Effiong Ibok

Person

Sunnyvale, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of atmospheric discharge energy conversion, storage and dist...
- Patent number 8,045,314
- Issue date Oct 25, 2011
- The Travis Business Group, Inc.
- Effiong Etukudo Ibok
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Methods for the deposition of high-K films and high-K films produce...
- Patent number 6,800,568
- Issue date Oct 5, 2004
- Advanced Micro Devices, Inc.
- Effiong Ibok
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Stacked polysilicon layer for boron penetration inhibition
- Patent number 6,762,454
- Issue date Jul 13, 2004
- Advanced Micro Devices, Inc.
- Effiong Ibok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density dual bit flash memory cell with non planar structure
- Patent number 6,735,123
- Issue date May 11, 2004
- Advanced Micro Devices, Inc.
- Nicholas H. Tripsas
- G11 - INFORMATION STORAGE
Information Patent Grant
Interfacial barrier layer in semiconductor devices with high-K gate...
- Patent number 6,693,004
- Issue date Feb 17, 2004
- Advanced Micro Devices, Inc.
- Arvind Halliyal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bi-layer floating gate for improved work function between floating...
- Patent number 6,630,383
- Issue date Oct 7, 2003
- Advanced Micro Devices, Inc.
- Effiong Ibok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation formation with ion implantation
- Patent number 6,599,810
- Issue date Jul 29, 2003
- Advanced Micro Devices, Inc.
- Nick Kepler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for establishing component isolation regions in SOI semicond...
- Patent number 6,593,637
- Issue date Jul 15, 2003
- Advanced Micro Devices, Inc.
- Effiong Ibok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS transistor processing utilizing UV-nitride removable spacer and...
- Patent number 6,472,283
- Issue date Oct 29, 2002
- Advanced Micro Devices, Inc.
- Emi Ishida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET test structure for capacitance-voltage measurements
- Patent number 6,472,233
- Issue date Oct 29, 2002
- Advanced Micro Devices, Inc.
- Khaled Z. Ahmed
- G01 - MEASURING TESTING
Information Patent Grant
Non-reducing process for deposition of polysilicon gate electrode o...
- Patent number 6,451,641
- Issue date Sep 17, 2002
- Advanced Micro Devices, Inc.
- Arvind Halliyal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for establishing ultra-thin gate insulator using anneal in a...
- Patent number 6,444,555
- Issue date Sep 3, 2002
- Advanced Micro Devices, Inc.
- Effiong Ibok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Removable spacer technology using ion implantation to augment etch...
- Patent number 6,429,083
- Issue date Aug 6, 2002
- Advanced Micro Devices, Inc.
- Emi Ishida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating high permitivity dielectric stacks having lo...
- Patent number 6,417,041
- Issue date Jul 9, 2002
- Advanced Micro Devices, Inc.
- Effiong Ibok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for establishing ultra-thin gate insulator having annealed o...
- Patent number 6,399,519
- Issue date Jun 4, 2002
- Advanced Micro Devices, Inc.
- Effiong Ibok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spacer-assisted ultranarrow shallow trench isolation formation
- Patent number 6,391,784
- Issue date May 21, 2002
- Advanced Micro Devices, Inc.
- Effiong E. Ibok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation formation with two source/drain masks and...
- Patent number 6,380,047
- Issue date Apr 30, 2002
- Advanced Micro Devices, Inc.
- Basab Bandyopadhyay
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Indium retrograde channel doping for improved gate oxide reliability
- Patent number 6,372,582
- Issue date Apr 16, 2002
- Advanced Micro Devices, Inc.
- Richard P. Rouse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Removable spacer technology using ion implantation for forming asym...
- Patent number 6,344,396
- Issue date Feb 5, 2002
- Advanced Micro Devices, Inc.
- Emi Ishida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS-type transistor processing utilizing UV-nitride removable space...
- Patent number 6,342,423
- Issue date Jan 29, 2002
- Advanced Micro Devices, Inc.
- Emi Ishida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned damascene gate formation with low gate resistance
- Patent number 6,329,256
- Issue date Dec 11, 2001
- Advanced Micro Devices, Inc.
- Effiong Ibok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating stacked N-O-N ultrathin gate dielectric struc...
- Patent number 6,319,857
- Issue date Nov 20, 2001
- Advanced Micro Devices, Inc.
- Effiong E. Ibok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stepper alignment mark structure for maintaining alignment integrity
- Patent number 6,239,031
- Issue date May 29, 2001
- Advanced Micro Devices, Inc.
- Nick Kepler
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Method for establishing component isolation regions in SOI semicond...
- Patent number 6,235,607
- Issue date May 22, 2001
- Advanced Micro Devices, Inc.
- Effiong Ibok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graded anti-reflective barrier films for ultra-fine lithography
- Patent number 6,235,456
- Issue date May 22, 2001
- Advanced Micros Devices, Inc.
- Effiong E. Ibok
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Methodology for achieving dual gate oxide thicknesses
- Patent number 6,232,244
- Issue date May 15, 2001
- Advanced Micro Devices, Inc.
- Effiong E. Ibok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-uniform gate doping for reduced overlap capacitance
- Patent number 6,229,198
- Issue date May 8, 2001
- Advanced Micro Devices, Inc.
- Effiong Ibok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methodology for achieving dual field oxide thicknesses
- Patent number 6,228,746
- Issue date May 8, 2001
- Advanced Micro Devices, Inc.
- Effiong E. Ibok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned damascene gate with contact formation
- Patent number 6,225,170
- Issue date May 1, 2001
- Advanced Micro Devices, Inc.
- Effiong Ibok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for establishing ultra-thin gate insulator using oxidized ni...
- Patent number 6,207,542
- Issue date Mar 27, 2001
- Advanced Micro Devices, Inc.
- Effiong Ibok
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MODULAR, PORTABLE AND TRANSPORTABLE ENERGY STORAGE SYSTEMS AND APPL...
- Publication number 20130244064
- Publication date Sep 19, 2013
- EFFIONG ETUKUDO IBOK
- B60 - VEHICLES IN GENERAL
Information Patent Application
METHOD OF ATMOSPHERIC DISCHARGE ENERGY CONVERSION, STORAGE AND DIST...
- Publication number 20100220424
- Publication date Sep 2, 2010
- THE TRAVIS BUSINESS GROUP, INC
- EFFIONG ETUKUDO IBOK
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Application
Method of wireless medical database creation and retrieval
- Publication number 20020116219
- Publication date Aug 22, 2002
- Effiong Ibok
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHOD FOR ESTABLISHING ULTRA-THIN GATE INSULATOR USING ANNEAL IN A...
- Publication number 20010049186
- Publication date Dec 6, 2001
- EFFIONG IBOK
- H01 - BASIC ELECTRIC ELEMENTS

