George Jonathan Kluth

Person

Hopewell Juction, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with isolation trench liner
- Patent number 8,716,828
- Issue date May 6, 2014
- Advanced Micro Devices, Inc.
- Richard J. Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with isolation trench liner
- Patent number 8,217,472
- Issue date Jul 10, 2012
- Advanced Micro Devices, Inc.
- Richard J. Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device
- Patent number 8,048,791
- Issue date Nov 1, 2011
- GLOBALFOUNDRIES Inc.
- Michael Hargrove
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with isolation trench liner, and related fabri...
- Patent number 7,998,832
- Issue date Aug 16, 2011
- Advanced Micro Devices, Inc.
- Richard J. Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit having long and short channel metal gate devices...
- Patent number 7,902,599
- Issue date Mar 8, 2011
- Advanced Micro Devices, Inc.
- Richard J. Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit long and short channel metal gate devices and me...
- Patent number 7,723,192
- Issue date May 25, 2010
- Advanced Micro Devices, Inc.
- Richard J. Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of scanning theme implanters and annealers for selective implan...
- Patent number 7,504,326
- Issue date Mar 17, 2009
- Advanced Micro Devices, Inc.
- George Jonathan Kluth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS gates formed by integrating metals having different work funct...
- Patent number 7,176,531
- Issue date Feb 13, 2007
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell structure having nitride layer with reduced charge loss...
- Patent number 6,992,370
- Issue date Jan 31, 2006
- Advanced Micro Devices, Inc.
- George J. Kluth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming polysilicon gate on high-k dielectric and relate...
- Patent number 6,902,977
- Issue date Jun 7, 2005
- Advanced Micro Devices, Inc.
- George J. Kluth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for integrating metals having different work functions to fo...
- Patent number 6,872,613
- Issue date Mar 29, 2005
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-step process for nickel deposition
- Patent number 6,841,449
- Issue date Jan 11, 2005
- Advanced Micro Devices, Inc.
- Jacques J. Bertrand
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device with supersaturated...
- Patent number 6,797,602
- Issue date Sep 28, 2004
- Advanced Micro Devices, Inc.
- George Jonathan Kluth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single anneal for dopant activation and silicide formation
- Patent number 6,777,275
- Issue date Aug 17, 2004
- Advanced Micro Devices, Inc.
- George Jonathan Kluth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Titanium barrier for nickel silicidation of a gate electrode
- Patent number 6,730,587
- Issue date May 4, 2004
- Advanced Micro Devices, Inc.
- Jacques J. Bertrand
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nickel silicide process using non-reactive spacer
- Patent number 6,724,051
- Issue date Apr 20, 2004
- Advanced Micro Devices, Inc.
- Christy Mei-Chu Woo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-step process for nickel deposition
- Patent number 6,689,687
- Issue date Feb 10, 2004
- Advanced Micro Devices, Inc.
- Jacques J. J. Bertrand
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-step process for nickel deposition
- Patent number 6,632,740
- Issue date Oct 14, 2003
- Advanced Micro Devices, Inc.
- Jacques J. Bertrand
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked double sidewall spacer oxide over nitride
- Patent number 6,627,504
- Issue date Sep 30, 2003
- Advanced Micro Devices, Inc.
- Jacques J. Bertrand
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming nickel silicide using a one-step rapid thermal an...
- Patent number 6,605,513
- Issue date Aug 12, 2003
- Advanced Micro Devices, Inc.
- Eric N. Paton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitrogen implant into nitride spacer to reduce nickel silicide form...
- Patent number 6,602,754
- Issue date Aug 5, 2003
- Advanced Micro Devices, Inc.
- George J. Kluth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming fully silicided gates
- Patent number 6,562,718
- Issue date May 13, 2003
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having multiple thickness nickel silicide layers
- Patent number 6,562,717
- Issue date May 13, 2003
- Advanced Micro Devices, Inc.
- Christy Mei-Chu Woo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully nickel silicided metal gate with shallow junction formed
- Patent number 6,555,453
- Issue date Apr 29, 2003
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dopant implantation processing for improved source/drain interface...
- Patent number 6,544,872
- Issue date Apr 8, 2003
- Advanced Micro Devices, Inc.
- Matthew S. Buynoski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cobalt barrier for nickel silicidation of a gate electrode
- Patent number 6,541,866
- Issue date Apr 1, 2003
- Advanced Micro Devices, Inc.
- Jacques J. Bertrand
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deeply doped source/drains for reduction of silicide/silicon interf...
- Patent number 6,521,515
- Issue date Feb 18, 2003
- Advanced Micro Devices, Inc.
- George Jonathan Kluth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual layer silicide formation using a titanium barrier to reduce su...
- Patent number 6,495,460
- Issue date Dec 17, 2002
- Advanced Micro Devices, Inc.
- Jacques Bertrand
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective deposition of amorphous silicon for formation of nickel s...
- Patent number 6,486,062
- Issue date Nov 26, 2002
- Advanced Micro Devices, Inc.
- George J. Kluth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual layer nickel deposition using a cobalt barrier to reduce surfa...
- Patent number 6,468,900
- Issue date Oct 22, 2002
- Advanced Micro Devices, Inc.
- Jacques Bertrand
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE WITH ISOLATION TRENCH LINER
- Publication number 20120223399
- Publication date Sep 6, 2012
- Advanced Micro Devices, Inc.
- Richard J. Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH ISOLATION TRENCH LINER
- Publication number 20110260263
- Publication date Oct 27, 2011
- Advanced Micro Devices, Inc.
- Richard J. Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE SEMICONDUCTOR DEVICES HAVING BURIED GATE CHANNELS AND M...
- Publication number 20100213553
- Publication date Aug 26, 2010
- Advanced Micro Devices, Inc.
- Michael HARGROVE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE SEMICONDUCTOR DEVICES HAVING CAPPING LAYERS AND METHODS...
- Publication number 20100213555
- Publication date Aug 26, 2010
- Advanced Micro Devices, Inc.
- Michael HARGROVE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH ISOLATION TRENCH LINER, AND RELATED FABRI...
- Publication number 20100052094
- Publication date Mar 4, 2010
- Advanced Micro Devices, Inc.
- Richard J. Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT HAVING LONG AND SHORT CHANNEL METAL GATE DEVICES...
- Publication number 20100044782
- Publication date Feb 25, 2010
- Advanced Micro Devices, Inc.
- Richard J. CARTER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT LONG AND SHORT CHANNEL METAL GATE DEVICES AND ME...
- Publication number 20090230463
- Publication date Sep 17, 2009
- Advanced Micro Devices, Inc.
- Richard J. CARTER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Use of Scanning Theme Implanters and Annealers for Selective Implan...
- Publication number 20070281450
- Publication date Dec 6, 2007
- George Jonathan Kluth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR INTEGRATING METALS HAVING DIFFERENT WORK FUNCTIONS TO FO...
- Publication number 20050054149
- Publication date Mar 10, 2005
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING NICKEL SILICIDE USING A ONE-STEP RAPID THERMAL AN...
- Publication number 20020068408
- Publication date Jun 6, 2002
- Advanced Micro Devices, Inc.
- Eric N. Paton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual layer silicide formation using an aluminum barrier to reduce s...
- Publication number 20020068444
- Publication date Jun 6, 2002
- Jacques Bertrand
- H01 - BASIC ELECTRIC ELEMENTS

