Gerd Strauch

Person

Aachen, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Method of growing nitrogenous semiconductor crystal materials
- Patent number 7,473,316
- Issue date Jan 6, 2009
- Aixtron AG
- Bernd Schottker
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gas-admission element for CVD processes, and device
- Patent number 7,294,207
- Issue date Nov 13, 2007
- Aixtron AG
- Gerd Strauch
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Coating method
- Patent number 7,201,942
- Issue date Apr 10, 2007
- Aixtron AG
- Holger Jurgensen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Reaction chamber with at least one HF feedthrough
- Patent number 7,056,388
- Issue date Jun 6, 2006
- Aixtron AG
- Walter Franken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device and method for depositing one or more layers on a substrate
- Patent number 6,849,241
- Issue date Feb 1, 2005
- Aixtron AG
- Martin Dauelsberg
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for depositing in particular crystalline layers, gas-admissi...
- Patent number 6,786,973
- Issue date Sep 7, 2004
- Aixtron AG
- Gerd Strauch
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
CVD reactor
- Patent number 6,309,465
- Issue date Oct 30, 2001
- Aixtron AG
- Holger Jürgensen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
Device for depositing thin layers with a wireless detection of proc...
- Publication number 20050092246
- Publication date May 5, 2005
- Peter Baumann
- C30 - CRYSTAL GROWTH
Information Patent Application
Gas-admission element for CVD processes, and device
- Publication number 20030177977
- Publication date Sep 25, 2003
- Gerd Strauch
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for depositing in particular crystalline layers, gas-admissi...
- Publication number 20030180460
- Publication date Sep 25, 2003
- Gerd Strauch
- C30 - CRYSTAL GROWTH
Information Patent Application
Reaction chamber with at least one HF feedthrough
- Publication number 20030111015
- Publication date Jun 19, 2003
- Walter Franken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Device and method for depositing one or more layers on a substrate
- Publication number 20030056720
- Publication date Mar 27, 2003
- Martin Dauelsberg
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method and device for depositing at least one precursor, which is i...
- Publication number 20030056728
- Publication date Mar 27, 2003
- Johannes Lindner
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Condensation coating process
- Publication number 20030054099
- Publication date Mar 20, 2003
- Holger Jurgensen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Gerd Strauch

Person

Patents Grantslast 30 patents

Method of growing nitrogenous semiconductor crystal materials

Gas-admission element for CVD processes, and device

Coating method

Reaction chamber with at least one HF feedthrough

Device and method for depositing one or more layers on a substrate

Method for depositing in particular crystalline layers, gas-admissi...

CVD reactor

Patents Applicationslast 30 patents

Device for depositing thin layers with a wireless detection of proc...

Gas-admission element for CVD processes, and device

Method for depositing in particular crystalline layers, gas-admissi...

Reaction chamber with at least one HF feedthrough

Device and method for depositing one or more layers on a substrate

Method and device for depositing at least one precursor, which is i...

Condensation coating process