Dexin Wang

Person

Eden Prairie, MN, US

People

Patents Grantslast 30 patents

Information Patent Grant
ST-RAM cells with perpendicular anisotropy
- Patent number 9,165,625
- Issue date Oct 20, 2015
- Seagate Technology LLC
- Dexin Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction with electronically reflective insulative...
- Patent number 9,030,864
- Issue date May 12, 2015
- Seagate Technology LLC
- Yuankai Zheng
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory with stray magnetic field compensation
- Patent number 8,908,429
- Issue date Dec 9, 2014
- Seagate Technology LLC
- Dimitar V. Dimitrov
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory with phonon glass electron crystal material
- Patent number 8,687,413
- Issue date Apr 1, 2014
- Seagate Technology LLC
- Yuankai Zheng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
STRAM with composite free magnetic element
- Patent number 8,681,539
- Issue date Mar 25, 2014
- Seagate Technology LLC
- Yuankai Zheng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Spin-torque memory with unidirectional write scheme
- Patent number 8,659,939
- Issue date Feb 25, 2014
- Seagate Technology LLC
- Haiwen Xi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic tunnel junction with compensation element
- Patent number 8,508,988
- Issue date Aug 13, 2013
- Seagate Technology LLC
- Yuankai Zheng
- G11 - INFORMATION STORAGE
Information Patent Grant
STRAM with composite free magnetic element
- Patent number 8,422,279
- Issue date Apr 16, 2013
- Seagate Technology LLC
- Yuankai Zheng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic memory with phonon glass electron crystal material
- Patent number 8,416,619
- Issue date Apr 9, 2013
- Seagate Technology LLC
- Yuankai Zheng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Programmable metallization memory cells via selective channel forming
- Patent number 8,399,908
- Issue date Mar 19, 2013
- Seagate Technology LLC
- Haiwen Xi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory with stray magnetic field compensation
- Patent number 8,400,867
- Issue date Mar 19, 2013
- Seagate Technology LLC
- Dimitar Dimitrov
- G11 - INFORMATION STORAGE
Information Patent Grant
Programmable metallization memory cells via selective channel forming
- Patent number 8,334,165
- Issue date Dec 18, 2012
- Seagate Technology LLC
- Haiwen Xi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programmable metallization memory cell with planarized silver elect...
- Patent number 8,309,945
- Issue date Nov 13, 2012
- Seagate Technology LLC
- Wei Tian
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Programmable metallization memory cell with planarized silver elect...
- Patent number 8,288,254
- Issue date Oct 16, 2012
- Seagate Technology LLC
- Wei Tian
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Non volatile memory including stabilizing structures
- Patent number 8,289,756
- Issue date Oct 16, 2012
- Seagate Technology LLC
- Yuankai Zheng
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction with electronically reflective insulative...
- Patent number 8,289,758
- Issue date Oct 16, 2012
- Seagate Technology LLC
- Yuankai Zheng
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-torque memory with unidirectional write scheme
- Patent number 8,218,356
- Issue date Jul 10, 2012
- Seagate Technology LLC
- Haiwen Xi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic tunnel junction with compensation element
- Patent number 8,213,222
- Issue date Jul 3, 2012
- Seagate Technology LLC
- Yuankai Zheng
- G11 - INFORMATION STORAGE
Information Patent Grant
ST-RAM magnetic element configurations to reduce switching current
- Patent number 8,188,558
- Issue date May 29, 2012
- Seagate Technology LLC
- Dexin Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Programmable metallization memory cell with planarized silver elect...
- Patent number 8,134,138
- Issue date Mar 13, 2012
- Seagate Technology LLC
- Tian Wei
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Programmable metallization memory cells via selective channel forming
