Feng Yuan

Person

Yonghe City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method
- Patent number 12,237,227
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kai-Qiang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a strained structure and structure formed
- Patent number 11,855,210
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsung-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained channel field effect transistor
- Patent number 11,677,004
- Issue date Jun 13, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Mark Van Dal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strain enhancement for FinFETs
- Patent number 11,626,328
- Issue date Apr 11, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device package and method of manufacturing the same
- Patent number 11,508,658
- Issue date Nov 22, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hau-Yan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with a negative capacitance and a method of creating the...
- Patent number 11,387,360
- Issue date Jul 12, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Feng Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a strained structure and structure formed
- Patent number 11,251,303
- Issue date Feb 15, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsung-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with a negative capacitance and a method of creating the...
- Patent number 11,189,726
- Issue date Nov 30, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Feng Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin structure of fin field effect transistor
- Patent number 11,158,725
- Issue date Oct 26, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Feng Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strain enhancement for FinFETs
- Patent number 11,018,061
- Issue date May 25, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a strained structure and structure formed
- Patent number 10,998,442
- Issue date May 4, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsung-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with a negative capacitance and a method of creating the...
- Patent number 10,707,347
- Issue date Jul 7, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Feng Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a strained structure and structure formed
- Patent number 10,510,887
- Issue date Dec 17, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a fin field effect transistor comprising two etch...
- Patent number 10,355,108
- Issue date Jul 16, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Feng Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strain enhancement for FinFETs
- Patent number 10,290,550
- Issue date May 14, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET having isolation structure and method of forming the same
- Patent number 10,141,429
- Issue date Nov 27, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Chung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a strained region
- Patent number 9,997,616
- Issue date Jun 12, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Feng Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
STI shape near fin bottom of Si fin in bulk FinFET
- Patent number 9,953,885
- Issue date Apr 24, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Feng Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained channel field effect transistor
- Patent number 9,761,666
- Issue date Sep 12, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mark van Dal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFETs with different fin height and EPI height setting
- Patent number 9,721,829
- Issue date Aug 1, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Li Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFETs with different fin heights
- Patent number 9,711,412
- Issue date Jul 18, 2017
- Taiwan Semiconductor Munufacturing Company, Ltd.
- Tsung-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET having isolation structure and method of forming the same
- Patent number 9,653,542
- Issue date May 16, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Chung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Voids in STI regions for forming bulk FinFETs
- Patent number 9,640,441
- Issue date May 2, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Ming Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a strained structure of a semiconductor device
- Patent number 9,577,071
- Issue date Feb 21, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a strained structure and structure formed
- Patent number 9,564,529
- Issue date Feb 7, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin structure of fin field effect transistor
- Patent number 9,484,462
- Issue date Nov 1, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd
- Feng Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFETs with different fin heights
- Patent number 9,425,102
- Issue date Aug 23, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strain enhancement for FinFETs
- Patent number 9,419,134
- Issue date Aug 16, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure for semiconductor device
- Patent number 9,397,097
- Issue date Jul 19, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin Lee Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Voids in STI regions for forming bulk FinFETs
- Patent number 9,385,046
- Issue date Jul 5, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Ming Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20240379659
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kai-Qiang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A STRAINED STRUCTURE AND STRUCTURE FORMED
- Publication number 20240097034
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAVELENGTH TUNING IN SILICON PHOTONICS
- Publication number 20240069275
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Beih-Tzun Lin
- G02 - OPTICS
Information Patent Application
OPTICAL MODULATOR AND METHOD OF FORMING THE SAME
- Publication number 20240045240
- Publication date Feb 8, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- CHIH-TSUNG SHIH
- G02 - OPTICS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20230420452
- Publication date Dec 28, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kai-Qiang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20230317714
- Publication date Oct 5, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kai-Qiang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20230290688
- Publication date Sep 14, 2023
- TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD.
- Kai-Qiang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained Channel Field Effect Transistor
- Publication number 20220352320
- Publication date Nov 3, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- MARK VAN DAL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH A NEGATIVE CAPACITANCE AND A METHOD OF CREATING THE...
- Publication number 20220302315
- Publication date Sep 22, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Feng Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Fabricating a Strained Structure and Structure Formed
- Publication number 20220173245
- Publication date Jun 2, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20210313259
- Publication date Oct 7, 2021
- Taiwan Semiconductor Manufacturing company Ltd.
- HAU-YAN LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strain Enhancement for FinFETs
- Publication number 20210280471
- Publication date Sep 9, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsung-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Fabricating a Strained Structure and Structure Formed
- Publication number 20200365736
- Publication date Nov 19, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH A NEGATIVE CAPACITANCE AND A METHOD OF CREATING THE...
- Publication number 20200273996
- Publication date Aug 27, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Feng Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH A NEGATIVE CAPACITANCE AND A METHOD OF CREATING THE...
- Publication number 20200273997
- Publication date Aug 27, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Feng Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH A NEGATIVE CAPACITANCE AND A METHOD OF CREATING THE...
- Publication number 20200127138
- Publication date Apr 23, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Feng Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Fabricating a Strained Structure and Structure Formed
- Publication number 20200119196
- Publication date Apr 16, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN STRUCTURE OF FIN FIELD EFFECT TRANSISTOR
- Publication number 20190341473
- Publication date Nov 7, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Feng YUAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strain Enhancement for FinFETs
- Publication number 20190267293
- Publication date Aug 29, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained Channel Field Effect Transistor
- Publication number 20170358648
- Publication date Dec 14, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- MARK VAN DAL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET Having Isolation Structure and Method of Forming the Same
- Publication number 20170250267
- Publication date Aug 31, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Chung CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Fabricating a Strained Structure and Structure Formed
- Publication number 20170148917
- Publication date May 25, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN STRUCTURE OF FIN FIELD EFFECT TRANSISTOR
- Publication number 20170117388
- Publication date Apr 27, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Feng YUAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFETs with Different Fin Heights
- Publication number 20160358926
- Publication date Dec 8, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strain Enhancement for FinFETs
- Publication number 20160336237
- Publication date Nov 17, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Voids in STI Regions for Forming Bulk FinFETs
- Publication number 20160315015
- Publication date Oct 27, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Ming Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A STRAINED REGION
- Publication number 20160247901
- Publication date Aug 25, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Feng Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFETs with Different Fin Height and EPI Height Setting
- Publication number 20160141205
- Publication date May 19, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Li Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A STRAINED STRUCTURE OF A SEMICONDUCTOR DEVICE
- Publication number 20160027897
- Publication date Jan 28, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A STRAINED STRUCTURE AND STRUCTURE FORMED
- Publication number 20150380554
- Publication date Dec 31, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin LEE
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Semiconductor device and method

