David P. Jones

Person

South Glamorgan, GB

People

Patents Grantslast 30 patents

Information Patent Grant
Method for forming a reliable solderable contact
- Patent number 9,852,940
- Issue date Dec 26, 2017
- Infineon Technologies Americas Corp.
- Martin Standing
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solderable contact and passivation for semiconductor dies
- Patent number 9,852,939
- Issue date Dec 26, 2017
- Infineon Technologies Americas Corp.
- Martin Standing
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with a double metal contact and related...
- Patent number 9,761,550
- Issue date Sep 12, 2017
- Infineon Technologies Americas Corp.
- Robert Montgomery
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a shallow and narrow trench FET and related...
- Patent number 9,653,597
- Issue date May 16, 2017
- Infineon Technologies Americas Corp.
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with a double metal contact
- Patent number 9,318,355
- Issue date Apr 19, 2016
- Infineon Technologies Americas Corp.
- Robert Montgomery
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer with reduced thickness variation and method for...
- Patent number 8,987,898
- Issue date Mar 24, 2015
- International Rectifier Corporation
- Rupert Burbidge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buck converter power package
- Patent number 8,860,194
- Issue date Oct 14, 2014
- International Rectifier Corporation
- Ling Ma
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Power semiconductor device including a double metal contact
- Patent number 8,791,525
- Issue date Jul 29, 2014
- International Rectifier Corporation
- Robert Montgomery
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET and method for fabricating same
- Patent number 8,536,645
- Issue date Sep 17, 2013
- International Rectifier Corporation
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solderable top metalization and passivation for source mounted package
- Patent number 8,368,211
- Issue date Feb 5, 2013
- International Rectifier Corporation
- Martin Standing
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Autoclave capable chip-scale package
- Patent number 8,143,729
- Issue date Mar 27, 2012
- International Rectifier Corporation
- Mark Pavier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protective barrier layer for semiconductor device electrodes
- Patent number 8,125,083
- Issue date Feb 28, 2012
- International Rectifier Corporation
- Martin Carroll
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device fabrication using spacers
- Patent number 7,998,808
- Issue date Aug 16, 2011
- International Rectifier Corporation
- Vijay Viswanathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench type MOSgated device with strained layer on trench sidewall
- Patent number 7,691,708
- Issue date Apr 6, 2010
- International Rectifier Corporation
- David Paul Jones
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of manufacture of ultra thin semiconductor wafers with bond...
- Patent number 7,682,935
- Issue date Mar 23, 2010
- International Rectifier Corporation
- Hugo R. G. Burke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced metal design rules for power devices
- Patent number 7,517,810
- Issue date Apr 14, 2009
- International Rectifier Corporation
- David Paul Jones
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device including insulated source electrodes in...
- Patent number 7,465,986
- Issue date Dec 16, 2008
- International Rectifier Corporation
- Dev Alok Girdhar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Top drain fet with integrated body short
- Patent number 7,456,470
- Issue date Nov 25, 2008
- International Rectifier Corporation
- David Paul Jones
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Top drain MOSgated device and process of manufacture therefor
- Patent number 7,439,580
- Issue date Oct 21, 2008
- International Rectifier Corporation
- Daniel M. Kinzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split electrode gate trench power device
- Patent number 7,423,317
- Issue date Sep 9, 2008
- International Rectifier Corporation
- Hugo R. G. Burke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench FET with reduced mesa width and source contact inside active...
- Patent number 7,402,863
- Issue date Jul 22, 2008
- International Rectifier Corporation
- David P. Jones
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench type mosgated device with strained layer on trench sidewall
- Patent number 7,238,985
- Issue date Jul 3, 2007
- International Rectifier Corporation
- David Paul Jones
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self aligned contact structure for trench device
- Patent number 7,081,388
- Issue date Jul 25, 2006
- International Rectifier Corporation
- David P Jones
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a gate dielectric layer for a thin film trans...
- Patent number 6,887,743
- Issue date May 3, 2005
- International Rectifier Corporation
- Richard Bullock
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Conductive black matrix layer for LCD display connected to gate thr...
- Patent number 6,559,914
- Issue date May 6, 2003
- International Rectifier Corp.
- David Paul Jones
- G02 - OPTICS

