Guirong Liang

Person

Santa Clara, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Programming techniques to reduce programming stress in a memory device
- Patent number 12,205,647
- Issue date Jan 21, 2025
- SanDisk Technologies LLC
- Xiaoyu Che
- G11 - INFORMATION STORAGE
Information Patent Grant
Pre-read cycle timing shrink by SGD bias control and page and wordl...
- Patent number 12,142,325
- Issue date Nov 12, 2024
- SanDisk Technologies LLC
- Yanjie Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Sub-block status dependent device operation
- Patent number 12,046,289
- Issue date Jul 23, 2024
- SanDisk Technologies LLC
- Han-Ping Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Dynamic sense amplifier supply voltage for power and die size reduc...
- Patent number 11,978,516
- Issue date May 7, 2024
- SANDISK TECHNOLOGIES LLC
- Yanjie Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Utilizing data pattern effect to control read clock timing and bit...
- Patent number 11,887,674
- Issue date Jan 30, 2024
- SanDisk Technologies LLC
- Yanjie Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory with sub-block based self-boosting scheme
- Patent number 11,688,469
- Issue date Jun 27, 2023
- SanDisk Technologies LLC
- Dengtao Zhao
- G11 - INFORMATION STORAGE
Information Patent Grant
Peak current and program time optimization through loop dependent v...
- Patent number 11,636,897
- Issue date Apr 25, 2023
- SanDisk Technologies LLC
- Yanjie Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory programming with selectively skipped verify pulses for perfo...
- Patent number 11,605,437
- Issue date Mar 14, 2023
- SanDisk Technologies LLC
- Yanjie Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Neighbor word line compensation full sequence program scheme
- Patent number 11,139,031
- Issue date Oct 5, 2021
- SanDisk Technologies LLC
- Han-Ping Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
State-dependent read compensation
- Patent number 9,805,809
- Issue date Oct 31, 2017
- SanDisk Technologies LLC
- Zhenming Zhou
- G11 - INFORMATION STORAGE
Information Patent Grant
Systems and methods for sampling data at a non-volatile memory system
- Patent number 9,785,357
- Issue date Oct 10, 2017
- SanDisk Technologies LLC
- Deepak Raghu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Temperature compensation management in solid-state memory
- Patent number 9,672,934
- Issue date Jun 6, 2017
- Western Digital Technologies, Inc.
- Guirong Liang
- G11 - INFORMATION STORAGE
Information Patent Grant
Data storage device having reflow awareness
- Patent number 9,583,206
- Issue date Feb 28, 2017
- SanDisk Technologies LLC
- Ting Luo
- G11 - INFORMATION STORAGE
Information Patent Grant
Partial block erase for data refreshing and open-block programming
- Patent number 9,563,504
- Issue date Feb 7, 2017
- SanDisk Technologies LLC
- Guirong Liang
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile storage reflow detection
- Patent number 9,472,270
- Issue date Oct 18, 2016
- SanDisk Technologies LLC
- Guirong Liang
- G11 - INFORMATION STORAGE
Information Patent Grant
Temperature compensation management in solid-state memory
- Patent number 9,275,741
- Issue date Mar 1, 2016
- Western Digital Technologies, Inc.
- Guirong Liang
- G11 - INFORMATION STORAGE
Information Patent Grant
Internal data load for non-volatile storage
- Patent number 9,053,820
- Issue date Jun 9, 2015
- SanDisk Technologies Inc.
- Wenzhou Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Programming scheme for improved voltage distribution in solid-state...
- Patent number 9,007,841
- Issue date Apr 14, 2015
