Donald R. Disney

Person

People

Patents Grantslast 30 patents

Information Patent Grant
Ultra-high voltage resistor
- Patent number 10,643,990
- Issue date May 5, 2020
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extended drain MOSFETs (EDMOS)
- Patent number 10,608,108
- Issue date Mar 31, 2020
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Chia Ching Yeo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Saucer-shaped isolation structures for semiconductor devices
- Patent number 10,074,716
- Issue date Sep 11, 2018
- SKYWORKS SOLUTIONS (HONG KONG) LIMITED
- Wai Tien Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structures for semiconductor devices including trenches c...
- Patent number 9,905,640
- Issue date Feb 27, 2018
- SKYWORKS SOLUTIONS (HONG KONG) LIMITED
- Wai Tien Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a GaN P-i-N diode using implantation
- Patent number 9,484,470
- Issue date Nov 1, 2016
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical GaN JFET with low gate-drain capacitance and high gate-sou...
- Patent number 9,391,179
- Issue date Jul 12, 2016
- Avogy, Inc.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for interleaved boost converter with co-packaged...
- Patent number 9,324,809
- Issue date Apr 26, 2016
- Avogy, Inc.
- Hemal N. Shah
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for co-packaging vertical gallium nitride power d...
- Patent number 9,324,645
- Issue date Apr 26, 2016
- Avogy, Inc.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN power device with solderable back metal
- Patent number 9,324,607
- Issue date Apr 26, 2016
- Avogy, Inc.
- Patrick James Lazlo Hyland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical gallium nitride JFET with gate and source electrodes on re...
- Patent number 9,318,619
- Issue date Apr 19, 2016
- Avogy, Inc.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction semiconductor device and associated fabrication method
- Patent number 9,281,393
- Issue date Mar 8, 2016
- Chengdu Monolithic Power Systems Co., Ltd.
- Rongyao Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structures for semiconductor devices
- Patent number 9,257,504
- Issue date Feb 9, 2016
- Advanced Analogic Technologies Incorporated
- Wai Tien Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical gallium nitride power device with breakdown voltage control
- Patent number 9,257,500
- Issue date Feb 9, 2016
- Avogy, Inc.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for fabricating floating guard rings in GaN mater...
- Patent number 9,171,751
- Issue date Oct 27, 2015
- Avogy, Inc.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a gallium nitride P-i-N diode using implantation
- Patent number 9,171,900
- Issue date Oct 27, 2015
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for a gallium nitride vertical JFET with self-ali...
- Patent number 9,117,850
- Issue date Aug 25, 2015
- Avogy, Inc.
- Don Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN power device with solderable back metal
- Patent number 9,105,579
- Issue date Aug 11, 2015
- Avogy, Inc.
- Patrick James Lazlo Hyland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power device with integrated Schottky diode and method for making t...
- Patent number 9,059,329
- Issue date Jun 16, 2015
- Monolithic Power Systems, Inc.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN vertical superjunction device structures and fabrication methods
- Patent number 9,029,210
- Issue date May 12, 2015
- Avogy, Inc.
- Hui Nie
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method and system for gallium nitride electronic devices using engi...
- Patent number 8,981,432
- Issue date Mar 17, 2015
- Avogy, Inc.
- Hui Nie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical GaN JFET with low gate-drain capacitance and high gate-sou...
- Patent number 8,969,926
- Issue date Mar 3, 2015
- Avogy, Inc.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for junction termination in GaN materials using c...
- Patent number 8,969,180
- Issue date Mar 3, 2015
- Avogy, Inc.
- Hui Nie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical gallium nitride JFET with gate and source electrodes on re...
- Patent number 8,946,725
- Issue date Feb 3, 2015
- Avogy, Inc.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for operating gallium nitride electronics
- Patent number 8,947,154
- Issue date Feb 3, 2015
- Avogy, Inc.
- Hemal N. Shah
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Method of fabricating a high-voltage transistor with an extended dr...
- Patent number 8,940,605
- Issue date Jan 27, 2015
- Power Integrations, Inc.
- Donald Ray Disney
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method and system for co-packaging gallium nitride electronics
- Patent number 8,937,317
- Issue date Jan 20, 2015
- Avogy, Inc.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bondable top metal contacts for gallium nitride power devices
- Patent number 8,916,871
- Issue date Dec 23, 2014
- Avogy, Inc.
- Brian Joel Alvarez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical GaN power device with breakdown voltage control
- Patent number 8,866,148
- Issue date Oct 21, 2014
- Avogy, Inc.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for a GAN vertical JFET with self-aligned source...
- Patent number 8,841,708
- Issue date Sep 23, 2014
- Avogy, Inc.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for a GaN vertical JFET with self-aligned source...
- Patent number 8,829,574
- Issue date Sep 9, 2014
- Avogy, Inc.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
EXTENDED DRAIN MOSFETS (EDMOS)
- Publication number 20190393338
- Publication date Dec 26, 2019
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Chia Ching YEO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRA-HIGH VOLTAGE RESISTOR