Patents Applicationslast 30 patents

Information Patent Application
Method for Fabricating a Shallow and Narrow Trench FET
- Publication number 20170213909
- Publication date Jul 27, 2017
- Infineon Technologies Americas Corp.
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device with a Double Metal Contact and Related...
- Publication number 20160233185
- Publication date Aug 11, 2016
- Infineon Technologies Americas Corp.
- Robert Montgomery
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device with Low RDSON and High Breakdown Voltage
- Publication number 20150325685
- Publication date Nov 12, 2015
- International Rectifier Corporation
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device with a Double Metal Contact
- Publication number 20140327057
- Publication date Nov 6, 2014
- Robert Montgomery
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Buck Converter Power Package
- Publication number 20140118032
- Publication date May 1, 2014
- INTERNATIONAL RECTIFIER CORPORATION
- Ling Ma
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
Solderable Contact and Passivation for Semiconductor Dies
- Publication number 20130140701
- Publication date Jun 6, 2013
- INTERNATIONAL RECTIFIER CORPORATION
- Martin Standing
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming a Reliable Solderable Contact
- Publication number 20130143399
- Publication date Jun 6, 2013
- INTERNATIONAL RECTIFIER CORPORATION
- Martin Standing
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Wafer with Reduced Thickness Variation and Method for...
- Publication number 20120306072
- Publication date Dec 6, 2012
- INTERNATIONAL RECTIFIER CORPORATION
- Rupert Burbidge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench MOSFET and Method for Fabricating Same
- Publication number 20120211825
- Publication date Aug 23, 2012
- INTERNATIONAL RECTIFIER CORPORATION
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Package with Reduced On-Resistance and Top Metal Spre...
- Publication number 20120175688
- Publication date Jul 12, 2012
- INTERNATIONAL RECTIFIER CORPORATION
- Rupert Burbidge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating a shallow and narrow trench FETand related s...
- Publication number 20110284950
- Publication date Nov 24, 2011
- INTERNATIONAL RECTIFIER CORPORATION
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE FABRICATION USING SPACERS
- Publication number 20090263952
- Publication date Oct 22, 2009
- Vijay Viswanathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AUTOCLAVE CAPABLE CHIP-SCALE PACKAGE
- Publication number 20090218684
- Publication date Sep 3, 2009
- Mark Pavier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE INCLUDING A DOUBLE METAL CONTACT
- Publication number 20090212435
- Publication date Aug 27, 2009
- Robert Montgomery
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench type MOSgated device with strained layer on trench sidewall
- Publication number 20070218615
- Publication date Sep 20, 2007
- International Rectifier Corporation
- David Paul Jones
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Protective barrier layer for semiconductor device electrodes
- Publication number 20070052099
- Publication date Mar 8, 2007
- Martin Carroll
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Split electrode gate trench power device
- Publication number 20070023829
- Publication date Feb 1, 2007
- Hugo R.G. Burke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process of manufacture of ultra thin semiconductor wafers with bond...
- Publication number 20060281315
- Publication date Dec 14, 2006
- International Rectifier Corporation
- Hugo R.G. Burke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduced metal design rules for power devices
- Publication number 20060270207
- Publication date Nov 30, 2006
- International Rectifier Corporation
- David Paul Jones
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Top drain fet with integrated body short
- Publication number 20060113589
- Publication date Jun 1, 2006
- International Rectifier Corp.
- David Paul Jones
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Top drain mosgated device and process of manufacture therefor
- Publication number 20060043474
- Publication date Mar 2, 2006
- International Recifier Corporation
- Daniel M. Kinzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective substrate thinning for power mosgated devices
- Publication number 20060022263
- Publication date Feb 2, 2006
- International Rectifier Corporation
- Robert P. Haase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench FET with reduced mesa width and source contact inside active...
- Publication number 20050280079
- Publication date Dec 22, 2005
- International Rectifier Corporation
- David P. Jones
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Preparation of front contact for surface mounting
- Publication number 20050269677
- Publication date Dec 8, 2005
- Martin Standing
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Solderable top metalization and passivation for source mounted package
- Publication number 20050200011
- Publication date Sep 15, 2005
- International Rectifier Corporation
- Martin Standing
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self aligned contact structure for trench device
- Publication number 20050189585
- Publication date Sep 1, 2005
- International Rectifier Corporation
- David P. Jones
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench type mosgated device with strained layer on trench sidewall
- Publication number 20050116217
- Publication date Jun 2, 2005
- International Rectifier Corp.
- David Paul Jones
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Opaque shielding element for liquid crystal display
- Publication number 20020196398
- Publication date Dec 26, 2002
- European Semiconductor Manufacturing Limited
- David Paul Jones
- G02 - OPTICS
Information Patent Application
Method of fabricating a gate dielectric layer for a thin film trans...
- Publication number 20020090767
- Publication date Jul 11, 2002
- ESM Limited
- Richard Bullock
- G06 - COMPUTING CALCULATING COUNTING

