Feng Yi Huang

Person

Hocienda Hts., CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of forming a SiGe-on-insulator substrate using separation by...
- Patent number 6,743,651
- Issue date Jun 1, 2004
- International Business Machines Corporation
- Jack O. Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with raised extrinsic base fabricated in an inte...
- Patent number 6,667,521
- Issue date Dec 23, 2003
- International Business Machines Corporation
- David C. Ahlgren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor with silicon-germanium base
- Patent number 6,573,539
- Issue date Jun 3, 2003
- International Business Machines Corporation
- Feng-Yi Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with raised extrinsic base fabricated in an inte...
- Patent number 6,492,238
- Issue date Dec 10, 2002
- International Business Machines Corporation
- David C. Ahlgren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming a silicon-germanium base of a heterojunction bi...
- Patent number 6,417,059
- Issue date Jul 9, 2002
- International Business Machines Corporation
- Feng-Yi Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-germanium BiCMOS on SOI
- Patent number 6,288,427
- Issue date Sep 11, 2001
- International Business Machines Corporation
- Feng-Yi Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming a silicon-germanium base of heterojunction bipo...
- Patent number 6,251,738
- Issue date Jun 26, 2001
- International Business Machines Corporation
- Feng-Yi Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-germanium bicmos on soi
- Patent number 6,235,567
- Issue date May 22, 2001
- International Business Machines Corporation
- Feng-Yi Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method of forming a SiGe-on-insulator substrate using separation by...
- Publication number 20030199126
- Publication date Oct 23, 2003
- International Business Machines Corporation
- Jack O. Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar transistor with raised extrinsic base fabricated in an inte...
- Publication number 20030064555
- Publication date Apr 3, 2003
- David C. Ahlgren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR WITH RAISED EXTRINSIC BASE FABRICATED IN AN INTE...
- Publication number 20020197783
- Publication date Dec 26, 2002
- David C. Ahlgren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESSING METHOD FOR FORMING DISLOCATION-FREE SILICON-ON-INSULATOR...
- Publication number 20020089032
- Publication date Jul 11, 2002
- Feng-Yi Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon-germanium base and a heterojunction bipoplar transistor wit...
- Publication number 20020020852
- Publication date Feb 21, 2002
- Feng-Yi Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for forming a silicon-germanium base of a heterojunction bi...
- Publication number 20010026986
- Publication date Oct 4, 2001
- Feng-Yi Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon-germanium BiCMOS on SOI
- Publication number 20010008284
- Publication date Jul 19, 2001
- Feng-Yi Huang
- H01 - BASIC ELECTRIC ELEMENTS

Feng Yi Huang

Person

Patents Grantslast 30 patents

Method of forming a SiGe-on-insulator substrate using separation by...

Bipolar transistor with raised extrinsic base fabricated in an inte...

Heterojunction bipolar transistor with silicon-germanium base

Bipolar transistor with raised extrinsic base fabricated in an inte...

Process for forming a silicon-germanium base of a heterojunction bi...

Silicon-germanium BiCMOS on SOI

Process for forming a silicon-germanium base of heterojunction bipo...

Silicon-germanium bicmos on soi

Patents Applicationslast 30 patents

Method of forming a SiGe-on-insulator substrate using separation by...

Bipolar transistor with raised extrinsic base fabricated in an inte...

BIPOLAR TRANSISTOR WITH RAISED EXTRINSIC BASE FABRICATED IN AN INTE...

PROCESSING METHOD FOR FORMING DISLOCATION-FREE SILICON-ON-INSULATOR...

Silicon-germanium base and a heterojunction bipoplar transistor wit...

Process for forming a silicon-germanium base of a heterojunction bi...

Silicon-germanium BiCMOS on SOI