Emmerich Bertagnolli

Person

Muenchen, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Memory cell using amorphous material to stabilize the boundary face...
- Patent number 6,583,464
- Issue date Jun 24, 2003
- Infineon Technologies AG
- Emmerich Bertagnolli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit having at least two vertical MOS transistors and...
- Patent number 6,566,202
- Issue date May 20, 2003
- Siemens Aktiengesellschaft
- Bernd Goebel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a stacked capacitor in a semiconductor confi...
- Patent number 6,403,440
- Issue date Jun 11, 2002
- Infineon Technologies AG
- Emmerich Bertagnolli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit having at least two vertical MOS transistors and...
- Patent number 6,376,313
- Issue date Apr 23, 2002
- Siemens Aktiengesellschaft
- Bernd Goebel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming DRAM cell arrangement
- Patent number 6,352,894
- Issue date Mar 5, 2002
- Siemens Aktiengesellschaft
- Bernd Goebel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SRAM cell arrangement and method for manufacturing same
- Patent number 6,309,930
- Issue date Oct 30, 2001
- Siemens Aktiengesellschaft
- Bernd Goebel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SRAM cell arrangement and method for manufacturing same
- Patent number 6,222,753
- Issue date Apr 24, 2001
- Siemens Aktiengesellschaft
- Bernd Goebel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Read-only memory cell device and method for its production
- Patent number 6,211,019
- Issue date Apr 3, 2001
- Infineon Technologies AG
- Helmut Klose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DRAM cell arrangement and method for the manufacture thereof
- Patent number 6,172,391
- Issue date Jan 9, 2001
- Siemens Aktiengesellschaft
- Bernd Goebel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrically programmable memory cell configuration
- Patent number 6,118,159
- Issue date Sep 12, 2000
- Siemens Aktiengesellschaft
- Josef Willer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DRAM cell arrangement
- Patent number 6,097,049
- Issue date Aug 1, 2000
- Siemens Aktiengesellschaft
- Bernd Goebel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DRAM cell configuration and method for its fabrication
- Patent number 6,087,692
- Issue date Jul 11, 2000
- Siemens Aktiengesellschaft
- Bernd Gobel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DRAM cell arrangement and method for its fabrication
- Patent number 6,075,265
- Issue date Jun 13, 2000
- Siemens Aktiengesellschaft
- Bernd Goebel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DRAM cell arrangement and method for its production
- Patent number 6,044,009
- Issue date Mar 28, 2000
- Siemens Aktiengesellschaft
- Bernd Goebel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component for vertical integration and manufacturing...
- Patent number 5,930,596
- Issue date Jul 27, 1999
- Siemens Aktiengesellschaft
- Helmut Klose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS transistor for biotechnical applications
- Patent number 5,801,428
- Issue date Sep 1, 1998
- Siemens Aktiengesellschaft
- Andreas Vom Felde
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Process for producing semiconductor components between which contac...
- Patent number 5,767,001
- Issue date Jun 16, 1998
- Siemens Aktiengesellschaft
- Emmerich Bertagnolli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for the production of a three-dimensional circuit arrangement
- Patent number 5,741,733
- Issue date Apr 21, 1998
- Siemens Aktiengesellschaft
- Emmerich Bertagnolli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Corrosion protection for micromechanical metal layers
- Patent number 5,698,112
- Issue date Dec 16, 1997
- Siemens Aktiengesellschaft
- Ulrich Naeher
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Method for manufacturing tunnel-effect sensors
- Patent number 5,472,916
- Issue date Dec 5, 1995
- Siemens Aktiengesellschaft
- Emmerich Bertagnolli
- G01 - MEASURING TESTING
Information Patent Grant
Method for manufacturing lateral bipolar transistors
- Patent number 5,460,982
- Issue date Oct 24, 1995
- Siemens Aktiengesellschaft
- Emmerich Bertagnolli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing lateral bipolar transistors
- Patent number 5,407,843
- Issue date Apr 18, 1995
- Siemens Aktiengesellschaft
- Emmerich Bertagnolli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing lateral bipolar transistors
- Patent number 5,395,775
- Issue date Mar 7, 1995
- Siemens Aktiengesellschaft
- Emmerich Bertagnolli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a bipolar transistor in a substrate
- Patent number 5,358,882
- Issue date Oct 25, 1994
- Siemens Aktiengesellschaft
- Emmerich Bertagnolli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a bipolar transistor
- Patent number 5,217,909
- Issue date Jun 8, 1993
- Siemens Aktiengesellschaft
- Emmerich Bertagnolli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a polycrystalline layer on a substrate
- Patent number 5,213,670
- Issue date May 25, 1993
- Siemens Aktiengesellschaft
- Emmerich Bertagnolli
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Circuit structure having a lateral bipolar transistor and its metho...
- Patent number 5,047,823
- Issue date Sep 10, 1991
- Siemens Aktiengesellschaft
- Ludwig Treitinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor structure for very high speed circuits and metho...
- Patent number 4,889,823
- Issue date Dec 26, 1989
- Siemens Aktiengesellschaft
- Emmerich Bertagnolli
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Integrated circuit having at least two vertical MOS transistors and...
- Publication number 20020094628
- Publication date Jul 18, 2002
- Bernd Goebel
- H01 - BASIC ELECTRIC ELEMENTS

Emmerich Bertagnolli

Person

Patents Grantslast 30 patents

Memory cell using amorphous material to stabilize the boundary face...

Integrated circuit having at least two vertical MOS transistors and...

Method for fabricating a stacked capacitor in a semiconductor confi...

Integrated circuit having at least two vertical MOS transistors and...

Method of forming DRAM cell arrangement

SRAM cell arrangement and method for manufacturing same

SRAM cell arrangement and method for manufacturing same

Read-only memory cell device and method for its production

DRAM cell arrangement and method for the manufacture thereof

Electrically programmable memory cell configuration

DRAM cell arrangement

DRAM cell configuration and method for its fabrication

DRAM cell arrangement and method for its fabrication

DRAM cell arrangement and method for its production

Semiconductor component for vertical integration and manufacturing...

MOS transistor for biotechnical applications

Process for producing semiconductor components between which contac...

Method for the production of a three-dimensional circuit arrangement

Corrosion protection for micromechanical metal layers

Method for manufacturing tunnel-effect sensors

Method for manufacturing lateral bipolar transistors

Method for manufacturing lateral bipolar transistors

Method for manufacturing lateral bipolar transistors

Method for manufacturing a bipolar transistor in a substrate

Method for manufacturing a bipolar transistor

Method for manufacturing a polycrystalline layer on a substrate

Circuit structure having a lateral bipolar transistor and its metho...

Bipolar transistor structure for very high speed circuits and metho...

Patents Applicationslast 30 patents

Integrated circuit having at least two vertical MOS transistors and...