Guangyuan Zhao

Person

Torrance, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Enhancement-mode GaN transistor with selective and nonselective etc...
- Patent number 10,622,455
- Issue date Apr 14, 2020
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with back surface isolation
- Patent number 10,600,674
- Issue date Mar 24, 2020
- Efficient Power Conversion Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN transistors with polysilicon layers used for creating additiona...
- Patent number 10,312,260
- Issue date Jun 4, 2019
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with back surface isolation
- Patent number 10,312,131
- Issue date Jun 4, 2019
- Efficient Power Converson Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-step surface passivation structures and methods for fabricati...
- Patent number 10,096,702
- Issue date Oct 9, 2018
- Efficient Power Conversion Corporation
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN transistors with polysilicon layers used for creating additiona...
- Patent number 9,837,438
- Issue date Dec 5, 2017
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with matching threshold voltages and method for...
- Patent number 9,583,480
- Issue date Feb 28, 2017
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN device with reduced output capacitance and process for making same
- Patent number 9,331,191
- Issue date May 3, 2016
- Efficient Power Conversion Corporation
- Stephen L. Colino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN transistors with polysilicon layers for creating additional com...
- Patent number 9,214,461
- Issue date Dec 15, 2015
- Efficient Power Coversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with matching threshold voltages and method for...
- Patent number 9,214,399
- Issue date Dec 15, 2015
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to fabricate self-aligned isolation in gallium nitride devic...
- Patent number 9,214,528
- Issue date Dec 15, 2015
- Efficient Power Conversion Corporation
- Chunhua Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structure in gallium nitride devices and integrated circuits
- Patent number 9,171,911
- Issue date Oct 27, 2015
- Efficient Power Conversion Corporation
- Chunhua Zhou
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICES WITH BACK SURFACE ISOLATION
- Publication number 20190252238
- Publication date Aug 15, 2019
- Efficient Power Conversion Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT-MODE GaN TRANSISTOR WITH SELECTIVE AND NONSELECTIVE ET...
- Publication number 20180366559
- Publication date Dec 20, 2018
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-STEP SURFACE PASSIVATION STRUCTURES AND METHODS FOR FABRICATI...
- Publication number 20170352754
- Publication date Dec 7, 2017
- Efficient Power Conversion Corporation
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN TRANSISTORS WITH POLYSILICON LAYERS USED FOR CREATING ADDITIONA...
- Publication number 20170330898
- Publication date Nov 16, 2017
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH BACK SURFACE ISOLATION
- Publication number 20170162429
- Publication date Jun 8, 2017
- Efficient Power Conversion Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH MATCHING THRESHOLD VOLTAGES AND METHOD FOR...
- Publication number 20160111416
- Publication date Apr 21, 2016
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN TRANSISTORS WITH POLYSILICON LAYERS USED FOR CREATING ADDITIONA...
- Publication number 20160086980
- Publication date Mar 24, 2016
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH MATCHING THRESHOLD VOLTAGES AND METHOD FOR...
- Publication number 20150034962
- Publication date Feb 5, 2015
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN TRANSISTORS WITH POLYSILICON LAYERS FOR CREATING ADDITIONAL COM...
- Publication number 20150028384
- Publication date Jan 29, 2015
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN DEVICE WITH REDUCED OUTPUT CAPACITANCE AND PROCESS FOR MAKING SAME
- Publication number 20150028390
- Publication date Jan 29, 2015
- Efficient Power Conversion Corporation
- Stephen L. Colino
- H01 - BASIC ELECTRIC ELEMENTS

Guangyuan Zhao

Person

Patents Grantslast 30 patents

Enhancement-mode GaN transistor with selective and nonselective etc...

Semiconductor devices with back surface isolation

GaN transistors with polysilicon layers used for creating additiona...

Semiconductor devices with back surface isolation

Multi-step surface passivation structures and methods for fabricati...

GaN transistors with polysilicon layers used for creating additiona...

Integrated circuit with matching threshold voltages and method for...

GaN device with reduced output capacitance and process for making same

GaN transistors with polysilicon layers for creating additional com...

Integrated circuit with matching threshold voltages and method for...

Method to fabricate self-aligned isolation in gallium nitride devic...

Isolation structure in gallium nitride devices and integrated circuits

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICES WITH BACK SURFACE ISOLATION

ENHANCEMENT-MODE GaN TRANSISTOR WITH SELECTIVE AND NONSELECTIVE ET...

MULTI-STEP SURFACE PASSIVATION STRUCTURES AND METHODS FOR FABRICATI...

GaN TRANSISTORS WITH POLYSILICON LAYERS USED FOR CREATING ADDITIONA...

SEMICONDUCTOR DEVICES WITH BACK SURFACE ISOLATION

INTEGRATED CIRCUIT WITH MATCHING THRESHOLD VOLTAGES AND METHOD FOR...

GAN TRANSISTORS WITH POLYSILICON LAYERS USED FOR CREATING ADDITIONA...

INTEGRATED CIRCUIT WITH MATCHING THRESHOLD VOLTAGES AND METHOD FOR...

GaN TRANSISTORS WITH POLYSILICON LAYERS FOR CREATING ADDITIONAL COM...

GaN DEVICE WITH REDUCED OUTPUT CAPACITANCE AND PROCESS FOR MAKING SAME