Douglas Andrew Buchanan

Person

Cortlandt Manor, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor structure including mixed rare earth oxide formed on...
- Patent number 7,923,743
- Issue date Apr 12, 2011
- International Business Machines Corporation
- Nestor Alexander Bojarczuk, Jr.
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for etching chemically inert metal oxides
- Patent number 7,887,711
- Issue date Feb 15, 2011
- International Business Machines Corporation
- Douglas A. Buchanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High temperature processing compatible metal gate electrode for pFE...
- Patent number 7,863,083
- Issue date Jan 4, 2011
- International Business Machines Corporation
- Ricky Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure including mixed rare earth oxide formed on...
- Patent number 7,648,864
- Issue date Jan 19, 2010
- International Business Machines Corporation
- Nestor Alexander Bojarczuk, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure including mixed rare earth oxide formed on...
- Patent number 7,432,550
- Issue date Oct 7, 2008
- International Business Machines Corporation
- Nestor Alexander Bojarczuk, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Precursor source mixtures
- Patent number 6,984,591
- Issue date Jan 10, 2006
- International Business Machines Corporation
- Douglas A. Buchanan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
High-dielectric constant insulators for feol capacitors
- Patent number 6,958,506
- Issue date Oct 25, 2005
- International Business Machines Corporation
- Evgeni P. Gousev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for forming an oxynitride insulating layer on...
- Patent number 6,887,797
- Issue date May 3, 2005
- International Business Machines Corporation
- Douglas A. Buchanan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming lattice-matched structure on silicon and structur...
- Patent number 6,852,575
- Issue date Feb 8, 2005
- International Business Machines Corporation
- Nestor Alexander Bojarczuk, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for passivating the semiconductor-dielectric interface of a...
- Patent number 6,803,266
- Issue date Oct 12, 2004
- International Business Machines Corporation
- Paul M. Solomon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxynitride gate dielectric and method of forming
- Patent number 6,756,646
- Issue date Jun 29, 2004
- International Business Machines Corporation
- Douglas Andrew Buchanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-dielectric constant insulators for FEOL capacitors
- Patent number 6,667,207
- Issue date Dec 23, 2003
- International Business Machines Corporation
- Arne W. Ballantine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS device having a passivated semiconductor-dielectric interface
- Patent number 6,603,181
- Issue date Aug 5, 2003
- International Business Machines Corporation
- Paul M. Solomon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitrogen-rich barrier layer and structures formed
- Patent number 6,566,281
- Issue date May 20, 2003
- International Business Machines Corporation
- Douglas Andrew Buchanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-dielectric constant insulators for FEOL capacitors
- Patent number 6,511,873
- Issue date Jan 28, 2003
- International Business Machines Corporation
- Arne W. Ballantine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High mobility FETS using A1203 as a gate oxide
- Patent number 6,511,876
- Issue date Jan 28, 2003
- International Business Machines Corporation
- Douglas A. Buchanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interfacial oxidation process for high-k gate dielectric process in...
- Patent number 6,444,592
- Issue date Sep 3, 2002
- International Business Machines Corporation
- Arne W. Ballantine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for forming an oxynitride insulating layer on...
- Patent number 6,436,196
- Issue date Aug 20, 2002
- International Business Machines Corporation
- Douglas A. Buchanan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Apparatus and method for forming an oxynitride insulating layer on...
- Patent number 6,346,487
- Issue date Feb 12, 2002
- International Business Machines Corporation
- Douglas A. Buchanan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming oxynitride gate dielectric
- Patent number 6,245,616
- Issue date Jun 12, 2001
- International Business Machines Corporation
- Douglas Andrew Buchanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of mid-cap metal gates compatible with ultra-thin diele...
- Patent number 6,091,122
- Issue date Jul 18, 2000
- International Business Machines Corporation
- Douglas Andrew Buchanan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of fabricating mid-gap metal gates compatible with ultra-thi...
- Patent number 5,789,312
- Issue date Aug 4, 1998
- International Business Machines Corporation
- Douglas Andrew Buchanan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Diamond-like carbon films from a hydrocarbon helium plasma
- Patent number 5,569,501
- Issue date Oct 29, 1996
- International Business Machines Corporation
- Fredric D. Bailey
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Diamond-like carbon films from a hydrocarbon helium plasma
- Patent number 5,470,661
- Issue date Nov 28, 1995
- International Business Machines Corporation
- Fredric D. Bailey
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for passivating a compound semiconductor surface and device...
- Patent number 4,859,253
- Issue date Aug 22, 1989
- International Business Machines Corporation
- Douglas A. Buchanan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING MIXED RARE EARTH OXIDE FORMED ON...
- Publication number 20100065815
- Publication date Mar 18, 2010
- International Business Machines Corporation
- Nestor Alexander Bojarczuk, JR.
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING MIXED RARE EARTH OXIDE FORMED ON...
- Publication number 20080308831
- Publication date Dec 18, 2008
- International Business Machines Corporation
- Nestor Alexander Bojarczuk, JR.
- B82 - NANO-TECHNOLOGY
Information Patent Application
High Temperature Processing Compatible Metal Gate Electrode For pFE...
- Publication number 20080311745
- Publication date Dec 18, 2008
- International Business Machines Corporation
- Ricky Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming lattice-matched structure on silicon and structur...
- Publication number 20050095815
- Publication date May 5, 2005
- International Business Machines Corporation
- Nestor Alexander Bojarczuk
- B82 - NANO-TECHNOLOGY
Information Patent Application
High-dielectric constant insulators for feol capacitors
- Publication number 20040087100
- Publication date May 6, 2004
- Evgeni P. Gousev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for etching chemically inert metal oxides
- Publication number 20030230549
- Publication date Dec 18, 2003
- International Business Machines Corporation
- Douglas A. Buchanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitrogen-rich barrier layer and structures formed
- Publication number 20030203653
- Publication date Oct 30, 2003
- International Business Machines Corporation
- Douglas Andrew Buchanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Oxynitride gate dielectric and method of forming
- Publication number 20030190780
- Publication date Oct 9, 2003
- International Business Machines Corporation
- Douglas Andrew Buchanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitrogen-rich barrier layer and structures formed
- Publication number 20030190821
- Publication date Oct 9, 2003
- International Business Machines Corporation
- Douglas Andrew Buchanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR PASSIVATING THE SEMICONDUCTOR-DIELECTRIC INTERFACE OF A...
- Publication number 20030132492
- Publication date Jul 17, 2003
- International Business Machines Corporation
- Paul M. Solomon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High temperature processing compatible metal gate electrode for pFE...
- Publication number 20030098489
- Publication date May 29, 2003
- International Business Machines Corporation
- Ricky Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-dielectric constant insulators for FEOL capacitors
- Publication number 20030017639
- Publication date Jan 23, 2003
- International Business Machines Corporation
- Arne W. Ballantine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming lattice-matched structure on silicon and structur...
- Publication number 20030008520
- Publication date Jan 9, 2003
- International Business Machines Corporation
- Nestor Alexander Bojarczuk
- B82 - NANO-TECHNOLOGY
Information Patent Application
HIGH MOBILITY FETS USING AL2O3 AS A GATE OXIDE
- Publication number 20020197789
- Publication date Dec 26, 2002
- International Business Machines Corporation
- Douglas A. Buchanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-DIELECTRIC CONSTANT INSULATORS FOR FEOL CAPACITORS
- Publication number 20020192881
- Publication date Dec 19, 2002
- International Business Machines Coporation
- Arne W. Ballantine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Apparatus and method for forming an oxynitride insulating layer on...
- Publication number 20020182888
- Publication date Dec 5, 2002
- International Business Machines Corporation
- Douglas A. Buchanan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
APPARATUS AND METHOD FOR FORMING AN OXYNITRIDE INSULATING LAYER ON...
- Publication number 20020127872
- Publication date Sep 12, 2002
- International Business Machines Corporation
- Douglas A. Buchanan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
MOS DEVICE HAVING A PASSIVATED SEMICONDUCTOR-DIELECTRIC INTERFACE
- Publication number 20020094643
- Publication date Jul 18, 2002
- International Business Machines Corporation
- Paul M. Solomon
- H01 - BASIC ELECTRIC ELEMENTS

