Dongna Shen

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Highly physical ion resistive spacer to define chemical damage free...
- Patent number 11,985,905
- Issue date May 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Highly physical etch resistive photoresist mask to define large hei...
- Patent number 11,930,715
- Issue date Mar 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi Yang
Information Patent Grant
Post treatment to reduce shunting devices for physical etching process
- Patent number 11,903,324
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Jen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration scheme for three terminal spin-orbit-torque (SOT) switc...
- Patent number 11,895,928
- Issue date Feb 6, 2024
- Headway Technologies, Inc.
- Jesmin Haq
- G11 - INFORMATION STORAGE
Information Patent Grant
Sub 60nm etchless MRAM devices by ion beam etching fabricated T-sha...
- Patent number 11,856,864
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned encapsulation hard mask to separate physically under-e...
- Patent number 11,818,961
- Issue date Nov 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
MTJ CD variation by HM trimming
- Patent number 11,800,811
- Issue date Oct 24, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Dongna Shen
- G11 - INFORMATION STORAGE
Information Patent Grant
Under-cut via electrode for sub 60nm etchless MRAM devices by decou...
- Patent number 11,785,863
- Issue date Oct 10, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi Yang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Low resistance MgO capping layer for perpendicularly magnetized mag...
- Patent number 11,696,511
- Issue date Jul 4, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sahil Patel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Highly physical ion resistive spacer to define chemical damage free...
- Patent number 11,563,171
- Issue date Jan 24, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned encapsulation hard mask to separate physically under-e...
- Patent number 11,444,241
- Issue date Sep 13, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Sub 60nm etchless MRAM devices by ion beam etching fabricated t-sha...
- Patent number 11,430,947
- Issue date Aug 30, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Post treatment to reduce shunting devices for physical etching process
- Patent number 11,424,405
- Issue date Aug 23, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Jen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon oxynitride based encapsulation layer for magnetic tunnel ju...
- Patent number 11,411,174
- Issue date Aug 9, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Vignesh Sundar
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Combined physical and chemical etch to reduce magnetic tunnel junct...
- Patent number 11,316,103
- Issue date Apr 26, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Dongna Shen
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Method to integrate MRAM devices to the interconnects of 30nm and b...
- Patent number 11,289,645
- Issue date Mar 29, 2022
- Headway Technologies, Inc.
- Yi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion beam etching fabricated sub 30nm Vias to reduce conductive mate...
- Patent number 11,217,746
- Issue date Jan 4, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi Yang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Multiple spacer assisted physical etching of sub 60nm MRAM devices
- Patent number 11,145,809
- Issue date Oct 12, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Large height tree-like sub 30nm vias to reduce conductive material...
- Patent number 11,121,314
- Issue date Sep 14, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Highly selective ion beam etch hard mask for sub 60nm MRAM devices
- Patent number 11,088,321
- Issue date Aug 10, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MTJ CD variation by HM trimming
- Patent number 11,081,642
- Issue date Aug 3, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Dongna Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion beam etching process design to minimize sidewall re-deposition
- Patent number 11,043,632
- Issue date Jun 22, 2021
- Headway Technologies, Inc.
- Vignesh Sundar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduce intermixing on MTJ sidewall by oxidation
- Patent number 11,031,548
- Issue date Jun 8, 2021
- Headway Technologies, Inc.
- Dongna Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Under-cut via electrode for sub 60 nm etchless MRAM devices by deco...
- Patent number 11,024,797
- Issue date Jun 1, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi Yang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Highly physical ion resistive spacer to define chemical damage free...
- Patent number 10,964,887
- Issue date Mar 30, 2021
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Yi Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Self-adaptive halogen treatment to improve photoresist pattern and...
- Patent number 10,921,707
- Issue date Feb 16, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Highly physical etch resistive photoresist mask to define large hei...
- Patent number 10,886,461
- Issue date Jan 5, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned encapsulation hard mask to separate physically under-e...
- Patent number 10,868,237
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sub 60nm etchless MRAM devices by ion beam etching fabricated T-sha...
- Patent number 10,868,242
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance MgO capping layer for perpendicularly magnetized mag...
- Patent number 10,797,232
- Issue date Oct 6, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sahil Patel
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGHLY PHYSICAL ION RESISTIVE SPACER TO DEFINE CHEMICAL DAMAGE FREE...
- Publication number 20240298546
- Publication date Sep 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Yang
- G11 - INFORMATION STORAGE
Information Patent Application
SUB 60NM ETCHLESS MRAM DEVICES BY ION BEAM ETCHING FABRICATED T-SHA...
- Publication number 20240099151
