication date Sep 4, 2003
- Daniel Xu
- G11 - INFORMATION STORAGE
Information Patent Application
Method and apparatus to operate a memory cell
- Publication number 20030123284
- Publication date Jul 3, 2003
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Application
Carbon-containing interfacial layer for phase-change memory
- Publication number 20030073295
- Publication date Apr 17, 2003
- Daniel Xu
- G11 - INFORMATION STORAGE
Information Patent Application
Reducing leakage currents in memories with phase-change material
- Publication number 20030073262
- Publication date Apr 17, 2003
- Daniel Xu
- G11 - INFORMATION STORAGE
Information Patent Application
Forming tapered lower electrode phase-change memories
- Publication number 20030071255
- Publication date Apr 17, 2003
- Daniel Xu
- G11 - INFORMATION STORAGE
Information Patent Application
Reducing shunts in memories with phase-change material
- Publication number 20030052351
- Publication date Mar 20, 2003
- Daniel Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduced area intersection between electrode and programming element
- Publication number 20030003691
- Publication date Jan 2, 2003
- Charles H. Dennison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH SIDEWALL PROFILE FOR DEVICE ISOLATION
- Publication number 20030003681
- Publication date Jan 2, 2003
- Daniel Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Biasing scheme of floating unselected wordlines and bitlines of a d...
- Publication number 20030002338
- Publication date Jan 2, 2003
- Daniel Xu
- G11 - INFORMATION STORAGE
Information Patent Application
Barrier material encapsulation of programmable material
- Publication number 20030003709
- Publication date Jan 2, 2003
- Daniel Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL TRENCH ISOLATION FOR A PHASE-CHANGE MEMORY CELL AND METHOD OF...
- Publication number 20020081807
- Publication date Jun 27, 2002
- Daniel Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Compositionally modified resistive electrode
- Publication number 20020038883
- Publication date Apr 4, 2002
- Tyler A. Lowrey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel flash integrated circuit and its method of fabrication
- Publication number 20010024857
- Publication date Sep 27, 2001
- Krishna Parat
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Reducing leakage currents in memories with phase-change material

Forming tapered lower electrode phase-change memories

Reducing shunts in memories with phase-change material

Barrier material encapsulation of programmable material

Reducing leakage currents in memories with phase-change material

Forming tapered lower electrode phase-change memories

Compositionally modified resistive electrode

Carbon-containing interfacial layer for phase-change memory

Reducing shunts in memories with phase-change material

Forming tapered lower electrode phase-change memories

Reduced area intersection between electrode and programming element

Method and apparatus to operate a memory cell

Barrier material encapsulation of programmable material

Carbon-containing interfacial layer for phase-change memory

Compositionally modified resistive electrode

Trench sidewall profile for device isolation

Biasing scheme of floating unselected wordlines and bitlines of a d...

Dual trench isolation for a phase-change memory cell and method of...

Compositionally modified resistive electrode

Method of fabrication of a novel flash integrated circuit

Patents Applicationslast 30 patents

Forming planarized semiconductor structures

Reducing leakage currents in memories with phase-change material

Forming tapered lower electrode phase-change memories

Reducing shunts in memories with phase-change material

Forming planarized semiconductor structures

Forming tapered lower electrode phase-change memories

Reduced area intersection between electrode and programming element

Compositionally modified resistive electrode

Barrier material encapsulation of programmable material

Carbon-containing interfacial layer for phase-change memory

Method and apparatus to operate a memory cell

Carbon-containing interfacial layer for phase-change memory

Reducing leakage currents in memories with phase-change material

Forming tapered lower electrode phase-change memories

Reducing shunts in memories with phase-change material

Reduced area intersection between electrode and programming element

TRENCH SIDEWALL PROFILE FOR DEVICE ISOLATION

Biasing scheme of floating unselected wordlines and bitlines of a d...

Barrier material encapsulation of programmable material

DUAL TRENCH ISOLATION FOR A PHASE-CHANGE MEMORY CELL AND METHOD OF...

Compositionally modified resistive electrode

Novel flash integrated circuit and its method of fabrication