Hanming Wu

Person

Beijing, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Preparation method for accurate pattern of integrated circuit
- Patent number 11,699,594
- Issue date Jul 11, 2023
- Etownip Microelectronics (Beijing) Co., LTD.
- Hanming Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
TSV interconnect structure and manufacturing method thereof
- Patent number 10,515,892
- Issue date Dec 24, 2019
- Semiconductor Manufacturing International (Shanghai) Corporation
- Weihai Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, related manufacturing method, and related ele...
- Patent number 10,128,117
- Issue date Nov 13, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- Wenbo Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, related manufacturing method, and related ele...
- Patent number 9,799,525
- Issue date Oct 24, 2017
- SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORP.
- Wenbo Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-type field effect transistor and manufacturing method thereof
- Patent number 9,590,031
- Issue date Mar 7, 2017
- Semiconductor Manufacturing International (Shanghai) Corporation
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating quasi-SOI source/drain field effect transist...
- Patent number 9,349,588
- Issue date May 24, 2016
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for dual energy implantation for ultra-shallow junction form...
- Patent number 9,024,281
- Issue date May 5, 2015
- Semiconductor Manufacturing International (Shanghai) Corporation
- Hanming Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS devices and fabrication method
- Patent number 8,901,675
- Issue date Dec 2, 2014
- Semiconductor Manufacturing International Corp
- Weihai Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon germanium and polysilicon gate structure for strained silic...
- Patent number 8,551,831
- Issue date Oct 8, 2013
- Semiconductor Manufacturing International (Shanghai) Corporation
- Da Wei Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for dual energy implantation for ultra-shallow junction form...
- Patent number 8,466,050
- Issue date Jun 18, 2013
- Semiconductor Manufacturing International (Shanghai) Corporation
- Hanming Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure using a pure silicon dioxide hardmask for gate...
- Patent number 8,106,423
- Issue date Jan 31, 2012
- Semiconductor Manufacturing International (Shanghai) Corporation
- Hanming Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal hard mask method and structure for strained silicon MOS trans...
- Patent number 7,709,336
- Issue date May 4, 2010
- Semiconductor Manufacturing International (Shanghai) Corporation
- Xian J. Ning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for second spacer formation for strained silic...
- Patent number 7,591,659
- Issue date Sep 22, 2009
- Semiconductor Manufacturing International (Shanghai) Corporation
- John Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etching method and structure using a hard mask for strained silicon...
- Patent number 7,557,000
- Issue date Jul 7, 2009
- Semiconductor Manufacturing International (Shanghai) Corporation
- John Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure using a pure silicon dioxide hardmask for gate...
- Patent number 7,425,488
- Issue date Sep 16, 2008
- Semiconductor Manufacturing International (Shanghai)
- Hanming Wu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PREPARATION METHOD FOR ACCURATE PATTERN OF INTEGRATED CIRCUIT
- Publication number 20220051903
- Publication date Feb 17, 2022
- Etownip Microelectronics (Beijing) Co.,LTD.
- Hanming WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, RELATED MANUFACTURING METHOD, AND RELATED ELE...
- Publication number 20180012765
- Publication date Jan 11, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- Wenbo WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A QUASI-SOI SOURCE-DRAIN MULTI-GATE DEVICE
- Publication number 20160247726
- Publication date Aug 25, 2016
- PERKING UNIVERSITY
- Ru HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, RELATED MANUFACTURING METHOD, AND RELATED ELE...
- Publication number 20160240670
- Publication date Aug 18, 2016
- Semiconductor Manufacturing International (Shanghai) Corporation
- Wenbo WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING QUASI-SOI SOURCE/DRAIN FIELD EFFECT TRANSIST...
- Publication number 20160118245
- Publication date Apr 28, 2016
- Peking University
- Ru Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-TYPE FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF
- Publication number 20150279933
- Publication date Oct 1, 2015
- Semiconductor Manufacturing International (Shanghai) Corporation
- Deyuan XIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TSV INTERCONNECT STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20140374916
- Publication date Dec 25, 2014
- Semiconductor Manufacturing International (Shanghai) Corporation
- WEIHAI BU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS DEVICES AND FABRICATION METHOD
- Publication number 20140015064
- Publication date Jan 16, 2014
- SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORP.
- WEIHAI BU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DUAL ENERGY IMPLANTATION FOR ULTRA-SHALLOW JUNCTION FORM...
- Publication number 20130264491
- Publication date Oct 10, 2013
- Hanming Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DUAL ENERGY IMPLANTATION FOR ULTRA-SHALLOW JUNCTION FORM...
- Publication number 20110143512
- Publication date Jun 16, 2011
- Semiconductor Manufacturing International (Shanghai) Corporation
- HANMING WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Germanium and Polysilicon Gate Structure for Strained Silic...
- Publication number 20090152599
- Publication date Jun 18, 2009
- Semiconductor Manufacturing International (Shanghai) Corporation
- Da Wei Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and structure using a pure silicon dioxide hardmask for gate...
- Publication number 20090065805
- Publication date Mar 12, 2009
- Semiconductor Manufacturing International (Shanghai) Corporation
- Hanming Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCHING METHOD AND STRUCTURE IN A SILICON RECESS FOR SUBSEQUENT EPI...
- Publication number 20080173941
- Publication date Jul 24, 2008
- Semiconductor Manufacturing International (Shanghai) Corporation
- Bei Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCHING METHOD AND STRUCTURE USING A HARD MASK FOR STRAINED SILICON...
- Publication number 20080119032
- Publication date May 22, 2008
- Semiconductor Manufacturing International (Shanghai) Corporation
- John Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PULSED PLASMA ETCHING METHOD AND APPARATUS
- Publication number 20080081483
- Publication date Apr 3, 2008
- Semiconductor Manufacturing International (Shanghai) Corporation
- Hanming Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
In-situ doped silicon germanium and silicon carbide source drain re...
- Publication number 20070196992
- Publication date Aug 23, 2007
- Semiconductor Manufacturing Int'l (Shanghai) Corporation
- Mo Hong Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and structure for second spacer formation for strained silic...
- Publication number 20070077716
- Publication date Apr 5, 2007
- Semiconductor Manufacturing International (Shanghai) Corporation
- John Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and structure using a pure silicon dioxide hardmask for gate...
- Publication number 20070063221
- Publication date Mar 22, 2007
- Semiconductor Manufacturing Int'l (Shanghai) Corporation
- Hanming Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal hard mask method and structure for strained silicon MOS trans...
- Publication number 20060194395
- Publication date Aug 31, 2006
- Semiconductor Manufacturing International (Shanghai) Corporation
- Xian J. Ning
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Preparation method for accurate pattern of integrated circuit