Effiong Ibok

Person

Patents Grantslast 30 patents

Method of atmospheric discharge energy conversion, storage and dist...

Methods for the deposition of high-K films and high-K films produce...

Stacked polysilicon layer for boron penetration inhibition

High density dual bit flash memory cell with non planar structure

Interfacial barrier layer in semiconductor devices with high-K gate...

Bi-layer floating gate for improved work function between floating...

Shallow trench isolation formation with ion implantation

Method for establishing component isolation regions in SOI semicond...

MOS transistor processing utilizing UV-nitride removable spacer and...

MOSFET test structure for capacitance-voltage measurements

Non-reducing process for deposition of polysilicon gate electrode o...

Method for establishing ultra-thin gate insulator using anneal in a...

Removable spacer technology using ion implantation to augment etch...

Method for fabricating high permitivity dielectric stacks having lo...

Method for establishing ultra-thin gate insulator having annealed o...

Spacer-assisted ultranarrow shallow trench isolation formation

Shallow trench isolation formation with two source/drain masks and...

Indium retrograde channel doping for improved gate oxide reliability

Removable spacer technology using ion implantation for forming asym...

MOS-type transistor processing utilizing UV-nitride removable space...

Self-aligned damascene gate formation with low gate resistance

Method of fabricating stacked N-O-N ultrathin gate dielectric struc...

Stepper alignment mark structure for maintaining alignment integrity

Method for establishing component isolation regions in SOI semicond...

Graded anti-reflective barrier films for ultra-fine lithography

Methodology for achieving dual gate oxide thicknesses

Non-uniform gate doping for reduced overlap capacitance

Methodology for achieving dual field oxide thicknesses

Self-aligned damascene gate with contact formation

Method for establishing ultra-thin gate insulator using oxidized ni...

Patents Applicationslast 30 patents

MODULAR, PORTABLE AND TRANSPORTABLE ENERGY STORAGE SYSTEMS AND APPL...

METHOD OF ATMOSPHERIC DISCHARGE ENERGY CONVERSION, STORAGE AND DIST...

Method of wireless medical database creation and retrieval

METHOD FOR ESTABLISHING ULTRA-THIN GATE INSULATOR USING ANNEAL IN A...