Edmund K. Banghart

Person

Rochester, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Non-volatile memory cell arrays with a sectioned active region and...
- Patent number 11,538,815
- Issue date Dec 27, 2022
- GLOBALFOUNDRIES U.S. INC.
- Oscar D. Restrepo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral heterojunction bipolar transistors with asymmetric junctions
- Patent number 11,094,805
- Issue date Aug 17, 2021
- GLOBALFOUNDRIES U.S. INC.
- Alexander Derrickson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective shallow trench isolation (STI) fill for stress engineerin...
- Patent number 10,522,679
- Issue date Dec 31, 2019
- GLOBALFOUNDRIES Inc.
- Ashish Kumar Jha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin structures and multi-Vt scheme based on tapered fin and method...
- Patent number 10,347,740
- Issue date Jul 9, 2019
- GLOBALFOUNDRIES Inc.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure(s) with extended source/drain channel inter...
- Patent number 9,679,990
- Issue date Jun 13, 2017
- GLOBALFOUNDRIES Inc.
- Edmund Kenneth Banghart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin structures and multi-Vt scheme based on tapered fin and method...
- Patent number 9,583,625
- Issue date Feb 28, 2017
- GLOBALFOUNDRIES Inc.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrates and methods for processing semiconductor s...
- Patent number 9,570,291
- Issue date Feb 14, 2017
- GLOBALFOUNDRIES, INC.
- Shishir Ray
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating fin-type field effect transistor with punch-through sto...
- Patent number 9,087,860
- Issue date Jul 21, 2015
- GLOBALFOUNDRIES INC.
- Edmund Kenneth Banghart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral overflow drain and channel stop regions in image sensors
- Patent number 8,994,139
- Issue date Mar 31, 2015
- Semiconductor Components Industries, LLC
- Edmund K. Banghart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral overflow drain and channel stop regions in image sensors
- Patent number 8,772,891
- Issue date Jul 8, 2014
- Truesense Imaging, Inc.
- Edmund K. Banghart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming lateral overflow drain and channel stop regions i...
- Patent number 8,329,499
- Issue date Dec 11, 2012
- Truesense Imaging, Inc.
- Edmund K. Banghart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral overflow drain, anti-blooming structure for CCD devices hav...
- Patent number 6,624,453
- Issue date Sep 23, 2003
- Eastman Kodak Company
- Edmund K. Banghart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compact isolation and antiblooming structure for full-frame CCD ima...
- Patent number 5,804,465
- Issue date Sep 8, 1998
- Eastman Kodak Company
- Edmund K. Banghart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compact isolation and antiblooming structure for full-frame CCD ima...
- Patent number 5,714,776
- Issue date Feb 3, 1998
- Eastman Kodak Company
- Edmund K. Banghart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge-coupled device having an improved charge-transfer efficiency...
- Patent number 5,448,089
- Issue date Sep 5, 1995
- Eastman Kodak Company
- Edmund K. Banghart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for making backside illuminated image sensors
- Patent number 5,227,313
- Issue date Jul 13, 1993
- Eastman Kodak Company
- Ronald M. Gluck
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NON-VOLATILE MEMORY CELL ARRAYS WITH A SECTIONED ACTIVE REGION
- Publication number 20220028873
- Publication date Jan 27, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Oscar D. Restrepo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL HETEROJUNCTION BIPOLAR TRANSISTORS WITH ASYMMETRIC JUNCTIONS
- Publication number 20210226044
- Publication date Jul 22, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Alexander Derrickson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN STRUCTURES OF FINFET DEVICES
- Publication number 20210091222
- Publication date Mar 25, 2021
- GLOBALFOUNDRIES U.S. Inc.
- TAO CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE SHALLOW TRENCH ISOLATION (STI) FILL FOR STRESS ENGINEERIN...
- Publication number 20190131452
- Publication date May 2, 2019
- GLOBALFOUNDRIES INC.
- Ashish Kumar JHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE(S) WITH EXTENDED SOURCE/DRAIN CHANNEL INTER...
- Publication number 20170222054
- Publication date Aug 3, 2017
- GLOBALFOUNDRIES INC.
- Edmund Kenneth BANGHART
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN STRUCTURES AND MULTI-VT SCHEME BASED ON TAPERED FIN AND METHOD...
- Publication number 20170084718
- Publication date Mar 23, 2017
- GLOBALFOUNDRIES INC.
- Xusheng WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATES AND METHODS FOR PROCESSING SEMICONDUCTOR S...
- Publication number 20170018426
- Publication date Jan 19, 2017
- GLOBALFOUNDRIES, Inc.
- Shishir Ray
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN STRUCTURES AND MULTI-VT SCHEME BASED ON TAPERED FIN AND METHOD...
- Publication number 20160118500
- Publication date Apr 28, 2016
- GLOBALFOUNDRIES, Inc.
- Xusheng WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE(S) WITH EXTENDED SOURCE/DRAIN CHANNEL INTER...
- Publication number 20160043190
- Publication date Feb 11, 2016
- GLOBALFOUNDRIES INC.
- Edmund Kenneth BANGHART
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL OVERFLOW DRAIN AND CHANNEL STOP REGIONS IN IMAGE SENSORS
- Publication number 20120168892
- Publication date Jul 5, 2012
- Edmund K. Banghart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL OVERFLOW DRAIN AND CHANNEL STOP REGIONS IN IMAGE SENSORS
- Publication number 20100140728
- Publication date Jun 10, 2010
- Edmund K. Banghart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL OVERFLOW DRAIN AND CHANNEL STOP REGIONS IN IMAGE SENSORS
- Publication number 20100140729
- Publication date Jun 10, 2010
- Edmund K. Banghart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral overflow drain, anti-blooming structure for CCD devices hav...
- Publication number 20030042510
- Publication date Mar 6, 2003
- Eastman Kodak Company
- Edmund K. Banghart
- H01 - BASIC ELECTRIC ELEMENTS

