David James Eaglesham

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Hoboken, NJ, US

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Patents Grantslast 30 patents

Information Patent Grant
Process for device fabrication using a high-energy boron implant
- Patent number 6,136,672
- Issue date Oct 24, 2000
- Lucent Technologies Inc.
- Konstantin K. Bourdelle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for controlling dopant diffusion in a semiconductor layer
- Patent number 6,043,139
- Issue date Mar 28, 2000
- Lucent Technologies Inc.
- David James Eaglesham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for controlling dopant diffusion in a semiconductor layer a...
- Patent number 5,731,626
- Issue date Mar 24, 1998
- Lucent Technologies Inc.
- David James Eaglesham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming a semiconductor layer using molecular beam epitaxy
- Patent number 5,169,798
- Issue date Dec 8, 1992
- AT&T Bell Laboratories
- David J. Eaglesham
- H01 - BASIC ELECTRIC ELEMENTS