- Patent number 8,097,902
- Issue date Jan 17, 2012
- Seagate Technology LLC
- Haiwen Xi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory with stray magnetic field compensation
- Patent number 8,098,541
- Issue date Jan 17, 2012
- Seagate Technology LLC
- Dimitar Dimitrov
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory with phonon glass electron crystal material
- Patent number 8,089,132
- Issue date Jan 3, 2012
- Seagate Technology LLC
- Yuankai Zheng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Variable write and read methods for resistive random access memory
- Patent number 8,054,675
- Issue date Nov 8, 2011
- Seagate Technology LLC
- Haiwen Xi
- G11 - INFORMATION STORAGE
Information Patent Grant
STRAM with composite free magnetic element
- Patent number 8,045,366
- Issue date Oct 25, 2011
- Seagate Technology LLC
- Yuankai Zheng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic tunnel junction with compensation element
- Patent number 8,023,316
- Issue date Sep 20, 2011
- Seagate Technology LLC
- Yuankai Zheng
- G11 - INFORMATION STORAGE
Information Patent Grant
ST-RAM magnetic element configurations to reduce switching current
- Patent number 7,999,336
- Issue date Aug 16, 2011
- Seagate Technology LLC
- Dexin Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Variable write and read methods for resistive random access memory
- Patent number 7,952,917
- Issue date May 31, 2011
- Seagate Technology LLC
- Haiwen Xi
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory with stray magnetic field compensation
- Patent number 7,940,600
- Issue date May 10, 2011
- Seagate Technology LLC
- Dimitar Dimitrov
- G11 - INFORMATION STORAGE
Information Patent Grant
STRAM with electronically reflective insulative spacer
- Patent number 7,940,551
- Issue date May 10, 2011
- Seagate Technology, LLC
- Yuankai Zheng
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
STRAM WITH COMPOSITE FREE MAGNETIC ELEMENT
- Publication number 20130229862
- Publication date Sep 5, 2013
- SEGATE TECHNOLOGY LLC
- Yuankai Zheng
- B82 - NANO-TECHNOLOGY
Information Patent Application
PROGRAMMABLE METALLIZATION MEMORY CELLS VIA SELECTIVE CHANNEL FORMING
- Publication number 20130187115
- Publication date Jul 25, 2013
- SEAGATE TECHNOLOGY LLC
- Haiwen Xi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY WITH STRAY MAGNETIC FIELD COMPENSATION
- Publication number 20130181306
- Publication date Jul 18, 2013
- SEAGATE TECHNOLOGY LLC
- Dimitar V. Dimitrov
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY WITH PHONON GLASS ELECTRON CRYSTAL MATERIAL
- Publication number 20130175647
- Publication date Jul 11, 2013
- SEAGATE TECHNOLOGY LLC
- Yuankai Zheng
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETIC TUNNEL JUNCTION WITH ELECTRONICALLY REFLECTIVE INSULATIVE...
- Publication number 20130001718
- Publication date Jan 3, 2013
- Seagate Technology LLC
- Yuankai Zheng
- G11 - INFORMATION STORAGE
Information Patent Application
NON VOLATILE MEMORY INCLUDING STABILIZING STRUCTURES
- Publication number 20120299135
- Publication date Nov 29, 2012
- Seagate Technology LLC
- Yuankai Zheng
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-TORQUE MEMORY WITH UNIDIRECTIONAL WRITE SCHEME
- Publication number 20120261778
- Publication date Oct 18, 2012
- Seagate Technology LLC
- Haiwen Xi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MAGNETIC TUNNEL JUNCTION WITH COMPENSATION ELEMENT
- Publication number 20120257447
- Publication date Oct 11, 2012
- Seagate Technology LLC
- Yuankai Zheng
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMABLE METALLIZATION MEMORY CELL WITH PLANARIZED SILVER ELECT...
- Publication number 20120138884
- Publication date Jun 7, 2012
- Seagate Technology LLC
- Wei Tian
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMABLE METALLIZATION MEMORY CELL WITH PLANARIZED SILVER ELECT...
- Publication number 20120142169
- Publication date Jun 7, 2012
- Seagate Technology LLC
- Wei Tian
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMABLE METALLIZATION MEMORY CELLS VIA SELECTIVE CHANNEL FORMING