Edmund K. Banghart

Person

Patents Grantslast 30 patents

Non-volatile memory cell arrays with a sectioned active region and...

Lateral heterojunction bipolar transistors with asymmetric junctions

Selective shallow trench isolation (STI) fill for stress engineerin...

Fin structures and multi-Vt scheme based on tapered fin and method...

Semiconductor structure(s) with extended source/drain channel inter...

Fin structures and multi-Vt scheme based on tapered fin and method...

Semiconductor substrates and methods for processing semiconductor s...

Fabricating fin-type field effect transistor with punch-through sto...

Lateral overflow drain and channel stop regions in image sensors

Lateral overflow drain and channel stop regions in image sensors

Method of forming lateral overflow drain and channel stop regions i...

Lateral overflow drain, anti-blooming structure for CCD devices hav...

Compact isolation and antiblooming structure for full-frame CCD ima...

Compact isolation and antiblooming structure for full-frame CCD ima...

Charge-coupled device having an improved charge-transfer efficiency...

Process for making backside illuminated image sensors

Patents Applicationslast 30 patents

NON-VOLATILE MEMORY CELL ARRAYS WITH A SECTIONED ACTIVE REGION

LATERAL HETEROJUNCTION BIPOLAR TRANSISTORS WITH ASYMMETRIC JUNCTIONS

FIN STRUCTURES OF FINFET DEVICES

SELECTIVE SHALLOW TRENCH ISOLATION (STI) FILL FOR STRESS ENGINEERIN...

SEMICONDUCTOR STRUCTURE(S) WITH EXTENDED SOURCE/DRAIN CHANNEL INTER...

FIN STRUCTURES AND MULTI-VT SCHEME BASED ON TAPERED FIN AND METHOD...

SEMICONDUCTOR SUBSTRATES AND METHODS FOR PROCESSING SEMICONDUCTOR S...

FIN STRUCTURES AND MULTI-VT SCHEME BASED ON TAPERED FIN AND METHOD...

SEMICONDUCTOR STRUCTURE(S) WITH EXTENDED SOURCE/DRAIN CHANNEL INTER...

LATERAL OVERFLOW DRAIN AND CHANNEL STOP REGIONS IN IMAGE SENSORS

LATERAL OVERFLOW DRAIN AND CHANNEL STOP REGIONS IN IMAGE SENSORS

LATERAL OVERFLOW DRAIN AND CHANNEL STOP REGIONS IN IMAGE SENSORS

Lateral overflow drain, anti-blooming structure for CCD devices hav...