Eric C. T. Harley

Person

LaGrangeville, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
FinFET with dielectric isolation after gate module for improved sou...
- Patent number 11,081,583
- Issue date Aug 3, 2021
- International Business Machines Corporation
- Eric C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with dielectric isolation after gate module for improved sou...
- Patent number 10,615,279
- Issue date Apr 7, 2020
- International Business Machines Corporation
- Eric C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with dielectric isolation after gate module for improved sou...
- Patent number 10,243,077
- Issue date Mar 26, 2019
- International Business Machines Corporation
- Eric C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with dielectric isolation after gate module for improved sou...
- Patent number 9,917,190
- Issue date Mar 13, 2018
- International Business Machines Corporation
- Eric C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-limiting selective epitaxy process for preventing merger of se...
- Patent number 9,752,251
- Issue date Sep 5, 2017
- International Business Machines Corporation
- Kevin K. Chan
- C30 - CRYSTAL GROWTH
Information Patent Grant
Conformal buffer layer in source and drain regions of fin-type tran...
- Patent number 9,634,084
- Issue date Apr 25, 2017
- GLOBALFOUNDRIES Inc.
- Christopher D. Sheraw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diamond shaped source drain epitaxy with underlying buffer layer
- Patent number 9,577,099
- Issue date Feb 21, 2017
- GLOBALFOUNDRIES Inc.
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET and nanowire semiconductor devices with suspended channel re...
- Patent number 9,577,100
- Issue date Feb 21, 2017
- GLOBALFOUNDRIES Inc.
- Kangguo Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Epitaxial growth of material on source/drain regions of FinFET stru...
- Patent number 9,536,985
- Issue date Jan 3, 2017
- GLOBALFOUNDRIES Inc.
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Uniform junction formation in FinFETs
- Patent number 9,466,616
- Issue date Oct 11, 2016
- GLOBALFOUNDRIES Inc.
- Eric C. T. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for embedded diamond-shaped stress element
- Patent number 9,412,843
- Issue date Aug 9, 2016
- International Business Machines Corporation
- Eric C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of inspecting a semiconductor substrate
- Patent number 9,390,884
- Issue date Jul 12, 2016
- GLOBALFOUNDRIES Inc.
- Eric C. Harley
- G01 - MEASURING TESTING
Information Patent Grant
Uniform junction formation in FinFETs
- Patent number 9,318,608
- Issue date Apr 19, 2016
- GLOBALFOUNDRIES Inc.
- Eric C. T. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
finFET with dielectric isolation after gate module for improved sou...
- Patent number 9,312,364
- Issue date Apr 12, 2016
- International Business Machines Corporation
- Eric C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxially grown silicon germanium channel FinFET with silicon und...
- Patent number 9,287,264
- Issue date Mar 15, 2016
- GLOBALFOUNDRIES Inc.
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FINFET structures with fins recessed beneath the gate
- Patent number 9,246,003
- Issue date Jan 26, 2016
- GLOBALFOUNDRIES Inc.
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graphene transistor with a sublithographic channel width
- Patent number 9,236,477
- Issue date Jan 12, 2016
- GLOBALFOUNDRIES Inc.
- Jack O. Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partial FIN on oxide for improved electrical isolation of raised ac...
- Patent number 9,219,114
- Issue date Dec 22, 2015
- GLOBALFOUNDRIES Inc.
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single crystal source-drain merged by polycrystalline material
- Patent number 9,123,826
- Issue date Sep 1, 2015
- International Business Machines Corporation
- Eric C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multigate finFETs with epitaxially-grown merged source/drains
- Patent number 8,987,093
- Issue date Mar 24, 2015
- International Business Machines Corporation
- Eric C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Measurement of CMOS device channel strain by X-ray diffraction
- Patent number 8,716,037
- Issue date May 6, 2014
- International Business Machines Corporation
- Thomas N. Adam
- G01 - MEASURING TESTING
Information Patent Grant
Field effect transistor device
- Patent number 8,618,617
- Issue date Dec 31, 2013
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor device
- Patent number 8,492,234
- Issue date Jul 23, 2013
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stressed transistor with improved metastability
- Patent number 8,361,859
- Issue date Jan 29, 2013
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of integrating reverse eSiGe on NFET and SiGe channel on PF...
- Patent number 8,232,186
- Issue date Jul 31, 2012
- International Business Machines Corporation
- Eric C. T. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming source and drain of a field-effect-transistor and...
- Patent number 8,084,788
- Issue date Dec 27, 2011
- International Business Machines Corporation
- Judson Robert Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating semiconductor structures
- Patent number 8,080,451
- Issue date Dec 20, 2011
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor fabrication process including an SiGe rework method
- Patent number 7,955,936
- Issue date Jun 7, 2011
- Chartered Semiconductor Manufacturing Ltd.
- Yong Siang Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Measuring strain of epitaxial films using micro x-ray diffraction f...
- Patent number 7,769,134
- Issue date Aug 3, 2010
- International Business Machines Corporation
- Thomas N. Adam
- G01 - MEASURING TESTING
Information Patent Grant
Method for fabricating a semiconductor structures and structures th...
- Patent number 7,687,804
- Issue date Mar 30, 2010
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...
- Publication number 20200066908
