This application is a continuation of application Ser. No. 08/348,013, filed on Dec. 1, 1994, now abandoned.
Number | Name | Date | Kind |
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5116455 | Daly | May 1992 | |
5338945 | Baliga et al. | Aug 1994 |
Number | Date | Country |
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0419128 | Mar 1991 | EPX |
0452741 | Oct 1991 | EPX |
0565901 | Oct 1993 | EPX |
57-034332 | Feb 1982 | JPX |
63-13567 | Oct 1988 | JPX |
A-01 143355 | May 1989 | JPX |
4372125 | Dec 1992 | JPX |
Entry |
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Nishikawa et al., "Reduction of transient boron diffusion in preamorphized Si by carbon implantation", Appl. Phys. Lett., vol. 60, No. 18, 2270-2, Apr. 1992. |
"The Effects of Impurities on the Diffusion Length in Amorphous Silicon", Photovoltaic Specialties Conference, Kissimmee, vol. 1, No. 1984, May 1, 1994, Institute of Electrical and Electronics Engineers, pp. 330-335. |
Number | Date | Country | |
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Parent | 348013 | Dec 1994 |