Emil Arnold

Person

Tarrytown, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Passivated silicon carbide devices with low leakage current and met...
- Patent number 6,703,276
- Issue date Mar 9, 2004
- Koninklijke Philips Electronics N.V.
- Dev Alok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improving inversion layer mobility in a silicon carbide...
- Patent number 6,559,068
- Issue date May 6, 2003
- Koninklijke Philips Electronics N.V.
- Dev Alok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivated silicon carbide devices with low leakage current and met...
- Patent number 6,373,076
- Issue date Apr 16, 2002
- Philips Electronics North America Corporation
- Dev Alok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage thin film transistor with improved on-state characteri...
- Patent number 6,310,378
- Issue date Oct 30, 2001
- Philips Electronics North American Corporation
- Theodore Letavic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral silicon carbide semiconductor device having a drift region...
- Patent number 6,011,278
- Issue date Jan 4, 2000
- Philips Electronics North America Corporation
- Dev Alok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage thin film transistor having a linear doping profile
- Patent number 5,767,547
- Issue date Jun 16, 1998
- U.S. Philips Corporation
- Steven L. Merchant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage thin film transistor having a linear doping profile an...
- Patent number 5,300,448
- Issue date Apr 5, 1994
- North American Philips Corporation
- Steven L. Merchant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for making strain-compensated bonded silicon-on-insulator m...
- Patent number 5,261,999
- Issue date Nov 16, 1993
- North American Philips Corporation
- Ronald D. Pinker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for making thin film silicon-on-insulator wafers employing...
- Patent number 5,213,986
- Issue date May 25, 1993
- North American Philips Corporation
- Ronald D. Pinker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device particularly adapted for high voltage app...
- Patent number 5,113,236
- Issue date May 12, 1992
- North American Philips Corporation
- Emil Arnold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a high resistance layer having a low temper...
- Patent number 4,575,923
- Issue date Mar 18, 1986
- North American Philips Corporation
- Emil Arnold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing single crystal layers on insulators
- Patent number 4,555,300
- Issue date Nov 26, 1985
- North American Philips Corporation
- Emil Arnold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Signal detector comprising field effect transistors
- Patent number 3,973,146
- Issue date Aug 3, 1976
- North American Philips Corporation
- Emil Arnold
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method for improving inversion layer mobility in a silicon carbide...
- Publication number 20030008442
- Publication date Jan 9, 2003
- Koninklijke Philips Electronics N.V.
- Dev Alok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Passivated silicon carbide devices with low leakage current and met...
- Publication number 20020121641
- Publication date Sep 5, 2002
- PHILIPS ELECTRONICS NORTH AMERICA CORPORATION
- Dev Alok
- H01 - BASIC ELECTRIC ELEMENTS

Emil Arnold

Person

Patents Grantslast 30 patents

Passivated silicon carbide devices with low leakage current and met...

Method for improving inversion layer mobility in a silicon carbide...

Passivated silicon carbide devices with low leakage current and met...

High voltage thin film transistor with improved on-state characteri...

Lateral silicon carbide semiconductor device having a drift region...

High voltage thin film transistor having a linear doping profile

High voltage thin film transistor having a linear doping profile an...

Process for making strain-compensated bonded silicon-on-insulator m...

Process for making thin film silicon-on-insulator wafers employing...

Integrated circuit device particularly adapted for high voltage app...

Method of manufacturing a high resistance layer having a low temper...

Method for producing single crystal layers on insulators

Signal detector comprising field effect transistors

Patents Applicationslast 30 patents

Method for improving inversion layer mobility in a silicon carbide...

Passivated silicon carbide devices with low leakage current and met...