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED ENCAPSULATION HARD MASK TO SEPARATE PHYSICALLY UNDER-E...
- Publication number 20230389435
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Yang
- G11 - INFORMATION STORAGE
Information Patent Application
UNDER-CUT VIA ELECTRODE FOR SUB 60NM ETCHLESS MRAM DEVICES BY DECOU...
- Publication number 20230371399
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Yang
- B82 - NANO-TECHNOLOGY
Information Patent Application
Highly Physical Ion Resistive Spacer To Define Chemical Damage Free...
- Publication number 20230165157
- Publication date May 25, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON OXYNITRIDE BASED ENCAPSULATION LAYER FOR MAGNETIC TUNNEL JU...
- Publication number 20220384718
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Vignesh Sundar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED ENCAPSULATION HARD MASK TO SEPARATE PHYSICALLY UNDER-E...
- Publication number 20220367793
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Yang
- G11 - INFORMATION STORAGE
Information Patent Application
Sub 60nm Etchless MRAM Devices by Ion Beam Etching Fabricated T-Sha...
- Publication number 20220367792
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Post Treatment to Reduce Shunting Devices for Physical Etching Process
- Publication number 20220359821
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Jen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MTJ CD Variation By HM Trimming
- Publication number 20210359202
- Publication date Nov 18, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Dongna Shen
- G11 - INFORMATION STORAGE
Information Patent Application
Under-Cut Via Electrode for Sub 60nm Etchless MRAM Devices by Decou...
- Publication number 20210288241
- Publication date Sep 16, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Yang
- B82 - NANO-TECHNOLOGY
Information Patent Application
Highly Physical Ion Resistive Spacer to Define Chemical Damage Free...
- Publication number 20210217951
- Publication date Jul 15, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Yang
- G11 - INFORMATION STORAGE
Information Patent Application
HIGHLY PHYSICAL ETCH RESISTIVE PHOTORESIST MASK TO DEFINE LARGE HEI...
- Publication number 20210151668
- Publication date May 20, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduce Intermixing on MTJ Sidewall by Oxidation
- Publication number 20210135097
- Publication date May 6, 2021
- HEADWAY TECHNOLOGIES, INC.
- Dongna Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Sub 60nm Etchless MRAM Devices by Ion Beam Etching Fabricated T-Sha...
- Publication number 20210135099
- Publication date May 6, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel Integration Scheme for Three Terminal Spin-Orbit-Torque (SOT)...
- Publication number 20210104663
- Publication date Apr 8, 2021
- HEADWAY TECHNOLOGIES, INC.
- Jesmin Haq
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-Aligned Encapsulation Hard Mask To Separate Physically Under-E...
- Publication number 20210098696
- Publication date Apr 1, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Yang
- G11 - INFORMATION STORAGE
Information Patent Application
Ion Beam Etching Process Design to Minimize Sidewall Re-Deposition
- Publication number 20210083180
- Publication date Mar 18, 2021
- HEADWAY TECHNOLOGIES, INC.
- Vignesh Sundar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Resistance MgO Capping Layer for Perpendicularly Magnetized Mag...
- Publication number 20210020831
- Publication date Jan 21, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sahil Patel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multiple Spacer Assisted Physical Etching of Sub 60nm MRAM Devices
- Publication number 20200411753
- Publication date Dec 31, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Large Height Tree-Like Sub 30nm Vias to Reduce Conductive Material...
- Publication number 20200343443
- Publication date Oct 29, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Post Treatment to Reduce Shunting Devices for Physical Etching Process
- Publication number 20200328345
- Publication date Oct 15, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Jen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ion Beam Etching Fabricated Sub 30nm Vias to Reduce Conductive Mate...
- Publication number 20200303636
- Publication date Sep 24, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Yang
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method to Integrate MRAM Devices to the Interconnects of 30nm and B...
- Publication number 20200212297
- Publication date Jul 2, 2020
- HEADWAY TECHNOLOGIES, INC.
- Yi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MTJ Patterning without Etch Induced Device Degradation Assisted by...
- Publication number 20200185454
- Publication date Jun 11, 2020
- HEADWAY TECHNOLOGIES, INC.
- Yi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMBINED PHYSICAL AND CHEMICAL ETCH TO REDUCE MAGNETIC TUNNEL JUNCT...
- Publication number 20200144492
- Publication date May 7, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Dongna Shen
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
MTJ CD VARIATION BY HM TRIMMING
- Publication number 20200144493
- Publication date May 7, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Dongna Shen
- G11 - INFORMATION STORAGE
Information Patent Application
Under-Cut Via Electrode for Sub 60nm Etchless MRAM Devices by Decou...
- Publication number 20200136021
- Publication date Apr 30, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Yang
- B82 - NANO-TECHNOLOGY
Information Patent Application
Low Resistance MgO Capping Layer for Perpendicularly Magnetized Mag...
- Publication number 20200136025
- Publication date Apr 30, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sahil Patel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Highly Selective Ion Beam Etch Hard Mask for Sub 60nm MRAM Devices
- Publication number 20200136031
- Publication date Apr 30, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Yang
- H01 - BASIC ELECTRIC ELEMENTS

Dongna Shen

Person

Patents Grantslast 30 patents

Highly physical ion resistive spacer to define chemical damage free...