TSV interconnect structure and manufacturing method thereof

Semiconductor device, related manufacturing method, and related ele...

Semiconductor device, related manufacturing method, and related ele...

Fin-type field effect transistor and manufacturing method thereof

Method for fabricating quasi-SOI source/drain field effect transist...

Method for dual energy implantation for ultra-shallow junction form...

CMOS devices and fabrication method

Silicon germanium and polysilicon gate structure for strained silic...

Method for dual energy implantation for ultra-shallow junction form...

Method and structure using a pure silicon dioxide hardmask for gate...

Metal hard mask method and structure for strained silicon MOS trans...

Method and structure for second spacer formation for strained silic...

Etching method and structure using a hard mask for strained silicon...

Method and structure using a pure silicon dioxide hardmask for gate...

Patents Applicationslast 30 patents

PREPARATION METHOD FOR ACCURATE PATTERN OF INTEGRATED CIRCUIT

SEMICONDUCTOR DEVICE, RELATED MANUFACTURING METHOD, AND RELATED ELE...

METHOD FOR FABRICATING A QUASI-SOI SOURCE-DRAIN MULTI-GATE DEVICE

SEMICONDUCTOR DEVICE, RELATED MANUFACTURING METHOD, AND RELATED ELE...

METHOD FOR FABRICATING QUASI-SOI SOURCE/DRAIN FIELD EFFECT TRANSIST...

FIN-TYPE FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF

TSV INTERCONNECT STRUCTURE AND MANUFACTURING METHOD THEREOF

CMOS DEVICES AND FABRICATION METHOD

METHOD FOR DUAL ENERGY IMPLANTATION FOR ULTRA-SHALLOW JUNCTION FORM...

METHOD FOR DUAL ENERGY IMPLANTATION FOR ULTRA-SHALLOW JUNCTION FORM...

Silicon Germanium and Polysilicon Gate Structure for Strained Silic...

Method and structure using a pure silicon dioxide hardmask for gate...

ETCHING METHOD AND STRUCTURE IN A SILICON RECESS FOR SUBSEQUENT EPI...

ETCHING METHOD AND STRUCTURE USING A HARD MASK FOR STRAINED SILICON...

PULSED PLASMA ETCHING METHOD AND APPARATUS

In-situ doped silicon germanium and silicon carbide source drain re...

Method and structure for second spacer formation for strained silic...

Method and structure using a pure silicon dioxide hardmask for gate...

Metal hard mask method and structure for strained silicon MOS trans...