- Western Digital Technologies, Inc.
- Haibo Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile storage with process that reduces read disturb on end...
- Patent number 8,942,043
- Issue date Jan 27, 2015
- SanDisk Technologies Inc.
- Jiahui Yuan
- G11 - INFORMATION STORAGE
Information Patent Grant
Internal data load for non-volatile storage
- Patent number 8,861,269
- Issue date Oct 14, 2014
- SanDisk Technologies Inc.
- Wenzhou Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Selected word line dependent programming voltage
- Patent number 8,804,425
- Issue date Aug 12, 2014
- SanDisk Technologies Inc.
- Wenzhou Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Ramping pass voltage to enhance channel boost in memory device
- Patent number 8,644,075
- Issue date Feb 4, 2014
- SanDisk Technologies Inc.
- Gerrit Jan Hemink
- G11 - INFORMATION STORAGE
Information Patent Grant
Substrate bias during program of non-volatile storage
- Patent number 8,638,606
- Issue date Jan 28, 2014
- SanDisk Technologies Inc.
- Dengtao Zhao
- G11 - INFORMATION STORAGE
Information Patent Grant
Ramping pass voltage to enhance channel boost in memory device, wit...
- Patent number 8,526,233
- Issue date Sep 3, 2013
- SanDisk Technologies Inc.
- Gerrit Jan Hemink
- G11 - INFORMATION STORAGE
Information Patent Grant
Erase and programming techniques to reduce the widening of state di...
- Patent number 8,416,624
- Issue date Apr 9, 2013
- SanDisk Technologies, Inc
- Bo Lei
- G11 - INFORMATION STORAGE
Information Patent Grant
Using channel-to-channel coupling to compensate floating gate-to-fl...
- Patent number 8,395,936
- Issue date Mar 12, 2013
- SanDisk Technologies Inc.
- Haibo Li
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
HYBRID ERASE FOR DATA RETENTION THRESHOLD VOLTAGE MARGIN IMPROVEMENT
- Publication number 20240386973
- Publication date Nov 21, 2024
- Western Digital Technologies, Inc.
- Xiaoyu Che
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMING ERASE STATE AS LAST PROGRAM STATE DURING A PROGRAMMING...
- Publication number 20240290390
- Publication date Aug 29, 2024
- Western Digital Technologies, Inc.
- Yanjie Wang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SUB-BLOCK STATUS DEPENDENT DEVICE OPERATION
- Publication number 20240087650
- Publication date Mar 14, 2024
- SANDISK TECHNOLOGIES LLC
- Han-Ping Chen
- G11 - INFORMATION STORAGE
Information Patent Application
PRECHARGE SCHEME DURING PROGRAMMING OF A MEMORY DEVICE
- Publication number 20240079062
- Publication date Mar 7, 2024
- SANDISK TECHNOLOGIES LLC
- Jiacen Guo
- G11 - INFORMATION STORAGE
Information Patent Application
PRE-READ CYCLE TIMING SHRINK BY SGD BIAS CONTROL AND PAGE AND WORDL...
- Publication number 20230368844
- Publication date Nov 16, 2023
- SANDISK TECHNOLOGIES LLC
- Yanjie Wang
- G11 - INFORMATION STORAGE
Information Patent Application
DYNAMIC SENSE AMPLIFIER SUPPLY VOLTAGE FOR POWER AND DIE SIZE REDUC...
- Publication number 20230326531
- Publication date Oct 12, 2023
- SANDISK TECHNOLOGIES LLC
- Yanjie Wang
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMING TECHNIQUES TO REDUCE PROGRAMMING STRESS IN A MEMORY DEVICE
- Publication number 20230317170
- Publication date Oct 5, 2023
- SANDISK TECHNOLOGIES LLC
- Xiaoyu Che
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UTILIZING DATA PATTERN EFFECT TO CONTROL READ CLOCK TIMING AND BIT...
- Publication number 20230317174
- Publication date Oct 5, 2023
- SANDISK TECHNOLOGIES LLC
- Yanjie Wang
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH SUB-BLOCK BASED SELF-BOOSTING SCHEME
- Publication number 20230050955
- Publication date Feb 16, 2023
- SANDISK TECHNOLOGIES LLC