Highly physical etch resistive photoresist mask to define large hei...

Post treatment to reduce shunting devices for physical etching process

Integration scheme for three terminal spin-orbit-torque (SOT) switc...

Sub 60nm etchless MRAM devices by ion beam etching fabricated T-sha...

Self-aligned encapsulation hard mask to separate physically under-e...

MTJ CD variation by HM trimming

Under-cut via electrode for sub 60nm etchless MRAM devices by decou...

Low resistance MgO capping layer for perpendicularly magnetized mag...

Highly physical ion resistive spacer to define chemical damage free...

Self-aligned encapsulation hard mask to separate physically under-e...

Sub 60nm etchless MRAM devices by ion beam etching fabricated t-sha...

Post treatment to reduce shunting devices for physical etching process

Silicon oxynitride based encapsulation layer for magnetic tunnel ju...

Combined physical and chemical etch to reduce magnetic tunnel junct...

Method to integrate MRAM devices to the interconnects of 30nm and b...

Ion beam etching fabricated sub 30nm Vias to reduce conductive mate...

Multiple spacer assisted physical etching of sub 60nm MRAM devices

Large height tree-like sub 30nm vias to reduce conductive material...

Highly selective ion beam etch hard mask for sub 60nm MRAM devices

MTJ CD variation by HM trimming

Ion beam etching process design to minimize sidewall re-deposition

Reduce intermixing on MTJ sidewall by oxidation

Under-cut via electrode for sub 60 nm etchless MRAM devices by deco...

Highly physical ion resistive spacer to define chemical damage free...

Self-adaptive halogen treatment to improve photoresist pattern and...

Highly physical etch resistive photoresist mask to define large hei...

Self-aligned encapsulation hard mask to separate physically under-e...

Sub 60nm etchless MRAM devices by ion beam etching fabricated T-sha...

Low resistance MgO capping layer for perpendicularly magnetized mag...

Patents Applicationslast 30 patents

HIGHLY PHYSICAL ION RESISTIVE SPACER TO DEFINE CHEMICAL DAMAGE FREE...

SUB 60NM ETCHLESS MRAM DEVICES BY ION BEAM ETCHING FABRICATED T-SHA...

SELF-ALIGNED ENCAPSULATION HARD MASK TO SEPARATE PHYSICALLY UNDER-E...

UNDER-CUT VIA ELECTRODE FOR SUB 60NM ETCHLESS MRAM DEVICES BY DECOU...

Highly Physical Ion Resistive Spacer To Define Chemical Damage Free...

SILICON OXYNITRIDE BASED ENCAPSULATION LAYER FOR MAGNETIC TUNNEL JU...

SELF-ALIGNED ENCAPSULATION HARD MASK TO SEPARATE PHYSICALLY UNDER-E...

Sub 60nm Etchless MRAM Devices by Ion Beam Etching Fabricated T-Sha...

Post Treatment to Reduce Shunting Devices for Physical Etching Process

MTJ CD Variation By HM Trimming

Under-Cut Via Electrode for Sub 60nm Etchless MRAM Devices by Decou...

Highly Physical Ion Resistive Spacer to Define Chemical Damage Free...

HIGHLY PHYSICAL ETCH RESISTIVE PHOTORESIST MASK TO DEFINE LARGE HEI...

Reduce Intermixing on MTJ Sidewall by Oxidation

Sub 60nm Etchless MRAM Devices by Ion Beam Etching Fabricated T-Sha...

Novel Integration Scheme for Three Terminal Spin-Orbit-Torque (SOT)...

Self-Aligned Encapsulation Hard Mask To Separate Physically Under-E...

Ion Beam Etching Process Design to Minimize Sidewall Re-Deposition

Low Resistance MgO Capping Layer for Perpendicularly Magnetized Mag...

Multiple Spacer Assisted Physical Etching of Sub 60nm MRAM Devices

Large Height Tree-Like Sub 30nm Vias to Reduce Conductive Material...

Post Treatment to Reduce Shunting Devices for Physical Etching Process

Ion Beam Etching Fabricated Sub 30nm Vias to Reduce Conductive Mate...

Method to Integrate MRAM Devices to the Interconnects of 30nm and B...

MTJ Patterning without Etch Induced Device Degradation Assisted by...

COMBINED PHYSICAL AND CHEMICAL ETCH TO REDUCE MAGNETIC TUNNEL JUNCT...

MTJ CD VARIATION BY HM TRIMMING

Under-Cut Via Electrode for Sub 60nm Etchless MRAM Devices by Decou...

Low Resistance MgO Capping Layer for Perpendicularly Magnetized Mag...

Highly Selective Ion Beam Etch Hard Mask for Sub 60nm MRAM Devices