George Jonathan Kluth

Person

Patents Grantslast 30 patents

Semiconductor device with isolation trench liner

Semiconductor device with isolation trench liner

Method of forming a semiconductor device

Semiconductor device with isolation trench liner, and related fabri...

Integrated circuit having long and short channel metal gate devices...

Integrated circuit long and short channel metal gate devices and me...

Use of scanning theme implanters and annealers for selective implan...

CMOS gates formed by integrating metals having different work funct...

Memory cell structure having nitride layer with reduced charge loss...

Method for forming polysilicon gate on high-k dielectric and relate...

Method for integrating metals having different work functions to fo...

Two-step process for nickel deposition

Method of manufacturing a semiconductor device with supersaturated...

Single anneal for dopant activation and silicide formation

Titanium barrier for nickel silicidation of a gate electrode

Nickel silicide process using non-reactive spacer

Two-step process for nickel deposition

Two-step process for nickel deposition

Stacked double sidewall spacer oxide over nitride

Method of forming nickel silicide using a one-step rapid thermal an...

Nitrogen implant into nitride spacer to reduce nickel silicide form...

Process for forming fully silicided gates

Semiconductor device having multiple thickness nickel silicide layers

Fully nickel silicided metal gate with shallow junction formed

Dopant implantation processing for improved source/drain interface...

Cobalt barrier for nickel silicidation of a gate electrode

Deeply doped source/drains for reduction of silicide/silicon interf...

Dual layer silicide formation using a titanium barrier to reduce su...

Selective deposition of amorphous silicon for formation of nickel s...

Dual layer nickel deposition using a cobalt barrier to reduce surfa...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE WITH ISOLATION TRENCH LINER

SEMICONDUCTOR DEVICE WITH ISOLATION TRENCH LINER

METAL OXIDE SEMICONDUCTOR DEVICES HAVING BURIED GATE CHANNELS AND M...

METAL OXIDE SEMICONDUCTOR DEVICES HAVING CAPPING LAYERS AND METHODS...

SEMICONDUCTOR DEVICE WITH ISOLATION TRENCH LINER, AND RELATED FABRI...

INTEGRATED CIRCUIT HAVING LONG AND SHORT CHANNEL METAL GATE DEVICES...

INTEGRATED CIRCUIT LONG AND SHORT CHANNEL METAL GATE DEVICES AND ME...

Use of Scanning Theme Implanters and Annealers for Selective Implan...

METHOD FOR INTEGRATING METALS HAVING DIFFERENT WORK FUNCTIONS TO FO...

METHOD OF FORMING NICKEL SILICIDE USING A ONE-STEP RAPID THERMAL AN...

Dual layer silicide formation using an aluminum barrier to reduce s...