- Dengtao Zhao
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY PROGRAMMING WITH SELECTIVELY SKIPPED VERIFY PULSES FOR PERFO...
- Publication number 20220415417
- Publication date Dec 29, 2022
- SANDISK TECHNOLOGIES LLC
- Yanjie Wang
- G11 - INFORMATION STORAGE
Information Patent Application
PEAK CURRENT AND PROGRAM TIME OPTIMIZATION THROUGH LOOP DEPENDENT V...
- Publication number 20220284964
- Publication date Sep 8, 2022
- SANDISK TECHNOLOGIES LLC
- Yanjie Wang
- G11 - INFORMATION STORAGE
Information Patent Application
Systems and Methods for Sampling Data at a Non-Volatile Memory System
- Publication number 20170109040
- Publication date Apr 20, 2017
- SANDISK TECHNOLOGIES INC.
- Deepak Raghu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
TEMPERATURE COMPENSATION MANAGEMENT IN SOLID-STATE MEMORY
- Publication number 20160172051
- Publication date Jun 16, 2016
- WESTERN DIGITAL TECHNOLOGIES, INC.
- GUIRONG LIANG
- G11 - INFORMATION STORAGE
Information Patent Application
PARTIAL BLOCK ERASE FOR DATA REFRESHING AND OPEN-BLOCK PROGRAMMING
- Publication number 20160163393
- Publication date Jun 9, 2016
- SANDISK TECHNOLOGIES INC.
- Guirong Liang
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE STORAGE REFLOW DETECTION
- Publication number 20160118112
- Publication date Apr 28, 2016
- SANDISK TECHNOLGOIES INC.
- Guirong Liang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
DATA STORAGE DEVICE HAVING REFLOW AWARENESS
- Publication number 20160099078
- Publication date Apr 7, 2016
- SanDisk Technologies Inc.
- TING LUO
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMING SCHEME FOR IMPROVED VOLTAGE DISTRIBUTION IN SOLID-STATE...
- Publication number 20150117113
- Publication date Apr 30, 2015
- WESTERN DIGITAL TECHNOLOGIES, INC.
- HAIBO LI
- G11 - INFORMATION STORAGE
Information Patent Application
INTERNAL DATA LOAD FOR NON-VOLATILE STORAGE
- Publication number 20140347925
- Publication date Nov 27, 2014
- Wenzhou Chen
- G11 - INFORMATION STORAGE
Information Patent Application
INTERNAL DATA LOAD FOR NON-VOLATILE STORAGE
- Publication number 20140254262
- Publication date Sep 11, 2014
- SANDISK TECHNOLOGIES INC.
- Wenzhou Chen
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE STORAGE WITH PROCESS THAT REDUCES READ DISTURB ON END...
- Publication number 20140247663
- Publication date Sep 4, 2014
- SANDISK TECHNOLOGIES INC.
- Jiahui Yuan
- G11 - INFORMATION STORAGE
Information Patent Application
Ramping Pass Voltage To Enhance Channel Boost In Memory Device
- Publication number 20130314987
- Publication date Nov 28, 2013
- SANDISK TECHNOLOGIES INC.
- Gerrit Jan Hemink
- G11 - INFORMATION STORAGE
Information Patent Application
SELECTED WORD LINE DEPENDENT PROGRAMMING VOLTAGE
- Publication number 20130250688
- Publication date Sep 26, 2013
- Wenzhou Chen
- G11 - INFORMATION STORAGE
Information Patent Application
SUBSTRATE BIAS DURING PROGRAM OF NON-VOLATILE STORAGE
- Publication number 20130070531
- Publication date Mar 21, 2013
- Dengtao Zhao
- G11 - INFORMATION STORAGE
Information Patent Application
Ramping Pass Voltage To Enhance Channel Boost In Memory Device, Wit...
- Publication number 20120300550
- Publication date Nov 29, 2012
- Gerrit Jan Hemink
- G11 - INFORMATION STORAGE
Information Patent Application
Using Channel-To-Channel Coupling To Compensate Floating Gate-To-Fl...
- Publication number 20120287716
- Publication date Nov 15, 2012
- Haibo Li
- G11 - INFORMATION STORAGE
Information Patent Application
Erase and Programming Techniques to Reduce the Widening of State Di...
- Publication number 20110286279
- Publication date Nov 24, 2011
- Bo Lei
- G11 - INFORMATION STORAGE