Method for fabricating a strained structure and structure formed

Strained channel field effect transistor

Strain enhancement for FinFETs

Semiconductor device package and method of manufacturing the same

Transistor with a negative capacitance and a method of creating the...

Method for fabricating a strained structure and structure formed

Transistor with a negative capacitance and a method of creating the...

Fin structure of fin field effect transistor

Strain enhancement for FinFETs

Method for fabricating a strained structure and structure formed

Transistor with a negative capacitance and a method of creating the...

Method for fabricating a strained structure and structure formed

Method of forming a fin field effect transistor comprising two etch...

Strain enhancement for FinFETs

FinFET having isolation structure and method of forming the same

Semiconductor device having a strained region

STI shape near fin bottom of Si fin in bulk FinFET

Strained channel field effect transistor

FinFETs with different fin height and EPI height setting

FinFETs with different fin heights

FinFET having isolation structure and method of forming the same

Voids in STI regions for forming bulk FinFETs

Method of making a strained structure of a semiconductor device

Method for fabricating a strained structure and structure formed

Fin structure of fin field effect transistor

FinFETs with different fin heights

Strain enhancement for FinFETs

Gate structure for semiconductor device

Voids in STI regions for forming bulk FinFETs

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD

METHOD FOR FABRICATING A STRAINED STRUCTURE AND STRUCTURE FORMED

WAVELENGTH TUNING IN SILICON PHOTONICS

OPTICAL MODULATOR AND METHOD OF FORMING THE SAME

SEMICONDUCTOR DEVICE AND METHOD

SEMICONDUCTOR DEVICE AND METHOD

SEMICONDUCTOR DEVICE AND METHOD

Strained Channel Field Effect Transistor

TRANSISTOR WITH A NEGATIVE CAPACITANCE AND A METHOD OF CREATING THE...

Method for Fabricating a Strained Structure and Structure Formed

SEMICONDUCTOR DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME

Strain Enhancement for FinFETs

Method for Fabricating a Strained Structure and Structure Formed

TRANSISTOR WITH A NEGATIVE CAPACITANCE AND A METHOD OF CREATING THE...

TRANSISTOR WITH A NEGATIVE CAPACITANCE AND A METHOD OF CREATING THE...

TRANSISTOR WITH A NEGATIVE CAPACITANCE AND A METHOD OF CREATING THE...

Method for Fabricating a Strained Structure and Structure Formed

FIN STRUCTURE OF FIN FIELD EFFECT TRANSISTOR

Strain Enhancement for FinFETs

Strained Channel Field Effect Transistor

FinFET Having Isolation Structure and Method of Forming the Same

Method for Fabricating a Strained Structure and Structure Formed

FIN STRUCTURE OF FIN FIELD EFFECT TRANSISTOR

FinFETs with Different Fin Heights

Strain Enhancement for FinFETs

Voids in STI Regions for Forming Bulk FinFETs

SEMICONDUCTOR DEVICE HAVING A STRAINED REGION

FinFETs with Different Fin Height and EPI Height Setting

METHOD OF MAKING A STRAINED STRUCTURE OF A SEMICONDUCTOR DEVICE

METHOD FOR FABRICATING A STRAINED STRUCTURE AND STRUCTURE FORMED