Douglas Andrew Buchanan

Person

Patents Grantslast 30 patents

Semiconductor structure including mixed rare earth oxide formed on...

Method for etching chemically inert metal oxides

High temperature processing compatible metal gate electrode for pFE...

Semiconductor structure including mixed rare earth oxide formed on...

Semiconductor structure including mixed rare earth oxide formed on...

Precursor source mixtures

High-dielectric constant insulators for feol capacitors

Apparatus and method for forming an oxynitride insulating layer on...

Method of forming lattice-matched structure on silicon and structur...

Process for passivating the semiconductor-dielectric interface of a...

Oxynitride gate dielectric and method of forming

High-dielectric constant insulators for FEOL capacitors

MOS device having a passivated semiconductor-dielectric interface

Nitrogen-rich barrier layer and structures formed

High-dielectric constant insulators for FEOL capacitors

High mobility FETS using A1203 as a gate oxide

Interfacial oxidation process for high-k gate dielectric process in...

Apparatus and method for forming an oxynitride insulating layer on...

Apparatus and method for forming an oxynitride insulating layer on...

Method of forming oxynitride gate dielectric

Fabrication of mid-cap metal gates compatible with ultra-thin diele...

Method of fabricating mid-gap metal gates compatible with ultra-thi...

Diamond-like carbon films from a hydrocarbon helium plasma

Diamond-like carbon films from a hydrocarbon helium plasma

Method for passivating a compound semiconductor surface and device...

Patents Applicationslast 30 patents

SEMICONDUCTOR STRUCTURE INCLUDING MIXED RARE EARTH OXIDE FORMED ON...

SEMICONDUCTOR STRUCTURE INCLUDING MIXED RARE EARTH OXIDE FORMED ON...

High Temperature Processing Compatible Metal Gate Electrode For pFE...

Method of forming lattice-matched structure on silicon and structur...

High-dielectric constant insulators for feol capacitors

Method for etching chemically inert metal oxides

Nitrogen-rich barrier layer and structures formed

Oxynitride gate dielectric and method of forming

Nitrogen-rich barrier layer and structures formed

PROCESS FOR PASSIVATING THE SEMICONDUCTOR-DIELECTRIC INTERFACE OF A...

High temperature processing compatible metal gate electrode for pFE...

High-dielectric constant insulators for FEOL capacitors

Method of forming lattice-matched structure on silicon and structur...

HIGH MOBILITY FETS USING AL2O3 AS A GATE OXIDE

HIGH-DIELECTRIC CONSTANT INSULATORS FOR FEOL CAPACITORS

Apparatus and method for forming an oxynitride insulating layer on...

APPARATUS AND METHOD FOR FORMING AN OXYNITRIDE INSULATING LAYER ON...

MOS DEVICE HAVING A PASSIVATED SEMICONDUCTOR-DIELECTRIC INTERFACE