Gerd ZSCHÄTZSCH

Person

Dresden, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated circuits with resistor structures formed from gate metal...
- Patent number 9,530,770
- Issue date Dec 27, 2016
- GLOBALFOUNDRIES, INC.
- Alexandru Romanescu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Highly conformal extension doping in advanced multi-gate devices
- Patent number 9,368,513
- Issue date Jun 14, 2016
- GLOBALFOUNDRIES Inc.
- Gerd Zschätzsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective FuSi gate formation in gate first CMOS technologies
- Patent number 9,349,734
- Issue date May 24, 2016
- GLOBALFOUNDRIES Inc.
- Peter Javorka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming transistors without spacers and resulting devices
- Patent number 9,324,831
- Issue date Apr 26, 2016
- GLOBALFOUNDRIES Inc.
- Gerd Zschätzsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of making integrated circuits and components thereof
- Patent number 9,257,530
- Issue date Feb 9, 2016
- GLOBALFOUNDRIES, INC.
- Gerd Zschatzsch
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DEVICES WITH FULLY AND PARTIALLY SILICIDED GATE STRUCTURES IN GATE...
- Publication number 20160204217
- Publication date Jul 14, 2016
- GLOBALFOUNDRIES INC.
- Peter Javorka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGHLY CONFORMAL EXTENSION DOPING IN ADVANCED MULTI-GATE DEVICES
- Publication number 20160071886
- Publication date Mar 10, 2016
- Gerd Zschätzsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH A BOWED SUBSTRATE, AND METHODS FOR PRODUCI...
- Publication number 20160064513
- Publication date Mar 3, 2016
- GLOBALFOUNDRIES, Inc.
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE FuSi GATE FORMATION IN GATE FIRST CMOS TECHNOLOGIES
- Publication number 20160064382
- Publication date Mar 3, 2016
- GLOBALFOUNDRIES INC.
- Peter Javorka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF MAKING INTEGRATED CIRCUITS AND COMPONENTS THEREOF
- Publication number 20160064515
- Publication date Mar 3, 2016
- GLOBALFOUNDRIES, Inc.
- Gerd Zschätzsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING TRANSISTORS WITHOUT SPACERS AND RESULTING DEVICES
- Publication number 20160049494
- Publication date Feb 18, 2016
- GLOBALFOUNDRIES INC.
- Gerd ZSCHÄTZSCH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING A VERTICAL CAPACITOR AND RESULTING DEVICE
- Publication number 20160035818
- Publication date Feb 4, 2016
- GLOBALFOUNDRIES INC.
- Jan HOENTSCHEL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS HAVING IMPROVED CONTACTS AND METHODS FOR FABRIC...
- Publication number 20150372100
- Publication date Dec 24, 2015
- GLOBALFOUNDRIES, Inc.
- Gerd Zschätzsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH RESISTOR STRUCTURES FORMED FROM GATE METAL...
- Publication number 20150311272
- Publication date Oct 29, 2015
- GLOBALFOUNDRIES, Inc.
- Alexandru Romanescu
- H01 - BASIC ELECTRIC ELEMENTS

Gerd ZSCHÄTZSCH

Person

Patents Grantslast 30 patents

Integrated circuits with resistor structures formed from gate metal...

Highly conformal extension doping in advanced multi-gate devices

Selective FuSi gate formation in gate first CMOS technologies

Forming transistors without spacers and resulting devices

Methods of making integrated circuits and components thereof

Patents Applicationslast 30 patents

DEVICES WITH FULLY AND PARTIALLY SILICIDED GATE STRUCTURES IN GATE...

HIGHLY CONFORMAL EXTENSION DOPING IN ADVANCED MULTI-GATE DEVICES

INTEGRATED CIRCUITS WITH A BOWED SUBSTRATE, AND METHODS FOR PRODUCI...

SELECTIVE FuSi GATE FORMATION IN GATE FIRST CMOS TECHNOLOGIES

METHODS OF MAKING INTEGRATED CIRCUITS AND COMPONENTS THEREOF

FORMING TRANSISTORS WITHOUT SPACERS AND RESULTING DEVICES

FORMING A VERTICAL CAPACITOR AND RESULTING DEVICE

INTEGRATED CIRCUITS HAVING IMPROVED CONTACTS AND METHODS FOR FABRIC...

INTEGRATED CIRCUITS WITH RESISTOR STRUCTURES FORMED FROM GATE METAL...