David P. Jones

Person

Patents Grantslast 30 patents

Method for forming a reliable solderable contact

Solderable contact and passivation for semiconductor dies

Power semiconductor device with a double metal contact and related...

Method for fabricating a shallow and narrow trench FET and related...

Power semiconductor device with a double metal contact

Semiconductor wafer with reduced thickness variation and method for...

Buck converter power package

Power semiconductor device including a double metal contact

Trench MOSFET and method for fabricating same

Solderable top metalization and passivation for source mounted package

Autoclave capable chip-scale package

Protective barrier layer for semiconductor device electrodes

Semiconductor device fabrication using spacers

Trench type MOSgated device with strained layer on trench sidewall

Process of manufacture of ultra thin semiconductor wafers with bond...

Reduced metal design rules for power devices

Power semiconductor device including insulated source electrodes in...

Top drain fet with integrated body short

Top drain MOSgated device and process of manufacture therefor

Split electrode gate trench power device

Trench FET with reduced mesa width and source contact inside active...

Trench type mosgated device with strained layer on trench sidewall

Self aligned contact structure for trench device

Method of fabricating a gate dielectric layer for a thin film trans...

Conductive black matrix layer for LCD display connected to gate thr...

Patents Applicationslast 30 patents

Method for Fabricating a Shallow and Narrow Trench FET

Power Semiconductor Device with a Double Metal Contact and Related...

Power Semiconductor Device with Low RDSON and High Breakdown Voltage

Power Semiconductor Device with a Double Metal Contact

Buck Converter Power Package

Solderable Contact and Passivation for Semiconductor Dies

Method for Forming a Reliable Solderable Contact

Semiconductor Wafer with Reduced Thickness Variation and Method for...

Trench MOSFET and Method for Fabricating Same

Semiconductor Package with Reduced On-Resistance and Top Metal Spre...

Method for fabricating a shallow and narrow trench FETand related s...

SEMICONDUCTOR DEVICE FABRICATION USING SPACERS

AUTOCLAVE CAPABLE CHIP-SCALE PACKAGE

POWER SEMICONDUCTOR DEVICE INCLUDING A DOUBLE METAL CONTACT

Trench type MOSgated device with strained layer on trench sidewall

Protective barrier layer for semiconductor device electrodes

Split electrode gate trench power device

Process of manufacture of ultra thin semiconductor wafers with bond...

Reduced metal design rules for power devices

Top drain fet with integrated body short

Top drain mosgated device and process of manufacture therefor

Selective substrate thinning for power mosgated devices

Trench FET with reduced mesa width and source contact inside active...

Preparation of front contact for surface mounting

Solderable top metalization and passivation for source mounted package

Self aligned contact structure for trench device

Trench type mosgated device with strained layer on trench sidewall

Opaque shielding element for liquid crystal display

Method of fabricating a gate dielectric layer for a thin film trans...