- Publication number 20190267369
- Publication date Aug 29, 2019
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Donald R. DISNEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED DC-DC BOOST CONVERTER WITH GALLIUM NITRIDE POWER TRANSISTOR
- Publication number 20190020272
- Publication date Jan 17, 2019
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Donald DISNEY
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
BONDING OF III-V-AND-SI SUBSTRATES WITH INTERCONNECT METAL LAYERS
- Publication number 20180269105
- Publication date Sep 20, 2018
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Lawrence Selvaraj SUSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SAUCER-SHAPED ISOLATION STRUCTURES FOR SEMICONDUCTOR DEVICES
- Publication number 20160027869
- Publication date Jan 28, 2016
- Advanced Analogic Technologies (Hong Kong) Limited
- Wai Tien Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURES FOR SEMICONDUCTOR DEVICES INCLUDING TRENCHES C...
- Publication number 20160027868
- Publication date Jan 28, 2016
- Advanced Analogic Technologies (Hong Kong) Limited
- Wai Tien Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR GALLIUM NITRIDE ELECTRONIC DEVICES USING ENGI...
- Publication number 20160013045
- Publication date Jan 14, 2016
- AVOGY, INC.
- Hui Nie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A GAN P-I-N DIODE USING IMPLANTATION
- Publication number 20150364612
- Publication date Dec 17, 2015
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN POWER DEVICE WITH SOLDERABLE BACK METAL
- Publication number 20150340271
- Publication date Nov 26, 2015
- AVOGY, INC.
- Patrick James Lazlo Hyland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL JFET WITH SELF-ALI...
- Publication number 20150340514
- Publication date Nov 26, 2015
- AVOGY, INC.
- Don Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND ASSOCIATED FABRICATION METHOD
- Publication number 20150249124
- Publication date Sep 3, 2015
- Rongyao Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR CO-PACKAGING GALLIUM NITRIDE ELECTRONICS
- Publication number 20150206768
- Publication date Jul 23, 2015
- AVOGY, INC.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR OPERATING GALLIUM NITRIDE ELECTRONICS
- Publication number 20150188521
- Publication date Jul 2, 2015
- AVOGY, INC.
- Hemal N. Shah
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR INTERLEAVED BOOST CONVERTER WITH CO-PACKAGED...
- Publication number 20150137134
- Publication date May 21, 2015
- AVOGY, INC.
- Hemal N. Shah
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL GALLIUM NITRIDE JFET WITH GATE AND SOURCE ELECTRODES ON RE...
- Publication number 20150137140
- Publication date May 21, 2015
- AVOGY, INC.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL GaN JFET WITH LOW GATE-DRAIN CAPACITANCE AND HIGH GATE-SOU...
- Publication number 20150132900
- Publication date May 14, 2015
- AVOGY, INC.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL GALLIUM NITRIDE POWER DEVICE WITH BREAKDOWN VOLTAGE CONTROL
- Publication number 20150104912
- Publication date Apr 16, 2015
- AVOGY, INC.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BONDABLE TOP METAL CONTACTS FOR GALLIUM NITRIDE POWER DEVICES
- Publication number 20150102360
- Publication date Apr 16, 2015
- AVOGY, INC.
- Brian Joel Alvarez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURES FOR SEMICONDUCTOR DEVICES
- Publication number 20150014810
- Publication date Jan 15, 2015
- Wai Tien Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL JFET WITH SELF-ALI...
- Publication number 20140370669
- Publication date Dec 18, 2014
- Don Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating a gallium nitride p-i-n diode using implantation
- Publication number 20140346527
- Publication date Nov 27, 2014
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR CO-PACKAGING VERTICAL GALLIUM NITRIDE POWER D...
- Publication number 20140346522
- Publication date Nov 27, 2014
- AVOGY, INC.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL GALLIUM NITRIDE JFET WITH GATE AND SOURCE ELECTRODES ON RE...
- Publication number 20140291691
- Publication date Oct 2, 2014
- AVOGY, INC.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN VERTICAL SUPERJUNCTION DEVICE STRUCTURES AND FABRICATION METHODS
- Publication number 20140295652
- Publication date Oct 2, 2014
- Hui Nie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR FABRICATING FLOATING GUARD RINGS IN GAN MATER...
- Publication number 20140235030
- Publication date Aug 21, 2014
- AVOGY, INC.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR JUNCTION TERMINATION IN GAN MATERIALS USING C...
- Publication number 20140206179
- Publication date Jul 24, 2014
- AVOGY, INC.
- Hui Nie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL JFET WITH SELF-ALI...
- Publication number 20140203328
- Publication date Jul 24, 2014
- AVOGY, INC.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE VERTICAL JFET WITH HEXAGONAL CELL STRUCTURE
- Publication number 20140191241
- Publication date Jul 10, 2014
- AVOGY, INC.
- Andrew P. Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR CO-PACKAGING GALLIUM NITRIDE ELECTRONICS
- Publication number 20140183543
- Publication date Jul 3, 2014
- AVOGY, INC.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC CIRCUIT CONTROL ELEMENT WITH TAP ELEMENT
- Publication number 20140177285
- Publication date Jun 26, 2014
- Power Integrations, Inc.
- Donald R. Disney
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER

Donald R. Disney

Person

Patents Grantslast 30 patents

Ultra-high voltage resistor

Extended drain MOSFETs (EDMOS)

Saucer-shaped isolation structures for semiconductor devices

Isolation structures for semiconductor devices including trenches c...

