David Lee

Person

Hsin-chu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Air gap for dual damascene applications
- Patent number 7,449,407
- Issue date Nov 11, 2008
- United Microelectronics Corporation
- Water Lur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap formation method for reducing undesired capacitive coupling...
- Patent number 7,253,095
- Issue date Aug 7, 2007
- United Microelectronics Corporation
- Water Lur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap for tungsten/aluminum plug applications
- Patent number 7,138,329
- Issue date Nov 21, 2006
- United Microelectronics Corporation
- Water Lur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer processing apparatus and methods for depositing cobalt silicide
- Patent number 6,943,110
- Issue date Sep 13, 2005
- United Microelectronics, Corp.
- Water Lur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap structure and formation method for reducing undesired capac...
- Patent number 6,917,109
- Issue date Jul 12, 2005
- United Micorelectronics, Corp.
- Water Lur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with cobalt silicide contacts and method of ma...
- Patent number 6,878,627
- Issue date Apr 12, 2005
- United Microelectronics Corporation
- Water Lur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for making cobalt silicide
- Patent number 6,743,721
- Issue date Jun 1, 2004
- United Microelectronics Corp.
- Water Lur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a MOS capacitor
- Patent number 6,667,203
- Issue date Dec 23, 2003
- United Microelectronics Corp.
- David Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a MOS capacitor
- Patent number 6,621,128
- Issue date Sep 16, 2003
- United Microelectronics Corp.
- David Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming metal via
- Patent number 5,422,312
- Issue date Jun 6, 1995
- United Microelectronics Corp.
- David Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Twin tub CMOS process
- Patent number 5,413,944
- Issue date May 9, 1995
- United Microelectronics Corporation
- David Lee
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
AIR GAP FOR TUNGSTEN/ALUMINUM PLUG APPLICATIONS
- Publication number 20070076339
- Publication date Apr 5, 2007
- Water Lur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Wafer processing apparatus & methods for depositing cobalt silicide
- Publication number 20060014388
- Publication date Jan 19, 2006
- Water Lur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Air gap formation method for reducing undesired capacitive coupling...
- Publication number 20050263896
- Publication date Dec 1, 2005
- Water Lur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with cobalt silicide contacts
- Publication number 20050179139
- Publication date Aug 18, 2005
- Water Lur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with cobalt silicide contacts
- Publication number 20050176248
- Publication date Aug 11, 2005
- Water Lur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Air gap structure and formation method for reducing undesired capac...
- Publication number 20040097013
- Publication date May 20, 2004
- Water Lur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Air gap for tungsten/aluminum plug applications
- Publication number 20040097065
- Publication date May 20, 2004
- Water Lur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Air gap for dual damascene applications
- Publication number 20040094821
- Publication date May 20, 2004
- Water Lur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and system for making cobalt silicide
- Publication number 20030228745
- Publication date Dec 11, 2003
- Water Lur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating a MOS capacitor
- Publication number 20020117705
- Publication date Aug 29, 2002
- United Microelectronics Corp.
- David Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating a MOS capacitor
- Publication number 20020117720
- Publication date Aug 29, 2002
- David Lee
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Air gap for dual damascene applications

Air gap formation method for reducing undesired capacitive coupling...

Air gap for tungsten/aluminum plug applications

Wafer processing apparatus and methods for depositing cobalt silicide

Air gap structure and formation method for reducing undesired capac...

Semiconductor device with cobalt silicide contacts and method of ma...

Method and system for making cobalt silicide

Method of fabricating a MOS capacitor

Method of fabricating a MOS capacitor

Method for forming metal via

Twin tub CMOS process

Patents Applicationslast 30 patents

AIR GAP FOR TUNGSTEN/ALUMINUM PLUG APPLICATIONS

Wafer processing apparatus & methods for depositing cobalt silicide

Air gap formation method for reducing undesired capacitive coupling...

Semiconductor device with cobalt silicide contacts

Semiconductor device with cobalt silicide contacts

Air gap structure and formation method for reducing undesired capac...

Air gap for tungsten/aluminum plug applications

Air gap for dual damascene applications

Method and system for making cobalt silicide

Method of fabricating a MOS capacitor

Method of fabricating a MOS capacitor