This is a divisional of application Ser. No. 08/348,013 filed Dec. 1, 1994 now U.S. Pat. No. 5,731,626.
Number | Name | Date | Kind |
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5116455 | Daly | May 1992 | |
5145794 | Kase et al. | Sep 1992 | |
5338945 | Baliga et al. | Aug 1994 |
Number | Date | Country |
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0 419 128 A1 | Mar 1991 | EPX |
0 452 741 A2 | Oct 1991 | EPX |
0 565 901 A1 | Oct 1993 | EPX |
57-034332 | Feb 1982 | JPX |
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Nishikawa et al., "Reduction of transient boron diffusion in preamorphized Si by carbon implantation", Appl. Phys. Lett. vol. 60, No. 18., pp. 2270-2272, Semiconductor Technology Laboratory, Tokyo, Japan, (Apr. 1992). |
D.E. Carlson et al., "The Effects of Imparities on the Diffusion Length in Amorphous Silicon", Seventeenth IEEE Photovoltaic Specialists Conference--1984, Kissimmee, May 1, 1984, pp. 330-335. |
Number | Date | Country | |
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Parent | 348013 | Dec 1994 |