Method of fabricating a GaN P-i-N diode using implantation

Vertical GaN JFET with low gate-drain capacitance and high gate-sou...

Method and system for interleaved boost converter with co-packaged...

Method and system for co-packaging vertical gallium nitride power d...

GaN power device with solderable back metal

Vertical gallium nitride JFET with gate and source electrodes on re...

Super junction semiconductor device and associated fabrication method

Isolation structures for semiconductor devices

Vertical gallium nitride power device with breakdown voltage control

Method and system for fabricating floating guard rings in GaN mater...

Method of fabricating a gallium nitride P-i-N diode using implantation

Method and system for a gallium nitride vertical JFET with self-ali...

GaN power device with solderable back metal

Power device with integrated Schottky diode and method for making t...

GaN vertical superjunction device structures and fabrication methods

Method and system for gallium nitride electronic devices using engi...

Vertical GaN JFET with low gate-drain capacitance and high gate-sou...

Method and system for junction termination in GaN materials using c...

Vertical gallium nitride JFET with gate and source electrodes on re...

Method and system for operating gallium nitride electronics

Method of fabricating a high-voltage transistor with an extended dr...

Method and system for co-packaging gallium nitride electronics

Bondable top metal contacts for gallium nitride power devices

Vertical GaN power device with breakdown voltage control

Method and system for a GAN vertical JFET with self-aligned source...

Method and system for a GaN vertical JFET with self-aligned source...

Patents Applicationslast 30 patents

EXTENDED DRAIN MOSFETS (EDMOS)

ULTRA-HIGH VOLTAGE RESISTOR

INTEGRATED DC-DC BOOST CONVERTER WITH GALLIUM NITRIDE POWER TRANSISTOR

BONDING OF III-V-AND-SI SUBSTRATES WITH INTERCONNECT METAL LAYERS

SAUCER-SHAPED ISOLATION STRUCTURES FOR SEMICONDUCTOR DEVICES

ISOLATION STRUCTURES FOR SEMICONDUCTOR DEVICES INCLUDING TRENCHES C...

METHOD AND SYSTEM FOR GALLIUM NITRIDE ELECTRONIC DEVICES USING ENGI...

METHOD OF FABRICATING A GAN P-I-N DIODE USING IMPLANTATION

GAN POWER DEVICE WITH SOLDERABLE BACK METAL

METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL JFET WITH SELF-ALI...

SEMICONDUCTOR DEVICE AND ASSOCIATED FABRICATION METHOD

METHOD AND SYSTEM FOR CO-PACKAGING GALLIUM NITRIDE ELECTRONICS

METHOD AND SYSTEM FOR OPERATING GALLIUM NITRIDE ELECTRONICS

METHOD AND SYSTEM FOR INTERLEAVED BOOST CONVERTER WITH CO-PACKAGED...

VERTICAL GALLIUM NITRIDE JFET WITH GATE AND SOURCE ELECTRODES ON RE...

VERTICAL GaN JFET WITH LOW GATE-DRAIN CAPACITANCE AND HIGH GATE-SOU...

VERTICAL GALLIUM NITRIDE POWER DEVICE WITH BREAKDOWN VOLTAGE CONTROL

BONDABLE TOP METAL CONTACTS FOR GALLIUM NITRIDE POWER DEVICES

ISOLATION STRUCTURES FOR SEMICONDUCTOR DEVICES

METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL JFET WITH SELF-ALI...

Method of fabricating a gallium nitride p-i-n diode using implantation

METHOD AND SYSTEM FOR CO-PACKAGING VERTICAL GALLIUM NITRIDE POWER D...

VERTICAL GALLIUM NITRIDE JFET WITH GATE AND SOURCE ELECTRODES ON RE...

GAN VERTICAL SUPERJUNCTION DEVICE STRUCTURES AND FABRICATION METHODS

METHOD AND SYSTEM FOR FABRICATING FLOATING GUARD RINGS IN GAN MATER...

METHOD AND SYSTEM FOR JUNCTION TERMINATION IN GAN MATERIALS USING C...

METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL JFET WITH SELF-ALI...

GALLIUM NITRIDE VERTICAL JFET WITH HEXAGONAL CELL STRUCTURE

METHOD AND SYSTEM FOR CO-PACKAGING GALLIUM NITRIDE ELECTRONICS

ELECTRONIC CIRCUIT CONTROL ELEMENT WITH TAP ELEMENT