Guirong Liang

Person

Patents Grantslast 30 patents

Programming techniques to reduce programming stress in a memory device

Pre-read cycle timing shrink by SGD bias control and page and wordl...

Sub-block status dependent device operation

Dynamic sense amplifier supply voltage for power and die size reduc...

Utilizing data pattern effect to control read clock timing and bit...

Non-volatile memory with sub-block based self-boosting scheme

Peak current and program time optimization through loop dependent v...

Memory programming with selectively skipped verify pulses for perfo...

Neighbor word line compensation full sequence program scheme

State-dependent read compensation

Systems and methods for sampling data at a non-volatile memory system

Temperature compensation management in solid-state memory

Data storage device having reflow awareness

Partial block erase for data refreshing and open-block programming

Nonvolatile storage reflow detection

Temperature compensation management in solid-state memory

Internal data load for non-volatile storage

Programming scheme for improved voltage distribution in solid-state...

Non-volatile storage with process that reduces read disturb on end...

Internal data load for non-volatile storage

Selected word line dependent programming voltage

Ramping pass voltage to enhance channel boost in memory device

Substrate bias during program of non-volatile storage

Ramping pass voltage to enhance channel boost in memory device, wit...

Erase and programming techniques to reduce the widening of state di...

Using channel-to-channel coupling to compensate floating gate-to-fl...

Patents Applicationslast 30 patents

HYBRID ERASE FOR DATA RETENTION THRESHOLD VOLTAGE MARGIN IMPROVEMENT

PROGRAMMING ERASE STATE AS LAST PROGRAM STATE DURING A PROGRAMMING...

SUB-BLOCK STATUS DEPENDENT DEVICE OPERATION

PRECHARGE SCHEME DURING PROGRAMMING OF A MEMORY DEVICE

PRE-READ CYCLE TIMING SHRINK BY SGD BIAS CONTROL AND PAGE AND WORDL...

DYNAMIC SENSE AMPLIFIER SUPPLY VOLTAGE FOR POWER AND DIE SIZE REDUC...

PROGRAMMING TECHNIQUES TO REDUCE PROGRAMMING STRESS IN A MEMORY DEVICE

UTILIZING DATA PATTERN EFFECT TO CONTROL READ CLOCK TIMING AND BIT...

NON-VOLATILE MEMORY WITH SUB-BLOCK BASED SELF-BOOSTING SCHEME

MEMORY PROGRAMMING WITH SELECTIVELY SKIPPED VERIFY PULSES FOR PERFO...

PEAK CURRENT AND PROGRAM TIME OPTIMIZATION THROUGH LOOP DEPENDENT V...

Systems and Methods for Sampling Data at a Non-Volatile Memory System

TEMPERATURE COMPENSATION MANAGEMENT IN SOLID-STATE MEMORY

PARTIAL BLOCK ERASE FOR DATA REFRESHING AND OPEN-BLOCK PROGRAMMING

NONVOLATILE STORAGE REFLOW DETECTION

DATA STORAGE DEVICE HAVING REFLOW AWARENESS

PROGRAMMING SCHEME FOR IMPROVED VOLTAGE DISTRIBUTION IN SOLID-STATE...

INTERNAL DATA LOAD FOR NON-VOLATILE STORAGE

INTERNAL DATA LOAD FOR NON-VOLATILE STORAGE

NON-VOLATILE STORAGE WITH PROCESS THAT REDUCES READ DISTURB ON END...

Ramping Pass Voltage To Enhance Channel Boost In Memory Device

SELECTED WORD LINE DEPENDENT PROGRAMMING VOLTAGE

SUBSTRATE BIAS DURING PROGRAM OF NON-VOLATILE STORAGE

Ramping Pass Voltage To Enhance Channel Boost In Memory Device, Wit...

Using Channel-To-Channel Coupling To Compensate Floating Gate-To-Fl...

Erase and Programming Techniques to Reduce the Widening of State Di...