- Publication number 20120104348
- Publication date May 3, 2012
- Seagate Technology LLC
- Haiwen Xi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY WITH STRAY MAGNETIC FIELD COMPENSATION
- Publication number 20120081951
- Publication date Apr 5, 2012
- Seagate Technology LLC
- Dimitar V. Dimitrov
- G11 - INFORMATION STORAGE
Information Patent Application
STRAM WITH COMPOSITE FREE MAGNETIC ELEMENT
- Publication number 20120039115
- Publication date Feb 16, 2012
- Seagate Technology LLC
- Yuankai Zheng
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION WITH COMPENSATION ELEMENT
- Publication number 20110298068
- Publication date Dec 8, 2011
- Seagate Technology LLC
- Yuankai Zheng
- G11 - INFORMATION STORAGE
Information Patent Application
ST-RAM MAGNETIC ELEMENT CONFIGURATIONS TO REDUCE SWITCHING CURRENT
- Publication number 20110254113
- Publication date Oct 20, 2011
- Seagate Technology LLC
- Dexin Wang
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETIC MEMORY WITH PHONON GLASS ELECTRON CRYSTAL MATERIAL
- Publication number 20110194335
- Publication date Aug 11, 2011
- Seagate Technology LLC
- Yuankai Zheng
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH STRAY MAGNETIC FIELD COMPENSATION
- Publication number 20110188300
- Publication date Aug 4, 2011
- Seagate Technology LLC
- Dimitar V. Dimitrov
- G11 - INFORMATION STORAGE
Information Patent Application
VARIABLE WRITE AND READ METHODS FOR RESISTIVE RANDOM ACCESS MEMORY
- Publication number 20110134682
- Publication date Jun 9, 2011
- Seagate Technology LLC
- Haiwen Xi
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION WITH ELECTRONICALLY REFLECTIVE INSULATIVE...
- Publication number 20110049658
- Publication date Mar 3, 2011
- Seagate Technology LLC
- Yuankai Zheng
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION WITH COMPENSATION ELEMENT
- Publication number 20110019465
- Publication date Jan 27, 2011
- Seagate Technology LLC
- Yuankai Zheng
- G11 - INFORMATION STORAGE
Information Patent Application
Resistive Sense Memory with Complementary Programmable Recording La...
- Publication number 20100254174
- Publication date Oct 7, 2010
- Seagate Technology LLC
- Yuankai Zheng
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-TORQUE MEMORY WITH UNIDIRECTIONAL WRITE SCHEME
- Publication number 20100246245
- Publication date Sep 30, 2010
- Seagate Technology LLC
- Haiwen Xi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
VARIABLE WRITE AND READ METHODS FOR RESISTIVE RANDOM ACCESS MEMORY
- Publication number 20100238712
- Publication date Sep 23, 2010
- Seagate Technology LLC
- Haiwen Xi
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMABLE POWER SOURCE USING ARRAY OF RESISTIVE SENSE MEMORY CELLS
- Publication number 20100220512
- Publication date Sep 2, 2010
- Seagate Technology LLC
- Yiran Chen
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMABLE METALLIZATION MEMORY CELL WITH PLANARIZED SILVER ELECT...
- Publication number 20100193758
- Publication date Aug 5, 2010
- Seagate Technology LLC
- Wei Tian
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMABLE METALLIZATION MEMORY CELLS VIA SELECTIVE CHANNEL FORMING
- Publication number 20100197104
- Publication date Aug 5, 2010
- Seagate Technology LLC
- Haiwen Xi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY WITH STRAY MAGNETIC FIELD COMPENSATION
- Publication number 20100135067
- Publication date Jun 3, 2010
- Seagate Technology LLC
- Dimitar V. Dimitrov
- G11 - INFORMATION STORAGE
Information Patent Application
NON VOLATILE MEMORY INCLUDING STABILIZING STRUCTURES
- Publication number 20100128520
- Publication date May 27, 2010
- Seagate Technology LLC
- Yuankai Zheng
- G11 - INFORMATION STORAGE
Information Patent Application
STRAM WITH COMPOSITE FREE MAGNETIC ELEMENT
- Publication number 20100109108
- Publication date May 6, 2010
- Seagate Technology LLC
- Yuankai Zheng
- G11 - INFORMATION STORAGE
Information Patent Application
ST-RAM Cells with Perpendicular Anisotropy
- Publication number 20100109110
- Publication date May 6, 2010
- Seagate Technology LLC
- Dexin Wang
- G11 - INFORMATION STORAGE