- Publication date Feb 27, 2020
- International Business Machines Corporation
- ERIC C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...
- Publication number 20180097113
- Publication date Apr 5, 2018
- International Business Machines Corporation
- ERIC C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIAMOND SHAPED SOURCE DRAIN EPITAXY WITH UNDERLYING BUFFER LAYER
- Publication number 20160268413
- Publication date Sep 15, 2016
- GLOBALFOUNDRIES INC.
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...
- Publication number 20160197186
- Publication date Jul 7, 2016
- International Business Machines Corporation
- ERIC C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIFORM JUNCTION FORMATION IN FINFETS
- Publication number 20160181285
- Publication date Jun 23, 2016
- GLOBALFOUNDRIES INC.
- Eric C.T. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIALLY GROWN SILICON GERMANIUM CHANNEL FINFET WITH SILICON UND...
- Publication number 20160163707
- Publication date Jun 9, 2016
- GLOBALFOUNDRIES INC.
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIFORM JUNCTION FORMATION IN FINFETS
- Publication number 20160093740
- Publication date Mar 31, 2016
- International Business Machines Corporation
- Eric C. T. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL GROWTH OF MATERIAL ON SOURCE/DRAIN REGIONS OF FINFET STRU...
- Publication number 20160093720
- Publication date Mar 31, 2016
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIAL FIN ON OXIDE FOR IMPROVED ELECTRICAL ISOLATION OF RAISED AC...
- Publication number 20160079397
- Publication date Mar 17, 2016
- GLOBALFOUNDRIES INC.
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...
- Publication number 20160035878
- Publication date Feb 4, 2016
- International Business Machines Corporation
- ERIC C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET AND NANOWIRE SEMICONDUCTOR DEVICES WITH SUSPENDED CHANNEL RE...
- Publication number 20150364603
- Publication date Dec 17, 2015
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...
- Publication number 20150349093
- Publication date Dec 3, 2015
- International Business Machines Corporation
- ERIC C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR EMBEDDED DIAMOND-SHAPED STRESS ELEMENT
- Publication number 20150340465
- Publication date Nov 26, 2015
- International Business Machines Corporation
- Eric C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR INSPECTION SYSTEM INCLUDING REFERENCE IMAGE GENERATOR
- Publication number 20150325406
- Publication date Nov 12, 2015
- International Business Machines Corporation
- Eric C. Harley
- G01 - MEASURING TESTING
Information Patent Application
SINGLE-CRYSTAL SOURCE-DRAIN MERGED BY POLYCRYSTALLINE MATERIAL
- Publication number 20150270332
- Publication date Sep 24, 2015
- International Business Machines Corporation
- Eric C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRAPHENE TRANSISTOR WITH A SUBLITHOGRAPHIC CHANNEL WIDTH
- Publication number 20150236147
- Publication date Aug 20, 2015
- International Business Machines Corporation
- Jack O. Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET STRUCTURES WITH FINS RECESSED BENEATH THE GATE
- Publication number 20150137193
- Publication date May 21, 2015
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Partial FIN On Oxide For Improved Electrical Isolation Of Raised Ac...
- Publication number 20150014773
- Publication date Jan 15, 2015
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-LIMITING SELECTIVE EPITAXY PROCESS FOR PREVENTING MERGER OF SE...
- Publication number 20140308782
- Publication date Oct 16, 2014
- International Business Machines Corporation
- Kevin K. Chan
- C30 - CRYSTAL GROWTH
Information Patent Application
MEASUREMENT OF CMOS DEVICE CHANNEL STRAIN BY X-RAY DIFFRACTION
- Publication number 20140159161
- Publication date Jun 12, 2014
- International Business Machines Corporation
- Thomas N. Adam
- G01 - MEASURING TESTING
Information Patent Application
Multigate FinFETs with Epitaxially-Grown Merged Source/Drains
- Publication number 20140080275
- Publication date Mar 20, 2014
- International Business Machines Corporation
- Eric C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR DEVICE
- Publication number 20130175547
- Publication date Jul 11, 2013
- GLOBALFOUNDRIES, INC.
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESSED TRANSISTOR WITH IMPROVED METASTABILITY
- Publication number 20130134444
- Publication date May 30, 2013
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF INTEGRATING REVERSE eSiGe ON NFET AND SiGe CHANNEL ON PF...
- Publication number 20120228716
- Publication date Sep 13, 2012
- International Business Machines Corporation
- Eric C. T. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANNEALING TECHNIQUES FOR HIGH PERFORMANCE COMPLEMENTARY METAL OXIDE...
- Publication number 20120190216
- Publication date Jul 26, 2012
- International Business Machines Corporation
- Kevin K. Chan
- B82 - NANO-TECHNOLOGY
Information Patent Application
MEASUREMENT OF CMOS DEVICE CHANNEL STRAIN BY X-RAY DIFFRACTION
- Publication number 20120146050
- Publication date Jun 14, 2012
- International Business Machines Corporation
- THOMAS N. ADAM
- G01 - MEASURING TESTING
Information Patent Application
STRESSED TRANSISTOR WITH IMPROVED METASTABILITY
- Publication number 20120112208
- Publication date May 10, 2012
- International Business Machines Corporation
- THOMAS N. ADAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Effect Transistor Device
- Publication number 20110316046
- Publication date Dec 29, 2011
- GLOBALFOUNDRIES INC.
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEASURING STRAIN OF EPITAXIAL FILMS USING MICRO X-RAY DIFFRACTION F...
- Publication number 20100208869
- Publication date Aug 19, 2010
- International Business Machines Corporation
- Thomas N. Adam
- G01 - MEASURING TESTING
Information Patent Application
METHOD FOR FABRICATING SEMICONDUCTOR STRUCTURES
- Publication number 20100112762
- Publication date May 6, 2010
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS

Eric C. T. Harley

Person

Patents Grantslast 30 patents

FinFET with dielectric isolation after gate module for improved sou...

FinFET with dielectric isolation after gate module for improved sou...

FinFET with dielectric isolation after gate module for improved sou...

FinFET with dielectric isolation after gate module for improved sou...

Self-limiting selective epitaxy process for preventing merger of se...

Conformal buffer layer in source and drain regions of fin-type tran...

Diamond shaped source drain epitaxy with underlying buffer layer

FinFET and nanowire semiconductor devices with suspended channel re...

Epitaxial growth of material on source/drain regions of FinFET stru...

Uniform junction formation in FinFETs

Method for embedded diamond-shaped stress element

Method of inspecting a semiconductor substrate

Uniform junction formation in FinFETs

finFET with dielectric isolation after gate module for improved sou...

Epitaxially grown silicon germanium channel FinFET with silicon und...

FINFET structures with fins recessed beneath the gate

Graphene transistor with a sublithographic channel width

Partial FIN on oxide for improved electrical isolation of raised ac...

Single crystal source-drain merged by polycrystalline material

Multigate finFETs with epitaxially-grown merged source/drains

Measurement of CMOS device channel strain by X-ray diffraction

Field effect transistor device

Field effect transistor device

Stressed transistor with improved metastability

Methods of integrating reverse eSiGe on NFET and SiGe channel on PF...

Method of forming source and drain of a field-effect-transistor and...

Fabricating semiconductor structures

Semiconductor fabrication process including an SiGe rework method

Measuring strain of epitaxial films using micro x-ray diffraction f...

Method for fabricating a semiconductor structures and structures th...

Patents Applicationslast 30 patents

FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...

FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...

DIAMOND SHAPED SOURCE DRAIN EPITAXY WITH UNDERLYING BUFFER LAYER

FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...

UNIFORM JUNCTION FORMATION IN FINFETS

EPITAXIALLY GROWN SILICON GERMANIUM CHANNEL FINFET WITH SILICON UND...

UNIFORM JUNCTION FORMATION IN FINFETS

EPITAXIAL GROWTH OF MATERIAL ON SOURCE/DRAIN REGIONS OF FINFET STRU...

PARTIAL FIN ON OXIDE FOR IMPROVED ELECTRICAL ISOLATION OF RAISED AC...

FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...

FINFET AND NANOWIRE SEMICONDUCTOR DEVICES WITH SUSPENDED CHANNEL RE...

FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...

METHOD FOR EMBEDDED DIAMOND-SHAPED STRESS ELEMENT

SEMICONDUCTOR INSPECTION SYSTEM INCLUDING REFERENCE IMAGE GENERATOR

SINGLE-CRYSTAL SOURCE-DRAIN MERGED BY POLYCRYSTALLINE MATERIAL

GRAPHENE TRANSISTOR WITH A SUBLITHOGRAPHIC CHANNEL WIDTH

FINFET STRUCTURES WITH FINS RECESSED BENEATH THE GATE

Partial FIN On Oxide For Improved Electrical Isolation Of Raised Ac...

SELF-LIMITING SELECTIVE EPITAXY PROCESS FOR PREVENTING MERGER OF SE...

MEASUREMENT OF CMOS DEVICE CHANNEL STRAIN BY X-RAY DIFFRACTION

Multigate FinFETs with Epitaxially-Grown Merged Source/Drains

FIELD EFFECT TRANSISTOR DEVICE

STRESSED TRANSISTOR WITH IMPROVED METASTABILITY

METHODS OF INTEGRATING REVERSE eSiGe ON NFET AND SiGe CHANNEL ON PF...

ANNEALING TECHNIQUES FOR HIGH PERFORMANCE COMPLEMENTARY METAL OXIDE...

MEASUREMENT OF CMOS DEVICE CHANNEL STRAIN BY X-RAY DIFFRACTION

STRESSED TRANSISTOR WITH IMPROVED METASTABILITY

Field Effect Transistor Device

MEASURING STRAIN OF EPITAXIAL FILMS USING MICRO X-RAY DIFFRACTION F...

METHOD FOR FABRICATING SEMICONDUCTOR STRUCTURES