Fumitake Mieno

Person

Kawasaki, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method for fabricating a semiconductor device including a step for...
- Patent number 6,300,217
- Issue date Oct 9, 2001
- Fujitsu Limited
- Masaki Kuramae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor device including a step for...
- Patent number 5,843,829
- Issue date Dec 1, 1998
- Fujitsu Limited
- Masaki Kuramae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device manufacturing apparatus and its cleaning method
- Patent number 5,609,721
- Issue date Mar 11, 1997
- Fujitsu Limited
- Atsuhiro Tsukune
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
An integrated semiconductor device having a buried semiconductor la...
- Patent number 5,589,410
- Issue date Dec 31, 1996
- Fujitsu Limited
- Noriaki Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a region doped to a level exceeding the...
- Patent number 5,518,937
- Issue date May 21, 1996
- Fujitsu Limited
- Yuji Furumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated semiconductor device having a buried semiconductor layer...
- Patent number 5,362,981
- Issue date Nov 8, 1994
- Fujitsu Limited
- Noriaki Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming tungsten film
- Patent number 5,298,458
- Issue date Mar 29, 1994
- Fujitsu Limited
- Fumitake Mieno
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing a semiconductor device having a region dope...
- Patent number 5,270,224
- Issue date Dec 14, 1993
- Fujitsu Limited
- Yuji Furumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chemical vapor deposition system
- Patent number 5,264,038
- Issue date Nov 23, 1993
- Fujitsu Limited
- Tatsushi Hara
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Graphite columnar heating body for semiconductor wafer heating
- Patent number 5,233,163
- Issue date Aug 3, 1993
- Fujitsu Limited
- Fumitake Mieno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a region doped to a level exceeding the...
- Patent number 5,111,266
- Issue date May 5, 1992
- Fujitsu Limited
- Yuji Furumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide barrier between silicon substrate and metal layer
- Patent number 5,103,285
- Issue date Apr 7, 1992
- Fujitsu Limited
- Yuji Furumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating an X-ray exposure mask
- Patent number 5,082,695
- Issue date Jan 21, 1992
- 501 Fujitsu Limited
- Masao Yamada
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Vapor deposition method for simultaneously growing an epitaxial sil...
- Patent number 4,966,861
- Issue date Oct 30, 1990
- Fujitsu Limited
- Fumitake Mieno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating bipolar-MOS devices
- Patent number 4,879,255
- Issue date Nov 7, 1989
- Fujitsu Limited
- Tatsuya Deguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a heteroepitaxial semiconductor thin film using a...
- Patent number 4,876,219
- Issue date Oct 24, 1989
- Fujitsu Limited
- Takashi Eshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of growing a single crystalline .beta.-SiC layer on a silico...
- Patent number 4,855,254
- Issue date Aug 8, 1989
- Fujitsu Limited
- Takashi Eshita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Chemical vapor deposition apparatus having an ejecting head for eje...
- Patent number 4,825,809
- Issue date May 2, 1989
- Fujitsu Limited
- Fumitake Mieno
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of selectively depositing tungsten upon a semiconductor subs...
- Patent number 4,804,560
- Issue date Feb 14, 1989
- Fujitsu Limited
- Yoshimi Shioya
- H01 - BASIC ELECTRIC ELEMENTS

Fumitake Mieno

Person

Patents Grantslast 30 patents

Method for fabricating a semiconductor device including a step for...

Method for fabricating a semiconductor device including a step for...

Semiconductor device manufacturing apparatus and its cleaning method

An integrated semiconductor device having a buried semiconductor la...

Semiconductor device having a region doped to a level exceeding the...

Integrated semiconductor device having a buried semiconductor layer...

Method of forming tungsten film

Method of manufacturing a semiconductor device having a region dope...

Chemical vapor deposition system

Graphite columnar heating body for semiconductor wafer heating

Semiconductor device having a region doped to a level exceeding the...

Silicon carbide barrier between silicon substrate and metal layer

Method of fabricating an X-ray exposure mask

Vapor deposition method for simultaneously growing an epitaxial sil...

Method for fabricating bipolar-MOS devices

Method of forming a heteroepitaxial semiconductor thin film using a...

Method of growing a single crystalline .beta.-SiC layer on a silico...

Chemical vapor deposition apparatus having an ejecting head for eje...

Method of selectively depositing tungsten upon a semiconductor subs...