Eden Zielinski

Person

Richardson, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods for forming single damascene via or trench cavities and for...
- Patent number 7,214,609
- Issue date May 8, 2007
- Texas Instruments Incorporated
- Ping Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature nitride used as Cu barrier layer
- Patent number 7,186,642
- Issue date Mar 6, 2007
- Micron Technology, Inc.
- Zhiping Yin
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Low temperature nitride used as Cu barrier layer
- Patent number 6,984,893
- Issue date Jan 10, 2006
- Micron Technology, Inc.
- Zhiping Yin
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Fabricating an embedded ferroelectric memory cell
- Patent number 6,734,477
- Issue date May 11, 2004
- Agilent Technologies, Inc.
- Ted Moise
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature nitride used as Cu barrier layer
- Patent number 6,492,267
- Issue date Dec 10, 2002
- Micron Technology, Inc.
- Zhiping Yin
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Integrated circuit interconnect and method
- Patent number 6,358,849
- Issue date Mar 19, 2002
- Texas Instruments Incorporated
- Robert H. Havemann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hydrogen passivation of chemical-mechanically polished copper-conta...
- Patent number 6,251,771
- Issue date Jun 26, 2001
- Texas Instruments Incorporated
- Patricia B. Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sidewalls for guiding the via etch
- Patent number 6,246,120
- Issue date Jun 12, 2001
- Texas Instruments Incorporated
- Kenneth D. Brennan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sidewalls for guiding the via etch
- Patent number 6,074,943
- Issue date Jun 13, 2000
- Texas Instruments Incorporated
- Kenneth D. Brennan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CMP CLEAN PROCESS FOR HIGH PERFORMANCE COPPER/LOW-K DEVICES
- Publication number 20070181532
- Publication date Aug 9, 2007
- Texas Instruments, Incorporated
- Mona M. EISSA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Low temperature nitride used as cu barrier layer
- Publication number 20060110920
- Publication date May 25, 2006
- Zhiping Yin
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Treatment of dies prior to nickel silicide formation
- Publication number 20050247675
- Publication date Nov 10, 2005
- TEXAS INSTRUMENTS INCORPORATED
- Mona M. Eissa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Post-etch clean process for porous low dielectric constant materials
- Publication number 20050045206
- Publication date Mar 3, 2005
- Patricia Beauregard Smith
- B08 - CLEANING
Information Patent Application
Methods for forming single damascene via or trench cavities and for...
- Publication number 20040110369
- Publication date Jun 10, 2004
- Ping Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low temperature nitride used as cu barrier layer
- Publication number 20030071358
- Publication date Apr 17, 2003
- Zhiping Yin
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Fabricating an embedded ferroelectric memory cell
- Publication number 20030030084
- Publication date Feb 13, 2003
- Ted Moise
- H01 - BASIC ELECTRIC ELEMENTS

Eden Zielinski

Person

Patents Grantslast 30 patents

Methods for forming single damascene via or trench cavities and for...

Low temperature nitride used as Cu barrier layer

Low temperature nitride used as Cu barrier layer

Fabricating an embedded ferroelectric memory cell

Low temperature nitride used as Cu barrier layer

Integrated circuit interconnect and method

Hydrogen passivation of chemical-mechanically polished copper-conta...

Sidewalls for guiding the via etch

Sidewalls for guiding the via etch

Patents Applicationslast 30 patents

CMP CLEAN PROCESS FOR HIGH PERFORMANCE COPPER/LOW-K DEVICES

Low temperature nitride used as cu barrier layer

Treatment of dies prior to nickel silicide formation

Post-etch clean process for porous low dielectric constant materials

Methods for forming single damascene via or trench cavities and for...

Low temperature nitride used as cu barrier layer

Fabricating an embedded ferroelectric memory cell