Person

Patents Grantslast 30 patents

ST-RAM cells with perpendicular anisotropy

Magnetic tunnel junction with electronically reflective insulative...

Non-volatile memory with stray magnetic field compensation

Magnetic memory with phonon glass electron crystal material

STRAM with composite free magnetic element

Spin-torque memory with unidirectional write scheme

Magnetic tunnel junction with compensation element

STRAM with composite free magnetic element

Magnetic memory with phonon glass electron crystal material

Programmable metallization memory cells via selective channel forming

Non-volatile memory with stray magnetic field compensation

Programmable metallization memory cells via selective channel forming

Programmable metallization memory cell with planarized silver elect...

Programmable metallization memory cell with planarized silver elect...

Non volatile memory including stabilizing structures

Magnetic tunnel junction with electronically reflective insulative...

Spin-torque memory with unidirectional write scheme

Magnetic tunnel junction with compensation element

ST-RAM magnetic element configurations to reduce switching current

Programmable metallization memory cell with planarized silver elect...

Programmable metallization memory cells via selective channel forming

Non-volatile memory with stray magnetic field compensation

Magnetic memory with phonon glass electron crystal material

Variable write and read methods for resistive random access memory

STRAM with composite free magnetic element

Magnetic tunnel junction with compensation element

ST-RAM magnetic element configurations to reduce switching current

Variable write and read methods for resistive random access memory

Non-volatile memory with stray magnetic field compensation

STRAM with electronically reflective insulative spacer

Patents Applicationslast 30 patents

STRAM WITH COMPOSITE FREE MAGNETIC ELEMENT

PROGRAMMABLE METALLIZATION MEMORY CELLS VIA SELECTIVE CHANNEL FORMING

NON-VOLATILE MEMORY WITH STRAY MAGNETIC FIELD COMPENSATION

MAGNETIC MEMORY WITH PHONON GLASS ELECTRON CRYSTAL MATERIAL

MAGNETIC TUNNEL JUNCTION WITH ELECTRONICALLY REFLECTIVE INSULATIVE...

NON VOLATILE MEMORY INCLUDING STABILIZING STRUCTURES

SPIN-TORQUE MEMORY WITH UNIDIRECTIONAL WRITE SCHEME

MAGNETIC TUNNEL JUNCTION WITH COMPENSATION ELEMENT

PROGRAMMABLE METALLIZATION MEMORY CELL WITH PLANARIZED SILVER ELECT...

PROGRAMMABLE METALLIZATION MEMORY CELL WITH PLANARIZED SILVER ELECT...

PROGRAMMABLE METALLIZATION MEMORY CELLS VIA SELECTIVE CHANNEL FORMING

NON-VOLATILE MEMORY WITH STRAY MAGNETIC FIELD COMPENSATION

STRAM WITH COMPOSITE FREE MAGNETIC ELEMENT

MAGNETIC TUNNEL JUNCTION WITH COMPENSATION ELEMENT

ST-RAM MAGNETIC ELEMENT CONFIGURATIONS TO REDUCE SWITCHING CURRENT

MAGNETIC MEMORY WITH PHONON GLASS ELECTRON CRYSTAL MATERIAL

NON-VOLATILE MEMORY WITH STRAY MAGNETIC FIELD COMPENSATION

VARIABLE WRITE AND READ METHODS FOR RESISTIVE RANDOM ACCESS MEMORY

MAGNETIC TUNNEL JUNCTION WITH ELECTRONICALLY REFLECTIVE INSULATIVE...

MAGNETIC TUNNEL JUNCTION WITH COMPENSATION ELEMENT

Resistive Sense Memory with Complementary Programmable Recording La...

SPIN-TORQUE MEMORY WITH UNIDIRECTIONAL WRITE SCHEME

VARIABLE WRITE AND READ METHODS FOR RESISTIVE RANDOM ACCESS MEMORY

PROGRAMMABLE POWER SOURCE USING ARRAY OF RESISTIVE SENSE MEMORY CELLS

PROGRAMMABLE METALLIZATION MEMORY CELL WITH PLANARIZED SILVER ELECT...

PROGRAMMABLE METALLIZATION MEMORY CELLS VIA SELECTIVE CHANNEL FORMING

NON-VOLATILE MEMORY WITH STRAY MAGNETIC FIELD COMPENSATION

NON VOLATILE MEMORY INCLUDING STABILIZING STRUCTURES

STRAM WITH COMPOSITE FREE MAGNETIC ELEMENT

ST-RAM Cells with Perpendicular Anisotropy